JP2015142138A - Led半導体素子 - Google Patents
Led半導体素子 Download PDFInfo
- Publication number
- JP2015142138A JP2015142138A JP2015014200A JP2015014200A JP2015142138A JP 2015142138 A JP2015142138 A JP 2015142138A JP 2015014200 A JP2015014200 A JP 2015014200A JP 2015014200 A JP2015014200 A JP 2015014200A JP 2015142138 A JP2015142138 A JP 2015142138A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- leda
- semiconductor element
- led semiconductor
- man
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002019 doping agent Substances 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 238000005253 cladding Methods 0.000 claims description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000003595 spectral effect Effects 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 230000007704 transition Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- -1 GaAs compound Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】LED半導体素子(LEDA)であって、
・n型ドープの基板層(N−SUB)と、
・前記基板層の上に配置されているn型ドープの第1クラッド層(N−MAN)と、
・前記第1クラッド層の上に配置されている、発光層(AKT)を含む活性層(AKT)と、
・前記活性層の上に配置されているp型ドープの第2クラッド層(P−MAN)と、
・前記第2クラッド層の上に配置されている電流拡幅層(P−VERT)と、
・前記電流拡幅層の上に配置されているp型ドープのコンタクト層(P−KON)と
を有しているLED半導体素子(LEDA)において、
前記p型ドープのコンタクト層(P−KON)は、アルミニウム含有層から形成されており、ドーパント材料として炭素を有する、
ことを特徴とするLED半導体素子(LEDA)。
【選択図】図1
Description
Claims (12)
- LED半導体素子(LEDA)であって、
・n型ドープの基板層(N−SUB)と、
・前記基板層(N−SUB)の上に配置されているn型ドープの第1クラッド層(N−MAN)と、
・前記第1クラッド層(N−MAN)の上に配置されている、発光層(AKT)を含む活性層(AKT)と、
・前記活性層(AKT)の上に配置されているp型ドープの第2クラッド層(P−MAN)と、
・前記第2クラッド層(P−MAN)の上に配置されている電流拡幅層(P−VERT)と、
・前記電流拡幅層(P−VERT)の上に配置されているp型ドープのコンタクト層(P−KON)と
を有するLED半導体素子(LEDA)において、
前記p型ドープのコンタクト層(P−KON)は、アルミニウム含有層から形成されており、ドーパント材料として炭素を有する、
ことを特徴とするLED半導体素子(LEDA)。 - 前記コンタクト層(P−KON)のアルミニウム濃度は、前記電流拡幅層(P−VERT)のアルミニウム濃度よりも高い、
ことを特徴とする請求項1記載のLED半導体素子(LEDA)。 - 前記コンタクト層(P−KON)は、AlxGa1−xAsから形成されており、x>0.1のアルミニウム含有量を有する、
ことを特徴とする請求項1記載のLED半導体素子(LEDA)。 - 前記コンタクト層(P−KON)の炭素濃度は、2.5×1019よりも大きい、
ことを特徴とする請求項1から3のいずれか一項記載のLED半導体素子(LEDA)。 - 前記コンタクト層(P−KON)の厚さは、100nm未満である、
ことを特徴とする請求項1から4のいずれか一項記載のLED半導体素子(LEDA)。 - 前記基板層(N−SUB)の上に配置された前記各クラッド層(N−MAN,P−MAN)と、前記電流拡幅層(P−VERT)は、それぞれ1つのAlGaAs化合物を含む、
ことを特徴とする請求項1から5のいずれか一項記載のLED半導体素子(LEDA) - 前記基板層(N−SUB)は、ゲルマニウム又はヒ化ガリウムを含む、
ことを特徴とする請求項1から6のいずれか一項記載のLED半導体素子(LEDA)。 - 前記発光層は、赤外線スペクトル領域の光を放射する、
ことを特徴とする請求項1から7のいずれか一項記載のLED半導体素子(LEDA)。 - 前記発光層は、750nmから1000nmの間のスペクトル領域の光を放射する、
ことを特徴とする請求項1から8のいずれか一項記載のLED半導体素子(LEDA)。 - 前記発光層は、多重量子井戸構造を含む、
ことを特徴とする請求項1から9のいずれか一項記載のLED半導体素子(LEDA)。 - 前記多重量子井戸構造は、GaAs及び/又はAlGaAs及び/又はInGaAs及び/又はGaAsP及び/又はInGaAsP及び/又はInAlGaAs化合物を含む、
ことを特徴とする請求項10記載のLED半導体素子(LEDA)。 - 前記電流拡幅層(P−VERT)は、前記第2クラッド層(P−MAN)とは異なる化学組成を有する、
ことを特徴とする請求項1から11のいずれか一項記載のLED半導体素子(LEDA)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14000357.5A EP2903027B1 (de) | 2014-01-30 | 2014-01-30 | LED-Halbleiterbauelement |
EP14000357.5 | 2014-01-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015142138A true JP2015142138A (ja) | 2015-08-03 |
JP5889452B2 JP5889452B2 (ja) | 2016-03-22 |
Family
ID=50030049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015014200A Active JP5889452B2 (ja) | 2014-01-30 | 2015-01-28 | Led半導体素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9299886B2 (ja) |
EP (1) | EP2903027B1 (ja) |
JP (1) | JP5889452B2 (ja) |
KR (1) | KR101603473B1 (ja) |
CN (1) | CN104821353B (ja) |
TW (1) | TWI553905B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190098380A (ko) * | 2018-02-14 | 2019-08-22 | 광전자 주식회사 | 변형 보상 양자 장벽층 및 버퍼층을 포함하는 활성층을 가지는 적외선 발광 다이오드 및 그 제조 방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017101637A1 (de) * | 2017-01-27 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102017104719A1 (de) * | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper und Halbleiterchip |
CN111819703A (zh) * | 2019-11-28 | 2020-10-23 | 天津三安光电有限公司 | 一种发光元件 |
JP7402139B2 (ja) * | 2020-09-14 | 2023-12-20 | 株式会社東芝 | 半導体発光装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08204234A (ja) * | 1995-01-25 | 1996-08-09 | Mitsubishi Chem Corp | 発光ダイオード及びその製造方法 |
JPH11233815A (ja) * | 1998-02-13 | 1999-08-27 | Furukawa Electric Co Ltd:The | 半導体発光ダイオード |
JP2004207549A (ja) * | 2002-12-26 | 2004-07-22 | Hitachi Cable Ltd | 発光ダイオードの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4590501A (en) * | 1983-09-15 | 1986-05-20 | Codenoll Technology Corporation | Edge-emitting light emitting diode |
JP3216700B2 (ja) * | 1996-05-22 | 2001-10-09 | サンケン電気株式会社 | 半導体発光素子 |
JP2000101133A (ja) * | 1998-09-21 | 2000-04-07 | Hitachi Cable Ltd | 発光素子用エピタキシャルウェハ及びその製造方法 |
US7151307B2 (en) | 2001-05-08 | 2006-12-19 | The Boeing Company | Integrated semiconductor circuits on photo-active Germanium substrates |
US6869820B2 (en) | 2002-01-30 | 2005-03-22 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
DE10253160A1 (de) * | 2002-08-29 | 2004-03-11 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
JP2004281559A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体発光素子 |
JP4378239B2 (ja) * | 2004-07-29 | 2009-12-02 | 株式会社日立製作所 | 半導体装置及びそれを使用した電力変換装置並びにこの電力変換装置を用いたハイブリッド自動車。 |
US7368759B2 (en) * | 2005-09-30 | 2008-05-06 | Hitachi Cable, Ltd. | Semiconductor light-emitting device |
JP2008091789A (ja) * | 2006-10-04 | 2008-04-17 | Hitachi Cable Ltd | 発光ダイオード |
DE102007057674A1 (de) | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | LED mit Stromaufweitungsschicht |
DE102010014667A1 (de) | 2010-04-12 | 2011-10-13 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit Stromaufweitungsschicht |
CN103346224A (zh) * | 2013-06-09 | 2013-10-09 | 武汉迪源光电科技有限公司 | 一种GaN基LED的PGaN结构及其外延生长方法 |
-
2014
- 2014-01-30 EP EP14000357.5A patent/EP2903027B1/de active Active
-
2015
- 2015-01-06 KR KR1020150001211A patent/KR101603473B1/ko active IP Right Grant
- 2015-01-09 CN CN201510011692.4A patent/CN104821353B/zh active Active
- 2015-01-15 TW TW104101362A patent/TWI553905B/zh active
- 2015-01-28 JP JP2015014200A patent/JP5889452B2/ja active Active
- 2015-01-30 US US14/609,635 patent/US9299886B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08204234A (ja) * | 1995-01-25 | 1996-08-09 | Mitsubishi Chem Corp | 発光ダイオード及びその製造方法 |
JPH11233815A (ja) * | 1998-02-13 | 1999-08-27 | Furukawa Electric Co Ltd:The | 半導体発光ダイオード |
JP2004207549A (ja) * | 2002-12-26 | 2004-07-22 | Hitachi Cable Ltd | 発光ダイオードの製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190098380A (ko) * | 2018-02-14 | 2019-08-22 | 광전자 주식회사 | 변형 보상 양자 장벽층 및 버퍼층을 포함하는 활성층을 가지는 적외선 발광 다이오드 및 그 제조 방법 |
KR102018688B1 (ko) | 2018-02-14 | 2019-11-04 | 광전자 주식회사 | 변형 보상 양자 장벽층 및 버퍼층을 포함하는 활성층을 가지는 적외선 발광 다이오드 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP2903027A1 (de) | 2015-08-05 |
US9299886B2 (en) | 2016-03-29 |
EP2903027B1 (de) | 2018-08-22 |
JP5889452B2 (ja) | 2016-03-22 |
TW201539785A (zh) | 2015-10-16 |
KR101603473B1 (ko) | 2016-03-14 |
TWI553905B (zh) | 2016-10-11 |
CN104821353B (zh) | 2017-12-19 |
US20150214427A1 (en) | 2015-07-30 |
KR20150090998A (ko) | 2015-08-07 |
CN104821353A (zh) | 2015-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5889452B2 (ja) | Led半導体素子 | |
JP5404628B2 (ja) | 多重量子井戸構造を有するオプトエレクトロニクス半導体チップ | |
US9705030B2 (en) | UV LED with tunnel-injection layer | |
TWI403002B (zh) | 半導體發光元件 | |
JP2011505070A (ja) | 電流拡散層を有するled | |
US8987704B2 (en) | Semiconductor light emitting structure | |
EP2919282B1 (en) | Nitride semiconductor stacked body and semiconductor light emitting device comprising the same | |
JP2014131019A5 (ja) | ||
US20090146163A1 (en) | High brightness light emitting diode structure | |
TWI475719B (zh) | 包含異質接面之半導體發光裝置 | |
JP2018500762A (ja) | オプトエレクトロニクス部品 | |
TWI742714B (zh) | 半導體雷射二極體 | |
US10211370B2 (en) | Infrared LED | |
JP2014216598A (ja) | 半導体発光素子 | |
US9105763B2 (en) | Light emitting diode chip and manufacturing method thereof | |
JP2006108350A (ja) | 半導体発光素子 | |
JP5150099B2 (ja) | 発光半導体素子 | |
JP6200158B2 (ja) | 半導体発光素子およびその製造方法 | |
JP5205071B2 (ja) | 発光素子及び集積素子 | |
JP2006245441A (ja) | 半導体発光素子 | |
JP2013016873A (ja) | 半導体発光素子 | |
JP2013041960A (ja) | 半導体レーザ装置 | |
JP2019519923A (ja) | 半導体積層体 | |
JP2007180228A (ja) | 半導体光増幅器 | |
JP2012064634A (ja) | 半導体レーザ素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150721 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150908 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5889452 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |