JP2014534336A5 - - Google Patents

Download PDF

Info

Publication number
JP2014534336A5
JP2014534336A5 JP2014533979A JP2014533979A JP2014534336A5 JP 2014534336 A5 JP2014534336 A5 JP 2014534336A5 JP 2014533979 A JP2014533979 A JP 2014533979A JP 2014533979 A JP2014533979 A JP 2014533979A JP 2014534336 A5 JP2014534336 A5 JP 2014534336A5
Authority
JP
Japan
Prior art keywords
layer
ald
oxide layer
inorganic oxide
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014533979A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014534336A (ja
JP6096783B2 (ja
Filing date
Publication date
Priority claimed from GBGB1117242.6A external-priority patent/GB201117242D0/en
Application filed filed Critical
Publication of JP2014534336A publication Critical patent/JP2014534336A/ja
Publication of JP2014534336A5 publication Critical patent/JP2014534336A5/ja
Application granted granted Critical
Publication of JP6096783B2 publication Critical patent/JP6096783B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014533979A 2011-10-06 2012-09-26 大気圧プラズマ法によるコーティング作製方法 Expired - Fee Related JP6096783B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1117242.6A GB201117242D0 (en) 2011-10-06 2011-10-06 Method and device for manufacturing a barrier layer on a flexible subtrate
GB1117242.6 2011-10-06
PCT/GB2012/052378 WO2013050741A1 (en) 2011-10-06 2012-09-26 A method for producing a coating by atmospheric pressure plasma technology

Publications (3)

Publication Number Publication Date
JP2014534336A JP2014534336A (ja) 2014-12-18
JP2014534336A5 true JP2014534336A5 (cg-RX-API-DMAC7.html) 2015-11-12
JP6096783B2 JP6096783B2 (ja) 2017-03-15

Family

ID=45035243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014533979A Expired - Fee Related JP6096783B2 (ja) 2011-10-06 2012-09-26 大気圧プラズマ法によるコーティング作製方法

Country Status (5)

Country Link
US (1) US20140242365A1 (cg-RX-API-DMAC7.html)
EP (1) EP2764133B1 (cg-RX-API-DMAC7.html)
JP (1) JP6096783B2 (cg-RX-API-DMAC7.html)
GB (1) GB201117242D0 (cg-RX-API-DMAC7.html)
WO (1) WO2013050741A1 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI641178B (zh) * 2012-09-06 2018-11-11 吳羽股份有限公司 Carbonaceous material for negative electrode of secondary battery of nonaqueous electrolyte and manufacturing method thereof
US10276352B2 (en) * 2012-12-21 2019-04-30 AGC Inc. Pair of electrodes for DBD plasma process
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
JP2015166170A (ja) * 2014-03-04 2015-09-24 東洋製罐グループホールディングス株式会社 ガスバリア性積層体
KR20160128409A (ko) * 2014-03-04 2016-11-07 도요세이칸 그룹 홀딩스 가부시키가이샤 가스 배리어성 적층체
JP2015178231A (ja) * 2014-03-19 2015-10-08 東洋製罐グループホールディングス株式会社 ガスバリア性積層構造体
KR20170038821A (ko) * 2014-07-29 2017-04-07 도판 인사츠 가부시키가이샤 적층체 및 그 제조 방법, 그리고 가스 배리어 필름 및 그 제조 방법
DE102015115329A1 (de) * 2015-09-11 2017-03-16 Hanwha Q Cells Gmbh Verfahren zur plasmaunterstützten Abscheidung von Aluminiumoxiddünnschichten auf Halbleiterwafern für die Herstellung von Wafersolarzellen und Inline-PECVD-Anlage
CN107254675B (zh) * 2017-06-07 2019-07-09 华中科技大学 一种纳米颗粒空间原子层沉积连续包覆装置及方法
CN113302334A (zh) * 2019-01-25 2021-08-24 应用材料公司 形成湿气和氧气阻挡涂层的方法
EP4095283A1 (en) * 2021-05-25 2022-11-30 Molecular Plasma Group SA Method and system for coating filter media

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8427943D0 (en) * 1984-11-05 1984-12-12 Alcan Int Ltd Anodic aluminium oxide film
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US7098131B2 (en) 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7045010B2 (en) * 2001-09-06 2006-05-16 Alcatel Applicator for high-speed gel buffering of flextube optical fiber bundles
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
EP2249413A3 (en) * 2002-04-01 2011-02-02 Konica Corporation Support and organic electroluminescence element comprising the support
US6774569B2 (en) 2002-07-11 2004-08-10 Fuji Photo Film B.V. Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
US7288204B2 (en) 2002-07-19 2007-10-30 Fuji Photo Film B.V. Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG)
EP1403902A1 (en) 2002-09-30 2004-03-31 Fuji Photo Film B.V. Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG)
EP1626613B8 (en) 2004-08-13 2007-03-07 Fuji Film Manufacturing Europe B.V. Method and arrangement for controlling a glow discharge plasma under atmospheric conditions
EP2032738A1 (en) * 2006-06-16 2009-03-11 Fuji Film Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
WO2008122293A1 (en) * 2007-04-04 2008-10-16 Tetra Laval Holdings & Finance S.A. Packaging laminate, method for manufacturing of the packaging laminate and packaging container produced there from
US20080303744A1 (en) * 2007-06-11 2008-12-11 Tokyo Electron Limited Plasma processing system, antenna, and use of plasma processing system
JP2010535291A (ja) * 2007-07-30 2010-11-18 ダウ グローバル テクノロジーズ インコーポレイティド 大気圧プラズマ化学蒸着方法
US20100255625A1 (en) 2007-09-07 2010-10-07 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
BRPI0816544A2 (pt) * 2007-10-15 2019-09-24 Dow Global Technologies Inc processo para melhorar o desempenho de barreira de um objeto revestido por plasma compreendendo uma poliolefina, artigo de manufatura e método para melhorar a resistência a manchas de um objeto comprendendo uma resina poliolefínica
TWI438953B (zh) * 2008-01-30 2014-05-21 歐斯朗奧托半導體股份有限公司 電子組件之製造方法及電子組件
EP2245647B1 (en) * 2008-02-21 2012-08-01 Fujifilm Manufacturing Europe B.V. Method for treatment of a substrate with atmospheric pressure glow discharge electrode configuration
US20090311496A1 (en) * 2008-06-17 2009-12-17 Ford Global Technologies, Llc Intermediate Coating Compositions and Methods of Using the Same
WO2010065564A1 (en) * 2008-12-02 2010-06-10 Georgia Tech Research Corporation Environmental barrier coating for organic semiconductor devices and methods thereof
KR101040175B1 (ko) * 2008-12-11 2011-06-16 한국전자통신연구원 연성 기판 및 그의 제조 방법
EP2226832A1 (en) 2009-03-06 2010-09-08 FUJIFILM Manufacturing Europe B.V. Substrate plasma treatment using side tabs
JP5912228B2 (ja) * 2010-05-17 2016-04-27 凸版印刷株式会社 ガスバリア性積層体の製造方法

Similar Documents

Publication Publication Date Title
JP2014534336A5 (cg-RX-API-DMAC7.html)
JP2012004549A5 (ja) 半導体装置
JP2013038404A5 (cg-RX-API-DMAC7.html)
JP2013080891A5 (cg-RX-API-DMAC7.html)
JP2012089854A5 (cg-RX-API-DMAC7.html)
JP2012531045A5 (cg-RX-API-DMAC7.html)
JP2011192693A5 (ja) 多層反射膜付基板の製造方法および反射型マスクブランクの製造方法
JP2011205089A5 (ja) 半導体膜の作製方法
WO2013134592A3 (en) Atomic layer deposition strengthening members and method of manufacture
JP2010186988A5 (ja) 結晶性半導体膜の作製方法
JP2015061952A5 (cg-RX-API-DMAC7.html)
JP2009533844A5 (cg-RX-API-DMAC7.html)
JP2014198460A5 (cg-RX-API-DMAC7.html)
JP2011238912A5 (ja) 半導体装置の作製方法
JP2009135465A5 (cg-RX-API-DMAC7.html)
JP2009508700A5 (cg-RX-API-DMAC7.html)
JP2012028755A5 (ja) 分離方法および半導体素子の作製方法
JP2019512870A5 (cg-RX-API-DMAC7.html)
JP2013188968A5 (cg-RX-API-DMAC7.html)
JP2009111350A5 (cg-RX-API-DMAC7.html)
JP2009065181A5 (cg-RX-API-DMAC7.html)
JP2011238900A5 (cg-RX-API-DMAC7.html)
JP2012517530A5 (cg-RX-API-DMAC7.html)
JP2011228680A5 (ja) Soi基板の作製方法、および半導体基板の作製方法
WO2014080310A3 (en) Capacitive micro-machined transducer and method of manufacturing the same