JP2015185560A - semiconductor light-emitting module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting module capable of radiating heat generated at the lighting of a semiconductor light-emitting device with efficiency and of suppressing temperature rise caused by self-heating of the semiconductor light-emitting device.SOLUTION: A semiconductor light-emitting device 2 is bonded on a first substrate 10 of a stem 50 configured by bonding the first substrate 10 on front end surfaces of a plurality of lead pins 31 and 32 and bonding a second substrate 20 at an intermediate position. The stem 50 bonded with the semiconductor light-emitting device 2 is accommodated in a sealing space 62 of a valve 60, and the lead pins 31 and 32 are led out from the sealing space 62 to the exterior. The first substrate 10 has a plurality of flat through holes filled with a member having high conductive conductivity and thermal conductivity therein. Respective upper surfaces of the plurality of flat through holes and a plurality of electrode patterns 3a and 3b of the semiconductor light-emitting device 2, and the respective lower surfaces of the plurality of flat through holes and the respective front end surfaces of the plurality of lead pins 31 and 31 are bonded by solder.

Description

  The present invention relates to a semiconductor light emitting module, and more particularly to a semiconductor light emitting module in which a semiconductor light emitting device as a light source is accommodated in a sealed space.

  Conventionally, as this type of semiconductor light emitting module, for example, there is one disclosed in Patent Document 1 as a “light emitting diode”.

  In the disclosed light emitting diode 80, as shown in FIG. 11 (schematic cross-sectional view), a first conductor pattern 82 and a second conductor pattern 83 are formed on a substrate 81, and the first conductor pattern 82 is an LED chip. 84 is die-bonded so that the lower electrode (not shown) of the LED chip 84 and the first conductor pattern 82 are electrically connected, and the first lead terminal 86 inserted into the through hole 85 of the substrate 81 is provided. It is connected to the tip 86a.

  The second conductor pattern 83 has one end bonded to the upper electrode (not shown) of the LED chip 84 and the other end of the bonding wire 87 bonded to the upper electrode of the LED chip 84 and the second conductor pattern. 83 is electrically connected via a bonding wire 87 and is connected to the tip 89 a of the second lead terminal 89 inserted through the through hole 88 of the substrate 81.

  The substrate 81, the LED chip 84, the upper end of the first lead terminal 86, and the upper end of the second lead terminal 89 are accommodated in an airtight space 92 formed by the airtight container 90 and the sealing portion 91. The lower end 86b of the first lead terminal 86 and the lower end 89b of the second lead terminal 89 penetrate the sealing portion 91 in an airtight manner and are led out to the outside.

JP 2005-108936 A

  By the way, in the light emitting diode 80 having the above-described configuration, a part of the heat generated when the LED chip 84 is lit (during light emission) is a part of the first conductor pattern 82 and the first lead terminal 86 in which the LED chip 84 is die-bonded. Is conducted to the outside and part is conducted to the outside through the substrate 81 on which the LED chip 84 is mounted, the first lead terminal 86 and the second lead terminal 89, and part is airtight. The light is diffused into the space 92 and transmitted to the first lead terminal 86 and the second lead terminal 89, and is conducted to the outside through the first lead terminal 86 and the second lead terminal 89.

  In that case, since the first conductor pattern 82 is formed with a thickness of about 35 μm, the sectional area is small, the thermal resistance value is large, and the thermal conductivity is not good. The substrate 81 is also formed of a material having a low thermal conductivity such as ceramic or glass. Further, the portions of the first lead terminal 86 and the second lead terminal 89 located in the airtight space 92 have a relatively small heat receiving area with respect to heat generated continuously when the LED chip 84 is turned on, It is difficult to dissipate the heat trapped in the airtight space 92 to the outside using only the first lead terminal 86 and the second lead terminal 89.

  In addition, there is a concern that the LED chip may deteriorate due to the heat of the burner during the fusion sealing of the sealing portion 91 by the burner heating.

  Therefore, the present invention has been made in view of the above problems, and the object of the present invention is to efficiently dissipate the heat generated when the LED chip (semiconductor light-emitting device) is turned on and to self-heat the semiconductor light-emitting device. An object of the present invention is to provide a semiconductor light emitting module capable of suppressing a temperature rise.

  In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention is a plurality of lead pins formed of a metal member and extending in parallel with each other, and one end surface of each of the plurality of lead pins. A stem having a first substrate disposed and bonded thereon, and a second substrate positioned at a predetermined distance from the first substrate and having the plurality of lead pins penetrated and bonded thereto And a semiconductor light-emitting device bonded to the first substrate of the stem and a translucent member, and the cylindrical opening having a bottomed opening is sealed by a sealing portion. A bulb having a seating space formed therein, the stem to which the semiconductor light emitting device is joined is accommodated in the sealing space of the bulb, and the plurality of lead pins are sealed from the sealing space. It is led out to the outside through the part In the conductor light emitting module, the first substrate has a plurality of flat through holes filled with members having high conductivity and thermal conductivity, and each upper surface of each of the plurality of flat through holes Each of the plurality of electrode patterns of the semiconductor light emitting device, the lower surface of each of the plurality of flat through holes, and the tip end surface of each of the plurality of lead pins are solder-bonded.

  According to a second aspect of the present invention, in the first aspect, the second substrate has a plurality of conductive patterns, and each of the plurality of conductive patterns and each of the plurality of lead pins are soldered. It is characterized by being joined.

  According to a third aspect of the present invention, in the first or second aspect, the sealing portion is provided between the opening of the valve and the second substrate. It is characterized by.

  According to a fourth aspect of the present invention, in any one of the first to third aspects, each of the plurality of lead pins has a radially outer side of the lead pin at two positions, a tip portion and an intermediate portion. A flange portion extending annularly toward the front end, the flange portion positioned at the tip portion is soldered to the first substrate, and the flange portion positioned at the intermediate portion is soldered to the second substrate. It is characterized by being.

  The invention described in claim 5 of the present invention is characterized in that, in any one of claims 1 to 4, the sealing portion is formed of an epoxy-based or silicone-based resin. Is.

  The semiconductor light emitting module of the present invention is formed by bonding the first substrate on one end face of each of the plurality of lead pins and bonding the second substrate at a position away from the first substrate by a predetermined distance. A stem is formed, and the stem having the semiconductor light emitting device bonded on the first substrate is accommodated in the sealing space of the bulb sealed by the sealing portion, and the lead pin penetrates the sealing portion from the sealing space. And derived to the outside.

  In this case, the first substrate has a plurality of flat through holes in which members having high conductivity and high thermal conductivity are filled, and each of the top surfaces of the plurality of flat through holes and the plurality of semiconductor light emitting devices. Each of the electrode patterns, the lower surfaces of the plurality of flat through holes, and the tip surfaces of the lead pins were soldered.

  As a result, the heat generated when the semiconductor light emitting device is turned on is dissipated through the heat transfer path by the filled portion of the flat through hole of the first substrate and the lead pin including the solder joint portion. Therefore, the heat transfer path does not have a portion having a high thermal resistance such as a resin or a conductor pattern having a small cross-sectional area, and an excellent heat dissipation effect can be obtained.

It is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. Similarly, it is explanatory drawing of the manufacturing method of the semiconductor light-emitting module of embodiment. It is explanatory drawing of the heat-transfer path | route of the semiconductor light-emitting module of embodiment. It is explanatory drawing of a prior art example.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 10 (the same parts are denoted by the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  1-9 is a figure explaining the manufacturing method of the semiconductor light-emitting module of embodiment. Hereinafter, an example of a method for manufacturing a semiconductor light emitting module will be described in the order of steps with reference to the explanatory diagrams of FIGS.

  First (see FIG. 1 (cross-sectional view of the first substrate)), a first substrate 10 on which a semiconductor light emitting device 2 to be described later is mounted. The first substrate 10 is a base substrate made of, for example, a glass epoxy substrate. A pair of external connections of the semiconductor light emitting device 2 is performed using an epoxy resin copper clad laminate (FR-4) in which copper foil is laminated on both sides of 11 and etching the copper foil on one side (front surface). A pair of semiconductor light-emitting device mounting pads 12a and 12b that are electrically and mechanically connected to each of the electrodes are formed, and the copper foil on the other surface (back surface) is etched to be described later. A pair of lead pin bonding pads 13a and 13b are formed for electrical and mechanical connection between the tip portions of the pair of lead pins 31 and 31, respectively.

  The semiconductor light emitting device mounting pad 12a and the lead pin bonding pad 13a, and the semiconductor light emitting device mounting pad 12b and the lead pin bonding pad 13b are electrically connected through the through holes 14 and 15, respectively. Each through-hole is filled with a filler to form filling portions 14a and 15a, thereby providing a flat through-hole structure. As the filler forming the filling portions 14a and 15a, for example, a member having high conductivity and thermal conductivity such as a conductive resin paste is used.

  Next (see FIG. 2 (front view of the lead pins)), a pair of lead pins 31 and 32 for joining and fixing and supporting the first substrate 10 are produced. The lead pins 31 and 32 are made of a metal member, and each of the lead pins 31 and 32 has columnar portions 31a and 32a extending long like a thin cylindrical column, and the columnar portions 31a and 32a are provided at one end of the columnar portions 31a and 32a. The first flange portion 31b, 32b that extends annularly outward in the radial direction of the first flange portion, and at a position away from the first flange portion 31b, 32b by a predetermined distance from the other end side. Similar to 31b and 32b, second flange portions 31c and 32c extending annularly toward the radially outer side of the columnar portion are provided. The upper end surfaces 31ba and 32ba of the first flange portions 31b and 32b have flat surfaces.

  Next (see FIG. 3 (cross-sectional view of the second substrate)), the second substrate 20 is fabricated in which the pair of lead pins 31 and 32 is inserted and fixed to the lead pins 31 and 32. The second substrate 20 is provided on the first substrate 10 using, for example, an epoxy resin copper clad laminate (FR-4) in which a copper foil is laminated on one side of a base substrate 21 made of a glass epoxy substrate. A pair of lead pin insertion holes 22 and 23 through which the lead pins 31 and 32 are inserted at the same interval as the through holes 14 and 15 are provided.

  Around the lead pin insertion holes 22 and 23, lead pin bonding pads 24a and 24b are formed so as to surround the periphery of the lead pin insertion holes 22 and 23 by etching the copper foil.

  Next (see FIG. 4 (cross-sectional view of bonding between the first substrate and the lead pin)), the lead pin bonding pad 13a of the first substrate 10 and the lower portion 14aa of the filling portion 14a of the through hole 14 are connected to the first of the lead pins 31. The upper end portion 31bb of the flange portion 31b is joined by the solder 40. Similarly, the lead pin joining pad 13b of the first substrate 10 and the lower portion 15aa of the filling portion 15a of the through hole 15 are connected to the first flange portion 32b of the lead pin 32. The upper end portion 32bb is joined with the solder 40.

  Next (see FIG. 5 (bonding cross-sectional view of the second substrate and the lead pin)), the lead pins 31 and 32 are inserted into the lead pin insertion holes 22 and 23 of the second substrate 20, respectively, and a lead pin bonding pad is inserted. 24 a and the second flange portion 31 c of the lead pin 31, and the lead pin joining pad 24 b and the second flange portion 32 c of the lead pin 32 are joined by the solder 40.

  Then, as shown in FIG. 6 (front view of the stem), a stem 50 is formed in which the first substrate 10 and the second substrate 20 are bonded and fixed to the lead pins 31 and 32 via the solder 40.

  Next (see FIG. 7 (a cross-sectional view of the junction between the first substrate constituting the stem and the semiconductor light emitting device)), the semiconductor light emitting device 2 is mounted on the first substrate 10 constituting the stem 50. The semiconductor light emitting device 2 has a pair of electrodes, each of which is mounted with a semiconductor light emitting element 4 on one surface of a substrate 3 and sealed with a translucent member 5 and connected to each of a pair of element electrodes (anode electrode and cathode electrode). The patterns 3a and 3b extend from the semiconductor light emitting device mounting surface to the opposite surface through the opposite side surfaces.

  Therefore, the semiconductor light emitting device 2 is mounted on the first substrate 10, and one electrode pattern 3 a of the semiconductor light emitting device 2 is placed on the semiconductor light emitting device mounting pad 12 a of the first substrate 10 and the filling portion 14 a of the through hole 14. Similarly, the other electrode pattern 3b of the semiconductor light emitting device 2 is soldered to the semiconductor light emitting device mounting pad 12b of the first substrate 10 and the upper portion 15ab of the through hole 15 filling portion 15a. 40 to join.

  Finally (see FIG. 8 (fixing diagram of stem with respect to the valve)), a cylindrical valve 60 having a bottomed opening made of glass or resin having translucency is set on a fixing jig with the opening 61 facing upward. The stem 50 on which the semiconductor light emitting device 2 is mounted is inserted from the semiconductor light emitting device 2 side to a predetermined position in the bulb 60, and the lead pins 31 and 32 are clamped and held as they are.

  Then, in a state where the stem 50 is held at a predetermined position of the valve 60, the sealing material 65 is injected into the valve 60 from the opening 61 of the valve 60 to form the sealing portion 66. The sealing material 65 is made of an epoxy-based or silicone-based resin, and is blocked by the second substrate 20 of the stem 50 to stop the inflow from the second substrate 20.

  Accordingly, as shown in FIG. 9 (a perspective view of the semiconductor light emitting module), the stem 50 in which the semiconductor light emitting device 2 is mounted in the sealing space 62 of the bulb 60 in which the opening 61 is sealed by the sealing portion 66. Is completed, and the pair of lead pins 31 and 32 of the stem 50 are led out of the bulb 60 through the sealing portion 66 from the sealing space 62, and the semiconductor light emitting module 1 is completed.

  Therefore (see FIG. 10 (explanation diagram of the heat transfer path)), when a predetermined voltage is applied between the pair of lead pins 31 and 32 led out of the valve 60 from an external power source, each of the lead pins 31 and 32 is electrically connected. A voltage is applied between the connected lead pin bonding pads 13 a and 13 b of the first substrate 10, and through holes 14 and 15, semiconductor light emitting device mounting pads 12 a and 12 b, and a pair of electrode patterns of the semiconductor light emitting device 2. The light is applied to the element electrode of the semiconductor light emitting element 4 through 3a and 3b, and the semiconductor light emitting element 4 emits light, and the emitted light (L) of the semiconductor light emitting element 4 is emitted from the semiconductor light emitting device 2. The light emitted from the semiconductor light emitting device 2 passes through the light-transmitting bulb 60 and is emitted out of the semiconductor light emitting module 1.

  At this time, the semiconductor light emitting element 4 generates heat simultaneously with light emission. Heat generation (H) at this time is conducted from the semiconductor light emitting element 4 to the substrate 3 on which the semiconductor light emitting element 4 is mounted, and the filling portions 14a and 15a of the through holes 14 and 15 of the first substrate 10 from the substrate 3 and The lead 40 is conducted to the lead pins 31 and 32 through the solder 40 and is diffused to the outside through the lead-out portion from the bulb 60 of the lead pins 31 and 32.

  In other words, the heat generated when the semiconductor light emitting device 2 is turned on passes through a heat transfer path including the filling portions 14a and 15a of the through holes 14 and 15 of the first substrate 10 and the lead pins 31 and 32 including two solder joint portions. After that, heat is dissipated. Therefore, the heat transfer path does not have a portion with high thermal resistance such as a resin or a conductor pattern having a small cross-sectional area, and an excellent heat dissipation effect can be obtained.

  Further, the heat (H) from the semiconductor light emitting device 2 is also transferred from the lead pins 31 and 32 to the second substrate 20 soldered to the lead pins 31 and 32, and is in contact with the second substrate 20. It is dissipated outside through 66.

  As described above, the semiconductor light emitting module 1 is configured to have excellent heat dissipation, so that the temperature rise due to self-heating during the light emission of the semiconductor light emitting element 4 can be satisfactorily suppressed. As a result, a decrease in the amount of emitted light due to a decrease in the light emission efficiency of the semiconductor light emitting element 4 due to the temperature increase of the semiconductor light emitting element 4 can be suppressed, and similarly the deterioration of the semiconductor light emitting element 4 due to the temperature increase of the semiconductor light emitting element 4 It is possible to suppress the shortening of the device life due to the above.

  The semiconductor light emitting module 1 does not have a high-temperature heating process using a burner or the like during the manufacturing process. Therefore, there is no concern that the semiconductor light emitting element is thermally deteriorated during manufacturing, and high reliability can be ensured.

  In addition, since the manufacturing method of the semiconductor light emitting module 1 mentioned above showed an example of the manufacturing method, it is not necessarily restricted to the said manufacturing process. It is preferable to set appropriately considering productivity and the like.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor light-emitting module 2 ... Semiconductor light-emitting device 3 ... Board | substrate 3a ... Electrode pattern 3b ... Electrode pattern 4 ... Semiconductor light-emitting element 5 ... Translucent member 10 ... 1st board | substrate 11 ... Base substrate 12a ... Pad for semiconductor light-emitting device mounting 12b ... Semiconductor light emitting device mounting pad 13a ... Lead pin joining pad 13b ... Lead pin joining pad 14 ... Through hole 14a ... Filling part 14aa ... Lower part 14ab ... Upper part 15 ... Through hole 15a ... Filling part 15aa ... Lower part 15ab ... Upper part 20 ... Second substrate 21 ... Base substrate 22 ... Lead pin insertion hole 23 ... Lead pin insertion hole 24a ... Lead pin bonding pad 24b ... Lead pin bonding pad 31 ... Lead pin 31a ... Columnar portion 31b ... First flange portion 31ba ... Upper end surface 31bb ... Upper end 31c ... 2 flange portions 32 ... lead pin 32a ... columnar portion 32b ... first flange portion 32ba ... upper end surface 32bb ... upper end portion 32c ... second flange portion 40 ... solder 50 ... stem 60 ... valve 61 ... opening 62 ... sealing Space 65 ... Sealing material 66 ... Sealing part

Claims (5)

A plurality of lead pins formed of metal members and extending in parallel to each other;
A first substrate disposed on and bonded to one end surface of each of the plurality of lead pins;
A stem that is located at a predetermined distance from the first substrate and has a second substrate through which the plurality of lead pins are joined;
A semiconductor light emitting device bonded onto the first substrate of the stem;
A valve formed with a light-transmitting member and having a sealing space formed by sealing the cylindrical opening with a bottomed opening with a sealing portion;
The stem to which the semiconductor light emitting device is bonded is accommodated in the sealing space of the bulb, and the plurality of lead pins penetrate the sealing portion from the sealing space and are led out to the outside. A semiconductor light emitting module,
The first substrate has a plurality of flat through-holes filled with members having high conductivity and thermal conductivity, and has an upper surface of each of the plurality of flat through-holes and a plurality of the semiconductor light-emitting devices. A semiconductor light emitting module, wherein each of the electrode patterns, the lower surfaces of the plurality of flat through holes, and the tip surfaces of the lead pins are soldered.   2. The semiconductor light emitting module according to claim 1, wherein the second substrate has a plurality of conductive patterns, and each of the plurality of conductive patterns is soldered to each of the plurality of lead pins.   The semiconductor light emitting module according to claim 1, wherein the sealing portion is provided between an opening of the bulb and the second substrate.   Each of the plurality of lead pins has a flange portion extending annularly toward the radially outer side of the lead pin at two locations, a tip portion and an intermediate portion, and the flange portion located at the tip portion is connected to the first substrate. 4. The semiconductor light emitting module according to claim 1, wherein a flange portion that is soldered and located at the intermediate portion is soldered to the second substrate. 5.   The semiconductor light-emitting module according to claim 1, wherein the sealing portion is formed of an epoxy-based or silicone-based resin.

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