JP2015012104A - Semiconductor light-emitting device and light device using the same - Google Patents
Semiconductor light-emitting device and light device using the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Abstract
Description
本発明は、半導体発光装置およびそれを用いた照明装置に関する。 The present invention relates to a semiconductor light emitting device and a lighting device using the same.
ＬＥＤ（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ）等の発光素子を備えた発光体を有する照明装置は、従来の白熱電球や蛍光灯などと比較して長寿命化、省エネルギ化を図ることができるため、近年注目が集まっている。一方、ＬＥＤは、光の直進性が強いことが知られており、照明機器として期待される光の放射性能を生み出すためには、ＬＥＤからの光の放射角を拡げたり狭くしたり、あるいは、途中の経路に拡散部材や反射部材や集光部材を配置して配光を制御する必要がある。とくに、ＬＥＤ電球、ＬＥＤシーリングライトなどの照明装置では、基板平面上にＬＥＤを配置して発光体を構成しており、ＬＥＤの発光面が基板の法線方向に向いているため基板の法線方向への光の放射量は多くなっている。これに対して、基板の水平方向への光の放射量は少なくなってしまう。そこで、光拡散材を含有した光透過性の樹脂で成形されたカバー材によって配光を制御し、基板の水平方向における照明装置の光の放射量を改善している。配光の改善方法の一つとして、基板上に側面発光型のＬＥＤを混載する方法がある。 In recent years, an illuminating device having a light emitting element including a light emitting element such as an LED (Light Emitting Diode) has been attracting attention in recent years because it can have a longer life and energy saving as compared with a conventional incandescent bulb or a fluorescent lamp. Gathered. On the other hand, LED is known to have strong light straightness, and in order to produce the light emission performance expected as a lighting device, the emission angle of light from the LED is increased or decreased, or It is necessary to control the light distribution by arranging a diffusing member, a reflecting member, and a light collecting member in the middle path. In particular, in lighting devices such as LED bulbs and LED ceiling lights, LEDs are arranged on a substrate plane to form a light emitter, and the normal surface of the substrate because the light emitting surface of the LED faces the normal direction of the substrate. The amount of light emitted in the direction is increasing. In contrast, the amount of light emitted in the horizontal direction of the substrate is reduced. Therefore, the light distribution is controlled by a cover material formed of a light-transmitting resin containing a light diffusing material, and the amount of light emitted from the lighting device in the horizontal direction of the substrate is improved. As one method for improving the light distribution, there is a method in which side-emitting LEDs are mixedly mounted on a substrate.
そこで、このような技術に関連して、例えば特許文献１および特許文献２には、側面発光型ＬＥＤの構造が記載されている。 Therefore, in relation to such a technique, for example, Patent Document 1 and Patent Document 2 describe the structure of a side-emitting LED.
しかしながら、特許文献１および特許文献２に記載の技術においては、サイドライト方式と呼ばれている導光板を用いた液晶バックライトユニット向けに導光板の端面の入光面に側面発光型ＬＥＤからの光を入光させるためにＬＥＤからの放射光の広がりを抑えている。したがって、照明装置の発光体に特許文献１，２に記載の側面発光型ＬＥＤを採用した場合には放射角が狭いために照明装置のカバー上での光ムラの原因となってしまう恐れがある。本発明はこのような事情に鑑みて為されたものであり、その目的は、従来よりも放射角を拡げた半導体発光装置および、それを用いて放射特性と光ムラを改善した照明装置を提供することにある。 However, in the techniques described in Patent Literature 1 and Patent Literature 2, a liquid crystal backlight unit using a light guide plate referred to as a sidelight method is used to emit light from a side-emitting LED on a light incident surface of an end surface of the light guide plate. In order to make light incident, the spread of radiated light from the LED is suppressed. Therefore, when the side-emitting LED described in Patent Documents 1 and 2 is used as the light emitter of the lighting device, the radiation angle is narrow, which may cause light unevenness on the cover of the lighting device. . The present invention has been made in view of such circumstances, and an object of the present invention is to provide a semiconductor light emitting device having a wider radiation angle than before and a lighting device using the same to improve radiation characteristics and light unevenness. There is to do.
本発明者らは前記課題を解決するべく鋭意検討した結果、基板に搭載される略直方体形状の本体と、該本体に設けられた凹み部である第１キャビティと、第１キャビティの底面に載置される発光素子と、前記第１キャビティ周りの一部に設けられる壁部と、前記発光素子を覆い前記第１キャビティよりも盛り上がるように設けられる第１の封止樹脂と、前記第１の封止樹脂と前記壁部とで構成される凹みを埋め、かつ前記壁部寄りに盛り上がるように設けられる第２の封止樹脂と、を有し、
前記本体は、前記第１キャビティの底面が前記基板と略垂直となり、かつ前記壁部が前記基板側に位置するように、前記基板に搭載されることにより前記課題を解決できることを見出し、本発明を完成させた。
As a result of intensive studies to solve the above problems, the present inventors have mounted a substantially rectangular parallelepiped main body mounted on a substrate, a first cavity that is a recess provided in the main body, and a bottom surface of the first cavity. A light emitting element to be placed, a wall part provided around a part of the first cavity, a first sealing resin that covers the light emitting element and is raised from the first cavity, and the first A second sealing resin provided so as to fill a recess composed of a sealing resin and the wall portion and to rise toward the wall portion;
The present invention has found that the problem can be solved by mounting the main body on the substrate such that the bottom surface of the first cavity is substantially perpendicular to the substrate and the wall portion is positioned on the substrate side. Was completed.
本発明に拠れば、放射角を拡げた半導体発光装置、および、それを用いて放射特性と光ムラを改善した照明装置を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the semiconductor light-emitting device which extended the radiation angle, and the illuminating device which improved the radiation characteristic and the light nonuniformity using it can be provided.
以下、図面を参照しながら本発明を実施するための形態を説明する。
［１．第１実施形態］
図１は、第１実施形態に係る半導体発光装置の断面図である。図２は、第１実施形態に係る樹脂が塗布されていない状態の半導体発光装置の斜視図である。
DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
[1. First Embodiment]
FIG. 1 is a cross-sectional view of the semiconductor light emitting device according to the first embodiment. FIG. 2 is a perspective view of the semiconductor light emitting device in a state where the resin according to the first embodiment is not applied.
図１および図２に示すように、半導体発光装置１１は、略直方体形状の本体１１ａと、後述する第１キャビティ１２内に設けられる発光素子１と、発光素子１を覆うように設けられる第１の封止樹脂３と、第１の封止樹脂３の一部を覆うように設けられる第２の封止樹脂４と、から構成されている。 As shown in FIGS. 1 and 2, the semiconductor light emitting device 11 includes a substantially rectangular parallelepiped main body 11 a, a light emitting element 1 provided in a first cavity 12 to be described later, and a first provided to cover the light emitting element 1. The sealing resin 3 and a second sealing resin 4 provided so as to cover a part of the first sealing resin 3.
半導体発光装置１１は、基板１０に搭載される。 The semiconductor light emitting device 11 is mounted on the substrate 10.
図１のような状態における半導体発光装置１１の方向を、基板側方向、照射側方向とする。 The direction of the semiconductor light emitting device 11 in the state as shown in FIG. 1 is a substrate side direction and an irradiation side direction.
本体１１ａは略直方体形状の部材である。本体１１ａには凹み部である第２キャビティ１３と、第２キャビティ１３内に設けられた凹み部である第１キャビティ１２と、が設けられている。第２キャビティ１３は本体１１ａの連続する２面の角部を略直方体形状に凹ませるように設けられている。半導体発光装置１１は、第２キャビティ１３が基板１０を向くことのないように基板１０に搭載される。半導体発光装置１１を基板１０に搭載した状態で、第２キャビティ１３の基板１０側の壁面を第２基板側壁面１３ａとする。第２基板側壁面（壁部）１３ａと略垂直で、かつ前記連続する２面のうちの１面と対向する面を第２底面１３ｂとする。第２基板側壁面１３ａと略垂直な残りの２面のうちの一方の面を第２右側面１３ｃ,他方の面を第２左側面１３ｄとする。 The main body 11a is a substantially rectangular parallelepiped member. The main body 11 a is provided with a second cavity 13 that is a recessed portion and a first cavity 12 that is a recessed portion provided in the second cavity 13. The 2nd cavity 13 is provided so that the corner | angular part of the 2 continuous surfaces of the main body 11a may be dented in a substantially rectangular parallelepiped shape. The semiconductor light emitting device 11 is mounted on the substrate 10 so that the second cavity 13 does not face the substrate 10. In a state where the semiconductor light emitting device 11 is mounted on the substrate 10, the wall surface on the substrate 10 side of the second cavity 13 is defined as a second substrate side wall surface 13a. A surface that is substantially perpendicular to the second substrate side wall surface (wall portion) 13a and faces one of the two continuous surfaces is defined as a second bottom surface 13b. One of the remaining two surfaces substantially perpendicular to the second substrate side wall surface 13a is defined as a second right side surface 13c, and the other surface is defined as a second left side surface 13d.
第１底面１３ｂには、第１キャビティ１２が設けられている。半導体発光装置１１を基板１０に搭載した状態で、第１キャビティ１２の基板１０側の壁面を第１基板側壁面１２ａとする。第２基板側壁面１２ａと略垂直で、かつ前記連続する２面のうちの１面と対向する面を第１底面１２ｂとする。第１基板側壁面１２ａと略垂直な残りの２面のうちの一方の面を第１右側面１２ｃ,他方の面を第１左側面１２ｄとする。第１基板側壁面１２ａと対向する面を第１照射側面１２ｅとする。残る１面を第１開口面１２ｆとする。 A first cavity 12 is provided on the first bottom surface 13b. In a state where the semiconductor light emitting device 11 is mounted on the substrate 10, the wall surface on the substrate 10 side of the first cavity 12 is defined as a first substrate side wall surface 12a. A surface that is substantially perpendicular to the second substrate side wall surface 12a and faces one of the two continuous surfaces is defined as a first bottom surface 12b. One of the remaining two surfaces substantially perpendicular to the first substrate side wall surface 12a is defined as a first right side surface 12c, and the other surface is defined as a first left side surface 12d. A surface facing the first substrate side wall surface 12a is defined as a first irradiation side surface 12e. The remaining one surface is defined as a first opening surface 12f.
発光素子１は、照射面が開口面１２ｆを向くように第１底面１２ｂに設けられる。第１基板側壁面１２ａと第１右側面１２ｃと第１左側面１２ｄと第１照射側面１２ｅは、第１底面１２ｂから開口面１２ｆに向けて面積が広がるように傾斜して設けられている。これにより発光素子１の照射面からの光を妨げる恐れが少なくなる。 The light emitting element 1 is provided on the first bottom surface 12b so that the irradiation surface faces the opening surface 12f. The first substrate side wall surface 12a, the first right side surface 12c, the first left side surface 12d, and the first irradiation side surface 12e are provided so as to be inclined so that the area increases from the first bottom surface 12b toward the opening surface 12f. As a result, the risk of blocking light from the irradiation surface of the light emitting element 1 is reduced.
なお、半導体発光装置１１は、外部電極パターン（図示せず）を有している。半導体発光装置１１の外部電極パターンと基板１０とは、はんだ部１４を介して給電されるとともに固定される。また、半導体発光装置１１は、外部電極パターンから内部電極パターン５まで導通しており、内部電極パターン５から発光素子１までは金属ワイヤー２によって結線され、給電されている。 The semiconductor light emitting device 11 has an external electrode pattern (not shown). The external electrode pattern of the semiconductor light emitting device 11 and the substrate 10 are supplied with power through the solder portion 14 and fixed. In addition, the semiconductor light emitting device 11 is electrically connected from the external electrode pattern to the internal electrode pattern 5, and the internal electrode pattern 5 to the light emitting element 1 are connected by the metal wire 2 and supplied with power.
本実施形態では、図２に示すように発光素子１が複数配列されている。複数配列される場合は、それぞれの発光素子１の間を金属ワイヤー２で結線する。なお、発光素子１は１個でも良い。 In the present embodiment, a plurality of light emitting elements 1 are arranged as shown in FIG. When a plurality of light emitting elements are arranged, the light emitting elements 1 are connected by metal wires 2. One light emitting element 1 may be used.
半導体発光装置１１において、発光素子１が搭載されている面（第１底面１２ｂ）から基板側の面までの長さ(Ｌ１)は、発光素子１が搭載されている面から照射側の面までの長さ（Ｌ２）よりも長い。 In the semiconductor light emitting device 11, the length (L1) from the surface on which the light emitting element 1 is mounted (first bottom surface 12b) to the surface on the substrate side is from the surface on which the light emitting element 1 is mounted to the surface on the irradiation side. Longer than (L2).
発光素子１としては、例えば青色光を発するＬＥＤが使用される。 As the light emitting element 1, for example, an LED emitting blue light is used.
第１の封止樹脂３は、例えばシリコーン樹脂等の透明樹脂に発光素子１から発せられる光を色変換する蛍光体が混合されているものである。このような蛍光体によって発光素子１からの青色光が色変換され、半導体発光素子１１の外部へは合成された白色光を発することができるようになっている。また、樹脂内を拡散しやすくするために散乱粒子を混合してもよい。 The first sealing resin 3 is a mixture of a phosphor that color-converts light emitted from the light emitting element 1 in a transparent resin such as a silicone resin. The blue light from the light emitting element 1 is color-converted by such a phosphor, and the synthesized white light can be emitted to the outside of the semiconductor light emitting element 11. Further, scattering particles may be mixed in order to facilitate diffusion in the resin.
第１の封止樹脂３は、発光素子１を覆い、第１キャビティ１２を埋め、さらに盛り上がるように設けられる。 The first sealing resin 3 is provided so as to cover the light emitting element 1, fill the first cavity 12, and rise further.
第２の封止樹脂４についてもシリコーン樹脂等の透明の封止樹脂を用い、蛍光体を混合してもよい。 The second sealing resin 4 may also be mixed with a phosphor using a transparent sealing resin such as a silicone resin.
第２の封止樹脂４は、盛り上がるように設けられた第１の封止樹脂３と第２基板側壁面１３ａなどとで構成される凹みを埋め、さらに盛り上がるように設けられる。この際、第２の封止樹脂４が第２基板壁面１３ａ寄りに盛り上がるように設けられる。第１の封止樹脂３を被覆しただけの段階では、矢印２１、２２に示す方向への光の放射量が矢印２３に示す方向への光の放射量よりも多くなっているが、第２の封止樹脂４を設けることによって矢印２３に示す方向への光の放射量も多くなり、基板１０に平行な方向から基板１０に垂直方向まで放射角が広がる。 The second sealing resin 4 is provided so as to fill a recess formed by the first sealing resin 3 provided so as to rise and the second substrate side wall surface 13a and so on. At this time, the second sealing resin 4 is provided so as to rise toward the second substrate wall surface 13a. At the stage where only the first sealing resin 3 is coated, the amount of light emitted in the direction indicated by arrows 21 and 22 is greater than the amount of light emitted in the direction indicated by arrow 23. By providing the sealing resin 4, the amount of light emitted in the direction indicated by the arrow 23 increases, and the radiation angle spreads from a direction parallel to the substrate 10 to a direction perpendicular to the substrate 10.
図３は、従来の側面発光型の半導体発光装置の断面図である。第１の封止樹脂３のみである。図３では、発光素子１から放出される光（たとえば青色光）の一部は第１の封止樹脂３を透過する。また、光の一部は、第１の封止樹脂３の中に混合されている蛍光体や散乱粒子により光の進路方向を変えて半導体発光素子４５の外部へ放射される。さらに、蛍光体によって色変換されて半導体発光素子４５の外部へ放射され、合成された白色光を発することができるようになっている。半導体発光装置４５の発光面の正面空間Ａへは放射光４１のように光が出やすい配置構造になっている。半導体発光装置４５が搭載されている基板１０の法線方向に及ぶ斜め空間Ｂへの光は、半導体発光装置４５から直接の放射光４２ａと基板１０からの反射光４２ｂで構成され、空間Ａへの光よりも光が出にくい構造になっている。基板１０の法線方向から半導体発光装置４５の背後空間Ｃへは光が出にくい構造になっている。 FIG. 3 is a cross-sectional view of a conventional side-emitting semiconductor light-emitting device. Only the first sealing resin 3 is present. In FIG. 3, part of light (for example, blue light) emitted from the light emitting element 1 passes through the first sealing resin 3. Further, a part of the light is radiated to the outside of the semiconductor light emitting element 45 by changing the direction of the light by the phosphor and the scattering particles mixed in the first sealing resin 3. Further, the color is converted by the phosphor and emitted to the outside of the semiconductor light emitting device 45 so that the synthesized white light can be emitted. In the front space A of the light emitting surface of the semiconductor light emitting device 45, the arrangement structure is such that light is easily emitted like the radiated light 41. The light to the oblique space B extending in the normal direction of the substrate 10 on which the semiconductor light emitting device 45 is mounted is composed of direct radiation light 42 a from the semiconductor light emitting device 45 and reflected light 42 b from the substrate 10, and enters the space A. It has a structure in which light is harder to emit than the light. Light is not easily emitted from the normal direction of the substrate 10 to the back space C of the semiconductor light emitting device 45.
図４は、第１実施形態に係る第２の樹脂４塗布工程前の半導体発光装置５５の断面図である。正面空間Ａへ放出されていた光の一部が第１の封止樹脂３の盛り上がりにより第１の封止樹脂３内での拡散効果が増強され、斜め空間Ｂへ光が放出されやすくなる。斜め空間Ｂへの光は直接光５２ａと第２基板側壁面１３ａでの反射光５２ｂで構成される。背後空間ｃへもわずかに直接光５３が出る。 FIG. 4 is a cross-sectional view of the semiconductor light emitting device 55 before the second resin 4 application step according to the first embodiment. The diffusion effect in the first sealing resin 3 is enhanced by the rise of the first sealing resin 3 for a part of the light emitted to the front space A, and the light is easily emitted to the oblique space B. The light to the oblique space B is composed of direct light 52a and reflected light 52b on the second substrate side wall surface 13a. The light 53 is slightly emitted directly to the back space c.
図５は、第１実施形態に係る半導体発光装置１１の断面図である。第２の封止樹脂４の盛り上がりにより、発光素子１から放出される光が第１の封止樹脂３および第の封止樹脂４の内部を正面空間Ａに向かって拡散するが、拡散距離が長くなるために光の一部が斜め空間Ｂおよび背後空間Ｃに進路を変えるために正面空間Ａに向かう放射光６１が減少し、封止樹脂３および４からの直接光が斜め空間Ｂおよび背後空間Ｃに放出される。これにより、放射角を拡げることができる。 FIG. 5 is a cross-sectional view of the semiconductor light emitting device 11 according to the first embodiment. Due to the rise of the second sealing resin 4, the light emitted from the light emitting element 1 diffuses inside the first sealing resin 3 and the second sealing resin 4 toward the front space A. Since part of the light changes its course to the oblique space B and the rear space C, the emitted light 61 directed to the front space A decreases, and the direct light from the sealing resins 3 and 4 becomes the oblique space B and the rear space. Released into the space C. Thereby, a radiation angle can be expanded.
次に、半導体発光装置１１を搭載した照明装置について説明する。 Next, an illumination device equipped with the semiconductor light emitting device 11 will be described.
図６は、第１実施形態に係る半導体発光装置を搭載した照明装置の側面図である。照明装置７０は、本体ケース７１の中に基板１０、電源回路、駆動回路等（図示せず）を収納し、基板１０は給電され、基板１０上に複数搭載されている半導体発光装置１１を駆動している。基板１０および本体ケース７１は半透明カバー７２で覆われている。各々の半導体発光装置１１から半透明カバー７２の内面側に光が照射される。図７は、半導体発光装置を搭載した照明装置の断面拡大図である。（ａ）は従来の半導体発光装置を搭載した場合の半導体発光装置を搭載した照明装置の断面拡大図である。（ｂ）は第１実施形態に係る半導体発光装置を搭載した場合の半導体発光装置を搭載した照明装置の断面拡大図である。図７（ａ）は、基板１０の法線方向に放射角４８を有する半導体発光装置４６を配置し、基板１０の外周部に側面側に放射角４７を有する半導体発光装置４７を配置している。半導体発光装置４６および４７から照射された光を半透明カバー７２の内面に受けるが、照射を受けにくい部分が発生し暗部４９となり、光ムラの原因となる。図７（ｂ）では、基板１０の外周部に第１実施形態に係る半導体発光装置１１を配置している。半導体発光装置１０の放射角６７が広いため、導体発光装置４６からの照射光とともに半透明カバー７２の内面全体に暗部を生じにくくすることができる。 FIG. 6 is a side view of an illumination device equipped with the semiconductor light emitting device according to the first embodiment. The lighting device 70 houses a substrate 10, a power supply circuit, a drive circuit, etc. (not shown) in a main body case 71. The substrate 10 is supplied with power and drives a plurality of semiconductor light emitting devices 11 mounted on the substrate 10. doing. The substrate 10 and the main body case 71 are covered with a translucent cover 72. Light is irradiated from the respective semiconductor light emitting devices 11 to the inner surface side of the translucent cover 72. FIG. 7 is an enlarged cross-sectional view of an illumination device equipped with a semiconductor light emitting device. (A) is the cross-sectional enlarged view of the illuminating device which mounts the semiconductor light-emitting device at the time of mounting the conventional semiconductor light-emitting device. (B) is a cross-sectional enlarged view of an illumination device equipped with a semiconductor light emitting device when the semiconductor light emitting device according to the first embodiment is installed. In FIG. 7A, a semiconductor light emitting device 46 having a radiation angle 48 is arranged in the normal direction of the substrate 10, and a semiconductor light emitting device 47 having a radiation angle 47 on the side surface side is arranged on the outer peripheral portion of the substrate 10. . The light emitted from the semiconductor light emitting devices 46 and 47 is received by the inner surface of the translucent cover 72, but a portion that is not easily irradiated is generated and becomes a dark portion 49, which causes light unevenness. In FIG. 7B, the semiconductor light emitting device 11 according to the first embodiment is disposed on the outer peripheral portion of the substrate 10. Since the emission angle 67 of the semiconductor light emitting device 10 is wide, it is possible to make it difficult to produce a dark portion on the entire inner surface of the semitransparent cover 72 together with the irradiation light from the conductor light emitting device 46.
次に、半導体発光装置１１の製造方法について説明する。 Next, a method for manufacturing the semiconductor light emitting device 11 will be described.
半導体発光装置１１は、通常の積層セラミック基板の製造プロセスで製作できる。セラミック基板の材料としては、アルミナ、窒化アルミニウムなどの高温焼成のものや、アルミナやシリカを含有したガラスセラミックのような低温焼成のものがあげられる。第１キャビティ１２，第２キャビティ１３は積層プレス前にグリーンシートを金型などにより抜いたものを積層プレス・焼成処理することによって形成される。配線はグリーンシートにビア加工を施し、印刷技術により導電性ペーストにてパターン形成する。外部に露出している外部電極パターンには金属めっき処理が施される。個片をマトリックス状に配置した集合基板として一括で製作される。本体１１ａの第２キャビティ１３における高さの異なる内壁は、集合基板において隣接する２個の個片上に１つのキャビティを構成するように形成し、発光素子１の搭載、樹脂封止の工程の後の分割工程で半割にすることによって簡単に製作することができる。また、詳細な説明は省略するが、セラミック基板のかわりに、たとえば銅合金の板材をプレス加工で打ち抜いて金属めっき処理を施したリードフレームにナイロン系樹脂やエポキシ系樹脂などをプリモールド処理することによって同様の構造を製作することが可能である。第１キャビティ１２の底面である第１底面１２ｂ上への発光素子１の固定には例えばシリコン系やエポキシ系のダイボンド材や金錫合金やはんだ材を使用する。金属ワイヤー２には、金・銀等のワイヤーを使用する。発光素子１がフリップチップタイプの発光素子の場合には、第１キャビティ１２の底面である第１底面１２ｂ上に電極パターンを形成し、銀シリコンペーストやはんだなどの導電性材料、あるいは、異方導電性樹脂にて電気的に接合する。このあとに第１の封止樹脂３をディスペンサなどを用いた定量塗布により発光素子１を覆い、加熱処理により第１の封止樹脂３を仮硬化させる。つぎに同様にディスペンサなどを用いた定量塗布により第２キャビティ１３の内壁と第１の封止樹脂３で構成される凹みを第２の封止樹脂４で埋め、さらに盛り上がらせる。加熱処理により本硬化させる。封止工程後の集合基板をダイシング装置によって個片に分割する。この個片を基板１１に例えばハンダリフロー搭載を実施して発光体として照明装置内に組み込む。 The semiconductor light emitting device 11 can be manufactured by a normal manufacturing process of a multilayer ceramic substrate. Examples of the material for the ceramic substrate include high-temperature fired materials such as alumina and aluminum nitride, and low-temperature fired materials such as glass ceramics containing alumina and silica. The first cavities 12 and the second cavities 13 are formed by laminating and firing a green sheet that has been extracted with a mold or the like before laminating press. For wiring, via processing is performed on a green sheet, and a pattern is formed with a conductive paste by a printing technique. The external electrode pattern exposed to the outside is subjected to metal plating. It is manufactured as a collective substrate in which individual pieces are arranged in a matrix. The inner walls having different heights in the second cavity 13 of the main body 11a are formed so as to form one cavity on two adjacent pieces in the collective substrate, and after the steps of mounting the light emitting element 1 and sealing the resin It can be easily manufactured by halving in the dividing step. Although detailed explanation is omitted, instead of the ceramic substrate, for example, a lead frame obtained by punching a copper alloy plate material by press working and performing a metal plating process is premolded with a nylon resin or an epoxy resin. It is possible to manufacture a similar structure. For fixing the light emitting element 1 onto the first bottom surface 12b which is the bottom surface of the first cavity 12, for example, a silicon-based or epoxy-based die bond material, a gold-tin alloy, or a solder material is used. For the metal wire 2, a wire such as gold or silver is used. When the light-emitting element 1 is a flip-chip type light-emitting element, an electrode pattern is formed on the first bottom surface 12b, which is the bottom surface of the first cavity 12, and a conductive material such as silver silicon paste or solder, or anisotropic Electrically joined with conductive resin. Thereafter, the first sealing resin 3 is covered with the first sealing resin 3 by quantitative application using a dispenser or the like, and the first sealing resin 3 is temporarily cured by heat treatment. Next, similarly, the recess formed by the inner wall of the second cavity 13 and the first sealing resin 3 is filled with the second sealing resin 4 by quantitative application using a dispenser or the like, and further raised. This is cured by heat treatment. The collective substrate after the sealing step is divided into individual pieces by a dicing apparatus. This individual piece is mounted on the substrate 11 by, for example, solder reflow and incorporated as a light emitter in the lighting device.
但し、半導体発光装置１１の製造方法は、前記した方法に限定されるものではなく適宜変更が可能である。
［２．第２実施形態］
図８は、第２実施形態に係る半導体発光装置の断面図である。図９は、第２実施形態に係る樹脂塗布工程前の半導体発光装置の斜視図である。以下、第１実施形態と異なる部分を詳述する。特に断らない部分については第１実施形態と同じ機能を備える。第１実施形態の第２キャビティ１３の第１基板側壁面（壁部）１３ａの代わりに発光素子１の搭載後にシリコーン系樹脂にシリカや酸化チタンを含有して高反射化した樹脂にてダム（壁部）３５をディスペンサを用いて塗布し、加熱硬化処理にて形成する。発光素子１を覆うように第１の封止樹脂３３が設けられ、さらにダム３５と第１の封止樹脂３３で構成される凹みを埋めて盛り上がるように第２の封止樹脂３４が設けられ、該第２の封止樹脂３５がダム３５寄りに盛り上がるように形成する。この偏心形状によって光の放射角を拡げることができる。
However, the manufacturing method of the semiconductor light emitting device 11 is not limited to the above-described method, and can be appropriately changed.
[2. Second Embodiment]
FIG. 8 is a cross-sectional view of the semiconductor light emitting device according to the second embodiment. FIG. 9 is a perspective view of the semiconductor light emitting device before the resin coating process according to the second embodiment. Hereinafter, a different part from 1st Embodiment is explained in full detail. Portions that are not particularly specified have the same functions as those in the first embodiment. In place of the first substrate side wall surface (wall portion) 13a of the second cavity 13 of the first embodiment, a dam (with a highly reflective resin containing silica or titanium oxide in a silicone resin after the light emitting element 1 is mounted) Wall part) 35 is applied using a dispenser and formed by heat curing. A first sealing resin 33 is provided so as to cover the light emitting element 1, and a second sealing resin 34 is further provided so as to fill up a recess formed by the dam 35 and the first sealing resin 33. The second sealing resin 35 is formed so as to rise toward the dam 35. With this eccentric shape, the radiation angle of light can be expanded.
１ 発光素子
２ 金属ワイヤー
３，３３ 第１の封止樹脂
４，３４ 第２の封止樹脂
５ 内部電極パターン
１０ 基板
１１ 半導体発光素子
１１ａ 本体
１２ 第１キャビティ
１２ａ 第１基板側壁面
１２ｂ 第１底面
１２ｃ 第１右側面
１２ｄ 第１左側面
１２ｅ 第１照射側面
１２ｆ 第１開口面
１３ 第２キャビティ
１３ａ 第２基板側壁面
１３ｂ 第２底面
１３ｃ 第２右側面
１３ｄ 第２左側面
１４ はんだ部
２１，２２，２３ 光線
３５ ダム
DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Metal wire 3,33 1st sealing resin 4,34 2nd sealing resin 5 Internal electrode pattern
DESCRIPTION OF SYMBOLS 10 Substrate 11 Semiconductor light emitting element 11a Main body 12 First cavity 12a First substrate side wall surface 12b First bottom surface 12c First right side surface 12d First left side surface 12e First irradiation side surface 12f First opening surface 13 Second cavity 13a Second substrate Side wall surface 13b Second bottom surface 13c Second right side surface 13d Second left side surface 14 Solder portions 21, 22, 23 Light beam 35 Dam
Claims (4)
前記本体は、前記第１キャビティの底面が前記基板と略垂直となり、かつ前記壁部が前記基板側に位置するように、前記基板に搭載されることを特徴とする半導体発光装置。
A substantially rectangular parallelepiped main body mounted on the substrate, a first cavity which is a recess provided in the main body, a light emitting element mounted on the bottom surface of the first cavity, and a part around the first cavity A wall portion provided, a first sealing resin that covers the light-emitting element and is provided so as to rise above the first cavity, and a recess formed by the first sealing resin and the wall portion is filled; And a second sealing resin provided so as to swell near the wall,
The semiconductor light emitting device according to claim 1, wherein the main body is mounted on the substrate such that a bottom surface of the first cavity is substantially perpendicular to the substrate and the wall portion is positioned on the substrate side.
前記本体および前記壁部は、セラミック基板により成形されることを特徴とする半導体発光装置。
The semiconductor light-emitting device according to claim 1.
The main body and the wall are formed of a ceramic substrate.
前記本体は、セラミック基板により成形され、
前記壁部は、酸化チタンを含有する樹脂の塗布により成形されることを特徴とする半導体発光装置。
The semiconductor light-emitting device according to claim 1.
The body is formed of a ceramic substrate;
The said wall part is shape | molded by application | coating of resin containing a titanium oxide, The semiconductor light-emitting device characterized by the above-mentioned.
前記半導体発光装置は、前記発光素子の照射面が当該照明装置の外周側を向くように前記基板に搭載されていることを特徴とする照明装置。 4. The semiconductor light-emitting device according to claim 1, the substrate on which the plurality of semiconductor light-emitting devices are mounted, and a lighting device connected to the substrate for lighting the semiconductor light-emitting device; In a lighting device having
The said semiconductor light-emitting device is mounted in the said board | substrate so that the irradiation surface of the said light emitting element may face the outer peripheral side of the said illuminating device.
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| JP2017143305A (en) * | 2017-05-10 | 2017-08-17 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing the same |
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