JP2015146332A5 - - Google Patents
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- Publication number
- JP2015146332A5 JP2015146332A5 JP2014017619A JP2014017619A JP2015146332A5 JP 2015146332 A5 JP2015146332 A5 JP 2015146332A5 JP 2014017619 A JP2014017619 A JP 2014017619A JP 2014017619 A JP2014017619 A JP 2014017619A JP 2015146332 A5 JP2015146332 A5 JP 2015146332A5
- Authority
- JP
- Japan
- Prior art keywords
- development
- oxide semiconductor
- developer
- thin film
- developing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910000318 alkali metal phosphate Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014017619A JP6237279B2 (ja) | 2014-01-31 | 2014-01-31 | 保護膜を具備する薄膜トランジスタ基板およびその製造方法 |
| CN201510046590.6A CN104821337B (zh) | 2014-01-31 | 2015-01-29 | 具备保护膜的薄膜晶体管基板及其制造方法 |
| TW104102947A TWI626511B (zh) | 2014-01-31 | 2015-01-29 | 具備保護膜之薄膜電晶體基板的製造方法 |
| KR1020150015443A KR102302306B1 (ko) | 2014-01-31 | 2015-01-30 | 보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014017619A JP6237279B2 (ja) | 2014-01-31 | 2014-01-31 | 保護膜を具備する薄膜トランジスタ基板およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015146332A JP2015146332A (ja) | 2015-08-13 |
| JP2015146332A5 true JP2015146332A5 (enExample) | 2016-11-24 |
| JP6237279B2 JP6237279B2 (ja) | 2017-11-29 |
Family
ID=53731582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014017619A Active JP6237279B2 (ja) | 2014-01-31 | 2014-01-31 | 保護膜を具備する薄膜トランジスタ基板およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6237279B2 (enExample) |
| KR (1) | KR102302306B1 (enExample) |
| CN (1) | CN104821337B (enExample) |
| TW (1) | TWI626511B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| KR101862710B1 (ko) * | 2015-10-30 | 2018-05-30 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자 |
| TW201723096A (zh) * | 2015-12-31 | 2017-07-01 | 奇美實業股份有限公司 | 感光性樹脂組成物及其應用 |
| WO2017200201A1 (en) * | 2016-05-19 | 2017-11-23 | Rohm And Haas Electronic Materials Korea Ltd. | Photosensitive resin composition and cured film prepared therefrom |
| KR102310794B1 (ko) * | 2016-05-19 | 2021-10-12 | 롬엔드하스전자재료코리아유한회사 | 감광성 수지 조성물 및 이로부터 제조된 경화막 |
| JP6852296B2 (ja) * | 2016-07-19 | 2021-03-31 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
| US10916661B2 (en) | 2016-11-28 | 2021-02-09 | Merck Patent Gmbh | Thin film transistor substrate provided with protective film and method for producing same |
| KR102028642B1 (ko) * | 2016-12-19 | 2019-10-04 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 전자 장치 |
| WO2021034567A1 (en) * | 2019-08-16 | 2021-02-25 | Tokyo Electron Limited | Method and process for stochastic driven defectivity healing |
| US20240160105A1 (en) * | 2021-01-21 | 2024-05-16 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin composition, photosensitive resin film, photosensitive dry film, and pattern formation method |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006236839A (ja) * | 2005-02-25 | 2006-09-07 | Mitsubishi Electric Corp | 有機電界発光型表示装置 |
| US9464172B2 (en) * | 2007-12-10 | 2016-10-11 | Kaneka Corporation | Alkali-developable curable composition, insulating thin film using the same, and thin film transistor |
| WO2011077978A1 (en) * | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8883397B2 (en) * | 2010-08-24 | 2014-11-11 | Az Electronic Materials Usa Corp. | Positive photosensitive siloxane composition |
| KR101333404B1 (ko) * | 2011-03-11 | 2013-11-28 | 샤프 가부시키가이샤 | 박막 트랜지스터 및 그 제조 방법, 및 표시 장치 |
| JP2012235104A (ja) | 2011-04-22 | 2012-11-29 | Kobe Steel Ltd | 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置 |
| KR101902164B1 (ko) * | 2011-05-20 | 2018-10-01 | 메르크 파텐트 게엠베하 | 포지티브형 감광성 실록산 조성물 |
| KR20130042867A (ko) * | 2011-10-19 | 2013-04-29 | 삼성디스플레이 주식회사 | 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법 |
| KR20130133289A (ko) * | 2012-01-20 | 2013-12-06 | 파나소닉 주식회사 | 박막 트랜지스터 |
| JP5965696B2 (ja) | 2012-03-29 | 2016-08-10 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP6175740B2 (ja) | 2012-03-30 | 2017-08-09 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタおよびその製造方法並びに表示装置および電子機器 |
| TWI567497B (zh) * | 2012-04-06 | 2017-01-21 | Ａｚ電子材料盧森堡有限公司 | 負型感光性矽氧烷組成物 |
| JP6306278B2 (ja) * | 2012-04-09 | 2018-04-04 | Jsr株式会社 | 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子 |
-
2014
- 2014-01-31 JP JP2014017619A patent/JP6237279B2/ja active Active
-
2015
- 2015-01-29 CN CN201510046590.6A patent/CN104821337B/zh active Active
- 2015-01-29 TW TW104102947A patent/TWI626511B/zh active
- 2015-01-30 KR KR1020150015443A patent/KR102302306B1/ko active Active
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