JP2015008032A5 - - Google Patents

Download PDF

Info

Publication number
JP2015008032A5
JP2015008032A5 JP2014129133A JP2014129133A JP2015008032A5 JP 2015008032 A5 JP2015008032 A5 JP 2015008032A5 JP 2014129133 A JP2014129133 A JP 2014129133A JP 2014129133 A JP2014129133 A JP 2014129133A JP 2015008032 A5 JP2015008032 A5 JP 2015008032A5
Authority
JP
Japan
Prior art keywords
carbide
oxide
sulfide
nitride
peg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014129133A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015008032A (ja
JP6038843B2 (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2015008032A publication Critical patent/JP2015008032A/ja
Publication of JP2015008032A5 publication Critical patent/JP2015008032A5/ja
Application granted granted Critical
Publication of JP6038843B2 publication Critical patent/JP6038843B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014129133A 2013-06-24 2014-06-24 少なくとも1つの相互混合層を含む装置 Expired - Fee Related JP6038843B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361838407P 2013-06-24 2013-06-24
US61/838,407 2013-06-24

Publications (3)

Publication Number Publication Date
JP2015008032A JP2015008032A (ja) 2015-01-15
JP2015008032A5 true JP2015008032A5 (https=) 2015-04-23
JP6038843B2 JP6038843B2 (ja) 2016-12-07

Family

ID=52110831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014129133A Expired - Fee Related JP6038843B2 (ja) 2013-06-24 2014-06-24 少なくとも1つの相互混合層を含む装置

Country Status (3)

Country Link
US (3) US8976634B2 (https=)
JP (1) JP6038843B2 (https=)
KR (1) KR101672245B1 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
CN104769672B (zh) 2012-04-25 2019-05-14 希捷科技有限公司 包括近场换能器和粘合层的器件
US9245573B2 (en) 2013-06-24 2016-01-26 Seagate Technology Llc Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
US8976634B2 (en) * 2013-06-24 2015-03-10 Seagate Technology Llc Devices including at least one intermixing layer
US9058824B2 (en) 2013-06-24 2015-06-16 Seagate Technology Llc Devices including a gas barrier layer
US8971161B2 (en) 2013-06-24 2015-03-03 Seagate Technology Llc Devices including at least one adhesion layer and methods of forming adhesion layers
US9281002B2 (en) 2013-06-24 2016-03-08 Seagate Technology Llc Materials for near field transducers and near field transducers containing same
US9153277B2 (en) * 2013-11-08 2015-10-06 Seagate Technology Llc Near field transducer having sacrificial structure
US9548076B2 (en) * 2013-11-08 2017-01-17 Seagate Technology Llc Magnetic devices with overcoats
US9691423B2 (en) * 2013-11-08 2017-06-27 Seagate Technology Llc Devices including at least one adhesion layer and methods of forming adhesion layers
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9666220B2 (en) 2014-05-25 2017-05-30 Seagate Technology Llc Devices including a near field transducer and at least one associated adhesion layer
US9620150B2 (en) 2014-11-11 2017-04-11 Seagate Technology Llc Devices including an amorphous gas barrier layer
US9552833B2 (en) 2014-11-11 2017-01-24 Seagate Technology Llc Devices including a multilayer gas barrier layer
US9822444B2 (en) * 2014-11-11 2017-11-21 Seagate Technology Llc Near-field transducer having secondary atom higher concentration at bottom of the peg
WO2016077197A1 (en) * 2014-11-12 2016-05-19 Seagate Technology Llc Devices including a near field transducer (nft) with nanoparticles
US9202481B1 (en) * 2015-03-04 2015-12-01 HGST Netherlands B.V. Near-field transducer with compositionally graded material for heat assisted magnetic recording
US9792931B2 (en) * 2015-03-22 2017-10-17 Seagate Technology Llc Devices including a difussion barrier layer
US10102872B2 (en) 2015-03-24 2018-10-16 Seagate Technology Llc Devices including at least one multilayer adhesion layer
WO2016191414A1 (en) * 2015-05-27 2016-12-01 Seagate Technology Llc Thermally robust near-field transducer peg
US9620152B2 (en) 2015-05-28 2017-04-11 Seagate Technology Llc Near field transducers (NFTS) and methods of making
US9824709B2 (en) 2015-05-28 2017-11-21 Seagate Technology Llc Near field transducers (NFTS) including barrier layer and methods of forming
US9928859B2 (en) 2015-05-28 2018-03-27 Seagate Technology Llc Near field transducers (NFTS) and methods of making
US9741381B1 (en) 2015-05-28 2017-08-22 Seagate Technology Llc Near field transducers (NFTs) including a protective layer and methods of forming
WO2016191707A1 (en) 2015-05-28 2016-12-01 Seagate Technology Llc Multipiece near field transducers (nfts)
CN107924688B (zh) 2015-05-28 2021-05-11 希捷科技有限公司 包含由不同材料制成的销钉和盘的近场换能器(nft)的设备
US9633677B2 (en) * 2015-06-16 2017-04-25 Western Digital Technologies, Inc. Near field transducer having an adhesion layer coupled thereto
US9852748B1 (en) 2015-12-08 2017-12-26 Seagate Technology Llc Devices including a NFT having at least one amorphous alloy layer
US9972346B2 (en) 2016-02-27 2018-05-15 Seagate Technology Llc NFT with mechanically robust materials
US10115423B1 (en) * 2016-10-05 2018-10-30 Seagate Technology Llc Near-field transducer utilizing angled reflectors
US10490221B1 (en) 2018-12-07 2019-11-26 Seagate Technology Llc Near-field transducer of heat-assisted recording head having bottom and middle disks with different recessions from media-facing surface
US11189312B1 (en) 2019-03-18 2021-11-30 Seagate Technology Llc Adhesive layer for bonding noble metal structure with a dielectric layer
KR102852909B1 (ko) * 2019-08-07 2025-09-03 삼성디스플레이 주식회사 도전 패턴, 도전 패턴을 포함하는 표시 장치, 및 도전 패턴의 제조 방법
US11107496B2 (en) * 2019-12-31 2021-08-31 Seagate Technology Llc Near field transducers including platinum group alloys
US11875826B1 (en) 2021-12-20 2024-01-16 Seagate Technology Llc Heat-assisted magnetic recording head with a bilayer adhesion structure

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR8006681A (pt) 1979-02-12 1980-12-30 Exxon Research Engineering Co Processo de carbonilacao e novos catalisadores de metal de transicao
US4492873A (en) 1980-04-25 1985-01-08 Dmitriev Stanislav P Apparatus for electron beam irradiation of objects
US4898774A (en) 1986-04-03 1990-02-06 Komag, Inc. Corrosion and wear resistant magnetic disk
US5482611A (en) 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
DE4200235C1 (https=) 1992-01-08 1993-05-06 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5326429A (en) 1992-07-21 1994-07-05 Seagate Technology, Inc. Process for making studless thin film magnetic head
US5624868A (en) 1994-04-15 1997-04-29 Micron Technology, Inc. Techniques for improving adhesion of silicon dioxide to titanium
JP3407548B2 (ja) 1996-03-29 2003-05-19 株式会社日立製作所 イオン打込み装置及びこれを用いた半導体製造方法
WO1997045834A1 (en) 1996-05-31 1997-12-04 Akashic Memories Corporation Recording media having protective overcoats of highly tetrahedral amorphous carbon and methods for their production
US6312766B1 (en) 1998-03-12 2001-11-06 Agere Systems Guardian Corp. Article comprising fluorinated diamond-like carbon and method for fabricating article
US6130436A (en) 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
EP1069809A1 (en) 1999-07-13 2001-01-17 Ion Beam Applications S.A. Isochronous cyclotron and method of extraction of charged particles from such cyclotron
US6632483B1 (en) 2000-06-30 2003-10-14 International Business Machines Corporation Ion gun deposition and alignment for liquid-crystal applications
US6589676B1 (en) 2000-07-25 2003-07-08 Seagate Technology Llc Corrosion resistant magnetic thin film media
US6641932B1 (en) 2000-09-05 2003-11-04 Seagate Technology, Llc Magnetic thin film media with chromium capping layer
US6902773B1 (en) 2000-11-21 2005-06-07 Hitachi Global Storage Technologies Netherlands, B.V. Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
US7064491B2 (en) 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
JP4184668B2 (ja) 2002-01-10 2008-11-19 富士通株式会社 Cpp構造磁気抵抗効果素子
JP2006500741A (ja) 2002-09-23 2006-01-05 エピオン コーポレーション ガスクラスタイオンビーム処理システム及び方法
JP4560712B2 (ja) 2003-07-18 2010-10-13 イーエムエス ナノファブリカツィオン アーゲー 超高および超低運動イオン・エネルギーによるターゲットのイオン照射
US7476855B2 (en) 2006-09-19 2009-01-13 Axcelis Technologies, Inc. Beam tuning with automatic magnet pole rotation for ion implanters
EP2106678B1 (en) 2006-12-28 2010-05-19 Fondazione per Adroterapia Oncologica - Tera Ion acceleration system for medical and/or other applications
US7544958B2 (en) 2007-03-23 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Contamination reduction during ion implantation
US8248891B2 (en) 2008-11-18 2012-08-21 Seagate Technology Llc Near-field transducers for focusing light
US7965464B2 (en) 2008-11-20 2011-06-21 Seagate Technology Llc Heat-assisted magnetic recording with shaped magnetic and thermal fields
US20100190036A1 (en) 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
WO2010095333A1 (ja) * 2009-02-17 2010-08-26 コニカミノルタオプト株式会社 近接場光発生器、光記録ヘッド及び光記録装置
US8451555B2 (en) * 2009-02-24 2013-05-28 Seagate Technology Llc Recording head for heat assisted magnetic recording
US8411393B2 (en) * 2009-06-17 2013-04-02 Seagate Technology Llc Electrical lap guides and methods of using the same
US8040761B2 (en) 2009-06-24 2011-10-18 Tdk Corporation Near-field light generating device including near-field light generating element disposed over waveguide with buffer layer and adhesion layer therebetween
DE102009032275A1 (de) 2009-07-08 2011-01-13 Siemens Aktiengesellschaft Beschleunigeranlage und Verfahren zur Einstellung einer Partikelenergie
US7998607B2 (en) 2009-07-31 2011-08-16 Hitachi Global Storage Technologies Netherlands, B.V. Partially-oxidized cap layer for hard disk drive magnetic media
US8031561B2 (en) 2009-10-28 2011-10-04 Hitachi Global Storage Technologies Netherlands B.V. Joint design of thermally-assisted magnetic recording head and patterned media for high optical efficiency
US8934198B2 (en) 2010-02-23 2015-01-13 Seagate Technology Llc Recording head including NFT and heatsink
US8149657B2 (en) * 2010-02-23 2012-04-03 Seagate Technology Llc Optical waveguide clad material
US8339740B2 (en) * 2010-02-23 2012-12-25 Seagate Technology Llc Recording head for heat assisted magnetic recording with diffusion barrier surrounding a near field transducer
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US8385159B2 (en) * 2010-05-21 2013-02-26 Seagate Technology Llc Near field transducer with shaped energy radiating end
US8391108B2 (en) * 2010-08-12 2013-03-05 Seagate Technology Llc Hybrid near-field transducer for heat assisted magnetic recording
US8351151B2 (en) 2010-11-02 2013-01-08 Hitachi Global Storage Technologies Netherlands B.V. Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip
JP5689009B2 (ja) * 2011-03-31 2015-03-25 セイコーインスツル株式会社 プラズモン変換素子の製造方法
US20130164454A1 (en) 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
US8514673B1 (en) * 2012-04-24 2013-08-20 Seagate Technology Llc Layered near-field transducer
WO2013163195A1 (en) 2012-04-24 2013-10-31 Seagate Technology Llc Near field transducer with core and plasmonic outer layer
CN104769672B (zh) 2012-04-25 2019-05-14 希捷科技有限公司 包括近场换能器和粘合层的器件
US9190100B2 (en) 2012-04-25 2015-11-17 Seagate Technology Determining at least one of alignment and bond line thickness between an optical component and a mounting surface
US8945731B2 (en) 2012-06-29 2015-02-03 Seagate Technology Llc Interlayer for device including NFT and cladding layers
JP6239632B2 (ja) 2012-10-18 2017-11-29 シーゲイト テクノロジー エルエルシーSeagate Technology LLC 中間層を含む物品および形成する方法
US8891205B2 (en) * 2013-04-16 2014-11-18 Seagate Technology Llc Apparatuses and methods for controlling near-field transducer to write pole spacing
US8830800B1 (en) * 2013-06-21 2014-09-09 Seagate Technology Llc Magnetic devices including film structures
US8971161B2 (en) * 2013-06-24 2015-03-03 Seagate Technology Llc Devices including at least one adhesion layer and methods of forming adhesion layers
US9281002B2 (en) * 2013-06-24 2016-03-08 Seagate Technology Llc Materials for near field transducers and near field transducers containing same
US8976634B2 (en) * 2013-06-24 2015-03-10 Seagate Technology Llc Devices including at least one intermixing layer
US8913468B1 (en) * 2013-07-25 2014-12-16 Seagate Technology Llc Resonator enhanced near field transducer
US9263074B2 (en) * 2013-11-08 2016-02-16 Seagate Technology Llc Devices including at least one adhesion layer
US9305572B2 (en) * 2014-05-01 2016-04-05 Seagate Technology Llc Methods of forming portions of near field transducers (NFTS) and articles formed thereby

Similar Documents

Publication Publication Date Title
JP2015008032A5 (https=)
US11165011B2 (en) Piezoelectric element and method for manufacturing piezoelectric element
CN104364924B (zh) 压电器件
US9231496B2 (en) Capacitive micro-machined transducer and method of manufacturing the same
EP2806983B1 (en) Capacitive micro-machined transducer and method of manufacturing the same
JP2020517111A5 (https=)
JP6160708B2 (ja) 炭化珪素半導体装置
TW201409703A (zh) 電子裝置、積層構造體及其製造方法
TW201005880A (en) Method of fabricating RRAM
JP2016509690A5 (https=)
JP7215426B2 (ja) 圧電薄膜素子
JP2016177861A5 (https=)
EP2922707B1 (en) Capacitive micro-machined transducer and method of manufacturing the same
TWI683461B (zh) 壓電薄膜元件
JP2017501351A5 (https=)
JP2015130223A5 (ja) 磁気スタック
JP6065022B2 (ja) 誘電体デバイスの製造方法
JP2017130701A (ja) 圧電体素子の製造方法
CN105008307A (zh) 无铅压电材料
US20190218145A1 (en) Oxide sintered body and sputtering target
JP5935703B2 (ja) 半導体装置の製造方法
JP2015119174A5 (ja) 半導体装置
JP2005191555A5 (https=)
CN106654008B (zh) 一种柔性耐高温BaTi1-xCoxO3阻变存储器
JP2007242788A (ja) 圧電薄膜素子