JP2015010980A - Probe device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe device which allows a good contact with an electrode pad of an optimum size appropriate to the electrical characteristics of a semiconductor device.SOLUTION: A probe device 2 comprises: a probe substrate 7; and a plurality of cantilever-type contact probe 8a and 8b. The contact probe 8a includes a contact part 11a having a relatively large contact area. The contact probes 8b includes a contact part 11b having a relatively small contact area. A distance DS between the contact part 11b and the probe substrate 7 is shorter than a distance DL between the contact part 11a and the probe substrate 7.

Description

  The present invention relates to a probe device, and more particularly to a probe device provided with a contact probe.

  The manufacturing process of a semiconductor device includes a process of evaluating electrical characteristics of the semiconductor device. In this step, a probe device provided with a probe substrate is used to electrically connect an external measuring device or the like to the semiconductor device. By bringing a contact probe provided on the probe substrate into contact with a predetermined electrode pad in the semiconductor device, electrical connection between the semiconductor device and the probe device is achieved.

  As a semiconductor device, for example, in a power semiconductor device in which an IGBT (Insulated Gate Bipolar Transistor) or the like is formed, an electrode pad having a relatively large size is generally formed, and a plurality of contact probes are brought into contact with the electrode pad. As a result, a large current of about several hundred amperes is passed.

  However, a large current is not supplied to all electrode pads of the semiconductor device. For example, an electrode pad that is electrically connected to the gate electrode has a small number of contact probes to be contacted, and the electrode pad may be a relatively small electrode pad. For this reason, electrode pads of different sizes are mixed in one power semiconductor device. Further, the number of contact probes that come into contact also varies depending on the electrode pad.

  In a conventional probe device in which a plurality of contact probes are installed, contact probes with the same specifications are installed with the same specifications. For this reason, the range (area) of probe marks formed on the electrode pad when the contact probe contacts the electrode pad is always the same. If the size of the electrode pad is designed in accordance with the area of the probe mark formed on the electrode pad to which a large current is applied, the electrode pad of a relatively small size cannot be sufficiently accommodated, The design will be constrained.

  As a document disclosing a probe device used when evaluating electrical characteristics of semiconductor devices having different sizes of semiconductor devices, there is Patent Document 1.

JP 2010-1222092 A

  In the conventional probe device, the area of the probe mark formed on the electrode pad is designed to be approximately the same, so that a probe mark corresponding to each size is formed for each of the electrode pads of different sizes. Thus, it has been difficult to properly contact the contact probe.

  Also, in the probe device disclosed in Patent Document 1, although it is said that the electrical characteristics of semiconductor devices having different sizes can be evaluated, a contact probe is provided for each of electrode pads having different sizes. It was difficult to contact properly.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a probe device that can satisfactorily contact an electrode pad of an optimal size corresponding to the electrical characteristics of a semiconductor device. That is.

  The probe device according to the present invention includes a probe substrate and a plurality of contact probes. The probe substrate is arranged so as to face the object to be measured with a space therebetween. The plurality of contact probes are arranged on the probe substrate, extend in a direction in which the object to be measured is located, and have contact portions that contact the object to be measured. Among the plurality of contact probes, the contact area of the contact portion of one contact probe is different from the contact area of the contact portion of another contact probe. The distance between the contact portion of one contact probe and the probe substrate is different from the distance between the contact portion of another contact probe and the probe substrate.

  According to the probe device of the present invention, the contact area of the contact portion of one contact probe is different from the contact area of the contact portion of another contact probe, and the distance between the contact portion of one contact probe and the probe substrate The distance between the contact portion of the other contact probe and the probe substrate is different. Thereby, it is possible to regulate the range of the probe mark formed on the measured part by the contact probe, and as the electrode pad of the object to be measured, the electrode pad of the optimum size corresponding to the electrical characteristics is arranged, The contact probe can be brought into good contact with the electrode pad.

1 is a perspective view showing a schematic configuration of a semiconductor test apparatus to which a probe apparatus according to each embodiment of the present invention is applied. It is a side view of the probe apparatus which concerns on Embodiment 1 of this invention. FIG. 6 is a side view showing a first state for explaining a procedure for evaluating electrical characteristics of the semiconductor device by the probe device in the embodiment. FIG. 4 is a side view showing a second state after the first state shown in FIG. 3 in the same embodiment. In the same embodiment, it is a top view which shows the probe trace formed in an electrode pad with a contact probe. It is a side view of the probe apparatus which concerns on Embodiment 2 of this invention. FIG. 7B is a side view for explaining the procedure for evaluating the electrical characteristics of the semiconductor device by the probe device in the embodiment, and FIG. 7A is a side view showing the first state, and FIG. ) Is a side view showing the second state after the first state, and FIG. 7C is a side view showing the third state after the second state. It is a side view of the probe apparatus which concerns on Embodiment 3 of this invention. In the same embodiment, it is a top view which shows the probe trace formed in an electrode pad with a contact probe. It is a side view of the probe apparatus which concerns on Embodiment 4 of this invention. In the same embodiment, it is a top view of the probe device In the same embodiment, it is a top view which shows the probe trace formed in an electrode pad with a contact probe. It is a side view of the probe apparatus which concerns on Embodiment 5 of this invention. In the embodiment, it is a side view of the probe apparatus which concerns on a modification.

  First, an outline of a semiconductor inspection apparatus to which the probe apparatus according to each embodiment is applied will be described.

  A semiconductor test apparatus is an apparatus that evaluates the electrical characteristics of a semiconductor device in a state where a semiconductor device as a device under test is placed on a predetermined stage. As shown in FIG. 1, the semiconductor test apparatus 1 moves the probe apparatus 2 for making electrical connection between the chuck stage 4 on which the semiconductor apparatus 5 is mounted, the semiconductor apparatus 5, and the probe apparatus 2. And a moving arm portion 3 for the purpose.

  Specifically, as the semiconductor device 5, the electrical characteristics of the semiconductor device 5 are measured in a state where a semiconductor wafer, a semiconductor chip itself, or the like is held on the chuck stage 4. The semiconductor device 5 is held on the chuck stage 4 by, for example, vacuum chucking or electrostatic chucking, but is not limited to such a method.

  When measuring the electrical characteristics, the semiconductor device 5 and the semiconductor test device 1 are electrically connected via the probe device 2. The contact probe of the probe device 2 comes into contact with a predetermined electrode pad formed on the semiconductor device. A moving arm unit 3 is attached to the probe device 2. The moving arm unit 3 enables the probe device 2 to move in the directions of three axes (X axis, Y axis, Z axis). In addition to the method of moving the probe device 2 by the moving arm unit 3, the desired semiconductor device and the probe device may be positioned by moving the chuck stage 4. Hereinafter, the probe apparatus 2 of the semiconductor test apparatus 1 will be specifically described.

Embodiment 1
The probe device according to Embodiment 1 will be described.

  As shown in FIG. 2, the probe device 2 includes a probe substrate 7 and a plurality of cantilever-type contact probes 8a and 8b. Each of the plurality of contact probes 8a and 8b is attached to the probe substrate 7 so as to extend in a direction in which the semiconductor device (predetermined electrode pad) is located. The angle θ1 formed between the contact probe 8a and the probe substrate 7 and the angle θ1 formed between the contact probe 8b and the probe substrate 7 are set to the same angle.

  Contact portions 11a and 11b that are in mechanical and electrical contact with electrode pads (not shown) of the semiconductor device are formed at the tip 12 of the contact probes 8a and 8b. The distal end portion 12 is subjected to needle-like drawing according to the area of the contact portions 11a and 11b. In this probe apparatus 2, at least a contact probe 8a having a contact portion 11a having a relatively large contact area and a contact probe 8b having a contact portion 11b having a relatively small contact area are attached as contact probes.

  The position (height) in the Z direction of the contact portion 11a is different from the position (height) in the Z direction of the contact portion 11b. That is, the contact probes 8a and 8b are set such that the distance DS between the contact portion 11b and the probe substrate 7 (insulating base 9) is shorter than the distance DL between the contact portion 11a and the probe substrate 7 (insulating base 9). Is attached to the probe substrate 7.

  An installation portion 14 to be attached to the insulating base 9 of the probe substrate 7 is provided at the end of the contact probe 8a, 8b opposite to the tip 12 thereof. The installation portion 14 is mechanically fixed to the insulating base 9 that forms the base of the probe substrate 7. In addition, a connection portion 15 that is electrically connected to the contact portion 11 and serves as an output end to the outside is provided at the end portion. The connecting portion 15 is electrically connected to the signal line 6 provided on the insulating base 9 via, for example, an electric wire or directly connected by solder or the like.

  Between the distal end portion 12 and the installation portion 14, a bending portion 13 is provided to be surely connected to the electrode pad by bending. That is, in the cantilever-type contact probes 8a and 8b, when the contact portion 11 contacts the electrode pad by relatively approaching the probe substrate 7 and the semiconductor device (electrode pad) and reducing the distance (interval) between them. In addition, the bent portions 13 of the contact probes 8a and 8b extending in a rod shape are bent.

  The contact probes 8a and 8b are made of a conductive metal material such as tungsten or beryllium copper, but are not limited to these materials. In particular, the tip portion 12 and the contact portion 11 may be coated with, for example, gold, palladium, tantalum, platinum, or the like from the viewpoint of improving conductivity and improving durability. Further, although the contact probes 8a and 8b of the probe device 2 described above have a structure in which only the tip 12 is inclined, a multistage crank contact probe may be applied as the contact probe. .

  In FIG. 2, for the sake of simplicity, only two contact probes 8a and 8b having contact portions 11 having different contact areas, which are featured, are shown, but three or more contact probes are provided. It may be.

  Next, a procedure for evaluating the electrical characteristics of the semiconductor device using the probe device 2 described above will be described.

  First, the semiconductor device 5 is placed and held on the chuck stage 4 of the semiconductor test apparatus 1 (see FIG. 1). Next, as shown in FIG. 3, the contact probe 8a first contacts the electrode pad 10a by gradually reducing the distance D (interval) between the probe substrate 7 and the chuck stage 4 (semiconductor device 5). Further, as shown in FIG. 4, the contact probe 8b contacts the electrode pad 10b by reducing the distance D (interval).

  The contact portion 11a of the contact probe 8a slides on the surface of the electrode pad 10a until the contact probe 8b contacts the electrode pad 10b after the contact probe 8a contacts the electrode pad 10a. In this case, a probe mark is formed.

  After the contact probe 8b contacts the electrode pad 10b, the distance D is further reduced to a predetermined distance, whereby the contact portion 11b of the contact probe 8b slides on the surface of the electrode pad 10b and the contact portion 11a of the contact probe 8a. Further slides on the surface of the electrode pad 10a. As a result, as shown in FIG. 5, probe marks 21a are formed on the surface of the electrode pad 10a by sliding the contact probe 8a. Further, a probe mark 21b is formed on the surface of the electrode pad 10b by sliding the contact probe 8b.

  Next, predetermined electrical characteristics of the semiconductor device are evaluated in a state where the contact probes 8a and 8b are in contact with the electrode pads 10a and 10b. After the evaluation of the electrical characteristics is completed, the probe substrate 7 and the semiconductor device 5 are separated until the distance D (interval) between the probe substrate 7 and the semiconductor device 5 reaches the initial distance, and a series of electrical characteristics is obtained. Is completed. The semiconductor device 5 whose electrical characteristics have been evaluated is removed from the chuck stage 4 and sent to the next process.

  In the probe device 2 described above, a contact probe 8a having a contact portion 11a having a relatively large contact area and a contact probe 8b having a contact portion 11b having a relatively small contact area are attached, and the position of the contact portion 11b ( (Z direction) is arrange | positioned in the position higher than the position (Z direction) of the contact part 11a.

  As a result, when the probe substrate 7 and the semiconductor device 5 are reduced to a predetermined distance (distance), the length that the contact portion 11b (contact probe 8b) having a small contact area slides on the surface of the electrode pad 10b is the contact length. The contact portion 11a (contact probe 8a) having a large area is shorter than the length of sliding on the surface of the electrode pad 10a.

  As a result, as shown in FIG. 5, in the probe mark 21a and the probe mark 21b, the length LB in which the center of the contact part 11b moves is shorter than the length LA in which the center of the contact part 11a moves, The length PLA of the trace 21b is shorter than the length PLB of the probe trace 21a, and the contact portion 11b can be brought into good contact with a relatively small electrode pad.

  Thus, in the probe device 2 described above, as the contact portions 11a and 11b of the contact probes 8a and 8b, the contact portion 11a having a large contact area and the contact portion 11b having a small contact area are provided, and the contact portion 11b is used as the contact portion. By arranging the electrode pads closer to the probe substrate 7 than 11a, an electrode pad of an optimal size corresponding to the electrical characteristics is arranged as an electrode pad of the semiconductor device, and the contact probe 8a, 8b can be contacted satisfactorily. By optimizing the size of the electrode pad, it is possible to reduce the size of the semiconductor device and contribute to downsizing and cost reduction of the semiconductor device. Conversely, the electrical characteristics can be evaluated by appropriately bringing the contact probe into contact with the electrode pad optimized according to the characteristics of the semiconductor device.

Embodiment 2
As a contact probe of the probe device described above, a cantilever contact probe has been described as an example. Here, a probe device provided with a spring-type contact probe will be described.

  As shown in FIG. 6, in the probe device 2, a spring-type contact probe 8 c is attached to the probe substrate 7 as a contact probe having a small contact area. A contact portion 11 c is provided at the distal end portion 12 of the contact probe 8 c, and an installation portion 14 attached to the insulating base 9 of the probe substrate 7 is provided at the end opposite to the distal end portion 12. A pushing portion 16 is provided between the tip portion 12 and the installation portion 14. A spring (not shown) is disposed in the installation portion 14.

  The distance DS between the contact portion 11c and the probe substrate 7 (insulating base 9) is shorter than the distance DL between the contact portion 11a and the probe substrate 7 (insulating base 9), and the contact portion 11c is shorter than the contact portion 11a. Contact probes 8c and 8b are attached to the probe substrate 7 so as to approach the probe substrate 7 side. Since the configuration other than this is the same as that of the probe apparatus shown in FIG. 2, the same reference numerals are given to the same members, and the description thereof will not be repeated unless necessary.

  Next, particularly the movement of the contact probe 8c when the electrical characteristics of the semiconductor device are evaluated by the probe device described above will be described.

  First, from the initial state shown in FIG. 7A, the probe substrate (not shown) is lowered downward (below the Z axis) and brought closer to the semiconductor device 5, thereby bringing the contact portion into contact as shown in FIG. 11c contacts the electrode pad 10b. Thereafter, by further lowering the probe substrate, as shown in FIG. 7C, the pushing portion 16 is pushed into the installation portion 14 via the spring member, and the contact portion 10c reliably contacts the electrode pad 10. become.

  In the spring-type contact probe 8c, since the contact probe 8c expands and contracts in the vertical direction, the contact portion 10c hardly slides on the surface of the electrode pad 10b, and is applied as a contact probe that makes contact with a smaller electrode pad. be able to.

Embodiment 3
In the first embodiment, the probe apparatus in which the angles formed between the contact probe and the probe substrate are set to the same angle has been described. Here, a probe apparatus provided with contact probes having different angles will be described.

  As shown in FIG. 8, at least a contact probe 8 a having a contact portion 11 a having a large contact area and a contact probe 8 b having a contact portion 11 b having a small contact area are attached to the probe substrate 7. The angle θ2 formed between the contact probe 8b and the probe substrate 7 is set larger than the angle θ1 formed between the contact probe 8a and the probe substrate 7 (θ1 <θ2). Since the configuration other than this is the same as that of the probe apparatus shown in FIG. 2, the same reference numerals are given to the same members, and the description thereof will not be repeated unless necessary.

  Next, the movement of the contact probes 8a and 8b when evaluating the electrical characteristics of the semiconductor device using the probe device described above will be described.

  The movement of the contact probes 8a and 8b is substantially the same as that of the probe apparatus described in the first embodiment. The distance D (see FIGS. 3 and 4) between the probe substrate 7 and the chuck stage 4 (semiconductor device 5) is gradually reduced, and the contact probe 8a comes into contact with the electrode pad 10a. And the contact probe 8b comes into contact with the electrode pad 10b.

  The contact portion 11a of the contact probe 8a slides on the surface of the electrode pad 10a until the contact probe 8b contacts the electrode pad 10b after the contact probe 8a contacts the electrode pad 10a. A probe mark is formed on the surface. After the contact probe 8b contacts the electrode pad 10b, the distance D is further reduced to a predetermined distance, whereby the contact portion 11b of the contact probe 8b slides on the surface of the electrode pad 10b and the contact portion of the contact probe 8a. 11a also slides further on the surface of the electrode pad 10a.

  As a result, as shown in FIG. 9, a probe mark 21a is formed on the surface of the electrode pad 10a by sliding the contact probe 8a. In addition, a probe mark 21c is formed on the surface of the electrode pad 10b by sliding the contact probe 8c.

  In this probe device 2, the angle θ2 formed between the contact probe 8 b and the probe substrate 7 is set larger than the angle θ1 formed between the contact probe 8 a and the probe substrate 7. Therefore, compared with the case of the probe device according to the first embodiment, in particular, in the probe mark 21c, the length LC that the center of the contact portion 11b moves is the center of the contact portion 11b (see FIG. 2 and the like). While becoming shorter than length LB (refer FIG. 5), the length PLC of the probe trace 21c is also shorter than the length PLB of the probe trace 21b. As a result, the contact portion 11c can be satisfactorily brought into contact with an electrode pad having a smaller size.

  The reason why the length LC that the center of the contact portion 11b moves is shorter is that the amount of bending of the bending portion 13 in the contact probe 8c is reduced by changing (increasing) the angle θ2. Thus, by changing the contact area of the contact portion of the contact probe and changing the angle between the contact probe and the probe substrate 7, the range (region) of the probe trace can be adjusted, and the electrode of the semiconductor device As the pad, an optimal electrode pad corresponding to the characteristic can be arranged. Conversely, the contact probe can be appropriately brought into contact with the electrode pad optimized in accordance with the characteristics of the semiconductor device.

  In the probe device described above, the case where the range of the probe trace is adjusted by changing the amount of bending of the bending portion by changing the angle formed by the contact probe and the probe substrate has been described. In addition, by changing the length, thickness, hardness, material, etc. of the bent portion of the contact probe, the range of the probe trace may be adjusted by changing the amount of bending. This is also true for probe devices according to other embodiments.

Embodiment 4
Here, variations of the arrangement of the contact probes on the probe substrate of the probe apparatus will be described.

  As shown in FIGS. 10 and 11, at least a contact probe 8 a having a contact portion 11 a having a large contact area and a contact probe 8 d having a contact portion 11 b having a small contact area are attached to the probe substrate 7. In plan view from the probe substrate 7, the direction in which the contact probe 8 a extends intersects the direction in which the contact probe 8 d extends. In this case, the contact probe 8a is disposed parallel to the X axis, and the contact probe 8d is disposed so as to intersect the X (Y) axis. Since the configuration other than this is the same as that of the probe apparatus shown in FIG. 2, the same reference numerals are given to the same members, and the description thereof will not be repeated unless necessary.

  Next, the movement of the contact probes 8a and 8d when evaluating the electrical characteristics of the semiconductor device using the probe device described above will be described.

  The movement of the contact probes 8a and 8d is substantially the same as that of the probe apparatus described in the first embodiment (see FIGS. 3 and 4). The distance D between the probe substrate 7 and the chuck stage 4 (semiconductor device 5) is gradually shortened, the contact probe 8a comes into contact with the electrode pad 10a, and the distance D is further shortened, so that the contact probe 8d becomes an electrode. It contacts the pad 10b (see FIGS. 3 and 4).

  The contact portion 11a of the contact probe 8a slides on the surface of the electrode pad 10a after the contact probe 8a contacts the electrode pad 10a until the contact probe 8d contacts the electrode pad 10b. A probe mark is formed on the surface. Since the distance D is further reduced to a predetermined distance after the contact probe 8d contacts the electrode pad 10b, the contact portion 11b of the contact probe 8d slides on the surface of the electrode pad 10b and the contact portion of the contact probe 8a. 11a also slides further on the surface of the electrode pad 10a (see FIGS. 3 and 4).

  As a result, as shown in FIG. 12, probe marks 21a are formed on the surface of the electrode pad 10a by sliding the contact probe 8a. Further, a probe mark 21d is formed on the surface of the electrode pad 10b by sliding the contact probe 8d.

  In particular, when the probe mark 21d shown in FIG. 12 is compared with the probe mark 21b shown in FIG. 5, the length LD in the sliding direction of the center of the contact part 11d and the center of the contact part 11b (see FIG. 2) are compared. The length LB in the sliding direction is substantially the same length, and the length PLB of the probe mark 21d and the length PLB of the probe mark 21b are substantially the same length.

  On the other hand, the length LDX of the X direction component of the length LD in the slide direction is shorter than the length LD. As described above, the length of the contact portion in a specific direction such as the X direction (or the Y direction) can be shortened, so that an electrode pad with a smaller size can be arranged, and a contact probe can be favorably placed on the electrode pad. Can be contacted.

  In the above-described probe device, the range (area) of the probe mark formed on the surface of the electrode pad by the contact probe can be changed, and the electrode pad of the optimum size corresponding to the electrical characteristics as the electrode pad of the semiconductor device The contact probe can be satisfactorily brought into contact with the electrode pad. By optimizing the size of the electrode pad, it is possible to reduce the size of the semiconductor device and contribute to downsizing and cost reduction of the semiconductor device. Conversely, the contact probe can be appropriately brought into contact with the electrode pad optimized in accordance with the characteristics of the semiconductor device.

Embodiment 5
Here, a probe device provided with a locking portion for locking the contact probe will be described.

  As shown in FIG. 13, at least a contact probe 8 a having a contact portion 11 a having a large contact area and a contact probe 8 b having a contact portion 11 b having a small contact area are attached to the probe substrate 7. The probe board 7 is provided with a locking portion 17 for locking the contact probes 8a and 8b. The locking portion 17 is disposed so as to intersect the direction in which the contact probes 8a and 8b extend. Since the configuration other than this is the same as that of the probe apparatus shown in FIG. 2, the same reference numerals are given to the same members, and the description thereof will not be repeated unless necessary.

  Next, the movement of the contact probes 8a and 8b when evaluating the electrical characteristics of the semiconductor device using the probe device described above will be described.

  The movement of the contact probes 8a and 8b is substantially the same as that of the probe device described in the first embodiment (see FIGS. 3 and 4). The distance D between the probe substrate 7 and the chuck stage 4 (semiconductor device 5) is gradually shortened, the contact probe 8a comes into contact with the electrode pad 10a, and the distance D is further shortened, so that the contact probe 8d becomes an electrode. It contacts the pad 10b (see FIGS. 3 and 4).

  The contact portion 11a of the contact probe 8a slides on the surface of the electrode pad 10a until the contact probe 8a contacts the electrode pad 10b after the contact probe 8a contacts the electrode pad 10a. A probe mark is formed (see FIGS. 3 and 4). When the distance D is further reduced to a predetermined distance after the contact probe 8b comes into contact with the electrode pad 10b, the end of the locking portion 17 comes into contact with the contact probes 8a and 8b from above.

  Until the locking portion 17 comes into contact, the contact portion 11b of the contact probe 8b slides on the surface of the electrode pad (not shown), and the contact portion 11a of the contact probe 8a is also on the electrode pad (not shown). Slide the surface further. As a result, a probe mark due to the contact probe 8a sliding and a probe mark due to the contact probe 8b sliding are formed on the electrode pad. At this time, the locking portion 17 comes into contact with the contact probes 8a and 8b from above to prevent the contact probes 8a and 8b from bending, thereby preventing the probe mark range from expanding beyond a desired range. be able to.

  In the probe device described above, the locking portion 17 that locks the contact probes 8a and 8b is attached to the probe substrate 7 as a stopper. Thereby, the range of the probe trace formed on the electrode pad by sliding the contact probes 8a and 8b can be regulated to a desired range.

  Further, it is preferable that the portion of the locking portion 17 that contacts the contact probes 8a and 8b is at least covered with an elastic member made of rubber or a resin material so that the contact probe is not damaged or impacted.

  The locking portion 17 is attached by being inserted through a through hole provided in the insulating base 9 of the probe substrate 7. For this reason, the position (height) at which the locking portion 17 and the contact probe abut can be easily adjusted, and the range of the probe trace can be easily adjusted to a desired range corresponding to the size of the electrode pad. it can.

  Furthermore, the position (height) at which the locking portion and the contact probe abut can also be changed by providing through holes at a plurality of locations in the insulating base 9 and changing the through holes through which the locking portions are inserted. The range of the probe mark can be easily adjusted to a desired range. Further, a screw may be provided in the locking portion, and the position (height) where the locking portion and the contact probe abut may be finely adjusted.

  The locking portion 17 and the contact probes 8a and 8b are disposed so that the locking portion 17 comes into contact with the contact probes 8a and 8b extending in a rod shape from a direction substantially orthogonal to each other. The part 17 can function reliably as a stopper.

  Further, in the probe device 2 described above, the case where the locking portion 17 is attached to the probe substrate 7 has been described as an example. However, as shown in FIG. 14, the locking portion 17 is provided for each of the contact probes 8a and 8b. It may be attached to. Also in this case, the engagement portion 17 is in contact with the probe substrate 7 (insulating base 9), so that the probe trace range formed on the electrode pad by sliding the contact probes 8a and 8b can be set to a desired range. Can be regulated.

  Further, in the probe substrate 7 (insulating base 9), the concave portion 18 that receives the end of the locking portion 17 is formed in the portion where the locking portion 17 abuts, so that the probe trace range can be reliably set to a desired range. Can be regulated.

  Furthermore, as shown in FIG. 14, a distance sensor 19 for measuring the distance from the semiconductor device (not shown) may be disposed on the probe substrate 7 (insulating base 9). The range of the probe trace can be regulated to a desired range also by stably controlling the distance between the probe device 2 and the semiconductor device. Further, the distance sensor is not limited to one location, and may be arranged at a plurality of locations on the probe substrate 7 to detect and correct the inclination of the probe substrate 7 with respect to the semiconductor device.

  In this embodiment, the probe device in which the locking portion 17 is attached to the probe substrate 7 and the probe device in which the locking portion 17 is attached to each of the contact probes 8a and 8b are described as examples. However, as the locking portion, both a locking portion attached to the probe substrate and a locking portion attached to the contact probe may be provided. In addition, it is not necessary to provide the locking portions for all the contact probes, and the locking portions may be arranged by thinning out as long as the function is not impaired.

  In the probe device described above, the range of probe marks formed on the surface of the electrode pad by the contact probe can be regulated, and an electrode pad of an optimal size corresponding to the electrical characteristics is arranged as the electrode pad of the semiconductor device. Thus, the contact probe can be brought into good contact with the electrode pad. By optimizing the size of the electrode pad, it is possible to reduce the size of the semiconductor device and contribute to downsizing and cost reduction of the semiconductor device. Conversely, the contact probe can be appropriately brought into contact with the electrode pad optimized in accordance with the characteristics of the semiconductor device.

  The embodiment disclosed this time is an example, and the present invention is not limited to this. The present invention is defined by the terms of the claims, rather than the scope described above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is effectively used for evaluation of electrical characteristics of a semiconductor device in the manufacture of the semiconductor device.

  DESCRIPTION OF SYMBOLS 1 Semiconductor test apparatus, 2 Probe apparatus, 3 Moving arm part, 4 Chuck stage, 5 Semiconductor apparatus, 6 Signal line, 7 Probe board, 8a, 8b, 8c, 8d Contact probe, 9 Insulating base | substrate, 10a, 10b Electrode pad 11a, 11b, 11c Contact part, 12 Tip part, 13 Deflection part, 14 Installation part, 15 Connection part, 16 Push-in part, 17 Locking part, 18 Recessed part, 19 Distance sensor, 21a, 21b Probe mark, DL, DS , D Distance, LA, LB, PLA, PLB length.

Claims (17)

A probe substrate to be arranged so as to face the object to be measured with a space therebetween;
A plurality of contact probes arranged on the probe substrate, extending in a direction in which the object to be measured is located, and having contact portions that contact the object to be measured;
Among the plurality of contact probes, the contact area of the contact portion of one contact probe is different from the contact area of the contact portion of another contact probe,
The probe device, wherein a distance between the contact portion of the one contact probe and the probe substrate is different from a distance between the contact portion of the other contact probe and the probe substrate. Each of the one contact probe and the other contact probe is arranged to intersect the probe substrate,
The probe apparatus according to claim 1, wherein an angle formed by the one contact probe and the probe substrate is different from an angle formed by the other contact probe and the probe substrate.   The direction in which the other contact probe extends intersects with the direction in which the one contact probe extends in a plan view from the surface of the probe substrate. Probe device.   The probe device according to claim 1, wherein the one contact probe and the other contact probe include a cantilever-type contact probe.   The probe device according to claim 1, wherein the one contact probe and the other contact probe include a spring-type contact probe.   6. The probe device according to claim 1, wherein the length of the one contact probe is different from the length of the other contact probe or is set to the same length. 7.   The probe device according to claim 1, wherein the thickness of the one contact probe and the thickness of the other contact probe are different from each other or set to the same thickness.   The probe device according to any one of claims 1 to 5, wherein the hardness of the one contact probe and the hardness of the other contact probe are set to different or the same hardness.   The probe device according to any one of claims 1 to 5, wherein the material of the one contact probe and the material of the other contact probe are different materials or are formed of the same material.   The probe device according to any one of claims 1 to 9, further comprising a locking portion that is provided on any one of the plurality of contact probes and the probe substrate and locks the other.   The probe device according to claim 10, wherein the locking portion includes a height position adjusting portion. The locking portion is provided on the contact probe,
The probe device according to claim 10 or 11, wherein the probe substrate is formed with a recess into which the locking portion is fitted. In the probe substrate, a through-hole penetrating in a direction intersecting with a direction in which the contact probe extends is formed,
The probe device according to claim 10 or 11, wherein the locking portion is installed so as to be inserted into the through hole and extend toward the contact probe.   The probe device according to claim 10, wherein the locking portion is formed of an elastic member. A first locking portion that is provided on one of the plurality of contact probes and one of the probe substrates and locks the other;
The probe device according to claim 1, further comprising a second locking portion that is provided on the other side and locks the one side.   10. The device according to claim 1, further comprising a locking portion that is provided on any one of the plurality of contact probes and the probe substrate and locks the other. 11. Probe device.   The probe device according to claim 1, wherein a distance sensor that measures a distance between the probe substrate and the object to be measured is disposed on the probe substrate.

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