JP5312146B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP5312146B2 JP5312146B2 JP2009082791A JP2009082791A JP5312146B2 JP 5312146 B2 JP5312146 B2 JP 5312146B2 JP 2009082791 A JP2009082791 A JP 2009082791A JP 2009082791 A JP2009082791 A JP 2009082791A JP 5312146 B2 JP5312146 B2 JP 5312146B2
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 238000005401 electroluminescence Methods 0.000 claims abstract description 17
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 239000010419 fine particle Substances 0.000 claims description 120
- 239000010410 layer Substances 0.000 claims description 112
- 239000011258 core-shell material Substances 0.000 claims description 46
- 239000012212 insulator Substances 0.000 claims description 24
- 230000005525 hole transport Effects 0.000 claims description 12
- 238000000605 extraction Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 239000012044 organic layer Substances 0.000 claims description 2
- 239000011859 microparticle Substances 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 11
- 238000005253 cladding Methods 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004904 shortening Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- NSMJMUQZRGZMQC-UHFFFAOYSA-N 2-naphthalen-1-yl-1H-imidazo[4,5-f][1,10]phenanthroline Chemical compound C12=CC=CN=C2C2=NC=CC=C2C2=C1NC(C=1C3=CC=CC=C3C=CC=1)=N2 NSMJMUQZRGZMQC-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/38—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal at least one coating being a coating of an organic material
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/44—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the composition of the continuous phase
- C03C2217/445—Organic continuous phases
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/465—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase having a specific shape
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
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- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
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- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/48—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase having a specific function
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- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
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Description
図面を参照して本発明に係る実施形態のエレクトロルミネッセンス素子(EL素子)について説明する。図1は、本実施形態のEL素子の素子構成を模式的に示した断面図である。視認しやすくするため、構成要素の縮尺は実際のものとは適宜異ならせてある。
4 エレクロトロルミネッセンス素子(無機LED)
11,31 陽極
13 正孔輸送層
14,34 発光層(発光領域)
15 電子輸送層
16,36 陰極
20 コアシェル型微粒子(微粒子)
21 絶縁体シェル
22 金属微粒子(金属微粒子コア)
33 p型クラッド層
35 n型クラッド層
Claims (8)
- 電極間に、複数の層が積層されてなり、該複数の層の間に、前記電極間への電界の印加により発光する発光領域を備えた、エレクトロルミネッセンス素子であって、
前記発光領域の近傍又は内部に配置された、前記発光領域からの発光光によるプラズモン共鳴を表面に生じせしめる少なくとも1つの微粒子を備え、
該微粒子は、少なくとも1つの金属微粒子コアと、該金属微粒子コアを覆う絶縁体シェルとからなるコアシェル型微粒子であり、
該コアシェル型微粒子又は前記金属微粒子が、該微粒子の長径とそれに垂直な短径のアスペクト比が1より大きい細長い形状の微粒子であり、前記エレクトロルミネッセンス素子の光取り出し面側において散乱光の強度を増加させるように、多数の該細長い形状の微粒子が、該微粒子の短径が前記電極面に対して略垂直向に配向性を有して配置されてなることを特徴とするエレクトロルミネッセンス素子。 - 前記コアシェル型微粒子の少なくとも一部が、前記発光領域の内部及び/又は表面に配置されてなることを特徴とする請求項1に記載のエレクトロルミネッセンス素子。
- 多数の前記コアシェル型微粒子が、前記発光領域の内部に分散されてなることを特徴とする請求項2に記載のエレクトロルミネッセンス素子。
- 少なくとも1つの前記コアシェル型微粒子が、該コアシェル型微粒子内の少なくとも1つの前記金属微粒子の表面と前記発光層との距離が30nm以下となるように配置されてなることを特徴とする請求項1〜3のいずれかに記載のエレクトロルミネッセンス素子。
- 前記金属微粒子の粒子径が、10nm以上1μm以下であることを特徴とする請求項1〜4のいずれかに記載のエレクトロルミネッセンス素子。
- 前記複数の層が、それぞれ有機層から形成された、少なくとも電子輸送層、発光層、正孔輸送層を含むことを特徴とする請求項1〜5のいずれかに記載のエレクトロルミネッセンス素子。
- 多数の前記コアシェル型微粒子が、前記電子輸送層の内部に分散されてなることを特徴とする請求項6に記載のエレクトロルミネッセンス素子。
- 多数の前記コアシェル型微粒子が、前記正孔輸送層の内部に分散されてなることを特徴とする請求項6に記載のエレクトロルミネッセンス素子。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009082791A JP5312146B2 (ja) | 2009-03-30 | 2009-03-30 | 発光素子 |
EP10758249.6A EP2415094B1 (en) | 2009-03-30 | 2010-03-29 | Light emitting device |
PCT/JP2010/002288 WO2010113469A1 (en) | 2009-03-30 | 2010-03-29 | Light emitting device |
US13/262,430 US20120043532A1 (en) | 2009-03-30 | 2010-03-29 | Light emitting device |
KR1020167023797A KR20160105546A (ko) | 2009-03-30 | 2010-03-29 | 발광 소자 |
KR1020207002364A KR102341222B1 (ko) | 2009-03-30 | 2010-03-29 | 발광 소자 |
CN201080014238.XA CN102365767B (zh) | 2009-03-30 | 2010-03-29 | 发光装置 |
KR1020117021937A KR20120003439A (ko) | 2009-03-30 | 2010-03-29 | 발광 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009082791A JP5312146B2 (ja) | 2009-03-30 | 2009-03-30 | 発光素子 |
Publications (3)
Publication Number | Publication Date |
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JP2010238775A JP2010238775A (ja) | 2010-10-21 |
JP2010238775A5 JP2010238775A5 (ja) | 2011-09-15 |
JP5312146B2 true JP5312146B2 (ja) | 2013-10-09 |
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JP2009082791A Active JP5312146B2 (ja) | 2009-03-30 | 2009-03-30 | 発光素子 |
Country Status (6)
Country | Link |
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US (1) | US20120043532A1 (ja) |
EP (1) | EP2415094B1 (ja) |
JP (1) | JP5312146B2 (ja) |
KR (3) | KR20160105546A (ja) |
CN (1) | CN102365767B (ja) |
WO (1) | WO2010113469A1 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5761199B2 (ja) * | 2010-10-22 | 2015-08-12 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
JP6018774B2 (ja) | 2011-03-31 | 2016-11-02 | 住友化学株式会社 | 金属系粒子集合体 |
JP6125758B2 (ja) | 2011-03-31 | 2017-05-10 | 住友化学株式会社 | 光学素子 |
JP5979932B2 (ja) * | 2011-03-31 | 2016-08-31 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子 |
JP6085095B2 (ja) | 2011-03-31 | 2017-02-22 | 住友化学株式会社 | 光学素子 |
JP2012244060A (ja) * | 2011-05-23 | 2012-12-10 | Fujifilm Corp | 有機電界発光素子及びその製造方法 |
JP6140397B2 (ja) * | 2011-06-10 | 2017-05-31 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 電磁波発生器及び電磁波発生器アレイ |
KR101811305B1 (ko) * | 2011-07-04 | 2017-12-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
CN102332514A (zh) * | 2011-09-15 | 2012-01-25 | 协鑫光电科技(张家港)有限公司 | 一种发光二极管、电子设备及制造方法 |
WO2013051470A1 (ja) | 2011-10-03 | 2013-04-11 | 住友化学株式会社 | 量子ドット発光素子 |
TWI575792B (zh) * | 2011-11-10 | 2017-03-21 | 日東電工股份有限公司 | 包含奈米結構之發光裝置 |
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KR20160105546A (ko) | 2016-09-06 |
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KR20120003439A (ko) | 2012-01-10 |
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EP2415094B1 (en) | 2015-07-29 |
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