JP2013149843A - Semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is unlikely to cause failures that damage the confidence of users even in a high temperature atmosphere of solder melting heat at a solder reflow process during substrate mounting.SOLUTION: A base substrate 30 is formed by bonding an upper substrate 10 to a lower substrate 20 with an insulative bonding member, and a semiconductor light emitting element 3 die-bonded in a recessed part 11 of the base substrate 30 is covered by a phosphor containing resin 5 filling the recessed part 11. Then, the phosphor containing resin 5 is covered by a resin having a thermal expansion coefficient smaller than that of the phosphor containing resin 5 to form a sealing resin part 6. Concurrently, an annular metal pattern 12a is formed so as to enclose an upper edge of the recessed part 11 on a front surface of the base substrate 30, and the entire annular metal pattern 12a is covered by the sealing resin part 6. In this structure, expansion stress caused by thermal expansion of the phosphor containing resin 5 is relaxed by the annular metal pattern 12a in a high temperature atmosphere at a solder reflow process and cracks are prevented from occurring in the sealing resin part 6 positioned at the upper side.

Description

  The present invention relates to a semiconductor light-emitting device, and more particularly to a semiconductor light-emitting device having a configuration in which a crack is not generated in a sealing resin for sealing a semiconductor light-emitting element in a solder reflow process during substrate mounting.

  Conventionally, as a semiconductor light emitting device, a semiconductor light emitting device having a structure shown in FIG. 16 (a (plan view), b (a sectional view taken along line AA) in FIG. 16) has been proposed.

  That is, an upper substrate 80 having a through hole and a lower substrate 81 are bonded together to form a light emitting element mounting substrate 82, and the inner surface of the recess 83 from the bottom surface (by the upper surface of the lower substrate) of the recess 83 (by the through hole) and The first electrode 84 goes around the side surface of the light emitting element mounting substrate 82 and the lower surface of the lower substrate 81 via the upper surface of the upper substrate 80, and goes around the side surface of the light emitting element mounting substrate 82 and the lower surface of the lower substrate 81 via the upper surface of the upper substrate 80. The second electrode 85 is formed separately from each other.

  Then, the light emitting element 86 is die-bonded on the first electrode 84 located on the bottom surface of the recess 83 to achieve electrical connection between the lower electrode of the light emitting element 86 and the first electrode 84, and the second electrode 85 and the light emitting element 86 are connected. The upper electrode of the light emitting element 86 and the second electrode 85 are electrically connected by wire bonding with the upper electrode of the light emitting element 86.

  Furthermore, a package 88 made of a light-transmitting resin such as an epoxy resin is formed so as to fill the recess 83 and cover a part of each of the first electrode 84 and the second electrode 85 located on the upper surface of the upper substrate 80, The light emitting element 86 and the bonding wire 87 are resin-sealed by the package 88 (see Reference 1).

JP 2001-127345 A

  By the way, in recent years, the semiconductor light-emitting device is used as a light source for a vehicle lamp, a household lighting fixture, and the like. In that case, a white semiconductor light-emitting device that emits white light is required.

  Therefore, in order to realize a white semiconductor light-emitting device based on the semiconductor light-emitting device, for example, a blue light-emitting element that emits blue light is used as the light-emitting element, and a phosphor is contained in the light-transmitting resin in the recess 83. The blue light-emitting element is sealed with the phosphor-containing resin by filling the phosphor-containing resin 89 formed as described above.

  In this case, for example, the phosphor is excited by blue light and converted to yellow light, or converted to yellow light, or red light that is excited by blue light and converted to red light and red light and excited by blue light and green light. A mixed phosphor with a green phosphor for wavelength conversion is used. However, the type and the number of the phosphors are not limited to this, and an optimum selection for realizing the required light color is performed.

  The phosphor-containing resin 89 filled in the recess 83 and the light-transmitting resin such as an epoxy resin so as to cover a part of each of the first electrode 84 and the second electrode 85 located on the upper surface of the upper substrate 80. A package 88 is formed.

  By the way, when the light-transmitting resin containing the phosphor has a larger thermal expansion coefficient than the epoxy resin forming the package, specifically, in the case of a silicone resin, the thermal expansion coefficient differs greatly between the silicone resin and the epoxy resin.

  Therefore, when the semiconductor light emitting device is mounted on the substrate by solder reflow, the phosphor-containing resin 89 in the recess 83 is thermally expanded by the solder melting heat at the time of solder reflow, and the phosphor located on the phosphor-containing resin 89 is obtained. An upward expansion stress is applied to the package 88 made of an epoxy resin having a smaller thermal expansion coefficient than the light-transmitting resin contained.

  Therefore, a portion of the package 88 located on the concave portion 83 filled with the phosphor-containing resin 89 is pushed upward, and the pushing force spreads radially from the upper portion of the concave portion 83 to the periphery thereof. As a result, the first electrode 84 is peeled at the interface between the package 88 and a region (annular portion) 84a that is annularly positioned so as to surround the upper edge of the recess 83 and is not covered with the phosphor-containing resin 89. The separation occurs and proceeds to the outer periphery of the package 88 along the land portion 84b extending from the annular portion 84a of the first electrode 84 to the outside of the package 88.

  Then, in the semiconductor light emitting device mounted on the substrate through the solder reflow process, moisture, salt, dust, etc. existing in the use environment are formed in the separation space where the first electrode 84 is formed along the land portion 84b and the annular portion 84a. Enters toward the center of the package 88 and finally reaches the light emitting element 86.

  As a result, the deterioration of the light-emitting element 86 is promoted, leading to a decrease in optical performance due to a decrease in luminous intensity or non-lighting, and a reduction in element life. In other words, the reliability of the semiconductor light emitting device is impaired.

  Such a problem is particularly noticeable and serious in lead-free solder having a melting point of about 260 ° C., which is higher than that of lead solder having a melting point of about 200 ° C.

  Accordingly, the present invention was devised in view of the above problems, and the object of the present invention is to have a defect that impairs reliability even in a high temperature atmosphere of solder melting heat in a solder reflow process when mounting a board. It is an object of the present invention to provide a semiconductor light emitting device that does not cause the above.

  In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention includes a mounting substrate, an upper substrate having a through hole disposed on the mounting substrate, and the mounting substrate in the through hole. A semiconductor light emitting device die-bonded on top, a first resin filled in the through hole, a second resin covering the first resin and the upper surface of the upper substrate, the upper substrate, The upper surface has a conductive pattern formed from the upper edge of the through hole or near the upper edge toward the outside of the through hole, the first resin is in contact with the conductive pattern, and the conductive pattern is the entire outer edge. Is covered with the second resin.

  The invention described in claim 2 of the present invention is characterized in that, in claim 1, the first resin has a thermal expansion coefficient larger than that of the second resin.

  The invention described in claim 3 of the present invention is characterized in that in claim 1 or 2, the first resin contains a wavelength conversion member.

  Further, in the invention described in claim 4 of the present invention, in any one of claims 1 to 3, the conductive pattern is formed in an annular shape so as to surround an upper edge of the through hole. It is a feature.

  The invention described in claim 5 of the present invention is characterized in that, in any one of claims 1 to 4, the outer edge of the conductive pattern is formed in a curved shape.

  According to a sixth aspect of the present invention, in the fourth or fifth aspect, the upper substrate has a power receiving pattern formed on the upper surface so as to be separated from the conductive pattern, and the semiconductor light emitting device. A conductive wire connecting the electrode and the power receiving pattern, wherein the conductive pattern is a resin amount of the first resin in a region sandwiched between an inner side surface of the through hole and each side surface of the semiconductor light emitting element There is a region where the width from the upper edge of the through hole or the vicinity of the upper edge to the outer edge is wider than the other part in at least one direction other than the direction in which the conductive wire is wired. It is characterized by that.

  The semiconductor light-emitting device of the present invention is a semiconductor light-emitting element in which an upper substrate having a through hole and a metal pattern directed outward from the upper edge or near the upper edge of the through hole is disposed on the mounting substrate, and die-bonded in the through hole Was covered with a first resin filled in the through holes, and the entire first resin and the entire metal pattern were covered with a second resin having a smaller thermal expansion coefficient than that of the first resin.

  As a result, in the solder reflow process at the time of mounting the substrate of the semiconductor light emitting device, the expansion stress due to the thermal expansion of the first resin in the high temperature atmosphere of the solder melting heat is relieved by the metal pattern portion, and the second resin located above The generation of cracks against is suppressed.

It is a top view of the semiconductor light emitting device of the embodiment. It is AA sectional drawing of FIG. It is a perspective view of the semiconductor light-emitting device of an embodiment. It is explanatory drawing of the manufacturing process of a semiconductor light-emitting device. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. Similarly, it is explanatory drawing of a manufacturing process. It is a top view explaining other embodiment. It is explanatory drawing of a cyclic | annular metal pattern. It is explanatory drawing of other embodiment. It is explanatory drawing of a prior art example.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 15 (the same reference numerals are given to the same portions). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  1 is a top view of an embodiment according to the present invention, FIG. 2 is a cross-sectional view taken along the line AA of FIG. 1, and FIG. 3 is a perspective view.

  The semiconductor light emitting device 1 includes a substantially rectangular upper substrate 10 having a through hole 11 and a metal pattern (front side metal pattern 12) formed on one side (front side), and both sides (front side and back side). Are formed of two substrates of a substantially rectangular lower substrate 20 having a metal pattern (a front-side metal pattern 21 and a back-side metal pattern 22) formed thereon. The back side surface of the upper substrate 10 and the front side surface of the lower substrate 20 are insulating adhesives. Or it has the 2 layer structure bonded together by insulating adhesive members, such as an insulating adhesive sheet, and the base substrate 30 is comprised by this 2 layer structure.

  Among them, the front-side metal pattern 12 of the upper substrate 10 includes an annular metal pattern 12 a formed in an annular shape so as to surround the upper edge of a cylindrical through hole (a cylindrical recess as the base substrate 30) 11, and the upper substrate 10. Are formed of a pair of front side edge metal patterns 12b and 12c formed inwardly from both opposite edges, and a wire bonding pad 12d extending inwardly protruding from the front side edge metal pattern 12c. . The annular metal pattern 12 a and the front side edge metal patterns 12 b and 12 c are formed on the upper substrate 10 so as to be separated from each other.

  The front metal pattern 21 of the lower substrate 20 is located between the upper substrate 10 and the lower substrate 20 and is formed so as to form the bottom surface of the recess 11.

  On the other hand, the back-side metal pattern 22 of the lower substrate 20 is a pair formed inwardly from the opposite edges of the lower substrate 20 like the front-side edge metal patterns 12b and 12c of the upper substrate 10 positioned above. The front side edge metal pattern 12b and the back side edge metal pattern 22b, and the front side edge metal pattern 12c and the back side edge metal pattern 22c are opposed to each other in the vertical direction. Is located.

  The back side edge metal pattern 22b and the back side edge metal pattern 22c are bonded to the electrode pattern formed on the substrate to fix the semiconductor light emitting device 1 to the substrate when the semiconductor light emitting device 1 is mounted on the substrate. It functions as a fixed support portion that performs the function of a power receiving electrode that takes in electric power from the outside to the semiconductor light emitting device 1. That is, the back side edge metal pattern 22b and the back side edge metal pattern 22c are joined to a substrate such as a circuit board through solder by a solder reflow process or the like.

  The concave portion 11 has a metal pattern (concave metal pattern 12e) formed on the inner surface, and an annular metal pattern 12a surrounding the upper edge of the concave portion 11 and a front side metal pattern 21 serving as a bottom surface of the concave portion 11 via the concave metal pattern 12e. Connected.

  Furthermore, the front side edge metal pattern 12b, the front side metal pattern 21, and the back side edge metal pattern 22b are connected via a side metal pattern 31b formed on the side surface of the base substrate 30, and the front side edge metal pattern 12c and the back side. The edge metal pattern 22c is connected via a side metal pattern 31c formed on the side surface opposite to the side surface on which the side metal pattern 31b is formed.

  That is, in the base substrate 30, the annular metal pattern 12a, the concave metal pattern 12e, the front side metal pattern 21, the front side edge metal pattern 12b, the back side edge metal pattern 22b, and the side surface metal pattern 31b are in a connected state, and the front side edge metal The pattern 12c, the back side edge metal pattern 22c, and the side surface metal pattern 31c are in a connected state.

  Then, the semiconductor light emitting element 3 is die-bonded on the front side metal pattern 21 positioned on the bottom surface of the recess 11 to achieve electrical conduction between the lower electrode of the semiconductor light emitting element 3 and the front side metal pattern 21, and the front side edge metal pattern. The wire bonding pad 12d extended from 12c and the upper electrode of the semiconductor light emitting element 3 are wire-bonded by the bonding wire 4 to achieve electrical conduction between the upper electrode of the semiconductor light emitting element 3 and the front side edge metal pattern 12c. Yes.

  The recess 11 is filled with a phosphor-containing resin 5 containing a phosphor in a light-transmitting resin so as to be substantially flush with the upper surface of the annular metal pattern 12a, and is die-bonded in the recess 11 The entire light emitting element 3 is covered with the phosphor-containing resin 5. The upper surface of the phosphor-containing resin 5 may be formed so as to rise from the inside of the recess 11 as shown in FIG. Here, the phosphor-containing resin 5 is formed from the upper edge or the vicinity of the upper edge of the concave portion toward the outside of the concave portion, and the concave metal pattern 12e formed continuously from the annular metal pattern 12a. It is filled so that it touches. The annular metal pattern 12a is not necessarily formed on the upper edge of the through hole 11 of the upper substrate 10, and may be formed outside the upper edge. In this case, however, the phosphor-containing pattern The resin 5 is filled in contact with the annular metal pattern 12a. Further, the concave metal pattern 12e can be arbitrarily formed, but when the phosphor-containing resin 5 is not filled up to the upper surface of the concave portion 11, a concave metal pattern 12e continuous with the annular metal pattern 12a is formed, and fluorescent The body-containing resin 5 is filled in contact with the concave metal pattern 12e.

  Therefore, when the semiconductor light emitting device 1 is a white semiconductor light emitting device that emits white light, for example, a blue semiconductor light emitting device that emits blue light is used as the semiconductor light emitting device 3, and the phosphor constituting the phosphor-containing resin 5 is used. For example, a yellow phosphor that is excited by blue light emitted from a blue semiconductor light emitting element and converts the wavelength to yellow light, or a red phosphor that is excited by blue light and wavelength-converts to red light and excited by blue light and green A mixed phosphor with a green phosphor that converts wavelength into light is used. However, the type and the number of the phosphors are not limited to this, and an optimal selection is performed to realize the light color required for the semiconductor light emitting device 1.

  On the front side surface of the upper substrate 10 (base substrate 30), a sealing resin portion 6 made of a light-transmitting resin is formed, and a convex lens portion 6a is formed on the semiconductor light emitting element 3 in the central portion. The sealing resin portion 6 includes the entire surface of the phosphor-containing resin 5 filled in the recess 11, the entire annular metal pattern 12a, a portion of the front edge metal pattern 12b, and the front edge including the entire wire bonding pad 12d. A portion of the partial metal pattern 12c is covered.

  Note that different materials are used for the light-transmitting resin forming the sealing resin portion 6 and the light-transmitting resin forming the phosphor-containing resin 5, and the light-transmitting resin forming the phosphor-containing resin 5 is sealed. A material having a larger thermal expansion coefficient than that of the light-transmitting resin forming the stop resin portion 6 is used. Specifically, for example, a silicone resin is used as a light transmissive resin material constituting the phosphor-containing resin 5, and an epoxy resin is used as a light transmissive resin material forming the sealing resin portion 6.

  As can be seen from FIGS. 1 to 3, the annular metal pattern 12 a formed in an annular shape so as to surround the upper edge of the recess 11 is not uniform in width, and the bonding wire 4 is wired to the recess 11. In other words, it has a shape having a wide extension 12aa extending in the direction of the front edge metal pattern 12b.

  When the semiconductor light emitting device 1 having such a configuration is put into a high temperature atmosphere (a temperature around 260 ° C. when lead-free solder is used) in a solder reflow process for board mounting, the heat filled in the recess 11 An upward expansion stress is applied to the sealing resin portion 6 having a smaller thermal expansion coefficient than that of the phosphor-containing resin 5 on which the phosphor-containing resin 5 having a large expansion coefficient is located due to thermal expansion.

  Then, a portion of the sealing resin portion 6 located on the concave portion 11 filled with the phosphor-containing resin 5 is pushed upward, and the pushing force spreads radially from the upper portion of the concave portion 11 to the periphery thereof.

  At this time, if the semiconductor light-emitting device is the semiconductor light-emitting device having the conventional structure described in “Background Art”, as described above, the portion of the first electrode 84 positioned in an annular shape so as to surround the upper edge of the recess 83 ( The annular portion 84a is peeled off at the interface between the package 88 and the region not covered with the phosphor-containing resin 89, and the peeling is a land extended from the annular portion 84a of the first electrode 84 to the outside of the package 88. It progresses to the outer periphery of the package 88 along the part 84b.

  Then, in the semiconductor light emitting device mounted on the substrate through the solder reflow process, moisture, salt, dust, etc. existing in the use environment are formed in the separation space where the first electrode 84 is formed along the land portion 84b and the annular portion 84a. Enters toward the center of the package 88 and finally reaches the light emitting element 86.

  Further, a crack may be generated in the package 88 starting from the peeled portion. This may cause mechanical damage such as breakage of the semiconductor light emitting element and cutting of the bonding wire.

  As a result, the deterioration of the light-emitting element 86 is promoted, leading to a decrease in optical performance due to a decrease in luminous intensity or non-lighting, and a reduction in element life. In other words, the reliability of the semiconductor light emitting device is impaired (see FIG. 16).

  On the other hand, in the semiconductor light emitting device 1 of the present invention, the annular metal pattern 12a formed in an annular shape so as to surround the upper edge of the recess 11 is entirely covered with the sealing resin portion 6, and the sealing resin portion 6 It does not extend to the outside.

  Therefore, when the phosphor-containing resin 5 filled in the recess 11 is thermally expanded by the solder melting heat in the solder reflow process, the expansion stress due to the thermal expansion is the recess of the sealing resin portion 6 filled with the phosphor-containing resin 5. 11 is added to the part located on the top, and the part is pushed upward. Then, the pushing force spreads radially from the top of the recess 11 of the sealing resin portion 6 and is also applied to a portion on the annular metal pattern 12 a that is annularly positioned so as to surround the upper edge of the recess 11.

  As a result, the sealing resin part 6 that has received the pushing-up force has a strong adhesive force with the phosphor-containing resin 5 due to the adhesive force with the annular metal pattern 12a, and therefore the annular metal pattern 12a and the sealing resin part 6 Interfacial delamination occurs, and most of the expansion stress generated in the phosphor-containing resin 5 due to the interfacial delamination is alleviated, and the generation of cracks in the sealing resin portion 6 is suppressed. This interfacial peeling is performed on the annular metal pattern 12a formed on the annular metal pattern 12a or the concave metal pattern 12e formed continuously with the annular metal pattern from the upper edge or the vicinity of the upper edge to the outside of the depression. It starts in the outward direction of the recess 11 starting from the end covered with the stop resin portion 6 (that is, the boundary with the end covered with the phosphor-containing resin 5).

  Furthermore, the shape of the annular metal pattern 12a is not formed with a uniform width over the entire circumference of the annular shape, and is wider toward the side opposite to the side where the bonding wire 4 is wired with respect to the recess 11. It has a shape having a wide extension 12aa extended in the direction of the front side edge metal pattern 12b.

  The extending direction of the wide extension portion 12aa of the annular metal pattern 12a is such that the distance between the inner side surface of the cylindrical recess 11 and each side surface of the substantially square semiconductor light emitting element 3 die-bonded in the recess 11 is as follows. At least one of the long directions. In other words, it is at least one of the directions in which the volume is large in a region sandwiched between the inner side surface of the recess 11 and each side surface of the semiconductor light emitting element 3, and the region has a direction in which the amount of the phosphor-containing resin 5 filled is large But there is.

  Thereby, in the phosphor-containing resin 5 in the recess 11 that thermally expands due to the solder melting heat in the solder reflow process, the region where the amount of the filled resin is large becomes the region where the expansion stress due to thermal expansion is the largest, and the annular metal pattern 12a in this direction. Wide extension portion 12aa is formed.

  As a result, strong expansion stress due to thermal expansion of the phosphor-containing resin 5 is applied to the wide extension portion 12aa which is a portion having a large area of the annular metal pattern 12a. Then, the strong expansion stress causes interface peeling between the wide extension portion 12aa having a larger area than the other portions of the annular metal pattern 12a and the sealing resin 6, and most of the expansion stress due to the phosphor-containing resin 5 is The wide extension portion 12aa will alleviate the occurrence of cracks in the sealing resin portion 6.

  In this way, the entire annular metal pattern 12a formed in an annular shape so as to surround the upper edge of the recess 11 filled with the phosphor-containing resin 5 so as to cover the die-bonded semiconductor light emitting element 3 is sealed in the sealing resin portion 6. The expansion stress due to the thermal expansion of the phosphor-containing resin 5 in the high-temperature atmosphere of the solder melting heat in the solder reflow process at the time of mounting on the substrate is also applied to the portion of the sealing resin portion 6 on the annular metal pattern 12a. In addition, interface peeling occurs between the annular metal pattern 12a and the sealing resin portion 6, and most of the expansion stress generated in the phosphor-containing resin 5 due to the interface peeling is alleviated. The occurrence of cracks in the stop resin portion 6 is suppressed. The annular metal pattern 12a is formed so as to be separated from the front side edge metal patterns 12b and 12c, and the outer edge of the annular metal pattern 12a is formed so as to be accommodated in the sealing resin portion 6. Is not generated on the annular metal pattern 12a at the maximum and does not lead to the outside of the sealing resin portion 6.

  In addition, the shape of the annular metal pattern 12a is not formed with a uniform width over the entire circumference of the annular shape, but contains phosphors in a region sandwiched between the inner side surface of the recess 11 and each side surface of the semiconductor light emitting element 3. By providing the wide extension portion 12aa having a large area in the direction in which the resin amount of the resin 5 is large, the expansion stress of the phosphor-containing resin 5 is also applied to the wide extension portion 12aa having a larger area than the other portions of the annular metal pattern 12a. Interfacial peeling with the sealing resin 6 occurs, and most of the expansion stress due to the phosphor-containing resin 5 is alleviated by the wide extension portion 12aa, and the generation of cracks in the sealing resin portion 6 is further ensured. It is suppressed. And although the crack which generate | occur | produces in a sealing resin part has the tendency for the interface peeling part in the interface of a metal pattern and a sealing resin part to start, by providing the wide extension part 12aa in the position far from a wire side, The crack generation rate in the vicinity of the wire can be reduced, and wire breakage can be suppressed.

  Furthermore, the crack generated in the sealing resin portion generally tends to occur starting from an interface peeling portion at the interface between the metal pattern and the sealing resin portion. Therefore, the generation of cracks is suppressed by forming the outer edge of the annular metal pattern 12a of the embodiment in a curved shape without a straight line portion.

  Moreover, the interface peeling between the annular metal pattern 12a and the sealing resin portion 6 does not affect the optical characteristics of the irradiation light of the semiconductor light emitting device and damages the semiconductor light emitting element. And the bonding wire is not broken. Therefore, the optical and mechanical reliability is not impaired.

  In this embodiment, the wide extension portion 12aa of the annular metal pattern 12a is provided only in the direction of the front side edge metal pattern 12b (the direction opposite to the wire bonding pad 12d with the concave portion 11 in between). The wire bonding pad extends in the direction, and the wide light extending portion 12aa and the wire bonding pad 12d are provided on both sides of the concave portion 11, respectively, so that the semiconductor light emitting device 3 is provided with the concave portion 11 to which the semiconductor light emitting element 3 is die bonded. This is because the semiconductor light emitting device 1 can be reduced in size while being able to be positioned at the central portion of the semiconductor device 1.

  Similarly, in this embodiment, the wide extension is not provided in the direction perpendicular to the direction connecting the wire bonding pad 12d and the wide extension 12aa of the annular metal pattern 12a so as not to hinder downsizing. .

  Next, a method for manufacturing the semiconductor light emitting device 1 having the above configuration will be described with reference to FIGS. 4 to 6 and 12 are top views, and FIGS. 7 to 11 are cross-sectional views.

  First, in the preparation process of the upper substrate 10 (FIG. 4A) and the lower substrate 20 (FIG. 4B) in FIG. 4, the front side metal layer 15 was formed on the entire surface of one side (front side). The same position of both substrates of the multi-piece upper substrate 10 and the multi-piece lower substrate 20 in which the front-side metal layer 25 and the back-side metal layer 26 are formed on the entire surfaces of both sides (front side and back side). In addition, a plurality of through grooves 16, 27 each having a predetermined width are arranged in parallel at predetermined intervals. For the upper substrate 10 and the lower substrate 20, for example, an insulating substrate such as a glass epoxy substrate can be used.

  Next, in the metal pattern forming process of the upper substrate 10 (FIG. 5A) and the lower substrate 20 (FIG. 5B) of FIG. 5, unnecessary portions of the front metal layer 15 of the upper substrate 10 are removed by etching. Then, the desired front side metal pattern 12 is formed, and similarly, unnecessary portions of the front side metal layer 25 and the back side metal layer 26 of the lower substrate 20 are removed by etching, and the desired front side metal pattern 21 and the back side metal pattern are formed. 22 is formed.

  At this time, the front-side metal pattern 12 of the upper substrate 10 has a plurality of substantially elliptical central metal patterns 17 that later become the annular metal patterns 12a at predetermined intervals in the center of the region sandwiched between the adjacent through grooves 16. Separately and independently, it is formed in a straight line shape, and is formed in a state where the following front side edge metal patterns 12b and 12c are connected to both sides thereof. Further, a wire bonding pad 12d extending toward the center metal pattern 17 is extended from the front side edge metal pattern 12c.

  The center of the substantially elliptical central metal pattern 17 is located closer to the front edge metal pattern 12 b than the intermediate position between the opposing through grooves 16.

  On the other hand, a plurality of front side metal patterns 21 of the lower substrate 20 are formed with a predetermined width and a predetermined length with a predetermined interval from one through groove 27 toward the other through hole 27 facing each other. Further, the back side metal pattern 22 of the lower substrate 20 is formed in a state in which the back side edge metal patterns 22b and 22c are connected along the through groove 27 with a predetermined width from the respective through grooves 27 facing each other. Yes.

  Next, in the through hole forming step of the upper substrate in FIG. 6, the central metal pattern 17 and the upper substrate so that each central metal pattern 17 remains in an annular shape at an intermediate position between the opposing through grooves 16 of the upper substrate 10. A through hole 11 penetrating 10 is formed.

  At this time, the center of the central metal pattern 17 is located closer to the front edge metal pattern 12 b than the center of the through hole 11. Therefore, the annular metal pattern 12a that remains in an annular shape so as to surround the upper edge of the through hole 11 is not uniform in width, and is wider toward the front edge metal pattern 12b side than the through hole 11. The shape has a wide extension portion 12aa extended in the direction of the front side edge metal pattern 12b.

  Next, in the bonding step of FIG. 7, the upper substrate 10 and the lower substrate 20 are bonded with an insulating adhesive member such as an edge adhesive or an insulating adhesive sheet so that the through grooves 16 and 27 overlap each other. A base substrate 30 having a two-layer structure including the substrates 10 and 20 and having the through grooves 32 penetrating the through grooves 16 and 27 is manufactured.

  At this time, the front-side metal pattern 21 of the lower substrate 20 is located at a position sandwiched between the upper substrate 10 and the lower substrate 20, and the through-groove located on the front-side edge metal pattern 12b side of the upper substrate 10 located above. 32 extends from the lower position of the through-hole 11 of the upper substrate 10 toward the other opposing through-hole 32, thereby forming the bottom surface of the through-hole 11.

  Next, in the plating process of FIG. 8, the inner surface of each recess (through hole) 11 of the base substrate 30 to which the upper substrate 10 and the lower substrate 20 are bonded, and the through groove 16 of the upper substrate 10 and the lower substrate 20 are penetrated. A metal pattern by electroless plating is formed on the inner surface of the through groove 32 of the base substrate 30 formed by the groove 27, and a concave metal pattern 12e and side metal patterns 31b and 31c are provided, respectively.

  As a result, the base substrate 30 is connected to the annular metal pattern 12a, the concave metal pattern 12e, the front side metal pattern 21, the front side edge metal pattern 12b, the back side edge metal pattern 22b, and the side metal pattern 31b. The metal pattern 12c, the back side edge metal pattern 22c, and the side surface metal pattern 31c are connected.

  Next, in the bonding step of FIG. 9, the semiconductor light emitting element 3 is die-bonded on the front side metal pattern 21 positioned on the bottom surface of the recess 11 via a conductive bonding member, and the lower electrode of the semiconductor light emitting element 3 and the front side metal pattern 21 are bonded. To establish electrical continuity. Thereafter, the wire bonding pad 12d extended from the front side edge metal pattern 12c and the upper electrode of the semiconductor light emitting element 3 are wire-bonded by the bonding wire 4, and the upper electrode of the semiconductor light emitting element 3 and the front side edge metal pattern 12c are formed. To ensure electrical continuity.

  Next, in the step of filling the phosphor-containing resin in FIG. 10, the phosphor-containing resin 5 formed by containing the phosphor in a light-transmitting resin such as a silicone resin is placed in the concave portion 11 so as to substantially face the upper surface of the annular metal pattern 12 a. The entire semiconductor light emitting element 3 that is filled so as to be united and die-bonded in the recess 11 is covered with the phosphor-containing resin 5.

  Next, in the resin sealing step of FIG. 11, the sealing resin portion 6 made of a light transmissive resin such as an epoxy resin is formed on the front side surface of the base substrate 30 by transfer molding or the like, and the fluorescent material filled in the recess 11 is formed. The entire surface of the body-containing resin 5, the entire annular metal pattern 12a, a part of the front side edge metal pattern 12b, and a part of the front side edge metal pattern 12c including the whole wire bonding pad 12d are covered.

  At this time, the sealing resin portion 6 is formed with a convex lens portion 6 a above each concave portion 11, thereby performing optical path control of light emitted from the semiconductor light emitting element 3 and passing through the phosphor-containing resin 5. Thus, a desired light distribution characteristic is obtained.

  Finally, in the dicing process of FIG. 12, the base substrate 30 and the sealing resin portion 6 are collectively cut along dicing lines 33 with a predetermined interval, and separated into a plurality of semiconductor light emitting devices 1. Thereby, the manufacturing process of the semiconductor light emitting device is completed, and the desired semiconductor light emitting device 1 is completed.

  In the above-described embodiment, the semiconductor light emitting element has a substantially square shape. However, the semiconductor light emitting element is not necessarily limited to a square depending on the purpose, application, or the like. For example, a rectangular shape may be considered.

  In this case, the optimum shape of the annular metal pattern 12a that can effectively suppress cracks in the sealing resin portion 6 even in a high-temperature atmosphere of solder melting heat in the solder reflow process at the time of board mounting is shown in FIG. It is shown in the top view explaining the form. In the embodiment shown in FIG. 13, a case where a flip chip mounting type is used as the semiconductor light emitting element 3 is shown. Therefore, it is not necessary to provide a conductive pattern for wire bonding on the front side surface of the base substrate 30.

  As described above, the formation condition of the annular metal pattern capable of effectively suppressing the crack of the sealing resin portion 6 is the phosphor-containing resin in the region sandwiched between the inner side surface of the recess 11 and each side surface of the semiconductor light emitting element 3. 5 is provided in the direction in which the amount of the resin 5 is large, the expansion stress of the phosphor-containing resin 5 is sealed in the wide extension portion 12aa having a larger area than the other portions of the annular metal pattern 12a. Interfacial peeling from the stop resin 6 occurs, and most of the expansion stress due to the phosphor-containing resin 5 is alleviated by the wide extension portion 12aa, and the generation of cracks in the sealing resin portion 6 is suppressed. become.

  When this condition is applied when the rectangular semiconductor light emitting element 3 is used, a region (A) sandwiched between the side surface on the long side of the semiconductor light emitting element 3 and the inner side surface of the recess 11 is formed on the semiconductor light emitting element 3. Compared with a region (B) sandwiched between the side surface on the short side and the inner surface of the recess 11, a region (C) sandwiched between the corner side surface of the semiconductor light emitting element 3 and the inner surface of the recess 11, etc. The body-containing resin 5 is a portion having a large amount of resin. Therefore, by forming the annular metal pattern 12a in a shape in which the wide extension portion 12aa is provided in the direction of the region (A), the expansion stress is efficiently relieved, The effect of suppressing the occurrence of cracks in the sealing resin portion 6 is high.

  Further, for example, as shown in FIG. 14 (an explanatory diagram of an annular metal pattern), the annular metal pattern 12a is formed into a substantially cross shape in which wide extending portions 12aa are provided in four directions on each side of the semiconductor light emitting element 3. it can.

  Thereby, the expansion stress due to the thermal expansion of the phosphor-containing resin 5 is relieved by the four wide extension portions 12aa, and the occurrence of cracks in the sealing resin portion 6 can be reliably suppressed.

  In the above-described embodiment, the base substrate 30 having a two-layer structure in which the upper substrate 10 and the lower substrate 20 are bonded together with an insulating adhesive member is used. However, the base substrate 30 is not necessarily limited to the two-layer structure. 15 (a (a top view for explaining another embodiment), b (a BB cross-sectional view of a)), three layers in which an intermediate substrate 40 is provided between the upper substrate 10 and the lower substrate 20 A base substrate 50 having a structure may be used. Further, a base substrate having a substantially one-layer structure can be obtained by using a metal thin plate or the like instead of the upper substrate 10 and the metal pattern 21.

  When the base substrate 50 has a three-layer structure, the base substrate 50 has a concave portion 45 including a through portion 45a that penetrates the upper substrate 10 and the intermediate substrate 40 and a through portion 45b that penetrates only the upper substrate 10, and a bottom surface of the through portion 45a is formed. The bottom metal pattern 21 of the lower substrate 20 is formed, and the bottom surface of the through portion 45 b is formed of the front metal pattern 41 of the intermediate substrate 40. Then, the semiconductor light emitting element 3 is die-bonded on the front side metal pattern 21 of the lower substrate 20 via a conductive bonding member, and one end portion is used as an electrode of the semiconductor light emitting element 3 on the front side metal pattern 41 of the intermediate substrate 40. The other end of the connected bonding wire 4 is wire-bonded.

  Then, the phosphor-containing resin 5 is filled in the concave portion 45, the sealing resin portion 6 made of a light transmitting resin is formed on the front side surface of the base substrate 50, and the phosphor-containing resin 5 filled in the concave portion 45. The entire surface, the entire annular metal pattern 12a, and a part of each of the front edge metal patterns 12b and 12c are covered in the same manner as in the above embodiment.

  The direction in which the wide extension portion 21aa of the annular metal pattern 12a is provided is also provided toward the side opposite to the side where the bonding wire 4 is wired with respect to the concave portion 45, as in the above embodiment. The relaxation effect of the expansion stress by the wide extension 21aa is the same as in the embodiment.

  In this case, at least the front side edge metal pattern 12b of the upper substrate 10, the front side metal pattern 21 of the lower substrate 20, and the back side edge metal pattern 22b of the lower substrate 20 are connected via the side metal pattern 51b. Then, the front side edge metal pattern 12c of the upper substrate 10, the front side metal pattern 41 of the intermediate substrate 40, and the back side edge metal pattern 22c of the lower substrate 20 are connected via the side metal pattern 51c.

  However, a metal pattern is not provided on the inner side surface of the recess 45, and the annular metal pattern 12 a is formed separately and independently on the front side surface of the base substrate 50. Even in this state, the effect of alleviating the expansion stress by the annular metal pattern 12a having the wide extension 21aa can be reliably ensured.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor light-emitting device 3 ... Semiconductor light-emitting element 4 ... Bonding wire 5 ... Phosphor containing resin 6 ... Sealing resin part 6a ... Lens part 10 ... Upper substrate 11 ... Through-hole (concave part)
DESCRIPTION OF SYMBOLS 12 ... Front side metal pattern 12a ... Ring metal pattern 12aa ... Wide extension part 12b ... Front side edge metal pattern 12c ... Front side edge metal pattern 12d ... Wire bonding pad 12e ... Concave metal pattern 15 ... Front side metal layer 16 ... Through groove 17 ... Center metal pattern 20 ... Lower substrate 21 ... Front side metal pattern 22 ... Back side metal pattern 22b ... Back side edge metal pattern 22c ... Back side edge metal pattern 25 ... Front side metal layer 26 ... Back side metal layer 27 ... Through groove 30 ... Base substrate 31b Side metal pattern 31c Side metal pattern 32 ... Through groove 33 ... Dicing line 40 ... Intermediate substrate 41 ... Front side metal pattern 45 ... Recess 45a ... Through portion 45b ... Through portion 50 ... Base substrate 51b ... Side metal pattern 51c ... Side metal pattern

Claims (6)

A mounting board;
An upper substrate having a through hole disposed on the mounting substrate;
A semiconductor light emitting device die-bonded on the mounting substrate in the through hole;
A first resin filled in the through hole;
A second resin covering the first resin and the upper surface of the upper substrate;
The upper substrate has a conductive pattern formed on the upper surface from the upper edge of the through hole or near the upper edge toward the outside of the through hole,
The first resin is in contact with the conductive pattern,
The semiconductor light-emitting device, wherein the conductive pattern is entirely covered with the second resin.   The semiconductor light emitting device according to claim 1, wherein the first resin has a thermal expansion coefficient larger than that of the second resin.   The semiconductor light-emitting device according to claim 1, wherein the first resin contains a wavelength conversion member.   The semiconductor light-emitting device according to claim 1, wherein the conductive pattern is formed in an annular shape so as to surround an upper edge of the through hole.   The semiconductor light emitting device according to claim 1, wherein an outer edge of the conductive pattern is formed in a curved shape. The upper substrate has a power receiving pattern formed on the upper surface so as to be separated from the conductive pattern;
A conductive wire connecting the electrode of the semiconductor light emitting element and the power receiving pattern;
The conductive pattern is a direction in which the amount of the first resin is large in a region sandwiched between an inner side surface of the through hole and each side surface of the semiconductor light emitting element, and a direction in which the conductive wire is wired The width from the upper edge or the vicinity of the upper edge to the outer edge of the through hole in at least one of the other directions is wider than the other part. The semiconductor light-emitting device as described.

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