JP2015151572A - 鉄酸化物薄膜およびその製造方法 - Google Patents
鉄酸化物薄膜およびその製造方法 Download PDFInfo
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- JP2015151572A JP2015151572A JP2014025533A JP2014025533A JP2015151572A JP 2015151572 A JP2015151572 A JP 2015151572A JP 2014025533 A JP2014025533 A JP 2014025533A JP 2014025533 A JP2014025533 A JP 2014025533A JP 2015151572 A JP2015151572 A JP 2015151572A
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- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title abstract description 21
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000010408 film Substances 0.000 claims abstract description 29
- 239000011019 hematite Substances 0.000 claims abstract description 19
- 229910052595 hematite Inorganic materials 0.000 claims abstract description 19
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 25
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- 229910001566 austenite Inorganic materials 0.000 claims description 4
- 229910000859 α-Fe Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 18
- 235000013980 iron oxide Nutrition 0.000 description 54
- 238000010438 heat treatment Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 14
- 230000007704 transition Effects 0.000 description 14
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 13
- 230000015654 memory Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 239000011029 spinel Substances 0.000 description 6
- 229910052596 spinel Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 235000014692 zinc oxide Nutrition 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
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- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
従来、鉄酸化物薄膜の作製には、ターゲットとして鉄酸化物焼結体またはFeが用いられる。鉄酸化物焼結体ターゲットの製造では、比較的高温に保持して粉末を固体化させることから、約400℃で不可逆的にヘマタイトに相転移するマグへマイトの焼結体ターゲットは存在しない。また、Feターゲットを用いる場合、成膜雰囲気中の酸素含有濃度を変化させることにより各鉄酸化物相が作製される。しかし、単に酸素含有濃度の変化のみではマグへマイトは形成されず、安定相であるマグネタイトから、同様に安定相であるヘマタイトに相転移する。したがって、単純にスパッタリングしただけでは、主にマグヘマイト結晶相からなる薄膜を成膜することは困難である。
(ただし、60≦x+y≦66、0<x≦15、51≦y≦60であり、各数字は原子比率を示す)で表され、成膜状態における構造が主にマグへマイト(γ-Fe2O3)結晶相であることを特徴とする鉄酸化物薄膜を提供する。
本発明の鉄酸化物薄膜は、一般式Fe100−x−yMgxOy(ただし、60≦x+y≦66、0<x≦15、51≦y≦60であり、各数字は原子比率(at.%)を示す)で表され、成膜状態における構造が主にマグへマイト(γ-Fe2O3)結晶相である。
Claims (2)
- 一般式Fe100−x−yMgxOy
(ただし、60≦x+y≦66、0<x≦15、51≦y≦60であり、各数字は原子比率を示す)で表され、成膜状態における構造が主にマグへマイト(γ-Fe2O3)結晶相であることを特徴とする鉄酸化物薄膜。 - ターゲットとして、ヘマタイト(α-Fe2O3)ターゲット上にMgのチップを配置した複合ターゲットを用いて、スパッタリング法により、基板上に請求項1に記載の鉄酸化物薄膜を成膜することを特徴とする鉄酸化物薄膜の製造方法。
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Cited By (3)
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JP2018104784A (ja) * | 2016-12-27 | 2018-07-05 | 公益財団法人電磁材料研究所 | 鉄酸化物薄膜およびその製造方法 |
JP2020019683A (ja) * | 2018-08-01 | 2020-02-06 | 公益財団法人電磁材料研究所 | pn接合素子用の複合鉄酸化物薄膜および光触媒活性物質用の複合鉄酸化物薄膜 |
JP2020023426A (ja) * | 2018-08-01 | 2020-02-13 | 公益財団法人電磁材料研究所 | 複合鉄酸化物焼結体および複合鉄酸化物粉末ならびにこれらの製造方法 |
Citations (3)
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JPS5262094A (en) * | 1975-11-17 | 1977-05-23 | Matsushita Electric Ind Co Ltd | Inflammable gas detecting element |
JP2008091602A (ja) * | 2006-10-02 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 抵抗変化型メモリ素子材料の製造方法 |
JP2013034655A (ja) * | 2011-08-08 | 2013-02-21 | Univ Of Tsukuba | 新規な癌焼灼治療用強磁性酸化鉄粒子 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5262094A (en) * | 1975-11-17 | 1977-05-23 | Matsushita Electric Ind Co Ltd | Inflammable gas detecting element |
JP2008091602A (ja) * | 2006-10-02 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 抵抗変化型メモリ素子材料の製造方法 |
JP2013034655A (ja) * | 2011-08-08 | 2013-02-21 | Univ Of Tsukuba | 新規な癌焼灼治療用強磁性酸化鉄粒子 |
Non-Patent Citations (1)
Title |
---|
Y.GAO, ET AL.: "Growth, structure, and magnetic properties of γ-Fe2O3 epitaxial films on MgO", JOURNAL OF APPLIED PHYSICS, vol. 81, no. 7, JPN6017037082, 1997, pages 3253 - 3256, ISSN: 0003650167 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018104784A (ja) * | 2016-12-27 | 2018-07-05 | 公益財団法人電磁材料研究所 | 鉄酸化物薄膜およびその製造方法 |
JP2020019683A (ja) * | 2018-08-01 | 2020-02-06 | 公益財団法人電磁材料研究所 | pn接合素子用の複合鉄酸化物薄膜および光触媒活性物質用の複合鉄酸化物薄膜 |
JP2020023426A (ja) * | 2018-08-01 | 2020-02-13 | 公益財団法人電磁材料研究所 | 複合鉄酸化物焼結体および複合鉄酸化物粉末ならびにこれらの製造方法 |
JP2020023744A (ja) * | 2018-08-01 | 2020-02-13 | 公益財団法人電磁材料研究所 | 複合鉄酸化物薄膜およびその製造方法 |
JP7049958B2 (ja) | 2018-08-01 | 2022-04-07 | 公益財団法人電磁材料研究所 | pn接合素子用の複合鉄酸化物薄膜および光触媒活性物質用の複合鉄酸化物薄膜 |
JP7153555B2 (ja) | 2018-08-01 | 2022-10-14 | 公益財団法人電磁材料研究所 | 複合鉄酸化物薄膜およびその製造方法 |
JP7391505B2 (ja) | 2018-08-01 | 2023-12-05 | 公益財団法人電磁材料研究所 | 複合鉄酸化物焼結体および複合鉄酸化物粉末ならびにこれらの製造方法 |
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