JP5227693B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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JP5227693B2
JP5227693B2 JP2008207097A JP2008207097A JP5227693B2 JP 5227693 B2 JP5227693 B2 JP 5227693B2 JP 2008207097 A JP2008207097 A JP 2008207097A JP 2008207097 A JP2008207097 A JP 2008207097A JP 5227693 B2 JP5227693 B2 JP 5227693B2
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semiconductor light
light emitting
pattern
emitting device
insulating substrate
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JP2010045105A (en
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亮介 近藤
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Description

本発明は、半導体発光装置に関するものであり、詳しくは、直列に接続された複数の半導体発光素子を光源とする半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device using a plurality of semiconductor light emitting elements connected in series as a light source.

上面に一対の電極を設けた複数の半導体発光素子を１つのパッケージ内に配置し、それら半導体発光素子による直列接続回路を構成する場合、引用文献１のように、隣接する半導体発光素子５０の極性の異なる電極同士を順次ボンディングワイヤ５１を介して接続し、半導体発光素子５０間の接続に寄与しないで残った一対の極性の異なる電極の夫々をパッケージ５２に設けられたリード５３にボンディングワイヤ５４を介して接続する方法がある（図１２参照）。
特開２００７−１０３９４０号公報 When a plurality of semiconductor light emitting elements each having a pair of electrodes on the upper surface are arranged in one package and a series connection circuit is configured by these semiconductor light emitting elements, the polarity of adjacent semiconductor light emitting elements 50 as in Reference 1 is used. The electrodes having different polarities are sequentially connected via the bonding wire 51, and the bonding wires 54 are connected to the leads 53 provided in the package 52 for the remaining pairs of electrodes having different polarities without contributing to the connection between the semiconductor light emitting elements 50. There is a method of connecting through the network (see FIG. 12).
JP 2007-103940 A

ところで、特許文献１に引用されたような、半導体発光素子同士の電極をボンディングワイヤを介して直接接続する方法は、パッケージに設けるリードフレームのリードが外部からの給電用の２本のみでよく、リードで占有される部分が少ないためにパッケージの小型化が可能となる。   By the way, the method of directly connecting the electrodes of the semiconductor light emitting elements, as cited in Patent Document 1, through the bonding wires, requires only two lead frames for power supply from the outside provided in the package, Since the portion occupied by the leads is small, the package can be downsized.

しかし、半導体発光素子の電極のいずれかにボンディングワイヤの１ｓｔボンドによるボールボンド部が形成され、いずれかに２ｎｄボンドによるステッチボンド部が形成される。そのうち、ステッチボンド部は電極に対するボンディングワイヤの接合力がボールボンド部に比べて極めて弱く、外部応力に対する信頼性が低いものとなってしまう。   However, a ball bond portion by a 1st bond of a bonding wire is formed on one of the electrodes of the semiconductor light emitting element, and a stitch bond portion by a 2nd bond is formed on either of them. Among them, the bonding force of the bonding wire to the electrode is extremely weak compared to the ball bond portion, and the reliability to external stress is low.

また、ステッチボンド用の電極はボールボンド用の電極よりも面積を大きくする必要があり、そのため半導体発光素子の光出射面に対するステッチボンド用電極の面積比が大きくなるため光取り出し効率が低下する。   In addition, the area for the stitch bond electrode needs to be larger than that for the ball bond electrode, so that the area ratio of the stitch bond electrode to the light emitting surface of the semiconductor light emitting device is increased, so that the light extraction efficiency is lowered.

そこで、本発明は上記問題に鑑みて創案なされたもので、その目的とするところは、上面にのみ電極を設けた複数の半導体発光素子を１つのパッケージ内に配置し、それら半導体発光素子による直列接続回路を構成する半導体発光装置において、半導体発光素子の電極に対するボンディングワイヤの接合強度を高めることにより外部応力に対する信頼性を向上させ、且つ電極面積の拡大を抑制することにより良好な光取り出し効率を確保することを可能にすることにある。   Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to arrange a plurality of semiconductor light emitting elements having electrodes only on the upper surface in one package, and to connect the semiconductor light emitting elements in series. In the semiconductor light emitting device constituting the connection circuit, the reliability of external stress is improved by increasing the bonding strength of the bonding wire to the electrode of the semiconductor light emitting element, and the light extraction efficiency is improved by suppressing the expansion of the electrode area. It is to make it possible to secure.

上記課題を解決するために、本発明の請求項１に記載された発明は、
第１の貫通孔を有する第１の絶縁基板と、
前記第１の絶縁基板の下面に前記第１の貫通孔を塞ぐように配設された金属底板と、
前記第１の貫通孔内の前記金属底板上に配置された複数の半導体発光素子とを備え、
前記複数の半導体発光素子が直列接続されてなる半導体発光装置であって、
前記複数の半導体発光素子は、上面に対となる両電極を有し、
前記第一の絶縁基板上に形成され、前記半導体発光素子の電極とボンディングワイヤを介して電気的に接続されて外部からの給電を受ける一対の給電パターンと、
前記第一の絶縁基板上に前記給電パターと分離して形成され、前記複数の半導体発光素子のうち２つの半導体発光素子の互いに極性の異なる電極とボンディングワイヤを介して電気的に接続された中継パターンを有し、
前記一対の給電パターンおよび中継パターンは、前記第一の絶縁基板の上面にて前記第一の貫通孔を囲んで形成され、ボンディングワイヤで接続された部分から当該第一の絶縁基板の側面側の端部まで当該基板の上面に延設して形成されており、前記複数の半導体発光素子の両電極とボンディングワイヤがボールボンド部を介して接合されていることを特徴とするものである。 In order to solve the above problems, the invention described in claim 1 of the present invention is:
A first insulating substrate having a first through hole;
A metal bottom plate disposed on the lower surface of the first insulating substrate so as to close the first through hole;
A plurality of semiconductor light emitting elements disposed on the metal bottom plate in the first through-hole,
A semiconductor light emitting device in which the plurality of semiconductor light emitting elements are connected in series,
The plurality of semiconductor light emitting devices have both electrodes paired on the upper surface,
A pair of power supply patterns formed on the first insulating substrate, electrically connected to the electrodes of the semiconductor light emitting element via bonding wires and receiving power from the outside;
A relay formed on the first insulating substrate separately from the power supply pattern and electrically connected to electrodes of two semiconductor light emitting elements having different polarities from each other through bonding wires. Has a pattern,
The pair of power supply patterns and relay patterns are formed on the upper surface of the first insulating substrate so as to surround the first through hole, and are connected to the side of the first insulating substrate from a portion connected by a bonding wire. It is formed so as to extend to the upper surface of the substrate to the end , and both electrodes of the plurality of semiconductor light emitting elements and bonding wires are bonded via ball bond portions.

また、本発明の請求項２に記載された発明は、請求項１において、
前記給電パターンは前記第１の絶縁基板の側面を経由して底面まで延設されていることを特徴とするものである。 In addition, the invention described in claim 2 of the present invention is as follows.
The feeding pattern is characterized in that it is extended to the bottom surface via the side surface of the first insulating substrate.

また、本発明の請求項３に記載された発明は、請求項１または２のいずれかにおいて、
前記ボンディングワイヤが前記給電パターンに結線されたステッチボンド部が、前記ボールボンド部より高い位置に形成されることを特徴とするものである。 Moreover, the invention described in claim 3 of the present invention is any one of claims 1 and 2,
A stitch bond portion where the bonding wire is connected to the power supply pattern is formed at a position higher than the ball bond portion.

また、本発明の請求項４に記載された発明は、請求項１乃至３のいずれかにおいて、
前記第１の絶縁基板上面に絶縁性接着層を介して貼り合わされた、前記第１の貫通孔よりも大きい第２の貫通孔を有する第２の絶縁基板を備えることを特徴とするものである。 Further, the invention described in claim 4 of the present invention is any one of claims 1 to 3,
A second insulating substrate having a second through hole larger than the first through hole, which is bonded to the upper surface of the first insulating substrate via an insulating adhesive layer, is provided. .

本発明は、上面に対となる電極を設けた複数の半導体発光素子を１つのパッケージ内に配置し、それら半導体発光素子による直列接続回路を構成する半導体発光装置であって、半導体発光素子の電極とボンディングワイヤを１ｓｔワイヤボンディングによるボールボンド部を介して接合するようにした。   The present invention is a semiconductor light-emitting device in which a plurality of semiconductor light-emitting elements each provided with a pair of electrodes on the upper surface are arranged in one package, and constitutes a series connection circuit using these semiconductor light-emitting elements. And the bonding wire are bonded through a ball bond portion by 1st wire bonding.

そのため、半導体発光素子の電極に対するボンディングワイヤの接合強度が高められて外部応力に対する信頼性が向上し、且つ電極面積の拡大が抑制されたことにより良好な光取り出し効率を確保することを可能になった。   Therefore, the bonding strength of the bonding wire to the electrode of the semiconductor light emitting element is increased, the reliability with respect to external stress is improved, and the expansion of the electrode area is suppressed, so that it is possible to ensure good light extraction efficiency. It was.

以下、この発明の好適な実施形態を図１から図１１を参照しながら、詳細に説明する（同一部分については同じ符号を付す）。尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの実施形態に限られるものではない。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 11 (the same reference numerals are used for the same portions). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

本発明は、複数の半導体発光素子を発光源とする半導体発光装置であり、図１はその内部結線図、図２は上面図、図３は図２のＡ−Ａ断面図、図４は図２の部分拡大図である。   The present invention is a semiconductor light emitting device using a plurality of semiconductor light emitting elements as light sources. FIG. 1 is an internal connection diagram, FIG. 2 is a top view, FIG. 3 is a cross-sectional view taken along line AA in FIG. FIG.

半導体発光装置は図１のように、発光源となる３個の半導体発光素子Ｌ１、Ｌ２、Ｌ３が直列に配置されている。半導体発光素子Ｌ１、Ｌ２、Ｌ３はいずれも上面に対となる両電極が設けられている。但し、半導体発光素子は必ずしも３個に限られるものではなく、半導体発光装置に求められる明るさ、消費電力、大きさ等の要件に基づいて決定され、複数個の半導体発光素子を配置し且つそれらを直列に内部結線するような半導体発光装置であれば本発明に係る優れた効果を得ることができる。   As shown in FIG. 1, the semiconductor light-emitting device has three semiconductor light-emitting elements L1, L2, and L3 that are light sources arranged in series. The semiconductor light emitting elements L1, L2, and L3 are all provided with a pair of electrodes on the upper surface. However, the number of semiconductor light-emitting elements is not necessarily limited to three, and is determined based on requirements such as brightness, power consumption, and size required for the semiconductor light-emitting device, and a plurality of semiconductor light-emitting elements are arranged and those As long as the semiconductor light emitting device is configured such that the internal connection is made in series, the excellent effect of the present invention can be obtained.

図２及び図３より、半導体発光装置１は、第１の貫通孔２を有する下部基板３と第２の貫通孔４を有する上部基板５が絶縁性接着層６を介して貼り合わされ、下部基板３の上部基板５と反対側（下面側）に例えば銅箔等の金属箔からなる金属底板７が配設されている。   2 and 3, the semiconductor light emitting device 1 includes a lower substrate 3 having a first through-hole 2 and an upper substrate 5 having a second through-hole 4 bonded together through an insulating adhesive layer 6. 3, a metal bottom plate 7 made of a metal foil such as a copper foil is disposed on the side opposite to the upper substrate 5 (lower surface side).

上部基板５と下部基板３はいずれも絶縁性部材からなり、上部基板５の第２の貫通孔４は下部基板３の第１の貫通孔２よりも大きく形成され、第１の貫通孔２と第２の貫通孔４により金属底板７を底面とする凹部８が形成されている。   Both the upper substrate 5 and the lower substrate 3 are made of an insulating member, and the second through hole 4 of the upper substrate 5 is formed larger than the first through hole 2 of the lower substrate 3. The second through hole 4 forms a recess 8 having the metal bottom plate 7 as a bottom surface.

下部基板３の上部基板５側（上面側）及び側面側には導体パターンが形成されており、夫々独立した一対の給電パターン９、給電パターン９と独立した中継パターン１０、及び給電パターン９、中継パターン１０と独立した反射パターン１１の一部が凹部８内に露出している。そのうち各給電パターン９は凹部８内から下部基板３の上面を経て、側面側を経て、底面側まで延設されている。下部基板３の側面および底面に配設された給電パターンは、給電端子として機能する。各中継パターン１０は凹部８内から下部基板３の上面を前記給電パターン９が延設されていない側面側の端部まで延設され、反射パターン１１は凹部８内に露出した下部基板上面の給電パターン９及び中継パターン１０以外の領域を占めており、中継パターン１０と同様に凹部８内から前記給電パターン９が延設されていない互いに対向する側面側端部まで延設されている。さらに、図示はしていないが、上部基板５の第２の貫通孔４および下部基板３の第１の貫通孔２の内周面には、給電パターン９と絶縁して設けられた反射面が形成されている。   Conductor patterns are formed on the upper substrate 5 side (upper surface side) and the side surface side of the lower substrate 3, and a pair of independent power feeding patterns 9, a relay pattern 10 independent of the power feeding pattern 9, a power feeding pattern 9, and a relay A part of the reflection pattern 11 independent of the pattern 10 is exposed in the recess 8. Among them, each power feeding pattern 9 extends from the inside of the recess 8 through the upper surface of the lower substrate 3 to the bottom surface side through the side surface side. The power supply pattern disposed on the side surface and the bottom surface of the lower substrate 3 functions as a power supply terminal. Each relay pattern 10 extends from the inside of the recess 8 to the upper surface of the lower substrate 3 to the end on the side surface where the power supply pattern 9 is not extended, and the reflection pattern 11 feeds the power of the upper surface of the lower substrate exposed in the recess 8. It occupies an area other than the pattern 9 and the relay pattern 10, and extends from the inside of the recess 8 to the opposite side end portions where the power feeding pattern 9 is not extended. Further, although not shown in the drawings, the inner peripheral surfaces of the second through hole 4 of the upper substrate 5 and the first through hole 2 of the lower substrate 3 are provided with reflection surfaces that are insulated from the power feeding pattern 9. Is formed.

凹部８の金属底板７上には、夫々光出射面側（上部側）に極性が異なる２つの電極を設けた３個の半導体発光素子Ｌ１、Ｌ２、Ｌ３が配設され、各半導体発光素子Ｌ１、Ｌ２、Ｌ３の夫々の電極と凹部８内に露出した給電パターン９及び中継パターン１０がボンディングワイヤ１２を介して電気的に接続されている。   On the metal bottom plate 7 of the recess 8, there are disposed three semiconductor light emitting elements L1, L2, L3 each having two electrodes of different polarities on the light emitting surface side (upper side), and each semiconductor light emitting element L1. , L2 and L3 are electrically connected to the feeding pattern 9 and the relay pattern 10 exposed in the recess 8 through bonding wires 12.

具体的には図４に示すように、ボールボンディング法により半導体発光素子Ｌ２のアノード電極ａと給電パターン９ａがボンディングワイヤ１２ａを介して接合され、半導体発光素子Ｌ２のカソード電極ｃ及び半導体発光素子Ｌ１のアノード電極ａが夫々ボンディングワイヤ１２ｂ、１２ｃを介して中継パターン１０ａに接合され、半導体発光素子Ｌ１のカソード電極ｃ及び半導体発光素子Ｌ３のアノード電極ａが夫々ボンディングワイヤ１２ｄ、１２ｅを介して中継パターン１０ｂに接合され、半導体発光素子Ｌ３のカソード電極ｃがボンディングワイヤ１２ｆを介して給電パターン９ｂに接合されている。   Specifically, as shown in FIG. 4, the anode electrode a of the semiconductor light emitting element L2 and the power supply pattern 9a are joined via a bonding wire 12a by a ball bonding method, and the cathode electrode c and the semiconductor light emitting element L1 of the semiconductor light emitting element L2 are joined. Are bonded to the relay pattern 10a via bonding wires 12b and 12c, respectively, and the cathode electrode c of the semiconductor light emitting element L1 and the anode electrode a of the semiconductor light emitting element L3 are connected to the relay pattern 10b via bonding wires 12d and 12e, respectively. The cathode electrode c of the semiconductor light emitting element L3 is bonded to the power supply pattern 9b via the bonding wire 12f.

これにより、半導体発光素子Ｌ１、Ｌ２、Ｌ３による直列接続の内部結線が施されている。この場合、各ボンディングワイヤ１２をワイヤボンディングするにあたって、ボンディングワイヤ１２ａは半導体発光素子Ｌ２のアノード電極ａに１ｓｔボンディングが行われ、給電パターン９ａに２ｎｄボンディングが行われている。ボールボンディング法によれば、先端をトーチにより溶融してＡｕボールの形成されたボンディングワイヤは、半導体発光素子の電極上に超音波等を用いて圧着接続し、給電パターンあるいは中継パターンに導いて圧着接続する。このとき、半導体発光素子上の電極上にボールボンド部が形成され、給電パターンあるいは中継パターン上にステッチボンド部が形成される。その結果、半導体発光素子Ｌ２のアノード電極ａにボールボンド部１３を介してボンディングワイヤ１２ａの一方の端部が接合され、給電パターン９ａにステッチボンド部１４を介してボンディングワイヤ１２ａの他方の端部が接合されている。   Thereby, the internal connection of the serial connection by the semiconductor light emitting elements L1, L2, and L3 is performed. In this case, when the bonding wires 12 are wire-bonded, the bonding wire 12a is subjected to 1st bonding to the anode electrode a of the semiconductor light emitting element L2 and 2nd bonding to the power supply pattern 9a. According to the ball bonding method, a bonding wire in which an Au ball is formed by melting the tip with a torch is crimped and connected to an electrode of a semiconductor light emitting element using ultrasonic waves or the like, and is guided to a power feeding pattern or a relay pattern to be crimped. Connecting. At this time, a ball bond portion is formed on the electrode on the semiconductor light emitting element, and a stitch bond portion is formed on the power feeding pattern or the relay pattern. As a result, one end of the bonding wire 12a is bonded to the anode electrode a of the semiconductor light emitting element L2 via the ball bond portion 13, and the other end of the bonding wire 12a is connected to the power supply pattern 9a via the stitch bond portion 14. Are joined.

以下同様に、ボンディングワイヤ１２ｂは、一方の端部が半導体発光素子Ｌ２のカソード電極ｃに１ｓｔボンディングによるボールボンド部１３を介して接合され、他方の端部が中継パターン１０ａに２ｎｄボンディングによるステッチボンド部１４を介して接合されている。ボンディングワイヤ１２ｃは、一方の端部が半導体発光素子Ｌ１のアノード電極ａに１ｓｔボンディングによるボールボンド部１３を介して接合され、他方の端部が中継パターン１０ａに２ｎｄボンディングによるステッチボンド部１４を介して接合されている。ボンディングワイヤ１２ｄは、一方の端部が半導体発光素子Ｌ１のカソード電極ｃに１ｓｔボンディングによるボールボンド部１３を介して接合され、他方の端部が中継パターン１０ｂに２ｎｄボンディングによるステッチボンド部１４を介して接合されている。ボンディングワイヤ１２ｅは、一方の端部が半導体発光素子Ｌ３のアノード電極ａに１ｓｔボンディングによるボールボンド部１３を介して接合され、他方の端部が中継パターン１０ｂに２ｎｄボンディングによるステッチボンド部１４を介して接合されている。ボンディングワイヤ１２ｆは、一方の端部が半導体発光素子Ｌ３のカソード電極ｃに１ｓｔボンディングによるボールボンド部１３を介して接合され、他方の端部が給電パターン９ｂに２ｎｄボンディングによるステッチボンド部１４を介して接合されている。   Similarly, one end of the bonding wire 12b is bonded to the cathode electrode c of the semiconductor light emitting element L2 via the ball bonding portion 13 by 1st bonding, and the other end is stitch bonded to the relay pattern 10a by 2nd bonding. It is joined via the part 14. One end of the bonding wire 12c is bonded to the anode electrode a of the semiconductor light emitting element L1 via the ball bond portion 13 by 1st bonding, and the other end is connected to the relay pattern 10a via the stitch bond portion 14 by 2nd bonding. Are joined. One end of the bonding wire 12d is bonded to the cathode electrode c of the semiconductor light emitting element L1 via the ball bond portion 13 by 1st bonding, and the other end is connected to the relay pattern 10b via the stitch bond portion 14 by 2nd bonding. Are joined. One end of the bonding wire 12e is bonded to the anode electrode a of the semiconductor light emitting element L3 via the ball bond portion 13 by 1st bonding, and the other end is bonded to the relay pattern 10b via the stitch bond portion 14 by 2nd bonding. Are joined. One end of the bonding wire 12f is bonded to the cathode electrode c of the semiconductor light emitting element L3 via the ball bond portion 13 by 1st bonding, and the other end is connected to the power supply pattern 9b via the stitch bond portion 14 by 2nd bonding. Are joined.

このように、半導体発光素子Ｌ１、Ｌ２、Ｌ３の各電極とボンディングワイヤ１２はいずれもボールボンド部１３を介して接合され、各給電パターン９及び各中継パターン１０とボンディングワイヤ１２はいずれもステッチボンド部１４を介して接合されている。   In this way, each electrode of the semiconductor light emitting elements L1, L2, and L3 and the bonding wire 12 are joined via the ball bond portion 13, and each of the power supply pattern 9, each relay pattern 10 and the bonding wire 12 are stitch bonded. It is joined via the part 14.

そのため、半導体発光素子の各電極とボンディングワイヤを接合するボールボンド部の接合強度が、ステッチボンド部を介して接合される場合に比べて極めて高くなり、高い接合信頼性を確保することができる。   Therefore, the bonding strength of the ball bond portion for bonding each electrode of the semiconductor light emitting element and the bonding wire is extremely higher than that in the case of bonding via the stitch bond portion, and high bonding reliability can be ensured.

なお、ボンディングワイヤのステッチボンド部を介する接合は、基板上の導体パターンに対するよりも半導体発光素子の電極に対する方が強度が弱い。そこで、本発明のように半導体発光素子の電極側にボールボンド部を形成し、基板上の導体パターン側にステッチボンド部を形成することにより、ボンディングワイヤによる半導体発光素子の電極と基板上の導体パターンとの電気的な接続をより確実なものとすることができる。   It should be noted that the bonding via the stitch bond portion of the bonding wire is weaker with respect to the electrode of the semiconductor light emitting element than with respect to the conductor pattern on the substrate. Therefore, as in the present invention, a ball bond part is formed on the electrode side of the semiconductor light emitting element, and a stitch bond part is formed on the conductor pattern side on the substrate, whereby the electrode of the semiconductor light emitting element by the bonding wire and the conductor on the substrate are formed. The electrical connection with the pattern can be made more reliable.

このように、中継パターンは２つの半導体発光素子の互いに極性の異なる電極同士を電気的に接続するための中継点としてのみ機能し、外部との電気的な繋がりをもたない。つまり、中継点としての働きをもたせるのみのために形成されたものである。そして、中継パターンを設けたことにより半導体発光素子の全ての電極側にボールボンド部を形成することが可能となり、半導体発光素子が直列に接続された内部結線を電気的に信頼性の高いものとすることができるようになる。   Thus, the relay pattern functions only as a relay point for electrically connecting the electrodes of the two semiconductor light emitting elements having different polarities, and has no electrical connection with the outside. In other words, it is formed only to serve as a relay point. By providing the relay pattern, it becomes possible to form ball bond portions on all the electrode sides of the semiconductor light emitting element, and the internal connection in which the semiconductor light emitting elements are connected in series is electrically reliable. Will be able to.

なお、中継パターンは上述のような機能を果たすものであればよく、導体パターンを形成したサブマウントを下部基板上に取り付けることによっても形成することができる。   The relay pattern may be any pattern as long as it fulfills the above-described function, and can also be formed by attaching a submount on which a conductor pattern is formed on the lower substrate.

また、半導体発光素子の全ての電極側にボールボンド部を形成することが可能となったことにより、半導体発光素子の光出射面に対する電極の面積比をステッチボンド部を形成する場合よりも小さくすることができる。そのため、半導体発光素子の光出射面の面積を大きく確保することが可能となり光取り出し効率の向上を図ることができる。   In addition, since it becomes possible to form ball bond portions on all the electrode sides of the semiconductor light emitting device, the area ratio of the electrodes to the light emitting surface of the semiconductor light emitting device is made smaller than when the stitch bond portions are formed. be able to. For this reason, it is possible to ensure a large area of the light emitting surface of the semiconductor light emitting device, and to improve the light extraction efficiency.

凹部内には半導体発光素子及びボンディングワイヤを覆うように封止樹脂が充填され、半導体発光素子を水分、塵埃及びガス等の外部環境から保護し、且つボンディングワイヤを振動及び衝撃等の機械的応力から保護している。また、封止樹脂は半導体発光素子の光出射面とで界面を形成しており、半導体発光素子の発光光を半導体発光素子の光出射面から封止樹脂内に効率良く出射させる機能も有している。   The recess is filled with a sealing resin so as to cover the semiconductor light emitting element and the bonding wire, protect the semiconductor light emitting element from the external environment such as moisture, dust and gas, and mechanical stress such as vibration and impact. Protect from. In addition, the sealing resin forms an interface with the light emitting surface of the semiconductor light emitting element, and also has a function of efficiently emitting light emitted from the semiconductor light emitting element from the light emitting surface of the semiconductor light emitting element into the sealing resin. ing.

また、図５に示すように下部基板３の厚みｄ２（給電パターン９の厚みを含む）が半導体発光素子Ｌの厚みｄ１よりも厚く形成されている（ｄ２＞ｄ１）。これにより、半導体発光素子Ｌの電極に接合されたボンディングワイヤのボールボンド部の直上部分αを半導体発光素子Ｌの光出射面１５に対して略垂直に立ち上がった状態に架線することができる。この部分は１ｓｔボンディング前のボール形成時に放電の熱によって結晶粒子が粗粒化した再結晶領域となっており、引張り強度や破断強度が弱い部分となっている。また、再結晶領域と通常結晶領域の境界には破断強度が弱い結晶粒界面も形成されている。
具体的には、下部基板３の厚みｄ２を１８０μｍ、半導体発光素子Ｌの厚みｄ１を１００μｍとしている。中継パターンを下部基板３上に設け、下部基板３の厚みｄ２を半導体発光素子Ｌの厚みｄ１よりも厚くすることにより、ボールボンド部よりステッチボンド部を高い位置とすることができる。そして、ボールボンド部よりステッチボンド部を高い位置とすることにより、再結晶領域αへの負荷の少ないボンディングワイヤのループ形状を維持しやすく、ボンディングワイヤの破断強度を高め、信頼性の高い半導体発光装置を提供することができる。
特に、再結晶領域αは、ボールボンド部から約５０〜１５０μｍの範囲で形成されること、半導体発光装置の薄型化のためボンディングワイヤのループ高さが低いことが望まれること、および、下部基板のエッジ接触を避ける必要があることを考慮すると、ステッチボンド部は、ボールボンド部より約４０〜１２０μｍ高い位置に形成されることが好ましい。 Further, as shown in FIG. 5, the thickness d2 of the lower substrate 3 (including the thickness of the power feeding pattern 9) is formed to be thicker than the thickness d1 of the semiconductor light emitting element L (d2> d1). As a result, the portion α directly above the ball bond portion of the bonding wire bonded to the electrode of the semiconductor light emitting element L can be installed in a state of rising substantially perpendicular to the light emitting surface 15 of the semiconductor light emitting element L. This portion is a recrystallized region in which crystal grains are coarsened by the heat of discharge during ball formation before the first bonding, and is a portion having low tensile strength and breaking strength. In addition, a crystal grain interface having a low breaking strength is formed at the boundary between the recrystallization region and the normal crystal region.
Specifically, the thickness d2 of the lower substrate 3 is 180 μm, and the thickness d1 of the semiconductor light emitting element L is 100 μm. By providing the relay pattern on the lower substrate 3 and making the thickness d2 of the lower substrate 3 larger than the thickness d1 of the semiconductor light emitting element L, the stitch bond portion can be positioned higher than the ball bond portion. And by making the stitch bond part higher than the ball bond part, it is easy to maintain the loop shape of the bonding wire with less load on the recrystallization region α, increase the breaking strength of the bonding wire, and reliable semiconductor light emission An apparatus can be provided.
In particular, the recrystallized region α is formed in a range of about 50 to 150 μm from the ball bond portion, the bonding wire is desired to have a low loop height in order to reduce the thickness of the semiconductor light emitting device, and the lower substrate. Considering that it is necessary to avoid edge contact, the stitch bond portion is preferably formed at a position higher by about 40 to 120 μm than the ball bond portion.

ところで、凹部内に充填された封止樹脂１６は、半導体発光素Ｌの発光時の発熱や周囲温度等に起因する温度変化によって膨張・収縮を繰り返す。封止樹脂の膨張・収縮の度合いは封止樹脂１６の厚みが厚い方向、つまり半導体発光素子Ｌの光出射面１５に平行な方向が最も大きい。   By the way, the sealing resin 16 filled in the recesses repeatedly expands and contracts due to temperature changes caused by heat generation, ambient temperature, and the like when the semiconductor light emitting element L emits light. The degree of expansion / contraction of the sealing resin is greatest in the direction in which the sealing resin 16 is thick, that is, in the direction parallel to the light emitting surface 15 of the semiconductor light emitting element L.

そこで、本発明のように、ボンディングワイヤ１２の引張り強度や破断強度が弱い領域を半導体発光素子Ｌの光出射面１５と略垂直に立ち上がった状態に架線することにより、封止樹脂１６の膨張・収縮によりボンディングワイヤ１２に垂直方向から加わる最大応力をボンディングワイヤ１２自身の撓みによって緩和することができ、ボンディングワイヤ１２を細線化や破断などの不具合から保護することができる。   Therefore, as in the present invention, the region of the bonding wire 12 having a low tensile strength or breaking strength is installed in a state of rising substantially perpendicular to the light emitting surface 15 of the semiconductor light emitting element L, whereby the expansion / expansion of the sealing resin 16 is performed. The maximum stress applied to the bonding wire 12 from the vertical direction by the contraction can be relieved by the bending of the bonding wire 12 itself, and the bonding wire 12 can be protected from defects such as thinning and breaking.

次に、本発明の半導体発光装置の製造方法について図６〜図１１を参照して説明する。まず、図６に示す絶縁基板準備工程において、所定の間隔で所定の大きさの第１の貫通孔２と貫通スリット２０を有する絶縁基板を準備する。この場合、絶縁基板にプレス加工等により第１の貫通孔２及び貫通スリット２０を設けてもよいし、樹脂による基板成形時に第１の貫通孔２及び貫通スリット２０を同時形成してもよい。   Next, a method for manufacturing a semiconductor light emitting device of the present invention will be described with reference to FIGS. First, in an insulating substrate preparation step shown in FIG. 6, an insulating substrate having first through holes 2 and through slits 20 having a predetermined size is prepared at predetermined intervals. In this case, the first through hole 2 and the through slit 20 may be provided in the insulating substrate by pressing or the like, or the first through hole 2 and the through slit 20 may be formed at the same time when the substrate is formed of resin.

次に、図７に示す多数個取り下部基板作製工程において、絶縁基板２１の一方の面及び貫通スリット２０の内面に導体パターン２２を形成して多数個取りの下部基板２３とする。この導体パターン２２は各第１の貫通孔２を囲んで反射パターン１１、中継パターン１０及び一対の給電パターン９となる部分が形成され、それらはいずれも貫通スリット２０内面の導体パターン２２と共に多数個取り下部基板２３の端部２４で一体に繋がっている。これにより、導体パターン２２上全面に亘って電解メッキにより順次Ｃｕメッキ、Ｎｉメッキ層が形成されている。さらに、反射パターン１１、中継パターン１０、給電パターン９における下部基板上面に形成された部分、および、図示しない第１の貫通孔２および第２の貫通孔４の内周面に形成された反射面にはＡｇメッキが施されている。貫通スリット２０の内面に形成された各導体パターン２２は夫々給電パターン９に繋がっており、そのため貫通スリット２０の部分はスルースリットを形成している。
つまり、各中継パターンは、多数個取り下部基板においては電気的に接続された状態で形成され、後のダイシング工程を経て電気的に独立したものとして形成することができる。従って、中継パターンは、下部電極上において、ダイシング工程による切断面となる側面側の端部まで延設している。そして、給電パターンの形成される側面は、下部基板に設けたスルースリットの内周面により構成されるため、中継パターンは、給電パターンの形成されていない側面側の端部まで延設する。 Next, in the multi-cavity lower substrate manufacturing step shown in FIG. 7, a conductor pattern 22 is formed on one surface of the insulating substrate 21 and the inner surface of the through slit 20 to obtain a multi-cavity lower substrate 23. This conductor pattern 22 surrounds each first through-hole 2 and is formed with a reflection pattern 11, a relay pattern 10, and a pair of power supply patterns 9, all of which are numerous together with the conductor pattern 22 on the inner surface of the through-slit 20. They are connected together at the end 24 of the lower substrate 23. Thus, a Cu plating layer and a Ni plating layer are sequentially formed on the entire surface of the conductor pattern 22 by electrolytic plating. Further, the reflection pattern 11, the relay pattern 10, the portion formed on the upper surface of the lower substrate in the power feeding pattern 9, and the reflection surface formed on the inner peripheral surfaces of the first through hole 2 and the second through hole 4 (not shown). Is plated with Ag. Each conductor pattern 22 formed on the inner surface of the through slit 20 is connected to the power feeding pattern 9, and thus the through slit 20 forms a through slit.
That is, each relay pattern is formed in an electrically connected state on the multi-piece lower substrate, and can be formed as an electrically independent pattern through a subsequent dicing process. Therefore, the relay pattern extends to the end portion on the side surface that becomes the cut surface in the dicing process on the lower electrode. And since the side surface in which a power feeding pattern is formed is comprised by the inner peripheral surface of the through slit provided in the lower board | substrate, a relay pattern is extended to the edge part of the side surface in which the power feeding pattern is not formed.

次に、図８に示す多数個取り上部基板貼り合わせ工程において、多数個取り下部基板２３の導体パターンが形成された面に、多数個取り下部基板２３の第１の貫通孔２に対応する位置に前記第１の貫通孔２よりも大きい第２の貫通孔４を有する多数個取り上部基板２５を絶縁性接着層（図示せず）を介して貼り合わせる。それと共に、多数個取り下部基板２３の導体パターンが形成された面の反対側に例えば銅箔等の金属箔からなる金属底板７を配設する。
絶縁性接着層には、ガラス繊維に未硬化の熱硬化性樹脂を含浸したプリプレグ、エポキシ樹脂等からなる接着シート、あるいは、ガラスエポキシ基板の両面に接着シートが配置された多層構造のものを用いるなど、用途や仕様に応じて変更したものを用いることができる。 Next, in the multi-cavity upper substrate bonding step shown in FIG. 8, positions corresponding to the first through holes 2 of the multi-cavity lower substrate 23 are formed on the surface of the multi-cavity lower substrate 23 on which the conductor pattern is formed. A multi-piece upper substrate 25 having a second through-hole 4 larger than the first through-hole 2 is bonded to each other through an insulating adhesive layer (not shown). At the same time, the metal bottom plate 7 made of a metal foil such as a copper foil is disposed on the opposite side of the surface of the lower substrate 23 on which the conductor pattern is formed.
As the insulating adhesive layer, a prepreg obtained by impregnating a glass fiber with an uncured thermosetting resin, an adhesive sheet made of an epoxy resin, or a multilayer structure in which an adhesive sheet is disposed on both surfaces of a glass epoxy substrate is used. For example, it is possible to use a modified one according to the application and specifications.

次に、図９に示す半導体発光素子実装工程において、多数個取り上部基板２５及び多数個取り下部基板２３の各第２の貫通孔４及び第１の貫通孔２で形成される凹部８の底面の金属底板７上に３個の半導体素子Ｌ１、Ｌ２、Ｌ３を搭載し、半導体発光素子Ｌ２のアノード電極ａをボンディングワイヤ１２ａを介して給電パターン９ａに接合し、半導体発光素子Ｌ２のカソード電極ｃ及び半導体発光素子Ｌ１のアノード電極ａを夫々ボンディングワイヤ１２ｂ、１２ｃを介して中継パターン１０ａに接合し、半導体発光素子Ｌ１のカソード電極ｃ及び半導体発光素子Ｌ３のアノード電極ａを夫々ボンディングワイヤ１２ｄ、１２ｅを介して中継パターン１０ｂに接合し、半導体発光素子Ｌ３のカソード電極ｃをボンディングワイヤを１２ｆを介して給電パターン９ｂに接合する（図４参照）。   Next, in the semiconductor light emitting device mounting step shown in FIG. 9, the bottom surface of the recess 8 formed by the second through holes 4 and the first through holes 2 of the multi-cavity upper substrate 25 and the multi-cavity lower substrate 23. The three semiconductor elements L1, L2, and L3 are mounted on the metal bottom plate 7, and the anode electrode a of the semiconductor light emitting element L2 is joined to the power supply pattern 9a via the bonding wire 12a, and the cathode electrode c of the semiconductor light emitting element L2 The anode electrode a of the semiconductor light emitting element L1 is bonded to the relay pattern 10a via bonding wires 12b and 12c, respectively. The cathode electrode c of the semiconductor light emitting element L1 and the anode electrode a of the semiconductor light emitting element L3 are bonded to bonding wires 12d and 12e, respectively. The cathode electrode c of the semiconductor light emitting element L3 is bonded to the relay pattern 10b via the bonding wire 12f. Te is bonded to the power feeding pattern 9b (see FIG. 4).

このとき、半導体発光素子Ｌ１、Ｌ２、Ｌ３の各電極とボンディングワイヤ１２はいずれもボールボンド部１３を介して接合され、各給電パターン９ａ、９ｂ及び各中継パターン１０ａ、１０ｂとボンディングワイヤ１２はいずれもステッチボンド部１４を介して接合される。   At this time, each of the electrodes of the semiconductor light emitting elements L1, L2, and L3 and the bonding wire 12 are all bonded through the ball bond portion 13, and each of the power supply patterns 9a and 9b, each of the relay patterns 10a and 10b, and the bonding wire 12 is Are also joined via the stitch bond portion 14.

次に、図１０に示す封止樹脂充填工程において、各凹部８内に封止樹脂１６を充填し、半導体発光素子Ｌ１、Ｌ２、Ｌ３及びボンディングワイヤ１２を樹脂封止する。   Next, in the sealing resin filling step shown in FIG. 10, the sealing resin 16 is filled in each recess 8, and the semiconductor light emitting elements L 1, L 2, L 3 and the bonding wire 12 are resin sealed.

次に、図１１に示すダイシング工程において、半導体発光素子Ｌ１、Ｌ２、Ｌ３が実装された多数個取り貼り合わせ基板２６を所定の間隔でダイシングして個々の半導体発光装置１に個片化し、半導体発光装置の製造工程が終了する。
ダイシング工程において、下部基板のスルースリット（中央）に沿うダイシングライン２７ａと、直交するダイシングライン２７ｂにより個片化されるため、半導体発光装置１の上部基板の４つの側面はいずれも切断面で構成され、半導体発光装置１の下部基板の４つの側面は、対向する２つの切断面と、該切断面に挟まれたスルースリット内周面で構成される。 Next, in the dicing step shown in FIG. 11, a large number of bonded substrates 26 on which the semiconductor light emitting elements L1, L2, and L3 are mounted are diced at predetermined intervals to be singulated into individual semiconductor light emitting devices 1. The manufacturing process of the light emitting device is completed.
In the dicing process, each of the four side surfaces of the upper substrate of the semiconductor light emitting device 1 is constituted by a cut surface because the dicing line 27a along the through slit (center) of the lower substrate and the dicing lines 27b orthogonal to each other are separated. Then, the four side surfaces of the lower substrate of the semiconductor light emitting device 1 are constituted by two opposing cut surfaces and an inner peripheral surface of the through slit sandwiched between the cut surfaces.

ところで、この製造工程からわかるように、ダイシング工程までは多数個取り下部基板を構成する絶縁基板の一方の面及びスリットの内面に形成された導体パターンが全て基板の端部で一体に繋がっている、そのため導体パターン全面に亘って電解メッキを施すことが可能となる。   By the way, as can be seen from this manufacturing process, all the conductor patterns formed on one surface of the insulating substrate and the inner surface of the slit constituting the lower substrate are integrally connected at the end of the substrate until the dicing step. Therefore, it is possible to perform electrolytic plating over the entire conductor pattern.

その後、ダイシング工程による個片化によって一体に繋がった導体パターンが切断、分離され、反射パターン、一対の中継パターン及び一対の給電パターンの夫々が独立した状態となり、各独立したパターンの夫々が半導体発光素子の直列内部結線に寄与するものとなる。   Thereafter, the conductor patterns that are integrally connected by the dicing process are cut and separated, and the reflection pattern, the pair of relay patterns, and the pair of power supply patterns become independent, and each of the independent patterns emits light from the semiconductor. This contributes to the series internal connection of the elements.

このように、多数個取り下部基板において導体パターンの全てを一体に繋がった状態に形成することで、個片化後の個々の半導体発光装置の信頼性を向上させることが可能となる。   As described above, by forming all the conductor patterns in the multi-piece lower substrate so as to be integrally connected, it is possible to improve the reliability of the individual semiconductor light emitting devices after being separated.

以上、詳細に説明したように、本発明の半導体発光装置は、発光源となる複数の半導体発光素子を直列に接続してなる内部結線を有し、結線を構成するボンディングワイヤと半導体発光素子の電極との接続をすべてボンディングワイヤの１ｓｔボンディングで形成されるボールボンド部を介して行うようにした。そのために、外部との電気的な繋がりを持たない中継パターンを設け、３つの半導体発光素子のうち互いに隣接する２つの半導体発光素子の互いに極性の異なる電極同士を、中継パターンを中継点として接続する２本のボンディングワイヤで電気的に接続するようにした。   As described above in detail, the semiconductor light-emitting device of the present invention has an internal connection formed by connecting a plurality of semiconductor light-emitting elements serving as light emission sources in series, and includes a bonding wire and a semiconductor light-emitting element that form the connection. All the connections with the electrodes are made through ball bond portions formed by 1st bonding of bonding wires. For this purpose, a relay pattern having no electrical connection to the outside is provided, and electrodes having different polarities of two adjacent semiconductor light emitting elements among the three semiconductor light emitting elements are connected using the relay pattern as a relay point. Electrical connection was made with two bonding wires.

その結果、半導体発光素子の各電極とボンディングワイヤの接合強度が、ステッチボンド部を介して接合される場合に比べて極めて高くなり、高い接合信頼性を確保することが可能となった。   As a result, the bonding strength between each electrode of the semiconductor light emitting element and the bonding wire is extremely higher than that in the case of bonding through the stitch bond portion, and it is possible to ensure high bonding reliability.

また、半導体発光素子の全ての電極側にボールボンド部を形成することが可能となったことにより、半導体発光素子の光出射面に対する電極の面積比をステッチボンド部で接合する場合よりも小さくすることができた。そのため、半導体発光素子の光出射面の面積を大きく確保することが可能となり光取り出し効率の向上を図ることができようになった。   In addition, since it becomes possible to form ball bond portions on all the electrode sides of the semiconductor light emitting device, the area ratio of the electrodes to the light emitting surface of the semiconductor light emitting device is made smaller than that in the case of joining at the stitch bond portion. I was able to. For this reason, it is possible to ensure a large area of the light emitting surface of the semiconductor light emitting device, and to improve the light extraction efficiency.

また、半導体発光装置を構成する下部基板の厚みを半導体発光素子の厚みよりも厚く形成し半導体発光素子の電極に接合されたボンディングワイヤのボールボンド部の直上部分を半導体発光素子の光出射面に対して略垂直に立ち上がった状態に架線するようにした。これにより、ボンディングワイヤの１ｓｕボンディング前のボール形成時に放電の熱によって結晶粒子が粗粒化して引張り強度や破断強度が弱くなった部分に加わる封止樹脂の膨張・収縮による垂直方向からの応力を、ボンディングワイヤ自身の撓みによって緩和できるようになった。その結果、ボンディングワイヤを細線化や破断などの不具合から保護することが可能となった。   Further, the thickness of the lower substrate constituting the semiconductor light emitting device is made larger than the thickness of the semiconductor light emitting element, and the portion directly above the ball bond portion of the bonding wire bonded to the electrode of the semiconductor light emitting element is used as the light emitting surface of the semiconductor light emitting element. On the other hand, it was constructed so as to stand up almost vertically. As a result, the stress from the vertical direction due to the expansion / contraction of the sealing resin applied to the portion where the crystal grains are coarsened by the heat of discharge during the formation of the ball before bonding 1su of the bonding wire and the tensile strength or breaking strength is weakened. This can be alleviated by the bending of the bonding wire itself. As a result, it has become possible to protect the bonding wire from defects such as thinning and breaking.

更に、半導体発光素子を金属箔からなる金属底板上に直接搭載するようにした。その結果、半導体発光素子の点灯時に発生する熱を熱抵抗が低い金属底板内を伝導させて外部に放散させることができ、半導体発光素子の温度上昇を抑制することができるようになった。その結果、半導体発光素子の良好な発光効率を確保すると共に、長寿命化も実現することが可能となった。   Further, the semiconductor light emitting device is directly mounted on a metal bottom plate made of a metal foil. As a result, heat generated when the semiconductor light emitting element is turned on can be conducted through the metal bottom plate having a low thermal resistance to be dissipated to the outside, and the temperature rise of the semiconductor light emitting element can be suppressed. As a result, it is possible to ensure a good light emission efficiency of the semiconductor light emitting device and to achieve a long life.

本発明の半導体発光装置の内部結線図である。It is an internal connection figure of the semiconductor light-emitting device of this invention. 本発明の半導体発光装置の上面図である。It is a top view of the semiconductor light-emitting device of this invention. 図２のＡ−Ａ断面図である。It is AA sectional drawing of FIG. 図２の部分拡大図である。FIG. 3 is a partially enlarged view of FIG. 2. 図３の部分拡大図である。FIG. 4 is a partially enlarged view of FIG. 3. 本発明の半導体発光装置の製造工程図の一部である。It is a part of manufacturing-process figure of the semiconductor light-emitting device of this invention. 同じく、本発明の半導体発光装置の製造工程図の一部である。Similarly, it is a part of manufacturing process figure of the semiconductor light-emitting device of this invention. 同じく、本発明の半導体発光装置の製造工程図の一部である。Similarly, it is a part of manufacturing process figure of the semiconductor light-emitting device of this invention. 同じく、本発明の半導体発光装置の製造工程図の一部である。Similarly, it is a part of manufacturing process figure of the semiconductor light-emitting device of this invention. 同じく、本発明の半導体発光装置の製造工程図の一部である。Similarly, it is a part of manufacturing process figure of the semiconductor light-emitting device of this invention. 同じく、本発明の半導体発光装置の製造工程図の一部である。Similarly, it is a part of manufacturing process figure of the semiconductor light-emitting device of this invention. 従来例の説明図である。It is explanatory drawing of a prior art example.

符号の説明Explanation of symbols

１ 半導体発光装置
２ 第１の貫通孔
３ 下部基板
４ 第２の貫通孔
５ 上部基板
６ 絶縁性接着層
７ 金属底板
８ 凹部
９ 給電パターン
９ａ、９ｂ 給電パターン
１０ 中継パターン
１０ａ、１０ｂ 中継パターン
１１ 反射パターン
１２ ボンディングワイヤ
１２ａ、１２ｂ、１２ｃ、１２ｄ、１２ｅ、１２ｆ ボンディングワイヤ
１３ ボールボンド部
１４ ステッチボンド部
１５ 光出射面
１６ 封止樹脂
２０ 貫通スリット
２１ 絶縁基板
２２ 導体パターン
２３ 多数個取り下部基板
２４ 端部
２５ 多数個取り上部基板
２６ 多数個取り貼り合わせ基板
２７ａ、２７ｂ ダイシングライン DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 1st through-hole 3 Lower substrate 4 2nd through-hole 5 Upper substrate 6 Insulating adhesive layer 7 Metal bottom plate 8 Recess 9 Feed pattern 9a, 9b Feed pattern 10 Relay pattern 10a, 10b Relay pattern 11 Reflection Pattern 12 Bonding wire 12a, 12b, 12c, 12d, 12e, 12f Bonding wire 13 Ball bond portion 14 Stitch bond portion 15 Light exit surface 16 Sealing resin 20 Through slit 21 Insulating substrate 22 Conductor pattern 23 Multi-piece lower substrate 24 End Part 25 Multi-piece upper substrate 26 Multi-piece bonded substrate 27a, 27b Dicing line

Claims (4)

第１の貫通孔を有する第１の絶縁基板と、
前記第１の絶縁基板の下面に前記第１の貫通孔を塞ぐように配設された金属底板と、
前記第１の貫通孔内の前記金属底板上に配置された複数の半導体発光素子とを備え、
前記複数の半導体発光素子が直列接続されてなる半導体発光装置であって、
前記複数の半導体発光素子は、上面に対となる両電極を有し、
前記第一の絶縁基板上に形成され、前記半導体発光素子の電極とボンディングワイヤを介して電気的に接続されて外部からの給電を受ける一対の給電パターンと、
前記第一の絶縁基板上に前記給電パターと分離して形成され、前記複数の半導体発光素子のうち２つの半導体発光素子の互いに極性の異なる電極とボンディングワイヤを介して電気的に接続された中継パターンを有し、
前記一対の給電パターンおよび中継パターンは、前記第一の絶縁基板の上面にて前記第一の貫通孔を囲んで形成され、ボンディングワイヤで接続された部分から当該第一の絶縁基板の側面側の端部まで当該基板の上面に延設して形成されており、前記複数の半導体発光素子の両電極とボンディングワイヤがボールボンド部を介して接合されていることを特徴とする半導体発光装置。 A first insulating substrate having a first through hole;
A metal bottom plate disposed on the lower surface of the first insulating substrate so as to close the first through hole;
A plurality of semiconductor light emitting elements disposed on the metal bottom plate in the first through-hole,
A semiconductor light emitting device in which the plurality of semiconductor light emitting elements are connected in series,
The plurality of semiconductor light emitting devices have both electrodes paired on the upper surface,
A pair of power supply patterns formed on the first insulating substrate, electrically connected to the electrodes of the semiconductor light emitting element via bonding wires and receiving power from the outside;
A relay formed on the first insulating substrate separately from the power supply pattern and electrically connected to electrodes of two semiconductor light emitting elements having different polarities from each other through bonding wires. Has a pattern,
The pair of power supply patterns and relay patterns are formed on the upper surface of the first insulating substrate so as to surround the first through hole, and are connected to the side of the first insulating substrate from a portion connected by a bonding wire. A semiconductor light emitting device , wherein the semiconductor light emitting device is formed so as to extend to the upper surface of the substrate up to an end portion , and both electrodes of the plurality of semiconductor light emitting elements and bonding wires are bonded via ball bond portions. 前記給電パターンは前記第１の絶縁基板の側面を経由して底面まで延設されていることを特徴とする請求項１に記載の半導体発光装置。 The semiconductor light emitting device according to claim 1 wherein the feeding pattern is characterized in that it is extended to the bottom surface via the side surface of the first insulating substrate. 前記ボンディングワイヤが前記給電パターンに結線されたステッチボンド部が、前記ボールボンド部より高い位置に形成されることを特徴とする請求項１または２のいずれかに記載の半導体発光装置。   3. The semiconductor light emitting device according to claim 1, wherein a stitch bond portion in which the bonding wire is connected to the power supply pattern is formed at a position higher than the ball bond portion. 前記第１の絶縁基板上面に絶縁性接着層を介して貼り合わされた、前記第１の貫通孔よりも大きい第２の貫通孔を有する第２の絶縁基板を備えることを特徴とする請求項１乃至３のいずれかに記載の半導体発光装置。   2. A second insulating substrate having a second through hole larger than the first through hole, which is bonded to the upper surface of the first insulating substrate via an insulating adhesive layer. 4. The semiconductor light emitting device according to any one of items 1 to 3.
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