JP2015032780A - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP2015032780A
JP2015032780A JP2013163185A JP2013163185A JP2015032780A JP 2015032780 A JP2015032780 A JP 2015032780A JP 2013163185 A JP2013163185 A JP 2013163185A JP 2013163185 A JP2013163185 A JP 2013163185A JP 2015032780 A JP2015032780 A JP 2015032780A
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gas
cleaning
processing
discharge
plasma
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Japanese (ja)
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JP2015032780A5 (https=
Inventor
小林　浩之
Hiroyuki Kobayashi
浩之 小林
誠 縄田
Makoto Nawata
誠 縄田
光 小山
Hikari Koyama
光 小山
和幸 池永
Kazuyuki Ikenaga
和幸 池永
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to JP2013163185A priority Critical patent/JP2015032780A/ja
Publication of JP2015032780A publication Critical patent/JP2015032780A/ja
Publication of JP2015032780A5 publication Critical patent/JP2015032780A5/ja
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JP2013163185A 2013-08-06 2013-08-06 プラズマ処理装置及びプラズマ処理方法 Pending JP2015032780A (ja)

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JP2013163185A JP2015032780A (ja) 2013-08-06 2013-08-06 プラズマ処理装置及びプラズマ処理方法

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JP2013163185A JP2015032780A (ja) 2013-08-06 2013-08-06 プラズマ処理装置及びプラズマ処理方法

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JP2015032780A true JP2015032780A (ja) 2015-02-16
JP2015032780A5 JP2015032780A5 (https=) 2016-09-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180032153A (ko) 2016-09-21 2018-03-29 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257197A (ja) * 2000-03-10 2001-09-21 Hitachi Ltd 半導体デバイスの製造方法および製造装置
JP2003332304A (ja) * 2002-05-17 2003-11-21 Sony Corp ドライエッチング装置のクリーニング方法
JP2004031970A (ja) * 2003-06-30 2004-01-29 Hitachi Ltd 半導体素子の製造方法
JP2005056925A (ja) * 2003-08-06 2005-03-03 Hitachi Ltd プラズマ処理装置および処理室内壁面安定化方法
JP2008153365A (ja) * 2006-12-15 2008-07-03 Renesas Technology Corp 半導体装置の製造方法
JP2009016611A (ja) * 2007-07-05 2009-01-22 Hitachi High-Technologies Corp プラズマエッチング処理方法
JP2012234991A (ja) * 2011-05-02 2012-11-29 Panasonic Corp 基板のプラズマ処理方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257197A (ja) * 2000-03-10 2001-09-21 Hitachi Ltd 半導体デバイスの製造方法および製造装置
JP2003332304A (ja) * 2002-05-17 2003-11-21 Sony Corp ドライエッチング装置のクリーニング方法
JP2004031970A (ja) * 2003-06-30 2004-01-29 Hitachi Ltd 半導体素子の製造方法
JP2005056925A (ja) * 2003-08-06 2005-03-03 Hitachi Ltd プラズマ処理装置および処理室内壁面安定化方法
JP2008153365A (ja) * 2006-12-15 2008-07-03 Renesas Technology Corp 半導体装置の製造方法
JP2009016611A (ja) * 2007-07-05 2009-01-22 Hitachi High-Technologies Corp プラズマエッチング処理方法
JP2012234991A (ja) * 2011-05-02 2012-11-29 Panasonic Corp 基板のプラズマ処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180032153A (ko) 2016-09-21 2018-03-29 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 방법
US10056236B2 (en) 2016-09-21 2018-08-21 Hitachi High-Technologies Corporation Plasma processing method

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