CN104821353A - 发光二极管-半导体元件 - Google Patents
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000967 As alloy Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
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- 239000004411 aluminium Substances 0.000 claims description 3
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- 238000004020 luminiscence type Methods 0.000 description 1
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Abstract
一种发光二极管-半导体元件，其具有n型掺杂的衬底层、n型掺杂的第一外套层、主动层、p型掺杂的第二外套层、p型掺杂的电流扩张层、p型掺杂的接触层，其中，所述外套层设置在所述衬底层上，其中，所述主动层包括发光层并且设置在所述第一外套层上，其中，所述第二外套层设置在所述主动层上，其中，所述电流扩张层设置在所述第二外套层上，其中，所述p型掺杂的接触层设置在所述电流扩张层上，其中，所述p型掺杂的接触层由含铝层组成并且具有碳作为掺杂物。
Description
技术领域
本发明涉及一种根据权利要求书1的前序部分的发光二极管-半导体元件。
背景技术
由DE 102007057674A1、DE 10211531B4、US 8330174B2、US 7151307已知发光二极管-半导体元件。此外，由Y,Yu等人所著的《Vaccum69(2003)，489-493》、由M.D’Hondt等人所著的《Journal of Crystal 195，(1998)，655-639》和由H.Jifang等人所著的《Journal of Semiconductor 2011，32(4)》已知另外的发光二极管结构。
在该背景下本发明的任务在于，说明一种扩展现有技术的装置。
发明内容
所述任务通过具有权利要求书1的特征的发光二极管-半导体元件解决。本发明的有利的构型是从属权利要求的主题。
根据本发明的主题，提供一种发光二极管-半导体元件，其具有n型掺杂的衬底层、n型掺杂的第一外套层、主动层、p型掺杂的第二外套层、p型掺杂的电流扩张层、p型掺杂的接触层，其中，所述外套层设置在所述衬底层上，其中，所述主动层包括发光层并且设置在所述第一外套层上，其中，所述第二外套层设置在所述主动层上，其中，所述电流扩张层设置在所述第二外套层上，其中，所述p型掺杂的接触层设置在所述电流扩张层上，其中，所述p型掺杂的接触层由含铝层组成并且具有碳作为掺杂物。显然，对于商业上通用的发光二极管，所述层状结构通常封装并且设有电连接端。此外应注意，以令人惊讶的方式通过提高最上层的铝含量也可以增加碳掺杂并且在此改善元件特性。
按照本发明的装置的一个优点是，通过按照本发明的构型提高发光效率并且降低发光二极管的正向电压。由此提高效率并且简化制造。此外，降低了制造成本。
在一种扩展方案中，在接触层中铝浓度比在所述电流扩张层中更大地构造。接触层优选由AlxGa1-xAs组成并在此具有x>0.1的铝含量。
在一种实施方式中，接触层的碳浓度大于2.5x1019。研究表明，接触层的厚度小于100nm是足够的。特别有利地，当设置在衬底层上的外套层和所述电流扩张层分别包括AlGaAs化合物时，能够使用按照本发明的构型。特别有利的是，衬底层包括锗或GaAs或者由锗或GaAs组成。显然，分别对衬底层进行掺杂。衬底层优选n型掺杂。
在一种扩展方案中，发光层如此构造，使得该层发出在红外光谱范围内的光。该层优选发出在750nm和1000nm之间的光谱范围内的光。研究表明，特别有利的是，发光层包括多量子阱结构。多量子阱结构尤其包括来自GaAs和/或AlGaAs和/或InGaAs和/或GaAsP和/或InGaAsP和/或InAlGaAs的化合物。此外应注意，电流扩张层具有和第二外套层不同的化学组成。这两层绝不能构造为唯一的均质层。电流扩张层优选还具有和第二外套层不同的层厚度。
附图说明
以下参考附图进一步地阐述本发明。在此，相似的部分用相同的符号标记。示出的实施方式是高度地示意化，也就是说距离和横向延伸及垂直延伸不是按照比例的，并且相互也不具有可推导的几何关系，除非另有说明。附图示出：
图1：层状结构的横截面，
图2：图1中示出的层状结构的最上面两层中的铝浓度的变化曲线。
图3：图1中示出的层状结构的最上面两层中的掺杂物浓度的变化曲线。
具体实施方式
图1的描绘示出具有n型掺杂衬底层N-SUB的发光二极管-半导体元件LEDA的层状结构的横截面，其中，衬底层N-SUB包括锗或砷化镓的化合物。在n型掺杂衬底层N-SUB上构造有n型掺杂外套层N-MAN，其中，外套层N-MAN尤其材料锁合地设置在衬底层N-SUB上。在外套层N-MAN上构造有主动层AKT，其中，主动层包括发光层并且优选材料锁合地设置在第一外套层N-MAN。发光层包括未示出的多量子阱结构。在主动层AKT上构造有p型掺杂的第二外套层p-MAN，其中，第二外套层P-MAN和主动层AKT材料锁合连接。在第二外套层P-MAN上是p型掺杂的电流扩张层P-VERT，其中，电流扩张层P-VERT和第二外套层P-MAN材料锁合连接。在电流扩张层P-VERT上设置有p型掺杂的接触层P-KON，其中，p型掺杂的接触层P-KON和电流扩张层P-VERT材料锁合连接。在此，p型掺杂的接触层P-KON由含铝层组成并且具有碳作为掺杂物。
在图2中列出在最上面两层——也即在图1中示出的层状结构的接触层P-KON和电流扩张层P-VERT——中的铝浓度AN的示例性变化曲线。以下仅仅阐述与图1的描绘的区别。根据现有技术的铝浓度AN的变化曲线用点式曲线AL0示例性地再现。示出，铝浓度AN从在电流扩张层P-VERT中的15％的浓度出发迅速下降到指示极限(Nachweisgrenze)之下。为清楚起见，指示极限用0％示出。与此相对，根据虚线曲线AL1在按照本发明的接触层P-KON中铝浓度AN上升到在15％之上的值上。在另一示出的实施方式中，根据实线曲线AL2在接触层P-KON中铝浓度AN比在曲线AL1中还更强烈地上升。
在图3的描绘中列出最上面两层——也就是在图1中示出的层状结构的接触层P-KON和电流扩张层P-VERT——中的掺杂物浓度CN的示例性的变化曲线。以下仅仅阐述与图1和图2的描绘的区别。在点式变化曲线中针对曲线AL0示例性地再现根据现有技术的掺杂物浓度CN。示出，掺杂物浓度CN从在电流扩张层P-VERT中的约1018N/cm3迅速上升到在近1019N/cm3之上的值上。与此相对，根据虚线曲线AL1在按照本发明的接触层P-KON中掺杂物浓度CN上升到在现有技术的值之上的值上，其中，优选地达到约5x1019N/cm3的值。在另一个示出的实施方式中，根据实线曲线AL2在接触层P-KON中的掺杂物浓度CN比在曲线AL1中更强烈地上升，其中，优选地达到至约2x1020N/cm3的值。应注意，在此与现有技术不同，没有用Zn而是用C，也就是碳，作为掺杂物。
Claims (10)
1.一种发光二极管-半导体元件(LEDA)，其具有：
n型掺杂的衬底层(N-SUB)，
n型掺杂的第一外套层(N-MAN)，其中，所述外套层(N-MAN)设置在所述衬底层(SUB)上，
主动层(AKT)，其中，所述主动层(AKT)包括发光层(AKT)并且设置在所述第一外套层(N-MAN)上，
p型掺杂的第二外套层(P-MAN)，其中，所述第二外套层(P-MAN)设置在所述主动层上，
p型掺杂的电流扩张层，其中，所述电流扩张层(P-VERT)设置在所述第二外套层(P-MAN)上，
p型掺杂的接触层(P-KON)，其中，所述p型掺杂的接触层(P-KON)设置在所述电流扩张层(P-VERT)上，
所述p型掺杂的接触层(P-KON)由含铝层组成并且具有碳作为掺杂物，
其特征在于，在所述接触层(P-KON)中铝浓度比在所述电流扩张层(P-VERT)中更大，并且设置在所述衬底层(SUB)上的外套层(N-MAN，P-MAN)和所述电流扩张层(P-VERT)分别包括AlGaAs化合物。
2.根据权利要求1所述的发光二极管-半导体元件(LEDA)，其特征在于，所述接触层(P-KON)由AlxGa1-xAs组成并且具有x>0.1的铝含量。
3.根据以上权利要求中任一项所述的发光二极管-半导体元件(LEDA)，其特征在于，所述接触层(P-KON)中的碳浓度大于2.5x1019。
4.根据以上权利要求中任一项所述的发光二极管-半导体元件(LEDA)，其特征在于，所述接触层(P-KON)的厚度小于100nm。
5.根据以上权利要求中任一项所述的发光二极管-半导体元件(LEDA)，其特征在于，所述衬底层(SUB)包括锗或砷化镓。
6.根据以上权利要求中任一项所述的发光二极管-半导体元件(LEDA)，其特征在于，所述发光层发出在红外光谱范围内的光。
7.根据以上权利要求中任一项所述的发光二极管-半导体元件(LEDA)，其特征在于，所述发光层发出在750nm和1000nm之间的光谱范围内的光。
8.根据以上权利要求中任一项所述的发光二极管-半导体元件(LEDA)，其特征在于，所述发光层包括多量子阱结构。
9.根据权利要求8所述的发光二极管-半导体元件(LEDA)，其特征在于，所述多量子阱结构包括GaAs和/或AlGaAs和/或InGaAs和/或GaAsP和/或InGaAsP和/或InAlGaAs化合物。
10.根据以上权利要求中任一项所述的发光二极管-半导体元件(LEDA)，其特征在于，所述电流扩张层具有和所述第二外套层(P-MAN)不同的化学组成。
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| EP14000357.5 | 2014-01-30 | ||
| EP14000357.5A EP2903027B1 (de) | 2014-01-30 | 2014-01-30 | LED-Halbleiterbauelement |
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| CN111819703A (zh) * | 2019-11-28 | 2020-10-23 | 天津三安光电有限公司 | 一种发光元件 |
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| DE102017101637A1 (de) | 2017-01-27 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102017104719A1 (de) | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper und Halbleiterchip |
| KR102018688B1 (ko) * | 2018-02-14 | 2019-11-04 | 광전자 주식회사 | 변형 보상 양자 장벽층 및 버퍼층을 포함하는 활성층을 가지는 적외선 발광 다이오드 및 그 제조 방법 |
| JP7402139B2 (ja) * | 2020-09-14 | 2023-12-20 | 株式会社東芝 | 半導体発光装置 |
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- 2015-01-09 CN CN201510011692.4A patent/CN104821353B/zh active Active
- 2015-01-15 TW TW104101362A patent/TWI553905B/zh active
- 2015-01-28 JP JP2015014200A patent/JP5889452B2/ja active Active
- 2015-01-30 US US14/609,635 patent/US9299886B2/en active Active
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| US20040227142A1 (en) * | 2003-03-13 | 2004-11-18 | Kabushiki Kaisha Toshiba | Light-emitting semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111819703A (zh) * | 2019-11-28 | 2020-10-23 | 天津三安光电有限公司 | 一种发光元件 |
| WO2021102834A1 (zh) * | 2019-11-28 | 2021-06-03 | 天津三安光电有限公司 | 一种发光元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150214427A1 (en) | 2015-07-30 |
| JP5889452B2 (ja) | 2016-03-22 |
| EP2903027B1 (de) | 2018-08-22 |
| KR101603473B1 (ko) | 2016-03-14 |
| EP2903027A1 (de) | 2015-08-05 |
| TW201539785A (zh) | 2015-10-16 |
| JP2015142138A (ja) | 2015-08-03 |
| KR20150090998A (ko) | 2015-08-07 |
| TWI553905B (zh) | 2016-10-11 |
| CN104821353B (zh) | 2017-12-19 |
| US9299886B2 (en) | 2016-03-29 |
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