JP6237279B2 - 保護膜を具備する薄膜トランジスタ基板およびその製造方法 - Google Patents

保護膜を具備する薄膜トランジスタ基板およびその製造方法 Download PDF

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Publication number
JP6237279B2
JP6237279B2 JP2014017619A JP2014017619A JP6237279B2 JP 6237279 B2 JP6237279 B2 JP 6237279B2 JP 2014017619 A JP2014017619 A JP 2014017619A JP 2014017619 A JP2014017619 A JP 2014017619A JP 6237279 B2 JP6237279 B2 JP 6237279B2
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Japan
Prior art keywords
protective film
thin film
film transistor
polysiloxane
siloxane composition
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JP2014017619A
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English (en)
Japanese (ja)
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JP2015146332A (ja
JP2015146332A5 (enExample
Inventor
河 泰 明 石
河 泰 明 石
岡 行 治 浦
岡 行 治 浦
中 敏 章 野
中 敏 章 野
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Nara Institute of Science and Technology NUC
AZ Electronic Materials Luxembourg SARL
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Nara Institute of Science and Technology NUC
AZ Electronic Materials Luxembourg SARL
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Application filed by Nara Institute of Science and Technology NUC, AZ Electronic Materials Luxembourg SARL filed Critical Nara Institute of Science and Technology NUC
Priority to JP2014017619A priority Critical patent/JP6237279B2/ja
Priority to TW104102947A priority patent/TWI626511B/zh
Priority to CN201510046590.6A priority patent/CN104821337B/zh
Priority to KR1020150015443A priority patent/KR102302306B1/ko
Publication of JP2015146332A publication Critical patent/JP2015146332A/ja
Publication of JP2015146332A5 publication Critical patent/JP2015146332A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0715—Polysiloxane

Landscapes

  • Thin Film Transistor (AREA)
  • Engineering & Computer Science (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2014017619A 2014-01-31 2014-01-31 保護膜を具備する薄膜トランジスタ基板およびその製造方法 Active JP6237279B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014017619A JP6237279B2 (ja) 2014-01-31 2014-01-31 保護膜を具備する薄膜トランジスタ基板およびその製造方法
TW104102947A TWI626511B (zh) 2014-01-31 2015-01-29 具備保護膜之薄膜電晶體基板的製造方法
CN201510046590.6A CN104821337B (zh) 2014-01-31 2015-01-29 具备保护膜的薄膜晶体管基板及其制造方法
KR1020150015443A KR102302306B1 (ko) 2014-01-31 2015-01-30 보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014017619A JP6237279B2 (ja) 2014-01-31 2014-01-31 保護膜を具備する薄膜トランジスタ基板およびその製造方法

Publications (3)

Publication Number Publication Date
JP2015146332A JP2015146332A (ja) 2015-08-13
JP2015146332A5 JP2015146332A5 (enExample) 2016-11-24
JP6237279B2 true JP6237279B2 (ja) 2017-11-29

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Family Applications (1)

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JP2014017619A Active JP6237279B2 (ja) 2014-01-31 2014-01-31 保護膜を具備する薄膜トランジスタ基板およびその製造方法

Country Status (4)

Country Link
JP (1) JP6237279B2 (enExample)
KR (1) KR102302306B1 (enExample)
CN (1) CN104821337B (enExample)
TW (1) TWI626511B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR101862710B1 (ko) * 2015-10-30 2018-05-30 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
TW201723096A (zh) * 2015-12-31 2017-07-01 奇美實業股份有限公司 感光性樹脂組成物及其應用
KR102310794B1 (ko) * 2016-05-19 2021-10-12 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
WO2017200201A1 (en) * 2016-05-19 2017-11-23 Rohm And Haas Electronic Materials Korea Ltd. Photosensitive resin composition and cured film prepared therefrom
JP6852296B2 (ja) * 2016-07-19 2021-03-31 株式会社リコー 電界効果型トランジスタの製造方法
WO2018097284A1 (ja) * 2016-11-28 2018-05-31 国立大学法人 奈良先端科学技術大学院大学 保護膜を具備する薄膜トランジスタ基板およびその製造方法
KR102028642B1 (ko) * 2016-12-19 2019-10-04 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 전자 장치
WO2021034567A1 (en) * 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
KR20230135100A (ko) * 2021-01-21 2023-09-22 신에쓰 가가꾸 고교 가부시끼가이샤 감광성 수지 조성물, 감광성 수지 피막, 감광성 드라이필름 및 패턴 형성 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
WO2009075233A1 (ja) * 2007-12-10 2009-06-18 Kaneka Corporation アルカリ現像性を有する硬化性組成物およびそれを用いた絶縁性薄膜および薄膜トランジスタ
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2012026400A1 (ja) * 2010-08-24 2012-03-01 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性シロキサン組成物
KR101333404B1 (ko) * 2011-03-11 2013-11-28 샤프 가부시키가이샤 박막 트랜지스터 및 그 제조 방법, 및 표시 장치
JP2012235104A (ja) 2011-04-22 2012-11-29 Kobe Steel Ltd 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
KR101902164B1 (ko) * 2011-05-20 2018-10-01 메르크 파텐트 게엠베하 포지티브형 감광성 실록산 조성물
KR20130042867A (ko) * 2011-10-19 2013-04-29 삼성디스플레이 주식회사 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
KR20130133289A (ko) * 2012-01-20 2013-12-06 파나소닉 주식회사 박막 트랜지스터
JP5965696B2 (ja) 2012-03-29 2016-08-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP6175740B2 (ja) 2012-03-30 2017-08-09 株式会社Ｊｏｌｅｄ 薄膜トランジスタおよびその製造方法並びに表示装置および電子機器
TWI567497B (zh) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 負型感光性矽氧烷組成物
JP6306278B2 (ja) * 2012-04-09 2018-04-04 Jsr株式会社 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子

Also Published As

Publication number Publication date
JP2015146332A (ja) 2015-08-13
KR102302306B1 (ko) 2021-09-17
CN104821337B (zh) 2019-04-19
KR20150091265A (ko) 2015-08-10
CN104821337A (zh) 2015-08-05
TW201535055A (zh) 2015-09-16
TWI626511B (zh) 2018-06-11

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