JP2015134904A - 化学種発生向上化合物 - Google Patents
化学種発生向上化合物 Download PDFInfo
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- JP2015134904A JP2015134904A JP2014233141A JP2014233141A JP2015134904A JP 2015134904 A JP2015134904 A JP 2015134904A JP 2014233141 A JP2014233141 A JP 2014233141A JP 2014233141 A JP2014233141 A JP 2014233141A JP 2015134904 A JP2015134904 A JP 2015134904A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 98
- 239000013626 chemical specie Substances 0.000 title claims abstract description 39
- 230000002708 enhancing effect Effects 0.000 title 1
- 239000000203 mixture Substances 0.000 claims abstract description 90
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 72
- 239000002245 particle Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 93
- 239000000126 substance Substances 0.000 claims description 60
- 239000011248 coating agent Substances 0.000 claims description 47
- 238000000576 coating method Methods 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 36
- 239000011229 interlayer Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000003993 interaction Effects 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 2
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 1
- 239000002253 acid Substances 0.000 abstract description 20
- 239000003504 photosensitizing agent Substances 0.000 abstract description 18
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 44
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 39
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 33
- 239000000243 solution Substances 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 28
- 238000003786 synthesis reaction Methods 0.000 description 28
- 238000011156 evaluation Methods 0.000 description 27
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 22
- 239000002243 precursor Substances 0.000 description 20
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 229940125904 compound 1 Drugs 0.000 description 15
- -1 trifluoromethylsulfonyloxyimino Chemical group 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 229940125782 compound 2 Drugs 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 230000008033 biological extinction Effects 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- 238000002835 absorbance Methods 0.000 description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 229920001577 copolymer Polymers 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 239000012044 organic layer Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 150000002923 oximes Chemical class 0.000 description 5
- 238000010992 reflux Methods 0.000 description 5
- 238000010898 silica gel chromatography Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000013076 target substance Substances 0.000 description 5
- KPZWHZSIXZXDMW-UHFFFAOYSA-N 1-(2,4,6-trimethoxyphenyl)ethanone Chemical compound COC1=CC(OC)=C(C(C)=O)C(OC)=C1 KPZWHZSIXZXDMW-UHFFFAOYSA-N 0.000 description 4
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- VCQGTWCSSRJIIP-UHFFFAOYSA-N COc1cc(OC)c(C(C)=CCO)c(OC)c1 Chemical compound COc1cc(OC)c(C(C)=CCO)c(OC)c1 VCQGTWCSSRJIIP-UHFFFAOYSA-N 0.000 description 4
- JZBYKIJNGHXTKL-UHFFFAOYSA-N COc1ccc(c(OC)c1)C(OC)(OC)c1ccc(OC)cc1OC Chemical compound COc1ccc(c(OC)c1)C(OC)(OC)c1ccc(OC)cc1OC JZBYKIJNGHXTKL-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- QGPPRNDMALFDHJ-UHFFFAOYSA-N bis(2,4-dimethoxyphenyl)methanone Chemical compound COC1=CC(OC)=CC=C1C(=O)C1=CC=C(OC)C=C1OC QGPPRNDMALFDHJ-UHFFFAOYSA-N 0.000 description 4
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 4
- 238000010511 deprotection reaction Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- QSUJHKWXLIQKEY-UHFFFAOYSA-N (2-oxooxolan-3-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCOC1=O QSUJHKWXLIQKEY-UHFFFAOYSA-N 0.000 description 3
- JGTNAGYHADQMCM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-M 0.000 description 3
- CZJVBHWJFDFPSW-UHFFFAOYSA-N 2-[(3-hydroxy-1-adamantyl)methyl]prop-2-enoic acid Chemical compound C1C(C2)CC3CC2(O)CC1(CC(=C)C(=O)O)C3 CZJVBHWJFDFPSW-UHFFFAOYSA-N 0.000 description 3
- WGZHXSVUUFPPIP-UHFFFAOYSA-N 3-(2,4,6-trimethoxyphenyl)but-2-enyl 2-methylprop-2-enoate Chemical compound COC1=C(C(=CC(=C1)OC)OC)C(=CCOC(C(=C)C)=O)C WGZHXSVUUFPPIP-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- CUELLYFAYBGQNX-UHFFFAOYSA-N COC1=CC(OC)=C(C=C1)C1(OCCO1)C1=CC=C(OCCOC(=O)C(C)=C)C=C1 Chemical compound COC1=CC(OC)=C(C=C1)C1(OCCO1)C1=CC=C(OCCOC(=O)C(C)=C)C=C1 CUELLYFAYBGQNX-UHFFFAOYSA-N 0.000 description 3
- FKQRLVOYLCQWSD-UHFFFAOYSA-N COc1ccc(C(=O)c2ccc(OCCOC(C)=O)cc2)c(OC)c1 Chemical compound COc1ccc(C(=O)c2ccc(OCCOC(C)=O)cc2)c(OC)c1 FKQRLVOYLCQWSD-UHFFFAOYSA-N 0.000 description 3
- CJOYDDHNIMYKMR-UHFFFAOYSA-N COc1ccc(C(=O)c2ccc(OCCOC=C)cc2)c(OC)c1 Chemical compound COc1ccc(C(=O)c2ccc(OCCOC=C)cc2)c(OC)c1 CJOYDDHNIMYKMR-UHFFFAOYSA-N 0.000 description 3
- OQQMZRPNRMKXSL-UHFFFAOYSA-N COc1ccc(c(OC)c1)C(OC)(OC)c1ccc(OCCO)cc1 Chemical compound COc1ccc(c(OC)c1)C(OC)(OC)c1ccc(OCCO)cc1 OQQMZRPNRMKXSL-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000012965 benzophenone Substances 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 229920006026 co-polymeric resin Polymers 0.000 description 3
- 229940126214 compound 3 Drugs 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- DCUFMVPCXCSVNP-UHFFFAOYSA-N methacrylic anhydride Chemical compound CC(=C)C(=O)OC(=O)C(C)=C DCUFMVPCXCSVNP-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000012048 reactive intermediate Substances 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- IURGYWYYSWWBQS-UHFFFAOYSA-N 1,3,5-trimethoxy-2-prop-1-en-2-ylbenzene Chemical compound COC1=CC(OC)=C(C(C)=C)C(OC)=C1 IURGYWYYSWWBQS-UHFFFAOYSA-N 0.000 description 2
- YLMKOEBRKYHETF-UHFFFAOYSA-N 1-[1-(2,4-dimethoxyphenyl)ethenyl]-2,4-dimethoxybenzene Chemical group COC1=CC(OC)=CC=C1C(=C)C1=CC=C(OC)C=C1OC YLMKOEBRKYHETF-UHFFFAOYSA-N 0.000 description 2
- OIUWXBBWYFYGRX-UHFFFAOYSA-N 2-[(2-methyl-2-adamantyl)methyl]prop-2-enoic acid Chemical compound C1C(C2)CC3CC1C(C)(CC(=C)C(O)=O)C2C3 OIUWXBBWYFYGRX-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- 239000007848 Bronsted acid Substances 0.000 description 2
- 239000003341 Bronsted base Substances 0.000 description 2
- NIYIIHFPSWWOCF-UHFFFAOYSA-N COc1ccc(C(=O)c2ccc(CCOC(=O)C(C)=C)cc2)c(OC)c1 Chemical compound COc1ccc(C(=O)c2ccc(CCOC(=O)C(C)=C)cc2)c(OC)c1 NIYIIHFPSWWOCF-UHFFFAOYSA-N 0.000 description 2
- VSYVVXRTCXIEMD-UHFFFAOYSA-N COc1ccc(C(=O)c2ccc(OCCO)cc2)c(OC)c1 Chemical compound COc1ccc(C(=O)c2ccc(OCCO)cc2)c(OC)c1 VSYVVXRTCXIEMD-UHFFFAOYSA-N 0.000 description 2
- IVSXQKVGXFIAAQ-UHFFFAOYSA-N COc1ccc(c(OC)c1)C1(OCCO1)c1ccc(OC)cc1OC Chemical compound COc1ccc(c(OC)c1)C1(OCCO1)c1ccc(OC)cc1OC IVSXQKVGXFIAAQ-UHFFFAOYSA-N 0.000 description 2
- GIQWSBSHQGSQAE-UHFFFAOYSA-N COc1ccc(c(OC)c1)C1(OCCO1)c1ccc(OCCO)cc1 Chemical compound COc1ccc(c(OC)c1)C1(OCCO1)c1ccc(OCCO)cc1 GIQWSBSHQGSQAE-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000004104 aryloxy group Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 125000000468 ketone group Chemical group 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 2
- LSEFCHWGJNHZNT-UHFFFAOYSA-M methyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 LSEFCHWGJNHZNT-UHFFFAOYSA-M 0.000 description 2
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 208000017983 photosensitivity disease Diseases 0.000 description 2
- 231100000434 photosensitization Toxicity 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 125000006239 protecting group Chemical group 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium group Chemical group [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 2
- 238000006276 transfer reaction Methods 0.000 description 2
- QEHRETCJMLQPCR-UHFFFAOYSA-N (2,4-dimethoxyphenyl)-(4-hydroxyphenyl)methanone Chemical compound COC1=CC(OC)=CC=C1C(=O)C1=CC=C(O)C=C1 QEHRETCJMLQPCR-UHFFFAOYSA-N 0.000 description 1
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- 125000005808 2,4,6-trimethoxyphenyl group Chemical group [H][#6]-1=[#6](-[#8]C([H])([H])[H])-[#6](-*)=[#6](-[#8]C([H])([H])[H])-[#6]([H])=[#6]-1-[#8]C([H])([H])[H] 0.000 description 1
- REEBWSYYNPPSKV-UHFFFAOYSA-N 3-[(4-formylphenoxy)methyl]thiophene-2-carbonitrile Chemical compound C1=CC(C=O)=CC=C1OCC1=C(C#N)SC=C1 REEBWSYYNPPSKV-UHFFFAOYSA-N 0.000 description 1
- BWGRDBSNKQABCB-UHFFFAOYSA-N 4,4-difluoro-N-[3-[3-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)-8-azabicyclo[3.2.1]octan-8-yl]-1-thiophen-2-ylpropyl]cyclohexane-1-carboxamide Chemical compound CC(C)C1=NN=C(C)N1C1CC2CCC(C1)N2CCC(NC(=O)C1CCC(F)(F)CC1)C1=CC=CS1 BWGRDBSNKQABCB-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 239000002879 Lewis base Substances 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000004036 acetal group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000005110 aryl thio group Chemical group 0.000 description 1
- 125000004618 benzofuryl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 125000004987 dibenzofuryl group Chemical group C1(=CC=CC=2OC3=C(C21)C=CC=C3)* 0.000 description 1
- 125000005509 dibenzothiophenyl group Chemical group 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/215—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
- C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
- C07D317/10—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings
- C07D317/14—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings with substituted hydrocarbon radicals attached to ring carbon atoms
- C07D317/18—Radicals substituted by singly bound oxygen or sulfur atoms
- C07D317/22—Radicals substituted by singly bound oxygen or sulfur atoms etherified
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Abstract
【解決手段】電磁波又は粒子線に露光することにより、試剤を含む組成物中の光酸発生剤の酸発生を向上させる試剤(光増感剤)、及び、かかる試剤を含有する組成物。
【選択図】なし
Description
本出願の特許請求の範囲は、米国特許法35U.S.C.S 119(e)に基づいて2013年11月18日に出願された米国仮出願第61/905,792号及び2013年11月19日に出願された米国仮出願第61/906,323号の利益を主張するものであり、その内容がここに援用される。
部材に、上述の組成物を含む液体を塗布し、上記部材上に組成物を含む膜を形成し;
上記塗布膜の第1部分が第1電磁波及び第1粒子線のうちの少なくとも1つで露光されるようにしつつ、上記塗布膜の第2部分は上記第1電磁波及び上記第1粒子線のうちの少なくとも1つで露光されないように、上記第1電磁波及び上記第1粒子線のうちの少なくとも1つにより上記塗布膜を露光する、工程を含む。
部材に、上述の組成物を含む液体を塗布し、上記部材上に上記組成物を含む膜を形成し;
上記塗布膜の第1部分が第1電磁波及び第1粒子線のうちの少なくとも1つで露光されるようにしつつ、上記塗布膜の第2部分は上記第1電磁波及び上記第1粒子線のうちの少なくとも1つで露光されないように、上記第1電磁波及び上記第1粒子線のうちの少なくとも1つにより上記塗布膜を露光する、工程を含む。
部材に、上述の組成物を含む液体を塗布し、部材上に上記組成物を含む膜を形成する第1塗布;
上記塗布膜の第1部分を電磁波及び粒子線のうちの少なくとも1つで露光するようにしつつ、塗布膜の第2部分を上記電磁波及び上記粒子線のうちの少なくとも1つで露光しないように、電磁波及び粒子線のうちの少なくとも1つにより上記塗布膜を露光する第2工程;
上記第1部分を除去する第3工程。
2−イソプロペニル−1,3,5−トリメトキシベンゼン(化合物1)の合成
樹脂B
樹脂C
評価サンプル11及び17のそれぞれは、光増感剤の前駆体又は電子供与体に加えて、NHNI−PFBS等の電子を受容する光増感剤を含む。すなわち、評価サンプル11及び17のそれぞれは、電子を受容する光増感剤、及び、電子を供給する光増感剤の2種類の光増感剤両方を含む。かかる複数の光増感剤は、さらに酸等の化学種の生成効率を向上させ得る。
Claims (20)
- 試剤であって、
該試剤を含有する組成物、該組成物を含有する液体及び前記組成物の膜のうちの少なくとも1つにおいて化合物を発生させ得、
前記化合物が、該化合物と物質との相互作用により、前記化合物及び物質のうちの少なくとも1つからの第1化学種を向上させ得ることを特徴とする試剤。 - 前記相互作用が、前記組成物、液体及び膜への第1電磁線及び第1粒子線のうちの少なくとも1つによる露光によって促進されることを特徴とする請求項1に記載の試剤。
- 前記化合物が、前記試剤と、前記化合物から発生する第2化学種と、の反応により生成する請求項1又は2に記載の試剤。
- 前記第1化学種が、前記化合物との相互作用なしで前記物質から発生し、
前記化合物が、前記試剤と前記第1化学種との反応により生成する請求項1〜3のいずれか1項に記載の試剤。 - 前記化合物が、前記物質へ電子を供与し得る請求項1〜4のいずれか一項に記載の試剤。
- 前記試剤が、前記膜にエネルギーを供給することによって誘発される工程を介して前記化合物を発生させ得る請求項1〜5のいずれか一項に記載の試剤。
- 前記化合物の共役長が、前記試剤の共役長よりも長い請求項1〜6のいずれか一項に記載の試剤。
- 前記試剤が少なくとも2つのπ電子系を有し、
前記化合物が少なくとも2つのπ電子系を有し、
前記化合物における少なくとも2つのπ電子系間の電子相互作用は、前記試剤における少なくとも2つのπ電子系間の電子相互作用よりも強い、請求項1〜7のいずれか一項に記載の試剤。 - 物質からの化学種の発生を向上させ得ることを特徴とする化合物。
- 化合物であって、
物質が励起したとき、物質へ電子を供給又は物質から電子を受容し得、
前記化合物から電子を受容又は該化合物へ電子を供給することにより、前記物質が化学種を発生し得ることを特徴とする化合物。 - 少なくとも1つの芳香族基と、電子供与基とを有する請求項9又は10に記載の化合物。
- 多重結合を有する請求項9〜11のいずれか一項に記載の化合物。
- 前記多重結合が、炭素−酸素二重結合及び炭素−炭素二重結合のいずれかである請求項12に記載の化合物。
- 請求項9〜13のいずれか一項に記載の化合物と、前記物質と、を含む組成物。
- 化学種と反応する合成物をさらに含む請求項14に記載の組成物。
- 装置の層間絶縁膜の形成に用いられることを特徴とする請求項14又は15に記載の組成物。
- 前記層間絶縁膜が、前記組成物の少なくとも一部から形成される請求項16に記載の組成物。
- 請求項14〜17のいずれか一項に記載の組成物を用いて実施されることを特徴とする装置の製造方法。
- 請求項14〜17のいずれか一項に記載の組成物を含む液体を、該組成物を含む塗布膜が前記部材上に形成されるように部材に塗布し、
前記塗布膜の第1部分が前記第1電磁波及び第1粒子線のうちの少なくとも1つにより露光されるように、且つ、前記塗布膜の第2部分が前記第1電磁波及び第1粒子線のうちの少なくとも1つにより露光されないように、第1電磁波及び第1粒子のうちの少なくとも1つにより前記塗布膜を露光する工程を含む、装置の製造方法。 - 前記第1部分を除去する工程をさらに含む請求項19に記載の方法。
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US201361905792P | 2013-11-18 | 2013-11-18 | |
US61/905,792 | 2013-11-18 | ||
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016133073A1 (ja) * | 2015-02-18 | 2016-08-25 | 東洋合成工業株式会社 | 化合物、該化合物を含有する組成物及びそれを用いたデバイスの製造方法 |
WO2017188297A1 (ja) * | 2016-04-28 | 2017-11-02 | 東洋合成工業株式会社 | レジスト組成物及びそれを用いたデバイスの製造方法 |
US9939729B2 (en) | 2015-09-10 | 2018-04-10 | Jsr Corporation | Resist pattern-forming method |
US9971247B2 (en) | 2015-08-20 | 2018-05-15 | Osaka University | Pattern-forming method |
US9989849B2 (en) | 2015-11-09 | 2018-06-05 | Jsr Corporation | Chemically amplified resist material and resist pattern-forming method |
US10018911B2 (en) | 2015-11-09 | 2018-07-10 | Jsr Corporation | Chemically amplified resist material and resist pattern-forming method |
US10073348B2 (en) | 2015-08-20 | 2018-09-11 | Osaka University | Resist-pattern-forming method and chemically amplified resist material |
US10073349B2 (en) | 2015-08-20 | 2018-09-11 | Osaka University | Chemically amplified resist material, pattern-forming method, compound, and production method of compound |
WO2018180308A1 (ja) * | 2017-03-28 | 2018-10-04 | Jsr株式会社 | 化学増幅型レジスト材料及びレジストパターン形成方法 |
US10120282B2 (en) | 2015-09-10 | 2018-11-06 | Jsr Corporation | Chemically amplified resist material and resist pattern-forming method |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014208076A1 (en) | 2013-06-24 | 2014-12-31 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
US10031416B2 (en) * | 2013-08-07 | 2018-07-24 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
US9952508B2 (en) * | 2013-09-30 | 2018-04-24 | Toyo Gosei Co., Ltd. | Compounders for enhancing generation of chemical species |
US9567277B2 (en) | 2013-10-08 | 2017-02-14 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
JP2015134904A (ja) | 2013-11-18 | 2015-07-27 | 東洋合成工業株式会社 | 化学種発生向上化合物 |
JP2016009195A (ja) * | 2014-06-26 | 2016-01-18 | 東洋合成工業株式会社 | 化学種の発生を向上させるための化合物 |
US9793325B2 (en) * | 2015-06-08 | 2017-10-17 | Boe Technology Group Co., Ltd. | OLED display panel and the method for fabricating the same, and OLED display apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005503473A (ja) * | 2001-09-27 | 2005-02-03 | ルミゲン インク | 優れたポリマー支持光増感剤 |
JP2013228675A (ja) * | 2012-03-30 | 2013-11-07 | Fujifilm Corp | 感光性樹脂組成物、これを用いたパターンの製造方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1015787A (en) * | 1962-08-03 | 1966-01-05 | Giuseppe Carlo Sigurta | Tris-(p-methoxyphenyl)ethylene derivatives |
GB1518141A (en) * | 1974-05-02 | 1978-07-19 | Gen Electric | Polymerizable compositions |
JPS60181107A (ja) * | 1984-02-29 | 1985-09-14 | Hitachi Ltd | 含金属透明樹脂及びその製造法、並びにレンズ、光導波路、光学繊維及び塗膜用ワニス |
JPS6363648A (ja) * | 1986-09-03 | 1988-03-22 | Yamada Chem Co Ltd | ジフエニルエチレン誘導体及びその製造法 |
JPH01138554A (ja) * | 1987-11-26 | 1989-05-31 | Toagosei Chem Ind Co Ltd | 複合レジスト層 |
FR2636441B1 (fr) * | 1988-09-15 | 1993-11-05 | Rhone Poulenc Chimie | Composes organiques actif en optique non lineaire et dispositifs electrooptiques les contenant |
US4938790A (en) * | 1989-06-15 | 1990-07-03 | The Dow Chemical Company | Herbicidal 12-substituted 12H-dibenzo(D,G)(1,3)dioxocin-6-carboxylic acids |
US5162470A (en) * | 1991-04-09 | 1992-11-10 | Stenger Smith John | Polymers with electrical and nonlinear optical properties |
US5326661A (en) * | 1991-11-13 | 1994-07-05 | Hoechst Celanese Corp. | Photorefractive polymers containing discrete photoconductive and electrooptical units |
KR950001416A (ko) * | 1993-06-04 | 1995-01-03 | 미야베 요시까즈 | 네가형 감광성 조성물 및 이것을 사용한 패턴의 형성방법 |
US5665522A (en) * | 1995-05-02 | 1997-09-09 | Minnesota Mining And Manufacturing Company | Visible image dyes for positive-acting no-process printing plates |
US5684621A (en) | 1995-05-08 | 1997-11-04 | Downing; Elizabeth Anne | Method and system for three-dimensional display of information based on two-photon upconversion |
US6267913B1 (en) * | 1996-11-12 | 2001-07-31 | California Institute Of Technology | Two-photon or higher-order absorbing optical materials and methods of use |
US6514434B1 (en) * | 2000-06-16 | 2003-02-04 | Corning Incorporated | Electro-optic chromophore bridge compounds and donor-bridge compounds for polymeric thin film waveguides |
JP2004020735A (ja) * | 2002-06-13 | 2004-01-22 | Fuji Photo Film Co Ltd | ネガ型レジスト組成物 |
WO2004092235A1 (ja) * | 2003-04-11 | 2004-10-28 | Daikin Industries, Ltd. | 環状エーテル共重合体、コーティング用樹脂組成物、光デバイス、光デバイス製造方法 |
JP2005309359A (ja) * | 2004-03-25 | 2005-11-04 | Fuji Photo Film Co Ltd | ホログラム記録材料、ホログラム記録方法、光記録媒体、3次元ディスプレイホログラムおよびホログラフィック光学素子。 |
DE102004029239A1 (de) * | 2004-05-03 | 2005-12-01 | Symrise Gmbh & Co. Kg | Benyliden-β-dicarbonylverbindungen als neue UV-Absorber |
JP4544085B2 (ja) * | 2004-09-28 | 2010-09-15 | Jsr株式会社 | ポジ型感放射線性樹脂組成物 |
US7514764B2 (en) | 2005-03-23 | 2009-04-07 | Wisconsin Alumni Research Foundation | Materials and methods for creating imaging layers |
US20090079913A1 (en) * | 2005-07-15 | 2009-03-26 | Fujifilm Corporation | Optically anisotropic film, polarizing film, producing process thereof, and application use thereof |
WO2013091696A1 (en) * | 2011-12-21 | 2013-06-27 | Lek Pharmaceuticals D.D. | Synthesis of intermediates for preparing anacetrapib and derivatives thereof |
KR20160006721A (ko) | 2013-05-13 | 2016-01-19 | 도요 고세이 고교 가부시키가이샤 | 시제 및 레지스트의 조성물 |
WO2014208076A1 (en) | 2013-06-24 | 2014-12-31 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
WO2014208103A1 (en) | 2013-06-27 | 2014-12-31 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
US20160147144A1 (en) | 2013-06-27 | 2016-05-26 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
US10031416B2 (en) | 2013-08-07 | 2018-07-24 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
US20160195808A1 (en) | 2013-08-14 | 2016-07-07 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
US20150060728A1 (en) * | 2013-09-05 | 2015-03-05 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
US9567277B2 (en) * | 2013-10-08 | 2017-02-14 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
JP2015134904A (ja) | 2013-11-18 | 2015-07-27 | 東洋合成工業株式会社 | 化学種発生向上化合物 |
JP2015200874A (ja) * | 2014-02-21 | 2015-11-12 | 東洋合成工業株式会社 | 化学種発生向上剤 |
-
2014
- 2014-11-17 JP JP2014233141A patent/JP2015134904A/ja active Pending
- 2014-11-18 US US14/547,088 patent/US9593060B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005503473A (ja) * | 2001-09-27 | 2005-02-03 | ルミゲン インク | 優れたポリマー支持光増感剤 |
JP2013228675A (ja) * | 2012-03-30 | 2013-11-07 | Fujifilm Corp | 感光性樹脂組成物、これを用いたパターンの製造方法 |
Non-Patent Citations (2)
Title |
---|
J. AM. CHEM. SOC., vol. 120, JPN6018051143, 1998, pages 3243 - 3244, ISSN: 0003947195 * |
SYNTHETIC COMMUNICATIONS, vol. 29, no. 10, JPN6018051142, 1999, pages 1687 - 1695, ISSN: 0003947194 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US9971247B2 (en) | 2015-08-20 | 2018-05-15 | Osaka University | Pattern-forming method |
US10073348B2 (en) | 2015-08-20 | 2018-09-11 | Osaka University | Resist-pattern-forming method and chemically amplified resist material |
US10073349B2 (en) | 2015-08-20 | 2018-09-11 | Osaka University | Chemically amplified resist material, pattern-forming method, compound, and production method of compound |
US9939729B2 (en) | 2015-09-10 | 2018-04-10 | Jsr Corporation | Resist pattern-forming method |
US10120282B2 (en) | 2015-09-10 | 2018-11-06 | Jsr Corporation | Chemically amplified resist material and resist pattern-forming method |
US9989849B2 (en) | 2015-11-09 | 2018-06-05 | Jsr Corporation | Chemically amplified resist material and resist pattern-forming method |
US10018911B2 (en) | 2015-11-09 | 2018-07-10 | Jsr Corporation | Chemically amplified resist material and resist pattern-forming method |
WO2017188297A1 (ja) * | 2016-04-28 | 2017-11-02 | 東洋合成工業株式会社 | レジスト組成物及びそれを用いたデバイスの製造方法 |
WO2018180308A1 (ja) * | 2017-03-28 | 2018-10-04 | Jsr株式会社 | 化学増幅型レジスト材料及びレジストパターン形成方法 |
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US9593060B2 (en) | 2017-03-14 |
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