JP2015067752A5 - - Google Patents
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- Publication number
- JP2015067752A5 JP2015067752A5 JP2013204170A JP2013204170A JP2015067752A5 JP 2015067752 A5 JP2015067752 A5 JP 2015067752A5 JP 2013204170 A JP2013204170 A JP 2013204170A JP 2013204170 A JP2013204170 A JP 2013204170A JP 2015067752 A5 JP2015067752 A5 JP 2015067752A5
- Authority
- JP
- Japan
- Prior art keywords
- calculated
- silanol groups
- abrasive grains
- calculated value
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006061 abrasive grain Substances 0.000 description 10
- 239000007800 oxidant agent Substances 0.000 description 8
- 238000005498 polishing Methods 0.000 description 8
- 125000005372 silanol group Chemical group 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000004448 titration Methods 0.000 description 4
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 2
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013204170A JP6113619B2 (ja) | 2013-09-30 | 2013-09-30 | 研磨用組成物 |
| CN201480054190.3A CN105593331B (zh) | 2013-09-30 | 2014-09-02 | 研磨用组合物 |
| US15/023,788 US20160215170A1 (en) | 2013-09-30 | 2014-09-02 | Polishing composition |
| KR1020167007748A KR102263486B1 (ko) | 2013-09-30 | 2014-09-02 | 연마용 조성물 |
| SG11201601941SA SG11201601941SA (en) | 2013-09-30 | 2014-09-02 | Polishing composition |
| PCT/JP2014/073076 WO2015045757A1 (ja) | 2013-09-30 | 2014-09-02 | 研磨用組成物 |
| EP14849721.7A EP3053979A4 (en) | 2013-09-30 | 2014-09-02 | Polishing composition |
| TW103132069A TWI638883B (zh) | 2013-09-30 | 2014-09-17 | Grinding composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013204170A JP6113619B2 (ja) | 2013-09-30 | 2013-09-30 | 研磨用組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015067752A JP2015067752A (ja) | 2015-04-13 |
| JP2015067752A5 true JP2015067752A5 (enExample) | 2016-03-17 |
| JP6113619B2 JP6113619B2 (ja) | 2017-04-12 |
Family
ID=52742904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013204170A Active JP6113619B2 (ja) | 2013-09-30 | 2013-09-30 | 研磨用組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20160215170A1 (enExample) |
| EP (1) | EP3053979A4 (enExample) |
| JP (1) | JP6113619B2 (enExample) |
| KR (1) | KR102263486B1 (enExample) |
| CN (1) | CN105593331B (enExample) |
| SG (1) | SG11201601941SA (enExample) |
| TW (1) | TWI638883B (enExample) |
| WO (1) | WO2015045757A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY176027A (en) * | 2013-09-30 | 2020-07-22 | Hoya Corp | Silica abrasive particles, method for manufacturing silica abrasive particles, and method for manufacturing magnetic-disk glass substrate |
| CN108117839B (zh) * | 2016-11-29 | 2021-09-17 | 安集微电子科技（上海）股份有限公司 | 一种具有高氮化硅选择性的化学机械抛光液 |
| JP6811089B2 (ja) * | 2016-12-26 | 2021-01-13 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
| US11034859B2 (en) * | 2018-03-28 | 2021-06-15 | Fujifilm Electronic Materials U.S.A., Inc. | Barrier ruthenium chemical mechanical polishing slurry |
| US10995238B2 (en) * | 2018-07-03 | 2021-05-04 | Rohm And Haas Electronic Materials Cmp Holdings | Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten |
| JP7219061B2 (ja) * | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
| WO2020171134A1 (ja) * | 2019-02-21 | 2020-08-27 | 三菱ケミカル株式会社 | シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法 |
| JP7638667B2 (ja) * | 2019-11-20 | 2025-03-04 | 株式会社フジミインコーポレーテッド | 研磨組成物、研磨方法および基板の製造方法 |
| CN115380097B (zh) * | 2020-03-30 | 2024-06-14 | 福吉米株式会社 | 研磨用组合物 |
| CN116097405A (zh) * | 2020-08-07 | 2023-05-09 | 株式会社德山 | 包含次溴酸离子和pH缓冲剂的半导体晶片的处理液 |
| JP7663331B2 (ja) * | 2020-09-23 | 2025-04-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP7766536B2 (ja) * | 2022-03-29 | 2025-11-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびこれを用いた研磨方法 |
| KR102693377B1 (ko) * | 2023-07-28 | 2024-08-09 | 한양대학교 산학협력단 | 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US6290736B1 (en) * | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
| US6299795B1 (en) * | 2000-01-18 | 2001-10-09 | Praxair S.T. Technology, Inc. | Polishing slurry |
| US6332831B1 (en) * | 2000-04-06 | 2001-12-25 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
| JP2004172326A (ja) | 2002-11-20 | 2004-06-17 | Hitachi Ltd | 研磨用スラリー及び半導体装置の製造方法 |
| GB2415199B (en) * | 2004-06-14 | 2009-06-17 | Kao Corp | Polishing composition |
| US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
| JP4759298B2 (ja) * | 2005-03-30 | 2011-08-31 | 株式会社フジミインコーポレーテッド | 単結晶表面用の研磨剤及び研磨方法 |
| US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US7678700B2 (en) | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| FR2912841B1 (fr) | 2007-02-15 | 2009-05-22 | Soitec Silicon On Insulator | Procede de polissage d'heterostructures |
| JP2008264952A (ja) * | 2007-04-23 | 2008-11-06 | Shin Etsu Chem Co Ltd | 多結晶シリコン基板の平面研磨加工方法 |
| EP2188344B1 (en) | 2007-09-21 | 2016-04-27 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| JP5333744B2 (ja) * | 2008-02-18 | 2013-11-06 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法 |
| DE102008059044B4 (de) | 2008-11-26 | 2013-08-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
| CN102361940B (zh) * | 2009-01-20 | 2016-03-02 | 卡博特公司 | 包含硅烷改性金属氧化物的组合物 |
| SG176255A1 (en) * | 2009-08-19 | 2012-01-30 | Hitachi Chemical Co Ltd | Polishing solution for cmp and polishing method |
| JP2013084876A (ja) * | 2011-09-30 | 2013-05-09 | Fujimi Inc | 研磨用組成物 |
-
2013
- 2013-09-30 JP JP2013204170A patent/JP6113619B2/ja active Active
-
2014
- 2014-09-02 WO PCT/JP2014/073076 patent/WO2015045757A1/ja not_active Ceased
- 2014-09-02 SG SG11201601941SA patent/SG11201601941SA/en unknown
- 2014-09-02 KR KR1020167007748A patent/KR102263486B1/ko active Active
- 2014-09-02 US US15/023,788 patent/US20160215170A1/en not_active Abandoned
- 2014-09-02 CN CN201480054190.3A patent/CN105593331B/zh active Active
- 2014-09-02 EP EP14849721.7A patent/EP3053979A4/en not_active Withdrawn
- 2014-09-17 TW TW103132069A patent/TWI638883B/zh active
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