JP2015041388A - 記憶装置、及び半導体装置 - Google Patents
記憶装置、及び半導体装置 Download PDFInfo
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- JP2015041388A JP2015041388A JP2013170069A JP2013170069A JP2015041388A JP 2015041388 A JP2015041388 A JP 2015041388A JP 2013170069 A JP2013170069 A JP 2013170069A JP 2013170069 A JP2013170069 A JP 2013170069A JP 2015041388 A JP2015041388 A JP 2015041388A
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- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 206
- 238000003860 storage Methods 0.000 title abstract description 19
- 238000003491 array Methods 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 60
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
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- 239000000758 substrate Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 22
- 238000000034 method Methods 0.000 description 21
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- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 101100166255 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CEP3 gene Proteins 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
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- 238000004544 sputter deposition Methods 0.000 description 8
- 101100495436 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CSE4 gene Proteins 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
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- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
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- 229910052732 germanium Inorganic materials 0.000 description 5
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
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- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 1
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- 229910052688 Gadolinium Inorganic materials 0.000 description 1
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- 229910052765 Lutetium Inorganic materials 0.000 description 1
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- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
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- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
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- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
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- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 239000002159 nanocrystal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- Thin Film Transistor (AREA)
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013170069A JP2015041388A (ja) | 2013-08-20 | 2013-08-20 | 記憶装置、及び半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013170069A JP2015041388A (ja) | 2013-08-20 | 2013-08-20 | 記憶装置、及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015041388A true JP2015041388A (ja) | 2015-03-02 |
| JP2015041388A5 JP2015041388A5 (enrdf_load_stackoverflow) | 2016-09-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013170069A Withdrawn JP2015041388A (ja) | 2013-08-20 | 2013-08-20 | 記憶装置、及び半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2015041388A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017068891A (ja) * | 2015-09-30 | 2017-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
| JP2019008852A (ja) * | 2017-06-23 | 2019-01-17 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JPWO2020109901A1 (enrdf_load_stackoverflow) * | 2018-11-26 | 2020-06-04 | ||
| WO2020201865A1 (ja) * | 2019-03-29 | 2020-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05182470A (ja) * | 1991-12-27 | 1993-07-23 | Hitachi Ltd | 半導体多値メモリ |
| JP2008262632A (ja) * | 2007-04-11 | 2008-10-30 | Elpida Memory Inc | 半導体記憶装置 |
| JP2008293605A (ja) * | 2007-05-25 | 2008-12-04 | Elpida Memory Inc | 半導体記憶装置 |
| JP2011124360A (ja) * | 2009-12-10 | 2011-06-23 | Fujifilm Corp | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
| JP2011155249A (ja) * | 2009-12-28 | 2011-08-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2012119048A (ja) * | 2010-09-29 | 2012-06-21 | Semiconductor Energy Lab Co Ltd | 半導体メモリ装置およびその駆動方法 |
| JP2012134475A (ja) * | 2010-12-03 | 2012-07-12 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜および半導体装置 |
| JP2013038400A (ja) * | 2011-07-08 | 2013-02-21 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
| JP2013137853A (ja) * | 2011-12-02 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 記憶装置および記憶装置の駆動方法 |
-
2013
- 2013-08-20 JP JP2013170069A patent/JP2015041388A/ja not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05182470A (ja) * | 1991-12-27 | 1993-07-23 | Hitachi Ltd | 半導体多値メモリ |
| JP2008262632A (ja) * | 2007-04-11 | 2008-10-30 | Elpida Memory Inc | 半導体記憶装置 |
| JP2008293605A (ja) * | 2007-05-25 | 2008-12-04 | Elpida Memory Inc | 半導体記憶装置 |
| JP2011124360A (ja) * | 2009-12-10 | 2011-06-23 | Fujifilm Corp | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
| JP2011155249A (ja) * | 2009-12-28 | 2011-08-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2012119048A (ja) * | 2010-09-29 | 2012-06-21 | Semiconductor Energy Lab Co Ltd | 半導体メモリ装置およびその駆動方法 |
| JP2012134475A (ja) * | 2010-12-03 | 2012-07-12 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜および半導体装置 |
| JP2013038400A (ja) * | 2011-07-08 | 2013-02-21 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
| JP2013137853A (ja) * | 2011-12-02 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 記憶装置および記憶装置の駆動方法 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017068891A (ja) * | 2015-09-30 | 2017-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
| JP2021009750A (ja) * | 2015-09-30 | 2021-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2019008852A (ja) * | 2017-06-23 | 2019-01-17 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JPWO2020109901A1 (enrdf_load_stackoverflow) * | 2018-11-26 | 2020-06-04 | ||
| WO2020109901A1 (ja) * | 2018-11-26 | 2020-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置、二次電池システム |
| WO2020201865A1 (ja) * | 2019-03-29 | 2020-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11948626B2 (en) | 2019-03-29 | 2024-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistors with silicon and metal oxide channels |
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