JP2014529923A5 - - Google Patents

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JP2014529923A5
JP2014529923A5 JP2014523426A JP2014523426A JP2014529923A5 JP 2014529923 A5 JP2014529923 A5 JP 2014529923A5 JP 2014523426 A JP2014523426 A JP 2014523426A JP 2014523426 A JP2014523426 A JP 2014523426A JP 2014529923 A5 JP2014529923 A5 JP 2014529923A5
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Japan
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latch
detector
trigger signal
avalanche diode
single photon
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JP2014523426A
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JP6059722B2 (ja
JP2014529923A (ja
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Priority claimed from PCT/IB2012/053837 external-priority patent/WO2013018006A1/en
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JP2014523426A 2011-08-03 2012-07-27 デジタルシリコン光電子増倍管アレイに関する位置敏感な読み出しモード Active JP6059722B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161514504P 2011-08-03 2011-08-03
US61/514,504 2011-08-03
PCT/IB2012/053837 WO2013018006A1 (en) 2011-08-03 2012-07-27 Position-sensitive readout modes for digital silicon photomultiplier arrays

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JP2014529923A JP2014529923A (ja) 2014-11-13
JP2014529923A5 true JP2014529923A5 (enExample) 2015-08-20
JP6059722B2 JP6059722B2 (ja) 2017-01-11

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JP2014523426A Active JP6059722B2 (ja) 2011-08-03 2012-07-27 デジタルシリコン光電子増倍管アレイに関する位置敏感な読み出しモード

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US (1) US9176241B2 (enExample)
EP (1) EP2740262B1 (enExample)
JP (1) JP6059722B2 (enExample)
CN (1) CN103733609B (enExample)
MX (1) MX2014001272A (enExample)
RU (1) RU2014107914A (enExample)
WO (1) WO2013018006A1 (enExample)

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