JP2015076608A - マイクロ構成を利用して表面プラズモンを形成する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000002245 particle Substances 0.000 claims description 37
- 239000000725 suspension Substances 0.000 claims description 37
- 239000002923 metal particle Substances 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 27
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 238000007598 dipping method Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000004904 shortening Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 98
- 239000010408 film Substances 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000001338 self-assembly Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005102 attenuated total reflection Methods 0.000 description 1
- 230000008275 binding mechanism Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/02—Mechanical
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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Abstract
【解決手段】本発明に係るマイクロ構成を利用して表面プラズモンを形成する方法は、基体を取得した後、担体によって複数の金属ナノ粒子を載置し、前記基体上において、自己集合するように非連続面及び一部連続面から選出するこれ等金属ナノ粒子より構成するマイクロ構成を形成している。そのため、自己集合するように非連続面及び一部連続面から選出するこれ等金属ナノ粒子より構成するマイクロ構成を表面プラズモンとすることで、化学蒸着等の高コストな方法の使用を避け、作成コストの削減及び作成時間の短縮という目的を達している。従来の表面プラズモン波の構成にある制限を破り、表面プラズモン波の発生効果をさらに向上している。
【選択図】図1
Description
10a 基体
11 基板
12 N型半導体層
13 多重量子井戸層
14 P型半導体層
15 第二誘電体層
20 金属粒子堆積膜層
21 金属ナノ粒子
22 担体
22a 担体
23 ナノ粒子懸濁膜
30 第一誘電体層
31 第二粒子懸濁層
40 第一粒子懸濁層
40a 第一粒子懸濁層
50 フォトレジスト
60 透明導電層
70 電極
81 表面プラズモン発光ダイオード
82 一般の発光ダイオード
91 対称曲線
92 低速回転曲線
93 高速回転曲線
L1 光吸収エリア
L2 光吸収エリア
S1 工程
S2 工程
S3 工程
S4 工程
S21 工程
S22 工程
S23 工程
Claims (9)
- 基体を取得する工程S1と、
担体によって複数の金属ナノ粒子を載置し、前記基体上において、自己集合するように非連続面及び一部連続面から選出するこれ等金属ナノ粒子より構成する、マイクロ構成を形成する工程S2と、を包括することを特徴とするマイクロ構成を利用して表面プラズモンを形成する方法。 - 前記工程S2において、前記担体は揮発性の液体であって、これら金属ナノ粒子は前記担体に均一に分散し、且つ、
回転塗布、吹付け、点塗布及び浸し塗りから構成する群のいずれかの方法を選出することによって、これ等担体及びこれ等金属ナノ粒子を前記基体上に形成する形成工程S21と、
これ等金属ナノ粒子が前記担体の中で互いに移動することで、自己集合するように複数の二次元六方最密構造を形成する成形工程S22と、
前記担体を徐々に揮発させ、これ等二次元六方最密構造を幾層に堆積して一部連続面で構成するマイクロ構成とする金属粒子堆積膜層を形成する熱乾燥工程S23と、をさらに包括することを特徴とする請求項1に記載のマイクロ構成を利用して表面プラズモンを形成する方法。 - 前記担体は、アセトン或いはイソプロピルアルコールであることを特徴とする請求項2に記載のマイクロ構成を利用して表面プラズモンを形成する方法。
- 前記工程S2の後、前記基体から離れた前記金属粒子堆積膜層の側面に前記第一誘電体層を形成し、前記金属粒子堆積膜層にあるこれ等金属ナノ粒子は吸着或いは拡散することによって前記第一誘電体層に入り込み、第一粒子懸濁層を形成する工程S3をさらに包括することを特徴とする請求項2に記載のマイクロ構成を利用して表面プラズモンを形成する方法。
- 前記第一誘電体層の材質は、インジウム−スズ酸化物、アルミニウムドープ酸化亜鉛、酸化亜鉛のいずれか一つであることを特徴とする請求項4に記載のマイクロ構成を利用して表面プラズモンを形成する方法。
- 前記工程S1において、前記基体は複数の凹溝を有し、前記工程S2の後、誘電体物質を前記金属粒子堆積膜層上に堆積し、これ等金属ナノ粒子は自己集合するように前記誘電体物質を被包して複数の球状構成を形成する工程S4をことを特徴とする請求項2に記載のマイクロ構成を利用して表面プラズモンを形成する方法。
- 前記工程S2において、これ等金属ナノ粒子は、吸着或いは拡散することによって前記基体に入り込み、第三粒子懸濁層を形成することを特徴とする請求項1に記載のマイクロ構成を利用して表面プラズモンを形成する方法。
- 前記工程S1において、前記基体の表面に第二誘電体層を有し、前記工程S2において、これ等金属ナノ粒子は吸着或いは拡散することによって前記第二誘電体層に入り込み、第二粒子懸濁層を形成することを特徴とする請求項1に記載のマイクロ構成を利用して表面プラズモンを形成する方法。
- 前記工程S2において、前記担体は、非揮発性の液体であって、これ等金属ナノ粒子は、前記担体に均一に分散し、前記基体上に非連続面で構成するマイクロ構成とするナノ粒子懸濁膜を形成することを特徴とする請求項1に記載のマイクロ構成を利用して表面プラズモンを形成する方法。
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TW102136489A TWI472059B (zh) | 2013-10-09 | 2013-10-09 | A method of forming a surface plasma using a microstructure |
TW102136489 | 2013-10-09 |
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EP (1) | EP2860152B1 (ja) |
JP (1) | JP6305873B2 (ja) |
CN (1) | CN104576873B (ja) |
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TWI581452B (zh) * | 2014-10-24 | 2017-05-01 | Nat Chunghsing Univ | High light extraction rate of light-emitting diodes, conductive films, and conductive films The production method |
CN108507678A (zh) * | 2018-03-01 | 2018-09-07 | 东南大学 | 一种等离激元多谐振机制增强的可调超光谱探测芯片 |
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JP6305873B2 (ja) | 2018-04-04 |
US20150228863A1 (en) | 2015-08-13 |
US9450154B2 (en) | 2016-09-20 |
US9293659B2 (en) | 2016-03-22 |
TWI472059B (zh) | 2015-02-01 |
EP2860152B1 (en) | 2017-03-22 |
TW201515258A (zh) | 2015-04-16 |
EP2860152A1 (en) | 2015-04-15 |
CN104576873A (zh) | 2015-04-29 |
PL2860152T3 (pl) | 2017-09-29 |
CN104576873B (zh) | 2017-07-14 |
ES2631178T3 (es) | 2017-08-29 |
US20150099321A1 (en) | 2015-04-09 |
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