JP2015029025A5 - - Google Patents

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Publication number
JP2015029025A5
JP2015029025A5 JP2013158314A JP2013158314A JP2015029025A5 JP 2015029025 A5 JP2015029025 A5 JP 2015029025A5 JP 2013158314 A JP2013158314 A JP 2013158314A JP 2013158314 A JP2013158314 A JP 2013158314A JP 2015029025 A5 JP2015029025 A5 JP 2015029025A5
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JP
Japan
Prior art keywords
layer
diffraction grating
cladding layer
forming
plane index
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JP2013158314A
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English (en)
Japanese (ja)
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JP2015029025A (ja
JP6251934B2 (ja
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Priority to JP2013158314A priority Critical patent/JP6251934B2/ja
Priority claimed from JP2013158314A external-priority patent/JP6251934B2/ja
Priority to US14/446,004 priority patent/US9331456B2/en
Publication of JP2015029025A publication Critical patent/JP2015029025A/ja
Publication of JP2015029025A5 publication Critical patent/JP2015029025A5/ja
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JP2013158314A 2013-07-30 2013-07-30 半導体レーザの製造方法 Active JP6251934B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013158314A JP6251934B2 (ja) 2013-07-30 2013-07-30 半導体レーザの製造方法
US14/446,004 US9331456B2 (en) 2013-07-30 2014-07-29 Method of manufacturing semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013158314A JP6251934B2 (ja) 2013-07-30 2013-07-30 半導体レーザの製造方法

Publications (3)

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JP2015029025A JP2015029025A (ja) 2015-02-12
JP2015029025A5 true JP2015029025A5 (https=) 2016-09-15
JP6251934B2 JP6251934B2 (ja) 2017-12-27

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JP2013158314A Active JP6251934B2 (ja) 2013-07-30 2013-07-30 半導体レーザの製造方法

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US (1) US9331456B2 (https=)
JP (1) JP6251934B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7145936B2 (ja) * 2018-04-04 2022-10-03 三菱電機株式会社 半導体レーザおよびその製造方法
WO2020026330A1 (ja) * 2018-07-31 2020-02-06 三菱電機株式会社 半導体レーザ装置の製造方法、および半導体レーザ装置
US12355210B1 (en) * 2024-11-22 2025-07-08 Hiefo Corporation Semiconductor waveguide optical gain device with lateral current confinement

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH084169B2 (ja) * 1986-08-28 1996-01-17 ソニー株式会社 化合物半導体レ−ザ−
JPH0834330B2 (ja) * 1988-03-22 1996-03-29 キヤノン株式会社 半導体レーザ装置
JP3071021B2 (ja) * 1991-02-15 2000-07-31 三洋電機株式会社 半導体レーザ装置の製造方法
JP2945546B2 (ja) * 1991-09-20 1999-09-06 富士通株式会社 ストライプレーザダイオードおよびその製造方法
JP2956425B2 (ja) * 1993-07-28 1999-10-04 松下電器産業株式会社 半導体レーザおよびその製造方法
US6639926B1 (en) * 1998-03-25 2003-10-28 Mitsubishi Chemical Corporation Semiconductor light-emitting device
JP2003204115A (ja) * 2001-11-02 2003-07-18 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
US7573928B1 (en) * 2003-09-05 2009-08-11 Santur Corporation Semiconductor distributed feedback (DFB) laser array with integrated attenuator
JP2009238913A (ja) * 2008-03-26 2009-10-15 Mitsubishi Electric Corp 分布帰還型半導体レーザ
JP5440304B2 (ja) * 2010-03-19 2014-03-12 富士通株式会社 光半導体装置及びその製造方法
JP5545670B2 (ja) 2010-04-27 2014-07-09 住友電工デバイス・イノベーション株式会社 光半導体装置およびその製造方法
JP5599243B2 (ja) * 2010-07-06 2014-10-01 富士通株式会社 光半導体素子及びその製造方法、並びに光装置
JP5880063B2 (ja) * 2012-01-18 2016-03-08 住友電気工業株式会社 光集積素子の製造方法

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