JP2015067626A - Resin composition - Google Patents
Resin composition Download PDFInfo
- Publication number
- JP2015067626A JP2015067626A JP2013200309A JP2013200309A JP2015067626A JP 2015067626 A JP2015067626 A JP 2015067626A JP 2013200309 A JP2013200309 A JP 2013200309A JP 2013200309 A JP2013200309 A JP 2013200309A JP 2015067626 A JP2015067626 A JP 2015067626A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- mass
- resin
- less
- manufactured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000011342 resin composition Substances 0.000 title claims abstract description 119
- 239000003822 epoxy resin Substances 0.000 claims abstract description 86
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 86
- -1 ester compound Chemical class 0.000 claims abstract description 74
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000003365 glass fiber Substances 0.000 claims abstract description 47
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 34
- 239000002313 adhesive film Substances 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 32
- 239000000835 fiber Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 abstract description 19
- 230000003746 surface roughness Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 96
- 239000003795 chemical substances by application Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 29
- 229920005989 resin Polymers 0.000 description 28
- 239000011347 resin Substances 0.000 description 28
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 27
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 23
- 239000000047 product Substances 0.000 description 21
- 239000000243 solution Substances 0.000 description 21
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical group C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 19
- 239000004020 conductor Substances 0.000 description 19
- 239000002966 varnish Substances 0.000 description 19
- 229920001971 elastomer Polymers 0.000 description 18
- 229920003986 novolac Polymers 0.000 description 18
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 17
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 16
- 238000007788 roughening Methods 0.000 description 16
- 239000005060 rubber Substances 0.000 description 15
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 14
- 206010042674 Swelling Diseases 0.000 description 14
- 230000008961 swelling Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 12
- 238000010030 laminating Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 11
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229920006287 phenoxy resin Polymers 0.000 description 9
- 239000013034 phenoxy resin Substances 0.000 description 9
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 8
- 238000005553 drilling Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 229920005992 thermoplastic resin Polymers 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000004643 cyanate ester Substances 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- 239000000155 melt Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- 239000004305 biphenyl Substances 0.000 description 6
- 235000010290 biphenyl Nutrition 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000003063 flame retardant Substances 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 5
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 5
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000004962 Polyamide-imide Substances 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 125000001624 naphthyl group Chemical group 0.000 description 5
- 230000003472 neutralizing effect Effects 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 229920002312 polyamide-imide Polymers 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 239000012756 surface treatment agent Substances 0.000 description 5
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 4
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 230000000930 thermomechanical effect Effects 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229940123208 Biguanide Drugs 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000001588 bifunctional effect Effects 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N butadiene group Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012792 core layer Substances 0.000 description 3
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 3
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229920002492 poly(sulfone) Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 235000013824 polyphenols Nutrition 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- SSUJUUNLZQVZMO-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine Chemical compound C1CCC=CN2CCCNC21 SSUJUUNLZQVZMO-UHFFFAOYSA-N 0.000 description 2
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- FVKFHMNJTHKMRX-UHFFFAOYSA-N 3,4,6,7,8,9-hexahydro-2H-pyrimido[1,2-a]pyrimidine Chemical compound C1CCN2CCCNC2=N1 FVKFHMNJTHKMRX-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- AHZMUXQJTGRNHT-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)(C)C1=CC=C(OC#N)C=C1 AHZMUXQJTGRNHT-UHFFFAOYSA-N 0.000 description 2
- 239000011354 acetal resin Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- JUPWRUDTZGBNEX-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O JUPWRUDTZGBNEX-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- DEKLIKGLDMCMJG-UHFFFAOYSA-M decanoate;tetrabutylphosphanium Chemical compound CCCCCCCCCC([O-])=O.CCCC[P+](CCCC)(CCCC)CCCC DEKLIKGLDMCMJG-UHFFFAOYSA-M 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 150000002440 hydroxy compounds Chemical class 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 239000002648 laminated material Substances 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- RMVRSNDYEFQCLF-UHFFFAOYSA-N phenyl mercaptan Natural products SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- SDUWQMDIQSWWIE-UHFFFAOYSA-N (3-cyanato-5-methylidenecyclohexa-1,3-dien-1-yl) cyanate Chemical compound C=C1CC(OC#N)=CC(OC#N)=C1 SDUWQMDIQSWWIE-UHFFFAOYSA-N 0.000 description 1
- AILUJKZWHGGGRF-UHFFFAOYSA-M (4-methylphenyl)-triphenylphosphanium;thiocyanate Chemical compound [S-]C#N.C1=CC(C)=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 AILUJKZWHGGGRF-UHFFFAOYSA-M 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- ISNICOKBNZOJQG-UHFFFAOYSA-N 1,1,2,3,3-pentamethylguanidine Chemical compound CN=C(N(C)C)N(C)C ISNICOKBNZOJQG-UHFFFAOYSA-N 0.000 description 1
- MEBONNVPKOBPEA-UHFFFAOYSA-N 1,1,2-trimethylcyclohexane Chemical group CC1CCCCC1(C)C MEBONNVPKOBPEA-UHFFFAOYSA-N 0.000 description 1
- NQOFYFRKWDXGJP-UHFFFAOYSA-N 1,1,2-trimethylguanidine Chemical compound CN=C(N)N(C)C NQOFYFRKWDXGJP-UHFFFAOYSA-N 0.000 description 1
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 1
- LINDOXZENKYESA-UHFFFAOYSA-N 1,2-dimethylguanidine Chemical compound CNC(N)=NC LINDOXZENKYESA-UHFFFAOYSA-N 0.000 description 1
- OWRCNXZUPFZXOS-UHFFFAOYSA-N 1,3-diphenylguanidine Chemical compound C=1C=CC=CC=1NC(=N)NC1=CC=CC=C1 OWRCNXZUPFZXOS-UHFFFAOYSA-N 0.000 description 1
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-dioxonaphthalene Natural products C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 1
- BOKGTLAJQHTOKE-UHFFFAOYSA-N 1,5-dihydroxynaphthalene Chemical compound C1=CC=C2C(O)=CC=CC2=C1O BOKGTLAJQHTOKE-UHFFFAOYSA-N 0.000 description 1
- JLPWQEHTPOFCPG-UHFFFAOYSA-N 1-(diaminomethylidene)-2-methylguanidine Chemical compound CN=C(N)N=C(N)N JLPWQEHTPOFCPG-UHFFFAOYSA-N 0.000 description 1
- UBJPWXQSHUPNPG-UHFFFAOYSA-N 1-(diaminomethylidene)-2-prop-2-enylguanidine Chemical compound NC(N)=NC(N)=NCC=C UBJPWXQSHUPNPG-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- OEBXWWBYZJNKRK-UHFFFAOYSA-N 1-methyl-2,3,4,6,7,8-hexahydropyrimido[1,2-a]pyrimidine Chemical compound C1CCN=C2N(C)CCCN21 OEBXWWBYZJNKRK-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- RUFZNDNBXKOZQV-UHFFFAOYSA-N 2,3-dihydro-1h-pyrrolo[1,2-a]benzimidazole Chemical compound C1=CC=C2N(CCC3)C3=NC2=C1 RUFZNDNBXKOZQV-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- VVFVRTNNLLZXAL-UHFFFAOYSA-N 2-(2-methylphenyl)guanidine Chemical compound CC1=CC=CC=C1N=C(N)N VVFVRTNNLLZXAL-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- USGCMNLQYSXCDU-UHFFFAOYSA-N 2-cyclohexyl-1-(diaminomethylidene)guanidine Chemical compound NC(N)=NC(N)=NC1CCCCC1 USGCMNLQYSXCDU-UHFFFAOYSA-N 0.000 description 1
- AJGAPBXTFUSKNJ-UHFFFAOYSA-N 2-cyclohexylguanidine Chemical compound NC(=N)NC1CCCCC1 AJGAPBXTFUSKNJ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- KEWLVUBYGUZFKX-UHFFFAOYSA-N 2-ethylguanidine Chemical compound CCNC(N)=N KEWLVUBYGUZFKX-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- YTTFFPATQICAQN-UHFFFAOYSA-N 2-methoxypropan-1-ol Chemical compound COC(C)CO YTTFFPATQICAQN-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- VWSLLSXLURJCDF-UHFFFAOYSA-N 2-methyl-4,5-dihydro-1h-imidazole Chemical compound CC1=NCCN1 VWSLLSXLURJCDF-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- RJIQELZAIWFNTQ-UHFFFAOYSA-N 2-phenyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound O=C1NC(=O)NC(=O)N1.C1=CNC(C=2C=CC=CC=2)=N1 RJIQELZAIWFNTQ-UHFFFAOYSA-N 0.000 description 1
- BKCCAYLNRIRKDJ-UHFFFAOYSA-N 2-phenyl-4,5-dihydro-1h-imidazole Chemical compound N1CCN=C1C1=CC=CC=C1 BKCCAYLNRIRKDJ-UHFFFAOYSA-N 0.000 description 1
- QRJZGVVKGFIGLI-UHFFFAOYSA-N 2-phenylguanidine Chemical compound NC(=N)NC1=CC=CC=C1 QRJZGVVKGFIGLI-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- UIDDPPKZYZTEGS-UHFFFAOYSA-N 3-(2-ethyl-4-methylimidazol-1-yl)propanenitrile Chemical compound CCC1=NC(C)=CN1CCC#N UIDDPPKZYZTEGS-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- XNCOSPRUTUOJCJ-UHFFFAOYSA-N Biguanide Chemical compound NC(N)=NC(N)=N XNCOSPRUTUOJCJ-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZKTFNWPPVIAFDC-UHFFFAOYSA-N OB(O)O.P.P.P Chemical class OB(O)O.P.P.P ZKTFNWPPVIAFDC-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- FFFPYJTVNSSLBQ-UHFFFAOYSA-N Phenolphthalin Chemical compound OC(=O)C1=CC=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 FFFPYJTVNSSLBQ-UHFFFAOYSA-N 0.000 description 1
- 101100410148 Pinus taeda PT30 gene Proteins 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- JNCRKOQSRHDNIO-UHFFFAOYSA-N [4-[(4-cyanato-3,5-dimethylphenyl)methyl]-2,6-dimethylphenyl] cyanate Chemical compound CC1=C(OC#N)C(C)=CC(CC=2C=C(C)C(OC#N)=C(C)C=2)=C1 JNCRKOQSRHDNIO-UHFFFAOYSA-N 0.000 description 1
- SIZDMAYTWUINIG-UHFFFAOYSA-N [4-[1-(4-cyanatophenyl)ethyl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)C1=CC=C(OC#N)C=C1 SIZDMAYTWUINIG-UHFFFAOYSA-N 0.000 description 1
- INHGSGHLQLYYND-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(OC#N)C=C1 INHGSGHLQLYYND-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- XSEUMFJMFFMCIU-UHFFFAOYSA-N buformin Chemical compound CCCC\N=C(/N)N=C(N)N XSEUMFJMFFMCIU-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- DAQREMPZDNTSMS-UHFFFAOYSA-M butyl(triphenyl)phosphanium;thiocyanate Chemical compound [S-]C#N.C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 DAQREMPZDNTSMS-UHFFFAOYSA-M 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000004700 cobalt complex Chemical class 0.000 description 1
- FCEOGYWNOSBEPV-FDGPNNRMSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FCEOGYWNOSBEPV-FDGPNNRMSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- ZKXWKVVCCTZOLD-FDGPNNRMSA-N copper;(z)-4-hydroxypent-3-en-2-one Chemical compound [Cu].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O ZKXWKVVCCTZOLD-FDGPNNRMSA-N 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- AQBLLJNPHDIAPN-LNTINUHCSA-K iron(3+);(z)-4-oxopent-2-en-2-olate Chemical compound [Fe+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O AQBLLJNPHDIAPN-LNTINUHCSA-K 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 150000002696 manganese Chemical class 0.000 description 1
- ZQZQURFYFJBOCE-FDGPNNRMSA-L manganese(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Mn+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZQZQURFYFJBOCE-FDGPNNRMSA-L 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- FZZQNEVOYIYFPF-UHFFFAOYSA-N naphthalene-1,6-diol Chemical compound OC1=CC=CC2=CC(O)=CC=C21 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 1
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- JFOJYGMDZRCSPA-UHFFFAOYSA-J octadecanoate;tin(4+) Chemical compound [Sn+4].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O JFOJYGMDZRCSPA-UHFFFAOYSA-J 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 125000001477 organic nitrogen group Chemical group 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- PRCNQQRRDGMPKS-UHFFFAOYSA-N pentane-2,4-dione;zinc Chemical compound [Zn].CC(=O)CC(C)=O.CC(=O)CC(C)=O PRCNQQRRDGMPKS-UHFFFAOYSA-N 0.000 description 1
- CUQCMXFWIMOWRP-UHFFFAOYSA-N phenyl biguanide Chemical compound NC(N)=NC(N)=NC1=CC=CC=C1 CUQCMXFWIMOWRP-UHFFFAOYSA-N 0.000 description 1
- LYKRPDCJKSXAHS-UHFFFAOYSA-N phenyl-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC(C(=O)C=2C=CC=CC=2)=C1O LYKRPDCJKSXAHS-UHFFFAOYSA-N 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- GHPYAGKTTCKKDF-UHFFFAOYSA-M tetraphenylphosphanium;thiocyanate Chemical compound [S-]C#N.C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 GHPYAGKTTCKKDF-UHFFFAOYSA-M 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/04—Reinforcing macromolecular compounds with loose or coherent fibrous material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/10—Esters; Ether-esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/02—Fibres or whiskers
- C08K7/04—Fibres or whiskers inorganic
- C08K7/14—Glass
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/004—Additives being defined by their length
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Epoxy Resins (AREA)
- Reinforced Plastic Materials (AREA)
Abstract
Description
本発明は、樹脂組成物に関する。更に、本発明は、該樹脂組成物を用いた接着フィルム、硬化物、多層プリント配線板、半導体装置に関する。 The present invention relates to a resin composition. Furthermore, this invention relates to the adhesive film, hardened | cured material, multilayer printed wiring board, and semiconductor device which used this resin composition.
昨今、半導体装置の小型化、高機能化に伴い、多層プリント配線板において、強度を維持したままの薄層化が求められてきている。
薄層化に適したエポキシ樹脂組成物は種々検討されており、例えば、特許文献1では、エポキシ樹脂(a)と、繊維長200μm以下のガラス繊維(b)と、平均粒径30μm以下の球状シリカ(c)とを含有することを特徴とするエポキシ樹脂成形材料が記載されており、繊維長200μm以下のガラス繊維(b)を使用することにより、樹脂の流動性をガラス繊維により抑え、成形品の機械的強度を向上している。
In recent years, with the miniaturization and high functionality of semiconductor devices, multilayer printed wiring boards have been required to be thinned while maintaining strength.
Various epoxy resin compositions suitable for thinning have been studied. For example, in Patent Document 1, epoxy resin (a), glass fiber (b) having a fiber length of 200 μm or less, and spherical shape having an average particle size of 30 μm or less. An epoxy resin molding material characterized by containing silica (c) is described. By using glass fiber (b) having a fiber length of 200 μm or less, resin flowability is suppressed by glass fiber, and molding is performed. The mechanical strength of the product is improved.
しかしながら、本発明者らは、エポキシ樹脂組成物の薄層化について検討を重ねてきたところ、ガラス繊維を含有するエポキシ樹脂組成物を薄層化すると、ガラス繊維が層の表面から露出しやすく、表面粗度が粗くなってしまうことを見出した。 However, the present inventors have repeatedly studied about the thinning of the epoxy resin composition, and when the epoxy resin composition containing glass fibers is thinned, the glass fibers are easily exposed from the surface of the layer, It has been found that the surface roughness becomes rough.
したがって、本発明は、プリント配線板の絶縁層形成に好適な樹脂組成物であって、該樹脂組成物を用いてプリント配線板を製造することにより、薄層化された際にも、低い表面粗度と高いメッキピール強度を達成でき、かつ高温時の低CTE化を達成することができる、樹脂組成物を提供することを目的とする。 Accordingly, the present invention is a resin composition suitable for forming an insulating layer of a printed wiring board, and has a low surface even when thinned by producing a printed wiring board using the resin composition. It is an object of the present invention to provide a resin composition that can achieve roughness and high plating peel strength and can achieve low CTE at high temperatures.
本発明は、上記に鑑みてなされたものであって、エポキシ樹脂、球状シリカ、ガラス繊維を含有する樹脂組成物に、活性エステル化合物を含めることにより、薄層化された際にも、ガラス繊維が層の表面から露出しにくく、低い表面粗度と高いメッキピール強度を達成でき、かつ高温時の低CTE化を達成することができる、樹脂組成物が得られることを見出し、本発明を完成するに至った。 The present invention has been made in view of the above, and includes an active ester compound in a resin composition containing an epoxy resin, spherical silica, and glass fiber, so that the glass fiber is also thinned. Found that a resin composition can be obtained that is difficult to be exposed from the surface of the layer, can achieve low surface roughness and high plating peel strength, and can achieve low CTE at high temperatures. It came to do.
すなわち、本発明は以下の内容を含む。
〔1〕 (A)エポキシ樹脂、(B)活性エステル化合物、(C)球状シリカ、及び(D)ガラス繊維を含有する、樹脂組成物。
〔2〕 樹脂組成物中の不揮発成分を100質量%とした場合、(C)球状シリカと(D)ガラス繊維との合計の含有量が50〜85質量%であり、(D)ガラス繊維の含有量が2〜60質量%である、〔1〕記載の樹脂組成物。
〔3〕 樹脂組成物中の不揮発成分を100質量%とした場合、(D)ガラス繊維の含有量が10〜50質量%である、〔2〕記載の樹脂組成物。
〔4〕 (C)球状シリカの平均粒径が5μm以下である、〔1〕〜〔3〕のいずれか記載の樹脂組成物。
〔5〕 (D)ガラス繊維の平均繊維径が13μm以下であり、平均繊維長が100μm以下である、〔1〕〜〔4〕のいずれか記載の樹脂組成物。
〔6〕 (D)ガラス繊維の平均繊維径が6μm以下である、〔5〕記載の樹脂組成物。
〔7〕 150℃から240℃の平均線熱膨張率が50ppm以下である、〔1〕〜〔6〕のいずれか記載の樹脂組成物。
〔8〕 多層プリント配線板の絶縁層用である、〔1〕〜〔7〕のいずれか記載の樹脂組成物。
〔9〕 〔1〕〜〔8〕のいずれか記載の樹脂組成物から構成される層が支持体上に形成されてなる、接着フィルム。
〔10〕 樹脂組成物から構成される層の厚みが5〜40μmである、〔9〕記載の接着フィルム。
〔11〕 〔1〕〜〔8〕のいずれか記載の樹脂組成物の硬化物。
〔12〕 〔9〕又は〔10〕記載の接着フィルムを用いて製造される、多層プリント配線板。
〔13〕 〔12〕記載の多層プリント配線板を用いることを特徴とする、半導体装置。
That is, the present invention includes the following contents.
[1] A resin composition comprising (A) an epoxy resin, (B) an active ester compound, (C) spherical silica, and (D) glass fibers.
[2] When the nonvolatile component in the resin composition is 100% by mass, the total content of (C) spherical silica and (D) glass fiber is 50 to 85% by mass, and (D) the glass fiber The resin composition according to [1], wherein the content is 2 to 60% by mass.
[3] The resin composition according to [2], wherein the content of the glass fiber (D) is 10 to 50% by mass when the nonvolatile component in the resin composition is 100% by mass.
[4] The resin composition according to any one of [1] to [3], wherein (C) the spherical silica has an average particle size of 5 μm or less.
[5] (D) The resin composition according to any one of [1] to [4], wherein the glass fiber has an average fiber diameter of 13 μm or less and an average fiber length of 100 μm or less.
[6] (D) The resin composition according to [5], wherein the glass fiber has an average fiber diameter of 6 μm or less.
[7] The resin composition according to any one of [1] to [6], wherein an average linear thermal expansion coefficient from 150 ° C. to 240 ° C. is 50 ppm or less.
[8] The resin composition according to any one of [1] to [7], which is for an insulating layer of a multilayer printed wiring board.
[9] An adhesive film in which a layer composed of the resin composition according to any one of [1] to [8] is formed on a support.
[10] The adhesive film according to [9], wherein the layer composed of the resin composition has a thickness of 5 to 40 μm.
[11] A cured product of the resin composition according to any one of [1] to [8].
[12] A multilayer printed wiring board produced using the adhesive film according to [9] or [10].
[13] A semiconductor device using the multilayer printed wiring board according to [12].
本発明は、薄層化された際にも、低い表面粗度と高いメッキピール強度を達成でき、かつ高温時の低CTE化を達成することができる、樹脂組成物を提供することができる。 The present invention can provide a resin composition that can achieve low surface roughness and high plating peel strength even when thinned, and can achieve low CTE at high temperatures.
本発明の一実施形態は、(A)エポキシ樹脂、(B)活性エステル化合物、(C)球状シリカ、及び(D)ガラス繊維を含有する、樹脂組成物を提供する。 One embodiment of the present invention provides a resin composition containing (A) an epoxy resin, (B) an active ester compound, (C) spherical silica, and (D) glass fibers.
<(A)エポキシ樹脂>
本発明に使用するエポキシ樹脂としては、特に限定されないが、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ビスフェノールAF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、tert−ブチル−カテコール型エポキシ樹脂、ナフトール型エポキシ樹脂、ナフタレン型エポキシ樹脂、ナフチレンエーテル型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、アントラセン型エポキシ樹脂、線状脂肪族エポキシ樹脂、ブタジエン構造を有するエポキシ樹脂、脂環式エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂、シクロヘキサンジメタノール型エポキシ樹脂、トリメチロール型エポキシ樹脂、ハロゲン化エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂等が挙げられる。これらは1種又は2種以上組み合わせて使用してもよい。
<(A) Epoxy resin>
The epoxy resin used in the present invention is not particularly limited, but is bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, phenol novolac type epoxy resin, tert-butyl-catechol. Type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, naphthylene ether type epoxy resin, glycidylamine type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, anthracene type epoxy resin, linear aliphatic epoxy resin, Epoxy resin having butadiene structure, cycloaliphatic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy resin, cyclohexanedimethanol type epoxy resin, trimethylol type epoxy Shi resins, halogenated epoxy resins, dicyclopentadiene type epoxy resins. These may be used alone or in combination of two or more.
これらのなかでも、耐熱性向上、絶縁信頼性向上、導体層との密着性向上の観点から、ビスフェノールA型エポキシ樹脂、ナフトール型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂、ナフチレンエーテル型エポキシ樹脂、アントラセン型エポキシ樹脂、ブタジエン構造を有するエポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂が好ましい。具体的には、例えば、ビスフェノールA型エポキシ樹脂(三菱化学(株)製「エピコート828EL」、「YL980」)、ビスフェノールF型エポキシ樹脂(三菱化学(株)製「jER806H」、「YL983U」)、ビスフェノールA型とビスフェノールF型の1:1混合品(新日鉄住金化学(株)製「ZX1059」)、ナフタレン型2官能エポキシ樹脂(DIC(株)製「HP4032」、「HP4032D」、「HP4032SS」、「EXA4032SS」)、ナフタレン型4官能エポキシ樹脂(DIC(株)製「HP4700」、「HP4710」)、ナフトール型エポキシ樹脂(新日鉄住金化学(株)製「ESN−475V」)、ブタジエン構造を有するエポキシ樹脂(ダイセル化学工業(株)製「PB−3600」)、ビフェニル構造を有するエポキシ樹脂(日本化薬(株)製「NC3000H」、「NC3000L」、「NC3100」、三菱化学(株)製「YX4000」、「YX4000H」、「YX4000HK」、「YL6121」)、ジヒドロアントラセン型エポキシ樹脂(三菱化学(株)製「YX8800」)、ナフチレンエーテル型エポキシ樹脂(DIC(株)製「EXA−7310」、「EXA−7311」、「EXA−7311L」、「EXA7311−G3」)、ジシクロペンタジエン型エポキシ樹脂(DIC(株)製「HP−7200H」)などが挙げられる。 Of these, bisphenol A type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, naphthylene ether type from the viewpoint of improving heat resistance, insulation reliability, and adhesion to the conductor layer. Epoxy resins, anthracene type epoxy resins, epoxy resins having a butadiene structure, and dicyclopentadiene type epoxy resins are preferred. Specifically, for example, bisphenol A type epoxy resin (“Epicoat 828EL”, “YL980” manufactured by Mitsubishi Chemical Corporation), bisphenol F type epoxy resin (“jER806H”, “YL983U” manufactured by Mitsubishi Chemical Corporation), 1: 1 mixture of bisphenol A type and bisphenol F type (“ZX1059” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), naphthalene type bifunctional epoxy resin (“HP4032”, “HP4032D”, “HP4032SS” manufactured by DIC Corporation), “EXA4032SS”), naphthalene type tetrafunctional epoxy resin (“HP4700”, “HP4710” manufactured by DIC Corporation), naphthol type epoxy resin (“ESN-475V” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), epoxy having a butadiene structure Resin ("PB-3600" manufactured by Daicel Chemical Industries, Ltd.) Epoxy resins having a phenyl structure (“NC3000H”, “NC3000L”, “NC3100” manufactured by Nippon Kayaku Co., Ltd., “YX4000”, “YX4000H”, “YX4000HK”, “YL6121” manufactured by Mitsubishi Chemical Corporation), dihydro Anthracene type epoxy resin ("YX8800" manufactured by Mitsubishi Chemical Corporation), naphthylene ether type epoxy resin ("EXA-7310", "EXA-7311", "EXA-7311L", "EXA7311-G3" manufactured by DIC Corporation) And dicyclopentadiene type epoxy resin (“HP-7200H” manufactured by DIC Corporation).
エポキシ樹脂は2種以上を併用してもよいが、1分子中に2個以上のエポキシ基を有するエポキシ樹脂を含有するのが好ましい。なかでも、1分子中に2個以上のエポキシ基を有し、温度20℃で液状の芳香族系エポキシ樹脂(以下、「液状エポキシ樹脂」という。)と、1分子中に3個以上のエポキシ基を有し、温度20℃で固体状の芳香族系エポキシ樹脂(以下、「固体状エポキシ樹脂」という。)を含有する態様がより好ましい。なお、本発明でいう芳香族系エポキシ樹脂とは、その分子内に芳香環構造を有するエポキシ樹脂を意味する。エポキシ樹脂として、液状エポキシ樹脂と固体状エポキシ樹脂を併用する場合、樹脂組成物を接着フィルム形態で使用する場合に適度な可撓性を有する点や樹脂組成物の硬化物が適度な破断強度を有する点から、その配合割合(液状エポキシ樹脂:固体状エポキシ樹脂)は質量比で1:0.1〜1:5の範囲が好ましく、1:0.3〜1:4の範囲がより好ましく、1:0.6〜1:3の範囲が更に好ましい。 Two or more epoxy resins may be used in combination, but it is preferable to contain an epoxy resin having two or more epoxy groups in one molecule. Among them, an aromatic epoxy resin having two or more epoxy groups in one molecule and being liquid at a temperature of 20 ° C. (hereinafter referred to as “liquid epoxy resin”) and three or more epoxy in one molecule. An embodiment containing a group and containing a solid aromatic epoxy resin (hereinafter referred to as “solid epoxy resin”) at a temperature of 20 ° C. is more preferable. In addition, the aromatic epoxy resin as used in the field of this invention means the epoxy resin which has an aromatic ring structure in the molecule | numerator. When using a liquid epoxy resin and a solid epoxy resin together as an epoxy resin, when using the resin composition in the form of an adhesive film, the resin composition has an appropriate flexibility and the cured product of the resin composition has an appropriate breaking strength. From the point of having, the mixture ratio (liquid epoxy resin: solid epoxy resin) is preferably in the range of 1: 0.1 to 1: 5 by mass ratio, more preferably in the range of 1: 0.3 to 1: 4. A range of 1: 0.6 to 1: 3 is more preferable.
液状エポキシ樹脂としては、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、及びナフタレン型エポキシ樹脂が好ましく、ビスフェノールA型エポキシ樹脂、及びナフタレン型エポキシ樹脂がより好ましい。これらは1種または2種以上組み合わせて使用してもよい。 As the liquid epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, and naphthalene type epoxy resin are preferable, and bisphenol A type epoxy resin and naphthalene type epoxy resin are more preferable. You may use these 1 type or in combination of 2 or more types.
固体状エポキシ樹脂としては、4官能ナフタレン型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、トリスフェノールエポキシ樹脂、ナフトールノボラックエポキシ樹脂、ビフェニル型エポキシ樹脂、又はナフチレンエーテル型エポキシ樹脂が好ましく、4官能ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂、及びナフチレンエーテル型エポキシ樹脂がより好ましい。これらは1種または2種以上組み合わせて使用してもよい。 Examples of solid epoxy resins include tetrafunctional naphthalene type epoxy resins, cresol novolac type epoxy resins, dicyclopentadiene type epoxy resins, trisphenol epoxy resins, naphthol novolac epoxy resins, biphenyl type epoxy resins, and naphthylene ether type epoxy resins. A tetrafunctional naphthalene type epoxy resin, a biphenyl type epoxy resin, and a naphthylene ether type epoxy resin are more preferable. You may use these 1 type or in combination of 2 or more types.
本発明の樹脂組成物においては、樹脂組成物の硬化物の機械強度や耐水性を向上させるという観点から、樹脂組成物中の不揮発成分を100質量%とした場合、エポキシ樹脂の含有量は3〜35質量%であるのが好ましく、5〜30質量%であるのがより好ましく、10〜20質量%であるのが更に好ましい。 In the resin composition of the present invention, from the viewpoint of improving the mechanical strength and water resistance of the cured product of the resin composition, the content of the epoxy resin is 3 when the nonvolatile component in the resin composition is 100% by mass. It is preferable that it is -35 mass%, It is more preferable that it is 5-30 mass%, It is still more preferable that it is 10-20 mass%.
エポキシ樹脂のエポキシ当量は、好ましくは50〜3000、より好ましくは80〜2000、更に好ましくは110〜1000である。この範囲となることで、硬化物の架橋密度が十分となり耐熱性に優れた絶縁層をもたらす。なお、エポキシ当量は、JIS K7236に従って測定することができ、1当量のエポキシ基を含む樹脂の質量である。 The epoxy equivalent of the epoxy resin is preferably 50 to 3000, more preferably 80 to 2000, and still more preferably 110 to 1000. By being in this range, the cured product has a sufficient cross-linking density, resulting in an insulating layer having excellent heat resistance. The epoxy equivalent can be measured according to JIS K7236, and is the mass of a resin containing 1 equivalent of an epoxy group.
<(B)活性エステル化合物>
活性エステル化合物としては、特に制限はないが、一般にフェノールエステル類、チオフェノールエステル類、N−ヒドロキシアミンエステル類、複素環ヒドロキシ化合物のエステル類等の反応活性の高いエステル基を1分子中に2個以上有する化合物が好ましく用いられる。当該活性エステル系化合物は、カルボン酸化合物及び/又はチオカルボン酸化合物とヒドロキシ化合物及び/又はチオール化合物との縮合反応によって得られるものが好ましい。特に耐熱性向上の観点から、カルボン酸化合物とヒドロキシ化合物とから得られる活性エステル化合物が好ましく、カルボン酸化合物とフェノール化合物及び/又はナフトール化合物とから得られる活性エステル系硬化剤がより好ましい。カルボン酸化合物としては、例えば安息香酸、酢酸、コハク酸、マレイン酸、イタコン酸、フタル酸、イソフタル酸、テレフタル酸、ピロメリット酸等が挙げられる。フェノール化合物又はナフトール化合物としては、例えばハイドロキノン、レゾルシン、ビスフェノールA、ビスフェノールF、ビスフェノールS、フェノールフタリン、メチル化ビスフェノールA、メチル化ビスフェノールF、メチル化ビスフェノールS、フェノール、o−クレゾール、m−クレゾール、p−クレゾール、カテコール、α−ナフトール、β−ナフトール、1,5−ジヒドロキシナフタレン、1,6−ジヒドロキシナフタレン、2,6−ジヒドロキシナフタレン、ジヒドロキシベンゾフェノン、トリヒドロキシベンゾフェノン、テトラヒドロキシベンゾフェノン、フロログルシン、ベンゼントリオール、ナフタレン構造を含む活性エステル化合物、ジシクロペンタジエン型のジフェノール化合物(ポリシクロペンタジエン型のジフェノール化合物)、フェノールノボラック等が挙げられる。活性エステル化合物は1種又は2種以上を使用することができる。活性エステル化合物としては、特開2004−277460号公報に開示されている活性エステル化合物を用いてもよく、また市販のものを用いることもできる。市販されている活性エステル化合物としては、ジシクロペンタジエン型ジフェノール縮合構造を含む活性エステル化合物、ナフタレン構造を含む活性エステル化合物、フェノールノボラックのアセチル化物を含む活性エステル化合物、フェノールノボラックのベンゾイル化物を含む活性エステル化合物等が好ましく、なかでもジシクロペンタジエン型ジフェノール縮合構造を含む活性エステル化合物がより好ましい。具体的には、ジシクロペンタジエン型ジフェノール縮合構造を含む活性エステル化合物としてEXB9451、EXB9460、HPC8000−65T(DIC(株)製、活性基当量約223)、フェノールノボラックのアセチル化物を含む活性エステル化合物としてDC808(三菱化学(株)製、活性基当量約149)、フェノールノボラックのベンゾイル化物を含む活性エステル化合物としてYLH1026(三菱化学(株)製、活性基当量約200)、YLH1030(三菱化学(株)製、活性基当量約201)、YLH1048(三菱化学(株)製、活性基当量約245)、等が挙げられ、なかでもHPC−8000−65Tがワニスの保存安定性、硬化物の熱膨張率、疎水性の高い骨格であるという観点から好ましい。
<(B) Active ester compound>
Although there is no restriction | limiting in particular as an active ester compound, Generally 2 ester groups with high reaction activity, such as phenol ester, thiophenol ester, N-hydroxyamine ester, ester of a heterocyclic hydroxy compound, are generally contained in 1 molecule. A compound having at least one is preferably used. The active ester compound is preferably obtained by a condensation reaction between a carboxylic acid compound and / or a thiocarboxylic acid compound and a hydroxy compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester compound obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester curing agent obtained from a carboxylic acid compound and a phenol compound and / or a naphthol compound is more preferred. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthaline, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, and m-cresol. P-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucin, benzene Triol, active ester compound containing naphthalene structure, dicyclopentadiene type diphenol compound (polycyclopentadiene type Diphenol compound), phenol novolac and the like. The active ester compound can use 1 type (s) or 2 or more types. As an active ester compound, the active ester compound currently disclosed by Unexamined-Japanese-Patent No. 2004-277460 may be used, and a commercially available thing can also be used. Commercially available active ester compounds include active ester compounds containing a dicyclopentadiene-type diphenol condensation structure, active ester compounds containing a naphthalene structure, active ester compounds containing an acetylated product of phenol novolac, and benzoylated products of phenol novolac. An active ester compound or the like is preferable, and an active ester compound containing a dicyclopentadiene type diphenol condensation structure is more preferable. Specifically, as an active ester compound containing a dicyclopentadiene-type diphenol condensation structure, EXB9451, EXB9460, HPC8000-65T (manufactured by DIC Corporation, active group equivalent of about 223), an active ester compound containing an acetylated product of phenol novolac DC808 (Mitsubishi Chemical Corporation, active group equivalent of about 149), YLH1026 (Mitsubishi Chemical Corporation, active group equivalent of about 200), YLH1030 (Mitsubishi Chemical Co., Ltd.) as an active ester compound containing a benzoylated phenol novolak ), Active group equivalent of about 201), YLH1048 (manufactured by Mitsubishi Chemical Co., Ltd., active group equivalent of about 245), and the like. Among them, HPC-8000-65T is storage stability of varnish, thermal expansion of cured product From the viewpoint that the skeleton has a high rate and high hydrophobicity.
活性エステル化合物は、エポキシ樹脂の遊離の水酸基と反応してエステル結合を生成するため、疎水性の高い硬化物を形成しやすく、粗化処理時に絶縁層表面が粗化され過ぎることを防ぐことができ、ガラス繊維を用いてもガラス繊維が層の表面から露出せず、低い表面粗度と高いメッキピール強度を実現できる。一方、活性エステル化合物を配合していない場合は、粗化処理時に表層の硬化物が粗化されやすく、活性エステル化合物を配合した場合に比べ、ガラス繊維が層の表面から露出しやすいことから、表面粗度が高くなり、メッキピール強度が低くなりやすい。 Since the active ester compound reacts with the free hydroxyl group of the epoxy resin to form an ester bond, it is easy to form a highly hydrophobic cured product and prevents the insulating layer surface from being too rough during the roughening treatment. Even if glass fiber is used, the glass fiber is not exposed from the surface of the layer, and low surface roughness and high plating peel strength can be realized. On the other hand, when the active ester compound is not blended, the cured product of the surface layer is easily roughened during the roughening treatment, and the glass fibers are more easily exposed from the surface of the layer than when the active ester compound is blended. Surface roughness increases and plating peel strength tends to decrease.
ジシクロペンタジエン型ジフェノール縮合構造を含む活性エステル化合物として、より具体的には下式の化合物が挙げられる。 More specifically, examples of the active ester compound containing a dicyclopentadiene type diphenol condensation structure include compounds represented by the following formula.
(式中、Rはフェニル基、ナフチル基であり、kは0又は1を表し、nは繰り返し単位の平均で0.05〜2.5である。) (In the formula, R is a phenyl group or a naphthyl group, k represents 0 or 1, and n is 0.05 to 2.5 on the average of repeating units.)
誘電正接を低下させ、耐熱性を向上させるという観点から、Rはナフチル基が好ましく、一方、kは0が好ましく、また、nは0.25〜1.5が好ましい。 From the viewpoint of reducing the dielectric loss tangent and improving the heat resistance, R is preferably a naphthyl group, while k is preferably 0 and n is preferably 0.25 to 1.5.
活性エステル化合物の含有量は、耐熱性の向上、疎水性を高め過ぎず良好なメッキピール強度を得るという観点から、樹脂組成物中の不揮発成分を100質量%とした場合、40質量%以下が好ましく、30質量%以下がより好ましく、20質量%以下が更により好ましく、15質量%以下が更に一層好ましい。一方、ラミネート性の向上、ガラス繊維の突出しを抑え硬化物表面を低粗度にするという観点から、活性エステル化合物の含有量は、樹脂組成物中の不揮発成分を100質量%とした場合、0.5質量%以上が好ましく、1質量%以上がより好ましく、1.5質量%以上が更により好ましく、2質量%以上が更に一層好ましい。 The content of the active ester compound is 40% by mass or less when the non-volatile component in the resin composition is 100% by mass from the viewpoint of improving heat resistance and obtaining good plating peel strength without excessively increasing hydrophobicity. Preferably, 30 mass% or less is more preferable, 20 mass% or less is still more preferable, and 15 mass% or less is still more preferable. On the other hand, from the viewpoint of improving the laminating property and suppressing the protrusion of the glass fiber to reduce the surface of the cured product, the content of the active ester compound is 0 when the nonvolatile component in the resin composition is 100% by mass. 0.5 mass% or more is preferable, 1 mass% or more is more preferable, 1.5 mass% or more is still more preferable, and 2 mass% or more is still more preferable.
また、(A)エポキシ樹脂のエポキシ基数を1とした場合、樹脂組成物の機械特性を向上させるという点から、(B)活性エステル化合物の反応基数は、0.2〜2が好ましく、0.3〜1.5がより好ましく、0.4〜1が更に好ましい。ここで、「エポキシ樹脂のエポキシ基数」とは、樹脂組成物中に存在する各エポキシ樹脂の固形分質量をエポキシ当量で除した値をすべてのエポキシ樹脂について合計した値である。また、「反応基」とはエポキシ基と反応することができる官能基を意味し、「活性エステル化合物の反応基数」とは、樹脂組成物中に存在する活性エステル化合物の固形分質量を反応基当量で除した値を全て合計した値である。 In addition, when the number of epoxy groups of (A) the epoxy resin is 1, the number of reactive groups of the (B) active ester compound is preferably 0.2 to 2 in terms of improving the mechanical properties of the resin composition. 3-1.5 are more preferable and 0.4-1 are still more preferable. Here, “the number of epoxy groups of the epoxy resin” is a value obtained by totaling the values obtained by dividing the solid mass of each epoxy resin present in the resin composition by the epoxy equivalent for all epoxy resins. The “reactive group” means a functional group capable of reacting with an epoxy group, and the “reactive group number of the active ester compound” means the solid content mass of the active ester compound present in the resin composition. This is the total value of all values divided by equivalents.
<(C)球状シリカ>
球状シリカは1種単独で用いてもよく、2種以上を併用してもよい。球状シリカは、熱膨張率を低下させるという点から球状溶融シリカが好ましい。市販されている球状溶融シリカとして、(株)アドマテックス製「SO−C2」、「SO−C1」が挙げられる。
<(C) Spherical silica>
Spherical silica may be used alone or in combination of two or more. Spherical silica is preferably spherical fused silica from the viewpoint of reducing the thermal expansion coefficient. Examples of commercially available spherical fused silica include “SO-C2” and “SO-C1” manufactured by Admatechs.
球状シリカの平均粒径は、0.01μm〜5μmの範囲が好ましく、0.05μm〜3μmの範囲がより好ましく、0.1μm〜1μmの範囲が更に好ましく、0.3μm〜0.8μmが更により好ましい。球状シリカの平均粒径は、ミー(Mie)散乱理論に基づくレーザー回折・散乱法により測定することができる。具体的には、レーザー回折散乱式粒度分布測定装置により、球状シリカの粒度分布を体積基準で作成し、そのメディアン径を平均粒径とすることで測定することができる。測定サンプルは、球状シリカを超音波により水中に分散させたものを好ましく使用することができる。レーザー回折散乱式粒度分布測定装置としては、株式会社堀場製作所製LA−500等を使用することができる。 The average particle diameter of the spherical silica is preferably in the range of 0.01 μm to 5 μm, more preferably in the range of 0.05 μm to 3 μm, still more preferably in the range of 0.1 μm to 1 μm, and even more preferably in the range of 0.3 μm to 0.8 μm. preferable. The average particle diameter of the spherical silica can be measured by a laser diffraction / scattering method based on the Mie scattering theory. Specifically, the particle size distribution of spherical silica is prepared on a volume basis by a laser diffraction / scattering particle size distribution measuring device, and the median diameter can be measured as an average particle size. As the measurement sample, spherical silica dispersed in water by ultrasonic waves can be preferably used. As a laser diffraction scattering type particle size distribution measuring apparatus, LA-500 manufactured by Horiba, Ltd. can be used.
球状シリカの含有量は、樹脂組成物中の不揮発成分を100質量%とした場合、得られる絶縁層の熱膨張率を低下させる観点から、20質量%以上が好ましく、40質量%以上がより好ましく、50質量%以上が更に好ましく、60質量%以上、65質量%以上、70質量%以上が更に一層好ましい。一方、球状シリカの含有量の上限は、樹脂組成物中の不揮発性成分を100質量%とした場合、得られる絶縁層の機械強度の観点から、好ましくは90質量%以下、より好ましくは80質量%以下である。 The content of the spherical silica is preferably 20% by mass or more, more preferably 40% by mass or more from the viewpoint of reducing the thermal expansion coefficient of the obtained insulating layer when the nonvolatile component in the resin composition is 100% by mass. 50 mass% or more is still more preferable, 60 mass% or more, 65 mass% or more, 70 mass% or more is still more preferable. On the other hand, the upper limit of the content of the spherical silica is preferably 90% by mass or less, more preferably 80% by mass, from the viewpoint of the mechanical strength of the obtained insulating layer when the nonvolatile component in the resin composition is 100% by mass. % Or less.
球状シリカは、耐湿性向上のため、アミノシラン系カップリング剤、エポキシシラン系カップリング剤、メルカプトシラン系カップリング剤、シラン系カップリング剤、オルガノシラザン化合物、チタネート系カップリング剤などの1種以上の表面処理剤で処理されていることが好ましい。表面処理剤の市販品としては、例えば、信越化学工業(株)製「KBM403」(3−グリシドキシプロピルトリメトキシシラン)、信越化学工業(株)製「KBM803」(3−メルカプトプロピルトリメトキシシラン)、信越化学工業(株)製「KBE903」(3−アミノプロピルトリエトキシシラン)、信越化学工業(株)製「KBM573」(N−フェニル−3−アミノプロピルトリメトキシシラン)、信越化学工業(株)製「SZ−31」(ヘキサメチルジシラザン)等が挙げられる。 Spherical silica is one or more of aminosilane coupling agent, epoxysilane coupling agent, mercaptosilane coupling agent, silane coupling agent, organosilazane compound, titanate coupling agent and the like for improving moisture resistance. It is preferable that the surface treatment agent is used. Examples of commercially available surface treatment agents include “KBM403” (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., and “KBM803” (3-mercaptopropyltrimethoxy manufactured by Shin-Etsu Chemical Co., Ltd.). Silane), Shin-Etsu Chemical "KBE903" (3-aminopropyltriethoxysilane), Shin-Etsu Chemical "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane), Shin-Etsu Chemical "SZ-31" (Hexamethyldisilazane) manufactured by Co., Ltd.
また、表面処理剤で表面処理された球状シリカは、溶剤(例えば、メチルエチルケトン(MEK))により洗浄処理した後に、球状シリカの単位表面積当たりのカーボン量を測定することができる。具体的には、溶剤として十分な量のMEKを表面処理剤で表面処理された無機充填材に加えて、25℃で5分間超音波洗浄する。上澄液を除去し、固形分を乾燥させた後、カーボン分析計を用いて無機充填材の単位表面積当たりのカーボン量を測定することができる。カーボン分析計としては、堀場製作所製「EMIA−320V」等を使用することができる。 Further, the spherical silica surface-treated with the surface treatment agent can be measured for the amount of carbon per unit surface area of the spherical silica after washing with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler surface-treated with the surface treatment agent and ultrasonically cleaned at 25 ° C. for 5 minutes. After removing the supernatant and drying the solid, the carbon amount per unit surface area of the inorganic filler can be measured using a carbon analyzer. As the carbon analyzer, “EMIA-320V” manufactured by HORIBA, Ltd. can be used.
球状シリカの単位表面積当たりのカーボン量は、球状シリカの分散性向上の観点から、0.02mg/m2以上が好ましく、0.1mg/m2以上がより好ましく、0.2mg/m2以上が更に好ましい。一方、樹脂ワニスの溶融粘度やフィルム形態での溶融粘度の上昇を防止する観点から、1mg/m2以下が好ましく、0.8mg/m2以下がより好ましく、0.5mg/m2以下が更に好ましい。 Carbon content per unit surface area of the spherical silica, from the viewpoint of improving the dispersibility of the spherical silica is preferably 0.02 mg / m 2 or more, 0.1 mg / m 2 or more preferably, 0.2 mg / m 2 or more Further preferred. On the other hand, 1 mg / m 2 or less is preferable, 0.8 mg / m 2 or less is more preferable, and 0.5 mg / m 2 or less is more preferable from the viewpoint of preventing an increase in the melt viscosity of the resin varnish or the film form. preferable.
<(D)ガラス繊維>
ガラス繊維は1種単独で用いてもよく、2種以上を併用してもよい。市販されているガラス繊維の例としては、チョップドストランド、ミルドファイバーのガラス繊維等が挙げられる。
<(D) Glass fiber>
A glass fiber may be used individually by 1 type, and may use 2 or more types together. Examples of commercially available glass fibers include chopped strands and milled fiber glass fibers.
ガラス繊維の平均繊維径は、表面粗さを抑える観点から、好ましくは13μm以下、より好ましくは10μm以下、更により好ましくは8μm以下、なお更により好ましくは6μm以下、特に好ましくは4μm以下、更に特に好ましくは2μm以下である。下限は特に限定されないが、通常、0.5μm以上とし得る。 The average fiber diameter of the glass fiber is preferably 13 μm or less, more preferably 10 μm or less, even more preferably 8 μm or less, still more preferably 6 μm or less, particularly preferably 4 μm or less, and more particularly from the viewpoint of suppressing the surface roughness. Preferably it is 2 micrometers or less. Although a minimum is not specifically limited, Usually, it can be 0.5 micrometer or more.
ガラス繊維の平均繊維長は、熱膨張率を低くするという観点から、好ましくは5μm以上、より好ましくは10μm以上、更により好ましくは20μm以上、なお更により好ましくは30μm以上であり、ワニスの相溶性を向上させる観点から、好ましくは100μm以下、より好ましくは80μm以下、更により好ましくは60μm以下、なお更により好ましくは50μm以下である。 The average fiber length of the glass fiber is preferably 5 μm or more, more preferably 10 μm or more, even more preferably 20 μm or more, and still more preferably 30 μm or more, from the viewpoint of lowering the coefficient of thermal expansion. From the viewpoint of improving the thickness, it is preferably 100 μm or less, more preferably 80 μm or less, still more preferably 60 μm or less, and even more preferably 50 μm or less.
本発明の一実施形態では、(D)ガラス繊維の平均繊維径が13μm以下であり、平均繊維長が100μm以下であるのが好ましい。 In one Embodiment of this invention, it is preferable that the average fiber diameter of (D) glass fiber is 13 micrometers or less, and an average fiber length is 100 micrometers or less.
ガラス繊維の繊維径及び平均繊維長は、例えば、光学顕微鏡又は電子顕微鏡などを用いて測定することができる。 The fiber diameter and average fiber length of the glass fiber can be measured using, for example, an optical microscope or an electron microscope.
ガラス繊維の含有量は、樹脂組成物中の不揮発成分を100質量%とした場合、熱膨張率を低くするという観点から、2質量%以上が好ましく、5質量%以上がより好ましく、10質量%以上が更に好ましい。また、ワニスの相溶性を向上させるという観点から、60質量%以下が好ましく、50質量%以下がより好ましく、40質量%以下が更により好ましく、30質量%以下が特に好ましい。 The content of the glass fiber is preferably 2% by mass or more, more preferably 5% by mass or more, more preferably 10% by mass from the viewpoint of lowering the thermal expansion coefficient when the nonvolatile component in the resin composition is 100% by mass. The above is more preferable. Moreover, from a viewpoint of improving the compatibility of a varnish, 60 mass% or less is preferable, 50 mass% or less is more preferable, 40 mass% or less is still more preferable, 30 mass% or less is especially preferable.
(C)球状シリカと(D)ガラス繊維との合計の含有量は、樹脂組成物中の不揮発成分を100質量%とした場合、熱膨張率を低くするという観点から、50質量%以上が好ましく、55質量%以上がより好ましく、60質量%以上が更に好ましく、65%以上が特に好ましい。また、ワニスの相溶性を向上させるという観点から、85質量%以下が好ましく、80質量%以下がより好ましい。 The total content of (C) spherical silica and (D) glass fiber is preferably 50% by mass or more from the viewpoint of lowering the coefficient of thermal expansion when the nonvolatile component in the resin composition is 100% by mass. 55 mass% or more is more preferable, 60 mass% or more is still more preferable, and 65% or more is especially preferable. Moreover, from a viewpoint of improving the compatibility of a varnish, 85 mass% or less is preferable and 80 mass% or less is more preferable.
本発明の一実施形態では、樹脂組成物中の不揮発成分を100質量%とした場合に、(C)球状シリカと(D)ガラス繊維との合計の含有量が50〜85質量%であり、(D)ガラス繊維の含有量が2〜60質量%であるのが好ましい。 In one embodiment of the present invention, when the nonvolatile component in the resin composition is 100% by mass, the total content of (C) spherical silica and (D) glass fiber is 50 to 85% by mass, (D) It is preferable that content of glass fiber is 2-60 mass%.
本発明の別の実施形態では、樹脂組成物中の不揮発成分を100質量%とした場合に、(C)球状シリカと(D)ガラス繊維との合計の含有量が50〜80質量%であり、(D)ガラス繊維の含有量が10〜50質量%であるのが好ましい。 In another embodiment of the present invention, when the nonvolatile component in the resin composition is 100% by mass, the total content of (C) spherical silica and (D) glass fiber is 50 to 80% by mass. (D) It is preferable that content of glass fiber is 10-50 mass%.
本発明の一実施形態では、樹脂組成物の硬化物の25℃から150℃までの平均線熱膨張率は25ppm以下であることが好ましく、20ppm以下であることが好ましく、18ppm以下であることが更に好ましい。下限値に制限はないが、一般的に4ppm以上となる。 In one embodiment of the present invention, the average linear thermal expansion coefficient from 25 ° C. to 150 ° C. of the cured product of the resin composition is preferably 25 ppm or less, preferably 20 ppm or less, and 18 ppm or less. Further preferred. Although there is no restriction | limiting in a lower limit, generally it will be 4 ppm or more.
本発明の一実施形態では、部品実装時の回路と絶縁層のCTEミスマッチを軽減するという観点から、樹脂組成物の硬化物の150℃から240℃までの平均線熱膨張率は50ppm以下であることが好ましく、40ppm以下であることが好ましく、30ppm以下であることが更に好ましい。下限値に制限はないが、一般的に10ppm以上となる。 In one embodiment of the present invention, the average linear thermal expansion coefficient from 150 ° C. to 240 ° C. of the cured resin composition is 50 ppm or less from the viewpoint of reducing CTE mismatch between the circuit and the insulating layer at the time of component mounting. It is preferably 40 ppm or less, more preferably 30 ppm or less. Although there is no restriction | limiting in a lower limit, generally it will be 10 ppm or more.
線熱膨張率は、(株)リガク製熱機械分析装置(Thermo Plus TMA8310)を使用して、引張加重法で熱機械分析を行うことで測定することができる。 The linear thermal expansion coefficient can be measured by performing thermomechanical analysis by a tensile load method using a thermomechanical analyzer manufactured by Rigaku Corporation (Thermo Plus TMA8310).
<(E)その他の成分>
本発明の樹脂組成物には、本発明の効果を達成できる限り、その他の成分を含めてもよい。
<(E) Other ingredients>
The resin composition of the present invention may contain other components as long as the effects of the present invention can be achieved.
本発明の樹脂組成物には、以下のその他の成分、例えば、熱可塑性樹脂;シアネートエステル系硬化剤、フェノール系硬化剤、ナフトール系硬化剤、ベンゾオキサジン系硬化剤等の硬化剤;硬化促進剤;難燃剤;ゴム粒子;等の添加剤を、必要に応じて1種又は2種以上、更に含めることができる。 The resin composition of the present invention includes the following other components such as a thermoplastic resin; a curing agent such as a cyanate ester curing agent, a phenol curing agent, a naphthol curing agent, and a benzoxazine curing agent; a curing accelerator. One or more additives such as flame retardant, rubber particles, and the like may be further included as necessary.
−熱可塑性樹脂−
熱可塑性樹脂としては、例えば、フェノキシ樹脂、ポリビニルアセタール樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリエーテルスルホン樹脂、及びポリスルホン樹脂等が挙げられる。熱可塑性樹脂は1種単独で用いてもよく、又は2種以上を併用してもよい。
-Thermoplastic resin-
Examples of the thermoplastic resin include phenoxy resin, polyvinyl acetal resin, polyimide resin, polyamideimide resin, polyethersulfone resin, and polysulfone resin. A thermoplastic resin may be used individually by 1 type, or may use 2 or more types together.
熱可塑性樹脂のポリスチレン換算の重量平均分子量は8,000〜70,000の範囲が好ましく、10,000〜60,000の範囲がより好ましく、20,000〜60,000の範囲が更により好ましい。熱可塑性樹脂のポリスチレン換算の重量平均分子量は、ゲルパーミエーションクロマトグラフィー(GPC)法で測定される。具体的には、熱可塑性樹脂のポリスチレン換算の重量平均分子量は、測定装置として(株)島津製作所製LC−9A/RID−6Aを、カラムとして昭和電工(株)製Shodex K−800P/K−804L/K−804Lを、移動相としてクロロホルム等を用いて、カラム温度40℃にて測定し、標準ポリスチレンの検量線を用いて算出することができる。 The weight average molecular weight in terms of polystyrene of the thermoplastic resin is preferably in the range of 8,000 to 70,000, more preferably in the range of 10,000 to 60,000, and still more preferably in the range of 20,000 to 60,000. The weight average molecular weight in terms of polystyrene of the thermoplastic resin is measured by a gel permeation chromatography (GPC) method. Specifically, the polystyrene-reduced weight average molecular weight of the thermoplastic resin is LC-9A / RID-6A manufactured by Shimadzu Corporation as a measuring device, and Shodex K-800P / K- manufactured by Showa Denko KK as a column. 804L / K-804L can be measured at a column temperature of 40 ° C. using chloroform or the like as a mobile phase, and can be calculated using a standard polystyrene calibration curve.
フェノキシ樹脂としては、例えば、ビスフェノールA骨格、ビスフェノールF骨格、ビスフェノールS骨格、ビスフェノールアセトフェノン骨格、ノボラック骨格、ビフェニル骨格、フルオレン骨格、ジシクロペンタジエン骨格、ノルボルネン骨格、ナフタレン骨格、アントラセン骨格、アダマンタン骨格、テルペン骨格、及びトリメチルシクロヘキサン骨格からなる群から選択される1種以上の骨格を有するフェノキシ樹脂が挙げられる。フェノキシ樹脂の末端は、フェノール性水酸基、エポキシ基等のいずれの官能基でもよい。フェノキシ樹脂は1種単独で用いてもよく、又は2種以上を併用してもよい。フェノキシ樹脂の具体例としては、三菱化学(株)製の「1256」及び「4250」(いずれもビスフェノールA骨格含有フェノキシ樹脂)、「YX8100」(ビスフェノールS骨格含有フェノキシ樹脂)、及び「YX6954」(ビスフェノールアセトフェノン骨格含有フェノキシ樹脂)が挙げられ、その他にも、新日鉄住金化学(株)製の「FX280」、「FX293」及び「FX293L」、三菱化学(株)製の「YX7553」、「YL6794」、「YL7213」、「YL7290」及び「YL7482」等が挙げられる。 Examples of the phenoxy resin include bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenolacetophenone skeleton, novolac skeleton, biphenyl skeleton, fluorene skeleton, dicyclopentadiene skeleton, norbornene skeleton, naphthalene skeleton, anthracene skeleton, adamantane skeleton, terpene Examples thereof include phenoxy resins having a skeleton and one or more skeletons selected from the group consisting of a trimethylcyclohexane skeleton. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. A phenoxy resin may be used individually by 1 type, or may use 2 or more types together. Specific examples of the phenoxy resin include “1256” and “4250” (both bisphenol A skeleton-containing phenoxy resin), “YX8100” (bisphenol S skeleton-containing phenoxy resin), and “YX6954” (manufactured by Mitsubishi Chemical Corporation). In addition, “FX280”, “FX293” and “FX293L” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., “YX7553”, “YL6794” manufactured by Mitsubishi Chemical Co., Ltd., "YL7213", "YL7290", "YL7482", etc. are mentioned.
ポリビニルアセタール樹脂の具体例としては、電気化学工業(株)製の電化ブチラール4000−2、5000−A、6000−C、6000−EP、積水化学工業(株)製のエスレックBHシリーズ、BXシリーズ、KSシリーズ、BLシリーズ、BMシリーズ等が挙げられる。 Specific examples of the polyvinyl acetal resin include electric butyral 4000-2, 5000-A, 6000-C, and 6000-EP manufactured by Denki Kagaku Kogyo Co., Ltd., and ESREC BH series and BX series manufactured by Sekisui Chemical Co. KS series, BL series, BM series, etc. are mentioned.
ポリイミド樹脂の具体例としては、新日本理化(株)製の「リカコートSN20」及び「リカコートPN20」が挙げられる。ポリイミド樹脂の具体例としてはまた、2官能性ヒドロキシル基末端ポリブタジエン、ジイソシアネート化合物及び四塩基酸無水物を反応させて得られる線状ポリイミド(特開2006−37083号公報記載のポリイミド)、ポリシロキサン骨格含有ポリイミド(特開2002−12667号公報及び特開2000−319386号公報等に記載のポリイミド)等の変性ポリイミドが挙げられる。 Specific examples of the polyimide resin include “Rika Coat SN20” and “Rika Coat PN20” manufactured by Shin Nippon Rika Co., Ltd. Specific examples of the polyimide resin include linear polyimide obtained by reacting a bifunctional hydroxyl group-terminated polybutadiene, a diisocyanate compound and a tetrabasic acid anhydride (polyimide described in JP-A-2006-37083), a polysiloxane skeleton. Examples thereof include modified polyimides such as containing polyimide (polyimides described in JP-A Nos. 2002-12667 and 2000-319386).
ポリアミドイミド樹脂の具体例としては、東洋紡績(株)製の「バイロマックスHR11NN」及び「バイロマックスHR16NN」が挙げられる。ポリアミドイミド樹脂の具体例としてはまた、日立化成工業(株)製のポリシロキサン骨格含有ポリアミドイミド「KS9100」、「KS9300」等の変性ポリアミドイミドが挙げられる。 Specific examples of the polyamide-imide resin include “Bilomax HR11NN” and “Bilomax HR16NN” manufactured by Toyobo Co., Ltd. Specific examples of the polyamideimide resin also include modified polyamideimides such as polysiloxane skeleton-containing polyamideimides “KS9100” and “KS9300” manufactured by Hitachi Chemical Co., Ltd.
ポリエーテルスルホン樹脂の具体例としては、住友化学(株)製の「PES5003P」等が挙げられる。 Specific examples of the polyethersulfone resin include “PES5003P” manufactured by Sumitomo Chemical Co., Ltd.
ポリスルホン樹脂の具体例としては、ソルベイアドバンストポリマーズ(株)製のポリスルホン「P1700」、「P3500」等が挙げられる。 Specific examples of the polysulfone resin include polysulfone “P1700” and “P3500” manufactured by Solvay Advanced Polymers Co., Ltd.
熱可塑性樹脂の含有量としては、樹脂組成物中の不揮発成分を100質量%とした場合に、例えば、0.01〜2質量%が挙げられる。 As content of a thermoplastic resin, when the non-volatile component in a resin composition is 100 mass%, 0.01-2 mass% is mentioned, for example.
−シアネートエステル系硬化剤、フェノール系硬化剤、ナフトール系硬化剤、ベンゾオキサジン系硬化剤等の硬化剤−
本発明の樹脂組成物においては、本発明の効果を奏する限り、活性エステル化合物以外に、シアネートエステル系硬化剤、フェノール系硬化剤、ナフトール系硬化剤、ベンゾオキサジン系硬化剤等の硬化剤を含めてもよい。
-Curing agents such as cyanate ester curing agents, phenolic curing agents, naphthol curing agents, benzoxazine curing agents-
In the resin composition of the present invention, as long as the effects of the present invention are exhibited, in addition to the active ester compound, a curing agent such as a cyanate ester curing agent, a phenol curing agent, a naphthol curing agent, or a benzoxazine curing agent is included. May be.
シアネートエステル系硬化剤としては、例えば、ビスフェノールAジシアネート、ポリフェノールシアネート(オリゴ(3−メチレン−1,5−フェニレンシアネート))、4,4’−メチレンビス(2,6−ジメチルフェニルシアネート)、4,4’−エチリデンジフェニルジシアネート、ヘキサフルオロビスフェノールAジシアネート、2,2−ビス(4−シアネート)フェニルプロパン、1,1−ビス(4−シアネートフェニルメタン)、ビス(4−シアネート−3,5−ジメチルフェニル)メタン、1,3−ビス(4−シアネートフェニル−1−(メチルエチリデン))ベンゼン、ビス(4−シアネートフェニル)チオエーテル、及びビス(4−シアネートフェニル)エーテル等の2官能シアネート樹脂、フェノールノボラック及びクレゾールノボラック等から誘導される多官能シアネート樹脂、これらシアネート樹脂が一部トリアジン化したプレポリマーなどが挙げられる。シアネートエステル系硬化剤の好ましい具体例としては、ロンザジャパン(株)製の「PT30」及び「PT60」(いずれもフェノールノボラック型多官能シアネートエステル樹脂)、「BA230」(ビスフェノールAジシアネートの一部又は全部がトリアジン化され三量体となったプレポリマー)等が挙げられる。 Examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate (oligo (3-methylene-1,5-phenylene cyanate)), 4,4′-methylene bis (2,6-dimethylphenyl cyanate), 4, 4'-ethylidenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis (4-cyanate) phenylpropane, 1,1-bis (4-cyanatephenylmethane), bis (4-cyanate-3,5- Bifunctional cyanate resins such as dimethylphenyl) methane, 1,3-bis (4-cyanatephenyl-1- (methylethylidene)) benzene, bis (4-cyanatephenyl) thioether, and bis (4-cyanatephenyl) ether; Phenol novolac and Polyfunctional cyanate resin derived from resol novolac, these cyanate resins and partially triazine of prepolymer. Preferable specific examples of the cyanate ester curing agent include “PT30” and “PT60” (both phenol novolac polyfunctional cyanate ester resins) and “BA230” (part of bisphenol A dicyanate or And a prepolymer which is all triazine-modified into a trimer).
フェノール系硬化剤及びナフトール系硬化剤としては、耐熱性の観点から、ノボラック構造を有するフェノール系硬化剤、又はノボラック構造を有するナフトール系硬化剤が好ましい。また、導体層(回路配線)との密着性の観点から、含窒素フェノール系硬化剤が好ましく、トリアジン骨格含有フェノール系硬化剤がより好ましい。なかでも、耐熱性、及び導体層との密着性(剥離強度)の観点から、トリアジン骨格含有フェノールノボラック樹脂を硬化剤として用いることが好ましい。 As the phenol-based curing agent and the naphthol-based curing agent, a phenol-based curing agent having a novolak structure or a naphthol-based curing agent having a novolak structure is preferable from the viewpoint of heat resistance. Moreover, from a viewpoint of adhesiveness with a conductor layer (circuit wiring), a nitrogen-containing phenol type hardening | curing agent is preferable and a triazine frame | skeleton containing phenol type hardening | curing agent is more preferable. Especially, it is preferable to use a triazine skeleton containing phenol novolak resin as a hardening | curing agent from a viewpoint of heat resistance and adhesiveness (peeling strength) with a conductor layer.
フェノール系硬化剤及びナフトール系硬化剤の具体例としては、例えば、明和化成(株)製の「MEH−7700」、「MEH−7810」、「MEH−7851」、日本化薬(株)製の「NHN」、「CBN」、「GPH」、新日鉄住金化学(株)製の「SN170」、「SN180」、「SN190」、「SN475」、「SN485」、「SN495」、「SN375」、「SN395」、DIC(株)製の「LA7052」、「LA7054」、「LA3018」等が挙げられる。 Specific examples of the phenol-based curing agent and the naphthol-based curing agent include, for example, “MEH-7700”, “MEH-7810”, “MEH-7785” manufactured by Meiwa Kasei Co., Ltd., and Nippon Kayaku Co., Ltd. “NHN”, “CBN”, “GPH”, “SN170”, “SN180”, “SN190”, “SN475”, “SN485”, “SN495”, “SN375”, “SN395” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. ”,“ LA7052 ”,“ LA7054 ”,“ LA3018 ”manufactured by DIC Corporation, and the like.
ベンゾオキサジン系硬化剤の具体例としては、昭和高分子(株)製の「HFB2006M」、四国化成工業(株)製の「P−d」、「F−a」が挙げられる。 Specific examples of the benzoxazine-based curing agent include “HFB2006M” manufactured by Showa Polymer Co., Ltd., “Pd” and “Fa” manufactured by Shikoku Kasei Kogyo Co., Ltd.
シアネートエステル系硬化剤、フェノール系硬化剤、ナフトール系硬化剤、ベンゾオキサジン系硬化剤等の硬化剤は、1種又は2種以上を組み合わせて用いてもよい。当該硬化剤の含有量は、樹脂組成物中の不揮発成分を100質量%とした場合、0.01〜3質量%とし得る。 Curing agents such as a cyanate ester curing agent, a phenol curing agent, a naphthol curing agent, and a benzoxazine curing agent may be used alone or in combination of two or more. Content of the said hardening | curing agent can be 0.01-3 mass%, when the non-volatile component in a resin composition is 100 mass%.
−硬化促進剤−
硬化促進剤としては、例えば、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤、グアニジン系硬化促進剤、金属系硬化促進剤等が挙げられ、アミン系硬化促進剤、イミダゾール系硬化促進剤、金属系硬化促進剤が好ましい。
-Curing accelerator-
Examples of the curing accelerator include phosphorus-based curing accelerators, amine-based curing accelerators, imidazole-based curing accelerators, guanidine-based curing accelerators, metal-based curing accelerators, and the like. A hardening accelerator and a metal type hardening accelerator are preferable.
リン系硬化促進剤としては、例えば、トリフェニルホスフィン、ホスホニウムボレート化合物、テトラフェニルホスホニウムテトラフェニルボレート、n−ブチルホスホニウムテトラフェニルボレート、テトラブチルホスホニウムデカン酸塩、(4−メチルフェニル)トリフェニルホスホニウムチオシアネート、テトラフェニルホスホニウムチオシアネート、ブチルトリフェニルホスホニウムチオシアネート等が挙げられ、トリフェニルホスフィン、テトラブチルホスホニウムデカン酸塩が好ましい。 Examples of phosphorus curing accelerators include triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl) triphenylphosphonium thiocyanate. , Tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate and the like, and triphenylphosphine and tetrabutylphosphonium decanoate are preferable.
アミン系硬化促進剤としては、例えば、トリエチルアミン、トリブチルアミンなどのトリアルキルアミン、4−ジメチルアミノピリジン(DMAP)、ベンジルジメチルアミン、2,4,6−トリス(ジメチルアミノメチル)フェノール、1,8−ジアザビシクロ[5.4.0]−ウンデセン等が挙げられ、4−ジメチルアミノピリジン、1,8−ジアザビシクロ[5.4.0]−ウンデセンが好ましい。 Examples of the amine curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine (DMAP), benzyldimethylamine, 2,4,6-tris (dimethylaminomethyl) phenol, 1,8 -Diazabicyclo [5.4.0] -undecene and the like can be mentioned, and 4-dimethylaminopyridine and 1,8-diazabicyclo [5.4.0] -undecene are preferable.
イミダゾール系硬化促進剤としては、例えば、2−メチルイミダゾール、2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、1,2−ジメチルイミダゾール、2−エチル−4−メチルイミダゾール、1,2−ジメチルイミダゾール、2−エチル−4−メチルイミダゾール、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、1−シアノエチル−2−メチルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、1−シアノエチル−2−エチル−4−メチルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾリウムトリメリテイト、1−シアノエチル−2−フェニルイミダゾリウムトリメリテイト、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−ウンデシルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−エチル−4’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加物、2−フェニルイミダゾールイソシアヌル酸付加物、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、2,3−ジヒドロ−1H−ピロロ[1,2−a]ベンズイミダゾール、1−ドデシル−2−メチル−3−ベンジルイミダゾリウムクロライド、2−メチルイミダゾリン、2−フェニルイミダゾリン等のイミダゾール化合物及びイミダゾール化合物とエポキシ樹脂とのアダクト体が挙げられ、2−エチル−4−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾールが好ましい。 Examples of the imidazole curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl- 2 Phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino- 6- [2′-Methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl- 4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo [1,2-a] benzimidazole, 1-dodecyl-2-me Examples thereof include imidazole compounds such as ru-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, and adducts of imidazole compounds and epoxy resins, such as 2-ethyl-4-methylimidazole and 1-benzyl-2. -Phenylimidazole is preferred.
グアニジン系硬化促進剤としては、例えば、ジシアンジアミド、1−メチルグアニジン、1−エチルグアニジン、1−シクロヘキシルグアニジン、1−フェニルグアニジン、1−(o−トリル)グアニジン、ジメチルグアニジン、ジフェニルグアニジン、トリメチルグアニジン、テトラメチルグアニジン、ペンタメチルグアニジン、1,5,7−トリアザビシクロ[4.4.0]デカ−5−エン、7−メチル−1,5,7−トリアザビシクロ[4.4.0]デカ−5−エン、1−メチルビグアニド、1−エチルビグアニド、1−n−ブチルビグアニド、1−n−オクタデシルビグアニド、1,1−ジメチルビグアニド、1,1−ジエチルビグアニド、1−シクロヘキシルビグアニド、1−アリルビグアニド、1−フェニルビグアニド、1−(o−トリル)ビグアニド等が挙げられ、ジシアンジアミド、1,5,7−トリアザビシクロ[4.4.0]デカ−5−エンが好ましい。 Examples of the guanidine curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, Tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo [4.4.0] dec-5-ene, 7-methyl-1,5,7-triazabicyclo [4.4.0] Deca-5-ene, 1-methyl biguanide, 1-ethyl biguanide, 1-n-butyl biguanide, 1-n-octadecyl biguanide, 1,1-dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1 -Allyl biguanide, 1-phenyl biguanide, 1- ( - tolyl) biguanide, and the like, dicyandiamide, 1,5,7-triazabicyclo [4.4.0] dec-5-ene are preferred.
金属系硬化促進剤としては、特に限定されるものではないが、例えば、コバルト、銅、亜鉛、鉄、ニッケル、マンガン、スズ等の金属の、有機金属錯体又は有機金属塩が挙げられる。有機金属錯体の具体例としては、コバルト(II)アセチルアセトナート、コバルト(III)アセチルアセトナート等の有機コバルト錯体、銅(II)アセチルアセトナート等の有機銅錯体、亜鉛(II)アセチルアセトナート等の有機亜鉛錯体、鉄(III)アセチルアセトナート等の有機鉄錯体、ニッケル(II)アセチルアセトナート等の有機ニッケル錯体、マンガン(II)アセチルアセトナート等の有機マンガン錯体などが挙げられる。有機金属塩としては、例えば、オクチル酸亜鉛、オクチル酸錫、ナフテン酸亜鉛、ナフテン酸コバルト、ステアリン酸スズ、ステアリン酸亜鉛などが挙げられる。これらは1種又は2種以上組み合わせて使用してもよい。金属系硬化促進剤としては、有機コバルト錯体を用いることが好ましく、特に、コバルト(III)アセチルアセトナートを用いるのが好ましい。 Although it does not specifically limit as a metal type hardening accelerator, For example, the organometallic complex or organometallic salt of metals, such as cobalt, copper, zinc, iron, nickel, manganese, tin, is mentioned. Specific examples of the organometallic complex include organic cobalt complexes such as cobalt (II) acetylacetonate and cobalt (III) acetylacetonate, organic copper complexes such as copper (II) acetylacetonate, and zinc (II) acetylacetonate. Organic zinc complexes such as iron (III) acetylacetonate, organic nickel complexes such as nickel (II) acetylacetonate, and organic manganese complexes such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate. These may be used alone or in combination of two or more. As the metal-based curing accelerator, an organic cobalt complex is preferably used, and in particular, cobalt (III) acetylacetonate is preferably used.
硬化促進剤は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。硬化促進剤の含有量は、樹脂組成物中の不揮発成分を100質量%とした場合、0.01質量%〜3質量%の範囲で使用することが好ましい。 A hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more type. As for content of a hardening accelerator, when the non-volatile component in a resin composition is 100 mass%, it is preferable to use in 0.01 mass%-3 mass%.
−難燃剤−
難燃剤としては、例えば、有機リン系難燃剤、有機系窒素含有リン化合物、窒素化合物、シリコーン系難燃剤、金属水酸化物等が挙げられる。難燃剤は1種単独で用いてもよく、又は2種以上を併用してもよい。難燃剤の含有量は、特に限定はされないが、樹脂組成物中の不揮発成分を100質量%とした場合、0.5質量%〜10質量%が好ましく、1質量%〜9質量%がより好ましく、1.5質量%〜8質量%が更に好ましい。
-Flame retardant-
Examples of the flame retardant include an organic phosphorus flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a silicone flame retardant, and a metal hydroxide. A flame retardant may be used individually by 1 type, or may use 2 or more types together. The content of the flame retardant is not particularly limited, but when the nonvolatile component in the resin composition is 100% by mass, 0.5% by mass to 10% by mass is preferable, and 1% by mass to 9% by mass is more preferable. 1.5 mass% to 8 mass% is more preferable.
−ゴム粒子−
ゴム粒子としては、例えば、後述する有機溶剤に溶解せず、上述のエポキシ樹脂、硬化剤、及び熱可塑性樹脂などとも相溶しないものが使用される。このようなゴム粒子は、一般には、ゴム成分の分子量を有機溶剤や樹脂に溶解しないレベルまで大きくし、粒子状とすることで調製される。
-Rubber particles-
As the rubber particles, for example, those that do not dissolve in an organic solvent described later and are incompatible with the above-described epoxy resin, curing agent, thermoplastic resin, and the like are used. Such rubber particles are generally prepared by increasing the molecular weight of the rubber component to a level at which it does not dissolve in an organic solvent or resin and making it into particles.
ゴム粒子としては、例えば、コアシェル型ゴム粒子、架橋アクリロニトリルブタジエンゴム粒子、架橋スチレンブタジエンゴム粒子、アクリルゴム粒子などが挙げられる。コアシェル型ゴム粒子は、コア層とシェル層とを有するゴム粒子であり、例えば、外層のシェル層がガラス状ポリマーで構成され、内層のコア層がゴム状ポリマーで構成される2層構造、又は外層のシェル層がガラス状ポリマーで構成され、中間層がゴム状ポリマーで構成され、コア層がガラス状ポリマーで構成される3層構造のものなどが挙げられる。ガラス状ポリマー層は、例えば、メチルメタクリレート重合物などで構成され、ゴム状ポリマー層は、例えば、ブチルアクリレート重合物(ブチルゴム)などで構成される。ゴム粒子は1種単独で使用してもよく、2種以上を組み合わせて使用してもよい。 Examples of the rubber particles include core-shell type rubber particles, cross-linked acrylonitrile butadiene rubber particles, cross-linked styrene butadiene rubber particles, and acrylic rubber particles. The core-shell type rubber particles are rubber particles having a core layer and a shell layer. For example, a two-layer structure in which an outer shell layer is made of a glassy polymer and an inner core layer is made of a rubbery polymer, or Examples include a three-layer structure in which the outer shell layer is made of a glassy polymer, the intermediate layer is made of a rubbery polymer, and the core layer is made of a glassy polymer. The glassy polymer layer is made of, for example, methyl methacrylate polymer, and the rubbery polymer layer is made of, for example, butyl acrylate polymer (butyl rubber). A rubber particle may be used individually by 1 type and may be used in combination of 2 or more type.
ゴム粒子の平均粒径は、好ましくは0.005μm〜1μmの範囲であり、より好ましくは0.2μm〜0.6μmの範囲である。ゴム粒子の平均粒径は、動的光散乱法を用いて測定することができる。例えば、適当な有機溶剤にゴム粒子を超音波などにより均一に分散させ、濃厚系粒径アナライザー(FPAR−1000;大塚電子(株)製)を用いて、ゴム粒子の粒度分布を質量基準で作成し、そのメディアン径を平均粒径とすることで測定することができる。樹脂組成物中のゴム粒子の含有量は、好ましくは1質量%〜10質量%であり、より好ましくは2質量%〜5質量%である。 The average particle size of the rubber particles is preferably in the range of 0.005 μm to 1 μm, more preferably in the range of 0.2 μm to 0.6 μm. The average particle diameter of the rubber particles can be measured using a dynamic light scattering method. For example, rubber particles are uniformly dispersed in an appropriate organic solvent by ultrasonic waves, etc., and a particle size distribution of rubber particles is created on a mass basis using a concentrated particle size analyzer (FPAR-1000; manufactured by Otsuka Electronics Co., Ltd.). And it can measure by making the median diameter into an average particle diameter. The content of the rubber particles in the resin composition is preferably 1% by mass to 10% by mass, and more preferably 2% by mass to 5% by mass.
本発明の樹脂組成物は、必要に応じて、更に他の添加剤を含んでいてもよく、かかる他の添加剤としては、例えば、有機フィラー、増粘剤、消泡剤、レベリング剤、密着性付与剤、及び着色剤等の樹脂添加剤等が挙げられる。 The resin composition of the present invention may further contain other additives as necessary. Examples of such other additives include organic fillers, thickeners, antifoaming agents, leveling agents, and adhesion. Examples thereof include resin additives such as a property-imparting agent and a colorant.
本発明の樹脂組成物は、上記成分を適宜混合し、また、必要に応じて三本ロール、ボールミル、ビーズミル、サンドミル等の混練手段、あるいはスーパーミキサー、プラネタリーミキサー等の撹拌手段により混練または撹拌することにより、樹脂ワニスとして製造することができる。 The resin composition of the present invention is appropriately mixed with the above components and, if necessary, kneaded or stirred by a kneading means such as a triple roll, ball mill, bead mill or sand mill, or a stirring means such as a super mixer or a planetary mixer. By doing so, it can be produced as a resin varnish.
本発明の樹脂組成物の用途は、特に限定されないが、接着フィルム等のシート状積層材料、回路基板(積層板用途、多層プリント配線板用途等)、ソルダーレジスト、アンダーフィル材、ダイボンディング材、半導体封止材、穴埋め樹脂、部品埋め込み樹脂等、樹脂組成物が必要とされる用途の広範囲に使用できる。なかでも、本発明の樹脂組成物は、多層プリント配線板の絶縁層用樹脂組成物として好適に使用することができ、メッキにより導体層を形成するための樹脂組成物(メッキにより導体層を形成する多層プリント配線板の絶縁層用樹脂組成物)や多層プリント配線板のビルドアップ層形成用樹脂組成物としてより好適に使用することができる。本発明の樹脂組成物は、ワニス状態で回路基板に塗布して絶縁層を形成することもできるし、接着フィルム等のシート状積層材料の形態で用いることもできる。 The use of the resin composition of the present invention is not particularly limited, but a sheet-like laminated material such as an adhesive film, a circuit board (for laminated board use, multilayer printed wiring board use, etc.), solder resist, underfill material, die bonding material, It can be used in a wide range of applications where a resin composition is required, such as a semiconductor sealing material, hole filling resin, and component filling resin. Among them, the resin composition of the present invention can be suitably used as a resin composition for an insulating layer of a multilayer printed wiring board, and is a resin composition for forming a conductor layer by plating (a conductor layer is formed by plating). The resin composition for an insulating layer of a multilayer printed wiring board) or a resin composition for forming a buildup layer of a multilayer printed wiring board can be used more suitably. The resin composition of the present invention can be applied to a circuit board in a varnish state to form an insulating layer, or can be used in the form of a sheet-like laminated material such as an adhesive film.
<接着フィルム>
接着フィルムは、樹脂組成物から構成される層が支持体上に形成されてなるものである。該接着フィルムは、当業者に公知の方法、例えば、有機溶剤に樹脂組成物を溶解した樹脂ワニスを調製し、この樹脂ワニスを、ダイコーターなどを用いて、支持体に塗布し、更に加熱、あるいは熱風吹きつけ等により有機溶剤を乾燥させて樹脂組成物から構成される層を形成させることにより製造することができる。樹脂組成物から構成される層は、樹脂組成物層とも称する。
<Adhesive film>
The adhesive film is formed by forming a layer composed of a resin composition on a support. The adhesive film is a method known to those skilled in the art, for example, preparing a resin varnish in which a resin composition is dissolved in an organic solvent, and applying the resin varnish to a support using a die coater or the like, further heating, Or it can manufacture by drying the organic solvent by hot air spraying etc. and forming the layer comprised from a resin composition. The layer comprised from a resin composition is also called a resin composition layer.
有機溶剤としては、例えば、アセトン、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル、酢酸ブチル、セロソルブアセテート、プロピレングリコールモノメチルエーテルアセテート、カルビトールアセテート等の酢酸エステル類、セロソルブ、ブチルカルビトール等のカルビトール類、トルエン、キシレン等の芳香族炭化水素類、ジメチルホルムアミド、ジメチルアセトアミド、N−メチルピロリドン等のアミド系溶媒等を挙げることができる。有機溶剤は2種以上を組みわせて用いてもよい。 Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone and cyclohexanone, acetates such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate and carbitol acetate, and carbitols such as cellosolve and butyl carbitol. And aromatic hydrocarbons such as toluene and xylene, amide solvents such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidone. Two or more organic solvents may be used in combination.
乾燥条件は特に限定されないが、樹脂組成物層における有機溶剤の含有量が10質量%以下、好ましくは5質量%以下となるように乾燥させる。ワニス中の有機溶剤量、有機溶剤の沸点によっても異なるが、例えば30〜60質量%の有機溶剤を含むワニスを50〜150℃で3〜10分間程度乾燥させることにより、樹脂組成物層を形成することができる。この樹脂組成物層は、Bステージフィルムと呼ばれることもあり、完全に硬化しておらず、硬化が更に進行され得るものである。 The drying conditions are not particularly limited, but drying is performed so that the content of the organic solvent in the resin composition layer is 10% by mass or less, preferably 5% by mass or less. Depending on the amount of organic solvent in the varnish and the boiling point of the organic solvent, for example, a resin composition layer is formed by drying a varnish containing 30 to 60% by mass of an organic solvent at 50 to 150 ° C. for about 3 to 10 minutes. can do. This resin composition layer is sometimes referred to as a B-stage film, and is not completely cured, so that the curing can further proceed.
この樹脂組成物層の100℃における溶融粘度は、ラミネート性や埋め込み性が良好な接着フィルムを得る観点から、35000poise以下であることが好ましく、20000poise以下であることがより好ましく、10000poise以下であることが更に好ましく、5000poise以下であることが更により好ましく、3000poise以下であることが特に好ましい。また、ラミネート時の浸みだし防止の観点から、500poise以上が好ましく、1000poise以上がより好ましい。樹脂組成物層をラミネートする際は、通常100℃付近で行うことになるため、100℃における溶融粘度値により、接着フィルムのラミネート性を評価することが可能である。 The melt viscosity at 100 ° C. of the resin composition layer is preferably 35000 poise or less, more preferably 20000 poise or less, and more preferably 10,000 poise or less from the viewpoint of obtaining an adhesive film with good laminating properties and embedding properties. Is more preferably 5000 poise or less, and even more preferably 3000 poise or less. In addition, from the viewpoint of preventing bleeding during lamination, 500 poise or more is preferable, and 1000 poise or more is more preferable. Since laminating the resin composition layer is usually performed at around 100 ° C., the laminating property of the adhesive film can be evaluated by the melt viscosity value at 100 ° C.
本発明の樹脂組成物層の100℃における溶融粘度は、動的粘弾性法により測定することができる。具体的には、樹脂量1g、直径18mmのパラレルプレートを使用し、開始温度60℃から200℃まで、昇温速度5℃/分、測定温度間隔2.5℃、振動1Hz/degの測定条件にて動的粘弾性測定を行うことにより、樹脂組成物層の100℃における溶融粘度を測定することができる。そのような動的粘弾性測定装置としては、例えば、(株)ユー・ビー・エム製型式Rheosol−G3000が挙げられる。 The melt viscosity at 100 ° C. of the resin composition layer of the present invention can be measured by a dynamic viscoelastic method. Specifically, a parallel plate having a resin amount of 1 g and a diameter of 18 mm is used, and the measurement conditions are a start temperature of 60 ° C. to 200 ° C., a temperature increase rate of 5 ° C./min, a measurement temperature interval of 2.5 ° C., and vibration of 1 Hz / deg. By measuring the dynamic viscoelasticity at, the melt viscosity at 100 ° C. of the resin composition layer can be measured. Examples of such a dynamic viscoelasticity measuring apparatus include model Rhesol-G3000 manufactured by UBM Co., Ltd.
接着フィルムにおいて形成される樹脂組成物層の厚さは、導体層の厚さ以上とするのが好ましい。回路基板が有する導体層の厚さは通常5〜70μmの範囲であるので、樹脂組成物層の厚さは、5〜40μmがより好ましい。特に本発明においては、薄層化された際にも、低い表面粗度と高いメッキピール強度を達成でき、かつ高温時の低CTE化を達成することができるため、5〜30μmが更に好ましい。 The thickness of the resin composition layer formed in the adhesive film is preferably equal to or greater than the thickness of the conductor layer. Since the thickness of the conductor layer of the circuit board is usually in the range of 5 to 70 μm, the thickness of the resin composition layer is more preferably 5 to 40 μm. In particular, in the present invention, even when thinned, a low surface roughness and a high plating peel strength can be achieved, and a low CTE at a high temperature can be achieved.
支持体としては、ポリエチレン、ポリプロピレン、ポリ塩化ビニル等のポリオレフィンのフィルム、ポリエチレンテレフタレート(以下「PET」と略称することがある。)、ポリエチレンナフタレート等のポリエステルのフィルム、ポリカーボネートフィルム、ポリイミドフィルムなどの各種プラスチックフィルムが挙げられる。また離型紙や銅箔、アルミニウム箔等の金属箔などを使用してもよい。なかでも、汎用性の点から、プラスチックフィルムが好ましく、ポリエチレンテレフタレートフィルムがより好ましい。支持体及び後述する保護フィルムには、マッド処理、コロナ処理等の表面処理が施してあってもよい。また、シリコーン樹脂系離型剤、アルキッド樹脂系離型剤、フッ素樹脂系離型剤等の離型剤で離型処理が施してあってもよい。 Examples of the support include polyolefin films such as polyethylene, polypropylene, and polyvinyl chloride, polyethylene terephthalate (hereinafter sometimes abbreviated as “PET”), polyester films such as polyethylene naphthalate, polycarbonate films, and polyimide films. Various plastic films are listed. Moreover, you may use release foil, metal foil, such as copper foil and aluminum foil. Among these, from the viewpoint of versatility, a plastic film is preferable, and a polyethylene terephthalate film is more preferable. The support and a protective film described later may be subjected to surface treatment such as mud treatment or corona treatment. The release treatment may be performed with a release agent such as a silicone resin release agent, an alkyd resin release agent, or a fluororesin release agent.
支持体の厚さは特に限定されないが、取扱性が向上するという点で10μm以上が好ましく、20μm以上がより好ましく、30μm以上が更に好ましい。また、コストパフォーマンス向上や支持体上から穴あけを行う場合に効率的な穴あけを行うことができるという観点から、150μm以下が好ましく、100μm以下がより好ましく、50μm以下が更に好ましい。 The thickness of the support is not particularly limited, but is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more in terms of improved handling properties. Further, from the viewpoint of improving cost performance and enabling efficient drilling when drilling from the support, it is preferably 150 μm or less, more preferably 100 μm or less, and even more preferably 50 μm or less.
樹脂組成物層の支持体が密着している面の反対側の面には、支持体に準じた保護フィルムを更に積層することができる。この場合、接着フィルムは、支持体と、該支持体の上に形成された樹脂組成物層と、該樹脂組成物層の上に形成された保護フィルムとを含む。保護フィルムの厚さは、特に限定されるものではないが、例えば、1〜40μmである。保護フィルムを積層することにより、樹脂組成物層の表面へのゴミ等の付着やキズを防止することができる。接着フィルムは、ロール状に巻きとって貯蔵することもできる。 A protective film according to the support can be further laminated on the surface of the resin composition layer opposite to the surface to which the support is in close contact. In this case, the adhesive film includes a support, a resin composition layer formed on the support, and a protective film formed on the resin composition layer. Although the thickness of a protective film is not specifically limited, For example, it is 1-40 micrometers. By laminating the protective film, it is possible to prevent dust and the like from being attached to the surface of the resin composition layer and scratches. The adhesive film can also be stored in a roll.
<硬化物>
本発明の硬化物は、本発明の樹脂組成物を熱硬化させて得られる。
<Hardened product>
The cured product of the present invention is obtained by thermally curing the resin composition of the present invention.
樹脂組成物の熱硬化条件は特に限定されず、例えば、多層プリント配線板の絶縁層を形成するに際して通常採用される条件を使用してよい。 The thermosetting conditions for the resin composition are not particularly limited, and for example, the conditions normally employed when forming the insulating layer of the multilayer printed wiring board may be used.
例えば、樹脂組成物の熱硬化条件は、樹脂組成物の組成等によっても異なるが、硬化温度は120℃〜240℃の範囲(好ましくは150℃〜220℃の範囲、より好ましくは190℃〜200℃の範囲)、硬化時間は10分間〜180分間の範囲(好ましくは30分間〜120分間、より好ましくは90分間〜120分間)とすることができる。 For example, the thermosetting conditions of the resin composition vary depending on the composition of the resin composition and the like, but the curing temperature is in the range of 120 ° C to 240 ° C (preferably in the range of 150 ° C to 220 ° C, more preferably in the range of 190 ° C to 200 ° C. C.) and the curing time can be in the range of 10 minutes to 180 minutes (preferably 30 minutes to 120 minutes, more preferably 90 minutes to 120 minutes).
樹脂組成物を熱硬化させる前に、樹脂組成物を硬化温度よりも低い温度にて予備加熱してもよい。例えば、樹脂組成物を熱硬化させるのに先立ち、50℃以上120℃未満(好ましくは60℃以上110℃以下、より好ましくは70℃以上100℃以下)の温度にて、樹脂組成物を5分間以上(好ましくは5分間〜150分間、より好ましくは15分間〜120分間)予備加熱してもよい。 Before the resin composition is thermally cured, the resin composition may be preheated at a temperature lower than the curing temperature. For example, prior to thermosetting the resin composition, the resin composition is kept at a temperature of 50 ° C. or higher and lower than 120 ° C. (preferably 60 ° C. or higher and 110 ° C. or lower, more preferably 70 ° C. or higher and 100 ° C. or lower) for 5 minutes. Preheating may be performed as described above (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes).
本発明の硬化物の厚さは、用途によっても異なるが、多層プリント配線板の絶縁層として使用する場合、好ましくは100μm以下、より好ましくは80μm以下、更に好ましくは60μm以下、更により好ましくは40μm以下である。硬化物の厚さの下限は、用途によっても異なるが、多層プリント配線板の絶縁層として使用する場合、通常、10μm以上である。 The thickness of the cured product of the present invention varies depending on the application, but when used as an insulating layer of a multilayer printed wiring board, it is preferably 100 μm or less, more preferably 80 μm or less, still more preferably 60 μm or less, and even more preferably 40 μm. It is as follows. Although the minimum of the thickness of hardened | cured material changes with uses, when using as an insulating layer of a multilayer printed wiring board, it is 10 micrometers or more normally.
<接着フィルムを用いた多層プリント配線板>
次に、上記のようにして製造した接着フィルムを用いて多層プリント配線板を製造する方法の一例を説明する。
<Multilayer printed wiring board using adhesive film>
Next, an example of a method for producing a multilayer printed wiring board using the adhesive film produced as described above will be described.
まず、接着フィルムを、真空ラミネーターを用いて回路基板の片面又は両面にラミネート(積層)する。回路基板に用いられる基板としては、例えば、ガラスエポキシ基板、金属基板、ポリエステル基板、ポリイミド基板、BTレジン基板、熱硬化型ポリフェニレンエーテル基板等が挙げられる。なお、ここで回路基板とは、上記のような基板の片面又は両面にパターン加工された導体層(回路)が形成されたものをいう。また導体層と絶縁層とを交互に積層してなる多層プリント配線板において、該多層プリント配線板の最外層の片面又は両面がパターン加工された導体層(回路)となっているものも、ここでいう回路基板に含まれる。なお導体層表面には、黒化処理、銅エッチング等により予め粗化処理が施されていてもよい。 First, the adhesive film is laminated (laminated) on one side or both sides of a circuit board using a vacuum laminator. Examples of the substrate used for the circuit substrate include a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT resin substrate, a thermosetting polyphenylene ether substrate, and the like. In addition, a circuit board means here that the conductor layer (circuit) patterned was formed in the one or both surfaces of the above boards. Also, in a multilayer printed wiring board in which conductor layers and insulating layers are alternately laminated, one of the outermost layers of the multilayer printed wiring board is a conductor layer (circuit) in which one or both sides are patterned. It is included in the circuit board. The surface of the conductor layer may be previously roughened by blackening, copper etching, or the like.
接着フィルムが保護フィルムを有している場合には、該保護フィルムを除去した後、必要に応じて接着フィルム及び回路基板をプレヒートし、接着フィルムを加圧及び加熱しながら回路基板にラミネートする。好適な一実施形態では、真空ラミネート法により減圧下で、接着フィルムを、回路基板にラミネートする。ラミネートの条件は、特に限定されるものではないが、例えば、圧着温度(ラミネート温度)を好ましくは70〜140℃、圧着圧力(ラミネート圧力)を好ましくは1〜11kgf/cm2(9.8×104〜107.9×104N/m2)とし、圧着時間(ラミネート時間)を好ましくは5〜180秒間とし、空気圧20mmHg(26.7hPa)以下の減圧下でラミネートするのが好ましい。また、ラミネートの方法は、バッチ式であってもロールでの連続式であってもよい。真空ラミネートは、市販の真空ラミネーターを使用して行うことができる。市販の真空ラミネーターとしては、例えば、ニチゴー・モートン(株)製バキュームアップリケーター、(株)名機製作所製真空加圧式ラミネーター、(株)日立インダストリイズ製ロール式ドライコータ、日立エーアイーシー(株)製真空ラミネーター等を挙げることができる。 When the adhesive film has a protective film, after removing the protective film, the adhesive film and the circuit board are preheated as necessary, and the adhesive film is laminated to the circuit board while being pressurized and heated. In one preferred embodiment, the adhesive film is laminated to the circuit board under reduced pressure by a vacuum laminating method. Lamination conditions are not particularly limited. For example, the pressure bonding temperature (laminating temperature) is preferably 70 to 140 ° C., and the pressure bonding pressure (laminating pressure) is preferably 1 to 11 kgf / cm 2 (9.8 × 10 4 to 107.9 × 10 4 N / m 2 ), the pressure bonding time (laminating time) is preferably 5 to 180 seconds, and the lamination is preferably performed under reduced pressure with an air pressure of 20 mmHg (26.7 hPa) or less. The laminating method may be a batch method or a continuous method using a roll. The vacuum lamination can be performed using a commercially available vacuum laminator. Commercially available vacuum laminators include, for example, a vacuum applicator manufactured by Nichigo-Morton Co., Ltd., a vacuum pressurizing laminator manufactured by Meiki Seisakusho Co., Ltd., a roll dry coater manufactured by Hitachi Industries, Ltd., and Hitachi AIC Co., Ltd. ) Made vacuum laminator and the like.
接着フィルムを回路基板にラミネートした後、室温付近に冷却してから、支持体を剥離する場合は剥離し、樹脂組成物を熱硬化して硬化物を形成する。これにより、回路基板上に絶縁層を形成することができる。熱硬化の条件は、先述のとおりである。絶縁層を形成した後、硬化前に支持体を剥離しなかった場合は、必要によりここで剥離することもできる。 After laminating the adhesive film on the circuit board, the substrate is cooled to around room temperature and then peeled off when the support is peeled off, and the resin composition is thermally cured to form a cured product. Thereby, an insulating layer can be formed on the circuit board. The conditions for thermosetting are as described above. After the insulating layer is formed, if the support is not peeled before curing, it can be peeled off here if necessary.
次いで、回路基板上に形成された絶縁層に穴あけ加工を行ってビアホール、スルーホールを形成する。穴あけ加工は、例えば、ドリル、レーザー、プラズマ等の公知の方法により、また必要によりこれらの方法を組み合わせて行うことができる。なかでも、炭酸ガスレーザー、YAGレーザー等のレーザーによる穴あけ加工が最も一般的な方法である。また、接着フィルムを回路基板に積層し、樹脂組成物層を熱硬化して絶縁層を形成し、回路基板上に形成された絶縁層に支持体上から穴あけ加工してビアホールを形成することで多層プリント配線板を製造することが好ましく、穴あけ加工後に支持体を剥離することが好ましい。このように、支持体上から穴あけ加工してビアホールを形成することにより、スミアの発生を抑制することができる。また、多層プリント配線板の薄型化に対応するため、ビアホールのトップ径(直径)は15〜70μmが好ましく、20〜65μmがより好ましく、25〜60μmが更に好ましい。 Next, a hole is formed in the insulating layer formed on the circuit board to form a via hole and a through hole. The drilling can be performed by a known method such as drilling, laser, or plasma, or by combining these methods as necessary. Of these, drilling with a laser such as a carbon dioxide laser or a YAG laser is the most common method. Also, by laminating an adhesive film on a circuit board, thermosetting the resin composition layer to form an insulating layer, and forming a via hole by drilling the insulating layer formed on the circuit board from above the support. It is preferable to produce a multilayer printed wiring board, and it is preferable to peel the support after drilling. Thus, by forming a via hole by drilling from the support, it is possible to suppress the occurrence of smear. Further, in order to cope with the thinning of the multilayer printed wiring board, the top diameter (diameter) of the via hole is preferably 15 to 70 μm, more preferably 20 to 65 μm, and still more preferably 25 to 60 μm.
次いで、絶縁層表面の粗化処理を行う。乾式の粗化処理としてはプラズマ処理等が挙げられ、湿式の粗化処理としては膨潤液による膨潤処理、酸化剤による粗化処理及び中和液による中和処理をこの順に行う方法が挙げられる。乾式、湿式のいずれの粗化処理を採用してもよいが、湿式の粗化処理の方が、絶縁層表面に凸凹のアンカーを形成しながら、ビアホール内のスミアを除去することができる点で好ましい。膨潤液による膨潤処理は、絶縁層を50〜80℃で5〜20分間(好ましくは55〜70℃で8〜15分間)、膨潤液に浸漬させることで行われる。膨潤液としてはアルカリ溶液、界面活性剤溶液等が挙げられ、好ましくはアルカリ溶液である。該アルカリ溶液としては、例えば、水酸化ナトリウム溶液、水酸化カリウム溶液等が挙げられる。市販されている膨潤液としては、例えば、アトテックジャパン(株)製のスウェリング・ディップ・セキュリガントP(Swelling Dip Securiganth P)、スウェリング・ディップ・セキュリガントSBU(Swelling Dip Securiganth SBU)等を挙げることができる。酸化剤による粗化処理は、絶縁層を60〜80℃で10〜30分間(好ましくは70〜80℃で15〜25分間)、酸化剤溶液に浸漬させることで行われる。酸化剤としては、例えば、水酸化ナトリウムの水溶液に過マンガン酸カリウムや過マンガン酸ナトリウムを溶解したアルカリ性過マンガン酸溶液、重クロム酸塩、オゾン、過酸化水素/硫酸、硝酸等を挙げることができる。また、アルカリ性過マンガン酸溶液における過マンガン酸塩の濃度は5〜10重量%とするのが好ましい。市販されている酸化剤としては、例えば、アトテックジャパン(株)製のコンセントレート・コンパクトCP、ドージングソリューション・セキュリガントP等のアルカリ性過マンガン酸溶液が挙げられる。中和液による中和処理は、絶縁層を30〜50℃で3〜10分間(好ましくは35〜45℃で3〜8分間)、中和液に浸漬させることで行われる。中和液としては、酸性の水溶液が好ましく、市販品としては、アトテックジャパン(株)製のリダクションソリューション・セキュリガントPが挙げられる。 Next, the surface of the insulating layer is roughened. Examples of the dry roughening treatment include plasma treatment, and examples of the wet roughening treatment include a method in which a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing solution are performed in this order. Either dry or wet roughening treatment may be adopted, but wet roughening treatment can remove smear in the via hole while forming uneven anchors on the insulating layer surface. preferable. The swelling treatment with the swelling liquid is performed by immersing the insulating layer in the swelling liquid at 50 to 80 ° C. for 5 to 20 minutes (preferably at 55 to 70 ° C. for 8 to 15 minutes). Examples of the swelling liquid include an alkaline solution and a surfactant solution, and an alkaline solution is preferable. Examples of the alkaline solution include sodium hydroxide solution and potassium hydroxide solution. Examples of commercially available swelling liquids include Swelling Dip Securigant P (Swelling Dip Securiganth P), Swelling Dip Securigant SBU (Swelling Dip Securiganth SBU) manufactured by Atotech Japan Co., Ltd. be able to. The roughening treatment with an oxidizing agent is performed by immersing the insulating layer in an oxidizing agent solution at 60 to 80 ° C. for 10 to 30 minutes (preferably at 70 to 80 ° C. for 15 to 25 minutes). Examples of the oxidizing agent include alkaline permanganate solution in which potassium permanganate and sodium permanganate are dissolved in an aqueous solution of sodium hydroxide, dichromate, ozone, hydrogen peroxide / sulfuric acid, nitric acid and the like. it can. The concentration of permanganate in the alkaline permanganate solution is preferably 5 to 10% by weight. Examples of commercially available oxidizing agents include alkaline permanganate solutions such as concentrate compact CP and dosing solution securigant P manufactured by Atotech Japan. The neutralization treatment with the neutralizing solution is performed by immersing the insulating layer in the neutralizing solution at 30 to 50 ° C. for 3 to 10 minutes (preferably at 35 to 45 ° C. for 3 to 8 minutes). The neutralizing solution is preferably an acidic aqueous solution, and a commercially available product is Reduction Solution Securigant P manufactured by Atotech Japan Co., Ltd.
粗化処理後の絶縁層表面のRa(算術平均粗さ)は、微細配線形成を可能とする点から、200nm以下であることが好ましく、150nm以下であることがより好ましく、120nm以下であることが更により好ましく、100nm以下であることが特に好ましい。下限値に制限はないが、一般的に20nm以上となる。絶縁層表面の算術平均粗さ(Ra値)は、非接触型表面粗さ計を用いて測定することができる。非接触型表面粗さ計の具体例としては、ビーコインスツルメンツ社製の「WYKO NT3300」が挙げられる。 The Ra (arithmetic mean roughness) of the surface of the insulating layer after the roughening treatment is preferably 200 nm or less, more preferably 150 nm or less, and 120 nm or less from the viewpoint of enabling fine wiring formation. Is still more preferable, and it is especially preferable that it is 100 nm or less. The lower limit is not limited, but is generally 20 nm or more. The arithmetic average roughness (Ra value) of the insulating layer surface can be measured using a non-contact type surface roughness meter. As a specific example of the non-contact type surface roughness meter, “WYKO NT3300” manufactured by Becoins Instruments is cited.
次いで、乾式メッキ又は湿式メッキにより絶縁層上に導体層を形成する。乾式メッキとしては、蒸着、スパッタリング、イオンプレーティング等の公知の方法を使用することができる。湿式メッキとしては、無電解メッキと電解メッキとを組み合わせて導体層を形成する方法、導体層とは逆パターンのメッキレジストを形成し、無電解メッキのみで導体層を形成する方法、等が挙げられる。その後のパターン形成の方法として、例えば、当業者に公知のサブトラクティブ法、セミアディティブ法などを用いることができる。そして、上述の一連の工程を複数回繰り返すことで、ビルドアップ層を多段に積層した多層プリント配線板を製造することができる。 Next, a conductor layer is formed on the insulating layer by dry plating or wet plating. As the dry plating, a known method such as vapor deposition, sputtering, or ion plating can be used. Examples of wet plating include a method in which a conductive layer is formed by combining electroless plating and electrolytic plating, a method in which a plating resist having a pattern opposite to that of the conductive layer is formed, and a conductive layer is formed only by electroless plating. It is done. As a subsequent pattern formation method, for example, a subtractive method or a semi-additive method known to those skilled in the art can be used. And the multilayer printed wiring board which laminated | stacked the buildup layer in multiple stages can be manufactured by repeating the above-mentioned series of processes several times.
メッキ導体層の引き剥がし強さは、0.4kgf/cm以上であることが好ましく、0.5kgf/cm以上であることがより好ましく、0.6kgf/cm以上であることが更により好ましい。上限値に制限はないが、一般的に1.0kgf/cm以下となる。メッキ導体層の引き剥がし強さは、粗化処理後の硬化物表面にメッキにより導体層を形成し、該硬化物表面と該導体層とのメッキピール強度を測定する。引っ張り試験機としては、例えば、(株)TSE製の「AC−50C−SL」等が挙げられる。 The peel strength of the plated conductor layer is preferably 0.4 kgf / cm or more, more preferably 0.5 kgf / cm or more, and even more preferably 0.6 kgf / cm or more. Although there is no restriction | limiting in an upper limit, Generally it will be 1.0 kgf / cm or less. As for the peel strength of the plated conductor layer, a conductor layer is formed on the cured product surface after the roughening treatment by plating, and the plating peel strength between the cured product surface and the conductor layer is measured. Examples of the tensile tester include “AC-50C-SL” manufactured by TSE Corporation.
<半導体装置>
本発明の多層プリント配線板を用いることで半導体装置を製造することができる。本発明の多層プリント配線板の導通箇所に、半導体チップを実装することにより半導体装置を製造することができる。「導通箇所」とは、「多層プリント配線板における電気信号を伝える箇所」であって、その場所は表面であっても、埋め込まれた箇所であってもいずれでも構わない。また、半導体チップは半導体を材料とする電気回路素子であれば特に限定されない。
<Semiconductor device>
A semiconductor device can be manufactured by using the multilayer printed wiring board of the present invention. A semiconductor device can be manufactured by mounting a semiconductor chip in a conductive portion of the multilayer printed wiring board of the present invention. The “conduction location” is a “location where an electrical signal is transmitted in a multilayer printed wiring board”, and the location may be a surface or an embedded location. The semiconductor chip is not particularly limited as long as it is an electric circuit element made of a semiconductor.
本発明の半導体装置を製造する際の半導体チップの実装方法は、半導体チップが有効に機能しさえすれば、特に限定されないが、具体的には、ワイヤボンディング実装方法、フリップチップ実装方法、バンプなしビルドアップ層(BBUL)による実装方法、異方性導電フィルム(ACF)による実装方法、非導電性フィルム(NCF)による実装方法、などが挙げられる。 The semiconductor chip mounting method for manufacturing the semiconductor device of the present invention is not particularly limited as long as the semiconductor chip functions effectively, but specifically, a wire bonding mounting method, a flip chip mounting method, and no bumps. Examples include a mounting method using a build-up layer (BBUL), a mounting method using an anisotropic conductive film (ACF), and a mounting method using a non-conductive film (NCF).
<ピール強度及びRa値測定用サンプルの調製>
(1)内層回路基板の下地処理
内層回路を形成したガラス布基材エポキシ樹脂両面銅張積層板(銅箔の厚さ18μm、基板厚み0.3mm、松下電工(株)製R5715ES)の両面をメック(株)製CZ8100(有機酸を含む表面処理剤)に浸漬して、銅表面の粗化処理をおこなった。
<Preparation of peel strength and Ra value measurement sample>
(1) Underlayer treatment of inner layer circuit board Both sides of a glass cloth base epoxy resin double-sided copper-clad laminate (copper foil thickness 18 μm, substrate thickness 0.3 mm, Matsushita Electric Works R5715ES) on which an inner layer circuit is formed The copper surface was roughened by dipping in CZ8100 (a surface treatment agent containing an organic acid) manufactured by MEC Co., Ltd.
(2)接着フィルムのラミネート
実施例及び比較例で作製した接着フィルムを、バッチ式真空加圧ラミネーターMVLP−500(名機(株)製商品名)を用いて、内層回路基板の両面にラミネートした。ラミネートは、30秒間減圧して気圧を13hPa以下とし、その後30秒間、100℃、圧力0.74MPaでプレスすることにより行った。
(2) Lamination of Adhesive Film The adhesive films produced in the examples and comparative examples were laminated on both sides of the inner circuit board using a batch type vacuum pressure laminator MVLP-500 (trade name, manufactured by Meiki Co., Ltd.). . Lamination was performed by reducing the pressure for 30 seconds to a pressure of 13 hPa or less, and then pressing at 100 ° C. and a pressure of 0.74 MPa for 30 seconds.
(3)樹脂組成物の硬化
ラミネートされた接着フィルムからPETフィルムを剥離し、80℃、30分、次いで180℃、30分、の硬化条件で樹脂組成物を硬化して、絶縁層を形成した。
(3) Curing of resin composition The PET film was peeled off from the laminated adhesive film, and the resin composition was cured under curing conditions of 80 ° C, 30 minutes, then 180 ° C, 30 minutes to form an insulating layer. .
(4)粗化処理
積層板を、膨潤液である、アトテックジャパン(株)製のジエチレングリコールモノブチルエーテル含有のスウェリング・ディップ・セキュリガントPに浸漬し、次に粗化液として、アトテックジャパン(株)製のコンセントレート・コンパクトCP(KMnO4:60g/L、NaOH:40g/Lの水溶液)に浸漬、最後に中和液として、アトテックジャパン(株)製のリダクションソリューション・セキュリガントPに40℃で5分間浸漬した(粗化条件:積層板を、膨潤液に60℃で5分間浸漬し、粗化液に80℃で20分間浸漬した。)。この粗化処理後の積層板について、下記の方法で表面粗度の測定を行った。
(4) Roughening treatment The laminate is immersed in a swelling liquid, a swelling ring dip securigant P containing diethylene glycol monobutyl ether manufactured by Atotech Japan Co., Ltd., and then used as a roughening liquid. ) Manufactured by Concentrate Compact CP (KMnO 4 : 60 g / L, NaOH: 40 g / L aqueous solution), and finally at 40 ° C. as a neutralizing solution, reduced solution securigant P manufactured by Atotech Japan Co., Ltd. (Roughening conditions: the laminate was immersed in the swelling liquid at 60 ° C. for 5 minutes and immersed in the roughening liquid at 80 ° C. for 20 minutes). About the laminated board after this roughening process, the surface roughness was measured with the following method.
(5)セミアディティブ工法によるメッキ
絶縁層表面に回路を形成するために、内層回路基板を、PdCl2を含む無電解メッキ用溶液に浸漬し、次に無電解銅メッキ液に浸漬した。浸漬後の内層回路基板を150℃にて30分間加熱してアニール処理を行った後、得られた基板に、エッチングレジストを形成し、エッチングによるパターン形成をした。その後、得られた基板に、硫酸銅電解メッキを行い、30μmの厚さで導体層を形成した。次に、得られた基板に、アニール処理を180℃にて60分間行った。この回路基板について、メッキ銅のピール強度の測定を行った。
(5) Plating by semi-additive method In order to form a circuit on the surface of the insulating layer, the inner layer circuit board was immersed in an electroless plating solution containing PdCl 2 and then immersed in an electroless copper plating solution. After the immersion, the inner layer circuit board was heated at 150 ° C. for 30 minutes for annealing treatment, and then an etching resist was formed on the obtained substrate to form a pattern by etching. Thereafter, copper sulfate electrolytic plating was performed on the obtained substrate to form a conductor layer with a thickness of 30 μm. Next, the obtained substrate was annealed at 180 ° C. for 60 minutes. The peel strength of the plated copper was measured for this circuit board.
<メッキ導体層の引き剥がし強さ(ピール強度)>
回路基板の導体層に、幅10mm、長さ100mmの部分の切込みを入れ、この一端を剥がしてつかみ具で掴み、室温中にて、50mm/分の速度で垂直方向に35mmを引き剥がした時の荷重を測定した。引っ張り試験機としては、(株)TSE製の「AC−50C−SL」を用いた。
<Stripping strength of peeled conductor layer (peel strength)>
When a notch with a width of 10 mm and a length of 100 mm is cut into the conductor layer of the circuit board, this one end is peeled off and gripped with a gripper, and 35 mm is peeled off vertically at a speed of 50 mm / min at room temperature The load of was measured. As a tensile tester, “AC-50C-SL” manufactured by TSE Co., Ltd. was used.
<粗化後の表面粗さ(Ra値)>
非接触型表面粗さ計(ビーコインスツルメンツ社製WYKO NT3300)を用いて、VSIコンタクトモード、50倍レンズにより測定範囲を121μm×92μmとして得られた数値によりRa値を求めた。Ra値は、無作為に選んだ10点の平均値を求めた。
<Surface roughness after roughening (Ra value)>
Using a non-contact type surface roughness meter (BYCO Instruments WYKO NT3300), the Ra value was obtained from the numerical value obtained by measuring the measurement range to 121 μm × 92 μm with a VSI contact mode and a 50 × lens. For the Ra value, an average value of 10 points randomly selected was obtained.
<線熱膨張率(CTE)の評価>
実施例及び比較例で得られた接着フィルムを200℃で90分間加熱して樹脂組成物層を熱硬化させた。その硬化物を、幅約5mm、長さ約15mmの試験片に切断し、(株)リガク製熱機械分析装置(Thermo Plus TMA8310)を使用して、引張加重法で熱機械分析を行った。試験片を前記装置に装着後、荷重1g、昇温速度5℃/分の測定条件にて連続して2回測定した。2回目の測定において、25℃から150℃までの平均線熱膨張率及び150℃から240℃の平均線熱膨張率を算出した。
<Evaluation of linear thermal expansion coefficient (CTE)>
The adhesive films obtained in Examples and Comparative Examples were heated at 200 ° C. for 90 minutes to thermally cure the resin composition layer. The cured product was cut into a test piece having a width of about 5 mm and a length of about 15 mm, and thermomechanical analysis was performed by a tensile load method using a thermomechanical analyzer manufactured by Rigaku Corporation (Thermo Plus TMA8310). After mounting the test piece on the apparatus, the test piece was measured twice continuously under the measurement conditions of a load of 1 g and a heating rate of 5 ° C./min. In the second measurement, an average linear thermal expansion coefficient from 25 ° C. to 150 ° C. and an average linear thermal expansion coefficient from 150 ° C. to 240 ° C. were calculated.
<100℃の溶融粘度測定>
実施例及び比較例で作製した接着フィルムにおける樹脂組成物層の溶融粘度を測定した。(株)ユー・ビー・エム製型式Rheosol−G3000を使用して、樹脂量は1g、直径18mmのパラレルプレートを使用し、開始温度60℃から200℃まで、昇温速度5℃/分、測定温度間隔2.5℃、振動1Hz/degの測定条件にて溶融粘度を測定した。
<Measurement of melt viscosity at 100 ° C.>
The melt viscosity of the resin composition layer in the adhesive films prepared in Examples and Comparative Examples was measured. Using UBM Model Rheosol-G3000, using a parallel plate with a resin amount of 1 g and a diameter of 18 mm, starting temperature from 60 ° C. to 200 ° C., heating rate of 5 ° C./min, measurement The melt viscosity was measured under the measurement conditions of a temperature interval of 2.5 ° C. and a vibration of 1 Hz / deg.
[実施例1]
ナフトール型エポキシ樹脂(新日鉄住金化学(株)製「ESN−475V」、エポキシ当量約340の不揮発分65質量%のMEK溶液)15質量部、更に液状ビスフェノールA型エポキシ樹脂(三菱化学(株)製「jER828EL」、エポキシ当量約185)20質量部、フェノキシ樹脂溶液(三菱化学(株)製「YX6954BH30」、重量平均分子量40000、不揮発分30質量%のMEKとシクロヘキサノンとの混合溶液)20質量部、ビフェニルアラルキル型エポキシ樹脂(エポキシ当量269、日本化薬(株)製「NC3000L」)45部、活性エステル化合物(DIC(株)製「HP8000−65T」、活性基当量約223の不揮発分65質量%のトルエン溶液)20質量部、トリアジン含有クレゾールノボラック樹脂(DIC(株)製「LA3018−50P」、フェノール当量約151、不揮発分50質量%の2―メトキシプロパノール溶液)20質量部、4−ジメチルアミノピリジン(DMAP)の10質量%のMEK溶液3質量部、及び球形シリカ((株)アドマテックス製「SO−C2」をアミノシランで表面処理したもの、平均粒子径0.5μm)315質量部、ガラス繊維A(セントラルグラスファイバー(株)製「EFDE50−01」、平均繊維長50μm、繊維径6μm)10質量部を混合後、MEK30質量部を添加し、高圧分散機で均一に分散して、樹脂組成物ワニスを作製した。
次に、かかる樹脂組成物ワニスをポリエチレンテレフタレートフィルム(厚さ38μm、以下PETフィルムと略す。)上に、乾燥後の樹脂組成物層の厚みが25μmとなるようにダイコーターにて均一に塗布し、80〜100℃で5分間乾燥した。次いで、樹脂組成物層の表面に厚さ15μmのポリプロピレンフィルムを貼り合わせながら、樹脂組成物層をロール状に巻き取ってロール状の接着フィルムを得た。ロール状の接着フィルムを幅507mmにスリットし、507×336mmサイズのシート状の接着フィルムを得た。
[Example 1]
15 parts by mass of naphthol type epoxy resin (“ESN-475V” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., MEK solution having a nonvolatile content of 65% by mass with an epoxy equivalent of about 340), and liquid bisphenol A type epoxy resin (manufactured by Mitsubishi Chemical Corporation) 20 parts by mass of “jER828EL”, epoxy equivalent of about 185), 20 parts by mass of a phenoxy resin solution (“YX6954BH30” manufactured by Mitsubishi Chemical Co., Ltd., weight average molecular weight 40000, non-volatile content of 30% by mass of MEK and cyclohexanone) 45 parts of biphenyl aralkyl type epoxy resin (epoxy equivalent 269, “NC3000L” manufactured by Nippon Kayaku Co., Ltd.), active ester compound (“HP8000-65T” manufactured by DIC Corporation), non-volatile content 65% by mass of active group equivalent about 223 Toluene solution) 20 parts by mass, triazine-containing cresol novolak 20 parts by mass of fat (“LA3018-50P” manufactured by DIC Corporation, phenol equivalent of about 151, 2-methoxypropanol solution having a nonvolatile content of 50% by mass), 10% by mass of MEK solution of 10% by mass of 4-dimethylaminopyridine (DMAP) 3 Parts by weight, and spherical silica ("SO-C2" manufactured by Admatechs Co., Ltd., surface-treated with aminosilane, average particle size 0.5 µm), 315 parts by weight, glass fiber A ("EFDE50" manufactured by Central Glass Fiber Co., Ltd.) -01 ", average fiber length 50 μm, fiber diameter 6 μm) After mixing 10 parts by mass, MEK 30 parts by mass was added and uniformly dispersed with a high-pressure disperser to prepare a resin composition varnish.
Next, such a resin composition varnish is uniformly coated on a polyethylene terephthalate film (thickness: 38 μm, hereinafter abbreviated as PET film) with a die coater so that the thickness of the resin composition layer after drying is 25 μm. And dried at 80 to 100 ° C. for 5 minutes. Subsequently, the resin composition layer was wound up in a roll shape while a 15 μm-thick polypropylene film was bonded to the surface of the resin composition layer to obtain a roll-shaped adhesive film. The roll-like adhesive film was slit to a width of 507 mm to obtain a sheet-like adhesive film having a size of 507 × 336 mm.
[実施例2]
球形シリカの配合量を315質量部から275質量部に変更し、ガラス繊維Aの配合量を10質量部から50質量部に変更したこと以外は、実施例1と同様にして、樹脂組成物ワニスを調製し、接着フィルムを作製した。
[Example 2]
Resin composition varnish in the same manner as in Example 1, except that the amount of spherical silica was changed from 315 parts by weight to 275 parts by weight and the amount of glass fiber A was changed from 10 parts by weight to 50 parts by weight. To prepare an adhesive film.
[実施例3]
球形シリカの配合量を315質量部から225質量部に変更し、ガラス繊維Aの配合量を10質量部から100質量部に変更したこと以外は、実施例1と同様にして、樹脂組成物ワニスを調製し、接着フィルムを作製した。
[Example 3]
Resin composition varnish in the same manner as in Example 1, except that the amount of spherical silica was changed from 315 parts by weight to 225 parts by weight and the amount of glass fiber A was changed from 10 parts by weight to 100 parts by weight. To prepare an adhesive film.
[実施例4]
球形シリカの配合量を315質量部から175質量部に変更し、ガラス繊維Aの配合量を10質量部から150質量部に変更したこと以外は、実施例1と同様にして、樹脂組成物ワニスを調製し、接着フィルムを作製した。
[Example 4]
Resin composition varnish in the same manner as in Example 1 except that the amount of spherical silica was changed from 315 parts by weight to 175 parts by weight and the amount of glass fiber A was changed from 10 parts by weight to 150 parts by weight. To prepare an adhesive film.
[実施例5]
球形シリカの配合量を315質量部から125質量部に変更し、ガラス繊維Aの配合量を10質量部を200質量部に変更したこと以外は、実施例1と同様にして、樹脂組成物ワニスを調製し、接着フィルムを作製した。
[Example 5]
Resin composition varnish in the same manner as in Example 1 except that the amount of spherical silica was changed from 315 parts by weight to 125 parts by weight and the amount of glass fiber A was changed from 10 parts by weight to 200 parts by weight. To prepare an adhesive film.
[実施例6]
ガラス繊維Aをガラス繊維B(日本バイリーン(株)製、平均繊維長77μm、繊維径1μm)に変更したこと以外は、実施例1と同様にして、樹脂組成物ワニスを調製し、接着フィルムを作製した。
[Example 6]
A resin composition varnish was prepared in the same manner as in Example 1 except that the glass fiber A was changed to glass fiber B (manufactured by Japan Vilene Co., Ltd., average fiber length 77 μm, fiber diameter 1 μm). Produced.
[比較例1]
球形シリカの配合量を315質量部から325質量部に変更し、ガラス繊維Aは配合しなかったこと以外は、実施例1と同様にして、樹脂組成物ワニスを調製し、接着フィルムを作製した。
[Comparative Example 1]
The resin composition varnish was prepared in the same manner as in Example 1 except that the amount of the spherical silica was changed from 315 parts by mass to 325 parts by mass and the glass fiber A was not added, and an adhesive film was produced. .
[比較例2]
球形シリカを配合せず、ガラス繊維A10質量部を325質量部に変更し、MEKを150部添加したこと以外は、実施例1と同様の配合をし、高圧分散機に投入を試みたが、樹脂とフィラーの相溶性が悪く分散は不可能であった。
[Comparative Example 2]
Although the spherical silica was not blended, 10 parts by weight of the glass fiber A was changed to 325 parts by weight, and except that 150 parts of MEK was added, the same blending as in Example 1 was attempted, and an attempt was made to put into a high-pressure disperser. Dispersion was impossible due to poor compatibility between the resin and the filler.
[比較例3]
活性エステル化合物を配合せず、トリアジン含有クレゾールノボラック樹脂(DIC(株)製「LA3018−50P」)20質量部を40質量部に変更したこと以外は、実施例3と同様にして、樹脂組成物ワニスを調製し、接着フィルムを作製した。
[Comparative Example 3]
Resin composition in the same manner as in Example 3 except that no active ester compound was blended and 20 parts by mass of triazine-containing cresol novolac resin (“LA3018-50P” manufactured by DIC Corporation) was changed to 40 parts by mass. A varnish was prepared to produce an adhesive film.
Claims (13)
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JP2013200309A JP6156020B2 (en) | 2013-09-26 | 2013-09-26 | Resin composition |
TW103127905A TWI632189B (en) | 2013-09-26 | 2014-08-14 | Resin composition |
KR20140126557A KR20150034629A (en) | 2013-09-26 | 2014-09-23 | Resin composition |
CN201410496323.4A CN104513458B (en) | 2013-09-26 | 2014-09-25 | Resin composition |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017055069A (en) * | 2015-09-11 | 2017-03-16 | 日立化成株式会社 | Insulative resin film and multilayer printed wiring board |
JP2017171817A (en) * | 2016-03-25 | 2017-09-28 | 日立化成株式会社 | Adhesive for semiconductor, semiconductor device and method for manufacturing semiconductor device |
KR20200097698A (en) | 2017-12-14 | 2020-08-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | Copper foil with insulating resin layer formed |
WO2020203418A1 (en) * | 2019-03-29 | 2020-10-08 | 三菱瓦斯化学株式会社 | Copper foil having insulating resin layer attached thereto, and laminate and laminate manufacture method each using same |
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JP6648425B2 (en) * | 2015-06-22 | 2020-02-14 | 味の素株式会社 | Resin composition |
JP6852332B2 (en) * | 2015-10-28 | 2021-03-31 | 味の素株式会社 | Adhesive film |
JP7046477B2 (en) * | 2016-07-01 | 2022-04-04 | 味の素株式会社 | Resin composition |
CN108752870A (en) * | 2018-05-28 | 2018-11-06 | 福建毅天自动化科技有限公司 | A kind of plc control panels of high insulation and preparation method thereof |
CN110903603B (en) * | 2019-12-05 | 2023-09-08 | 陕西生益科技有限公司 | Resin composition and application thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2017055069A (en) * | 2015-09-11 | 2017-03-16 | 日立化成株式会社 | Insulative resin film and multilayer printed wiring board |
JP2017171817A (en) * | 2016-03-25 | 2017-09-28 | 日立化成株式会社 | Adhesive for semiconductor, semiconductor device and method for manufacturing semiconductor device |
KR20200097698A (en) | 2017-12-14 | 2020-08-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | Copper foil with insulating resin layer formed |
WO2020203418A1 (en) * | 2019-03-29 | 2020-10-08 | 三菱瓦斯化学株式会社 | Copper foil having insulating resin layer attached thereto, and laminate and laminate manufacture method each using same |
KR20210149683A (en) | 2019-03-29 | 2021-12-09 | 미츠비시 가스 가가쿠 가부시키가이샤 | Copper foil provided with an insulating resin layer, and a laminate using the same, and a method for manufacturing a laminate |
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CN104513458A (en) | 2015-04-15 |
TW201522483A (en) | 2015-06-16 |
KR20150034629A (en) | 2015-04-03 |
TWI632189B (en) | 2018-08-11 |
CN104513458B (en) | 2018-12-14 |
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