JP2014524157A - グラフェン含有スイッチの形成方法 - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 148
- 238000000034 method Methods 0.000 title claims abstract description 72
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 51
- 239000003989 dielectric material Substances 0.000 claims abstract description 69
- 230000005684 electric field Effects 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims description 58
- 125000006850 spacer group Chemical group 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
【選択図】図1
Description
Claims (20)
- スイッチを形成する方法であって、
ベース上に下部電極を形成するステップと、
前記下部電極の直接上に第一の導電性構造を形成するステップと、
前記第一の導電性構造の側壁に沿って誘電性材料を形成するステップであって、前記第一の導電性構造および前記誘電性材料は、ともに前記下部電極の第一部分を被覆し、前記下部電極の露出された第二部分をそのまま残す、ステップと、
前記下部電極の前記露出部分に電気的に結合され、前記誘電性材料に沿って、前記誘電性材料によって前記第一の導電性構造から横方向に間隔を開けられたグラフェン構造を形成するステップと、
前記グラフェン構造の前記第一の導電性構造とは反対側に第二の導電性構造を形成するステップであって、前記第二の誘電性構造は前記下部電極の直接上にある、ステップと、
前記グラフェン構造上に上部電極を形成するステップであって、前記下部電極は、前記第一および第二の導電性構造のうちの一つに電気的に結合され、前記上部電極は、前記第一および第二の導電性構造のうちの他方と電気的に結合される、ステップと、
を含み、
前記第一および第二の導電性構造は、前記グラフェン構造にわたって電界を提供するように構成される、
ことを特徴とする方法。 - 前記スイッチは、前記下部電極上の開口内に形成され、前記スイッチは、前記下部電極上の前記開口内に形成された唯一のスイッチである、
ことを特徴とする請求項1に記載の方法。 - 前記スイッチは、一対の下部電極上の共通の開口内に形成される一対のスイッチのうちの一つである、
ことを特徴とする請求項1に記載の方法。 - 前記スイッチは、複数の下部電極上の共通の開口内に形成される複数のスイッチのうちの一つである、
ことを特徴とする請求項1に記載の方法。 - 前記グラフェン構造を形成する前記ステップは、
前記誘電性材料に沿ってシード材料を形成するステップと、
前記シード材料に沿ってグラフェンをエピタキシャル成長させるステップと、
を含む、
ことを特徴とする請求項1に記載の方法。 - スイッチを形成する方法であって、
下部電極上にお互いに横方向に間隔を開けられて第一および第二の導電性構造を形成するステップであって、前記第一の導電性構造は前記下部電極と直接接触し、前記第二の導電性構造は、前記下部電極と直接接触しないステップと、
前記第一および第二の導電性構造の側壁に沿って誘電性ライナーを形成するステップであって、前記下部電極のうちの一部は、前記誘電性ライナーの形成後に露出されるステップと、
前記誘電性ライナーに沿ってグラフェン構造を形成するステップであって、前記グラフェン構造は前記下部電極と電気的に結合される、ステップと、
前記グラフェン構造と、前記第一および第二の導電性構造の上に上部電極を形成するステップであって、前記上部電極は、前記グラフェン構造と電気的に結合され、前記第二の導電性構造と直接接触し、前記第一の導電性構造とは直接接触しない、ステップと、
を含み、
前記第一および第二の導電性構造は、前記グラフェン構造にわたって電界を提供するように構成される、
ことを特徴とする方法。 - 前記第一および第二の導電性構造は同時に形成される、
ことを特徴とする請求項6に記載の方法。 - 前記第一および第二の導電性構造はお互いに連続して形成される、
ことを特徴とする請求項6に記載の方法。 - 開口は前記グラフェン構造を形成するステップの後に前記下部電極上に残り、前記開口は、前記グラフェン構造の前記誘電性ライナーとは反対側にあり、前記方法は、前記上部電極を形成するステップの前に誘電性材料で前記開口を充填するステップをさらに含む、
ことを特徴とする請求項6に記載の方法。 - 前記誘電性ライナーは第二の誘電性材料を含み、
前記下部電極上に第一の誘電性材料を形成するステップと、
前記下部電極へと前記第一の誘電性材料を通って伸長する開口を形成するステップであって、前記開口は断面に沿って一対の側壁を有する、ステップと、
前記複数の側壁のうちの一つの下部領域に沿って誘電性スペーサを形成するステップと、
前記開口の前記複数の側壁に沿って複数の導電性ライナーを形成するステップであって、前記複数のライナーのうちの一つは、前記第一の導電性構造であり、前記複数のライナーのうちの他方は、前記第二の導電性構造であり、前記第二の導電性構造は、前記誘電性スペーサによって前記下部電極から間隔を開けられる、ステップと、
をさらに含む、
ことを特徴とする請求項6に記載の方法。 - 前記複数の導電性ライナーを形成する前記ステップは、
前記開口の前記複数の側壁に沿って、かつ前記開口の下部にわたる導電性材料の配置と、
前記導電性材料の異方性エッチングと、
を含む、
ことを特徴とする請求項10に記載の方法。 - 前記誘電性スペーサは、第一の誘電性スペーサであり、前記上部電極を形成するステップの前に、第二の誘電性スペーサで前記複数の導電性ライナーのうちの前記一つの上部を置換するステップをさらに含む、
ことを特徴とする請求項10に記載の方法。 - 複数のスイッチを形成する方法であって、
ベース上に一対の間隔の開けられた下部電極を形成するステップと、
前記複数の下部電極上に第一の誘電性材料を形成するステップと、
前記複数の下部電極へと前記第一の誘電性材料を通って伸長する開口を形成するステップと、
前記開口の複数の側壁に沿って一対の上方に伸長する導電性構造を形成するステップであって、前記複数の上方に伸長する導電性構造のうちの一つは前記複数の下部電極のうちの一つに直接相対し、前記複数の上方に伸長する導電性構造のうちの他方は、前記複数の下部電極のうちの他方に直接相対する、ステップと、
前記複数の上方に伸長する導電性構造の複数の側壁に沿って第二の誘電性材料を形成するステップであって、前記複数の下部電極の一部は、前記第二の誘電性材料の形成後に露出される、ステップと、
前記複数の下部電極の前記露出された部分から上方に伸長する一対のグラフェン構造を形成するステップであって、前記複数のグラフェン構造のうちの第一は、前記複数の下部電極のうちの一つと電気的に結合されかつ、直接その上にあり、前記複数のグラフェン構造のうちの第二は、前記複数の下部電極のうちの他方と電気的に結合され、かつ直接その上にある、ステップと、
前記複数のグラフェン構造の複数の側壁に沿って第三の誘電性材料を形成するステップと、
前記第三の誘電性材料に沿って一対の下方に伸長する導電性構造を形成するステップと、
前記複数の下方に伸長する導電性構造の間に第四の誘電性材料を形成するステップと、
前記複数のグラフェン構造および前記複数の下方に伸長する導電性構造の上に一対の上部電極を形成するステップであって、前記複数の上部電極のうちの一つは、前記第一のグラフェン構造および前記複数の下方に伸長する導電性構造のうちの一つと電気的に結合され、前記複数の上部電極のうちの他方は、前記第二のグラフェン構造および前記複数の下方に伸長する導電性構造のうちの他方と電気的に結合される、ステップと、
を含む、
ことを特徴とする方法。 - 前記複数の上方に伸長する導電性構造を形成する前記ステップは、
前記開口の前記複数の側壁に沿って、かつ前記開口の下部にわたる導電性材料の配置と、
前記導電性材料の異方性エッチングと、
前記複数の上方に伸長する導電性構造の上部表面が前記開口の上部の下にあるように、前記開口の前記上部に対して前記導電性材料を陥凹させるステップと、
を含む、
ことを特徴とする請求項13に記載の方法。 - 前記第二の誘電性材料を形成する前記ステップは、
前記複数の上方に伸長する導電性構造に沿って、その上に、かつ、前記開口の下部にわたる前記第二の誘電性材料の配置と、
前記複数の上方に伸長する導電性構造の複数の側壁に沿って複数の誘電性ライナーを形成し、かつ、前記複数の上方に伸長する導電性構造上に複数の誘電性スペーサを形成するための、前記第二の誘電性材料の異方性エッチングと、
を含む、
ことを特徴とする請求項14に記載の方法。 - 前記複数の上部電極は、前記複数の誘電性スペーサの直接上に形成される、
ことを特徴とする請求項15に記載の方法。 - 前記複数のグラフェン構造を形成する前記ステップは、
前記複数の誘電性ライナーの複数の側壁と、複数の誘電性スペーサに沿うシード材料の配置と、
前記シード材料に沿ったグラフェンのエピタキシャル成長と、
を含む、
ことを特徴とする請求項15に記載の方法。 - 前記グラフェンを成長させるステップの前に、前記複数の誘電性スペーサの上部上から前記シード材料を除去するために、前記シード材料を異方性エッチングするステップをさらに含む、
ことを特徴とする請求項17に記載の方法。 - 前記グラフェンは、前記複数の誘電性スペーサの上部上に成長し、前記複数の誘電性スペーサの前記上部上から前記グラフェンを除去するために前記グラフェンを異方性エッチングするステップをさらに含む、
ことを特徴とする請求項17に記載の方法。 - 前記複数の上部電極の領域は、前記複数のグラフェン構造を形成するステップの後に露出され、前記第三の誘電性材料は、複数の露出部分を被覆し、前記複数の下方に伸長する導電性構造の下部は、前記第三の誘電性材料によって、前記複数の下部電極から間隔を開けられる、
ことを特徴とする請求項13に記載の方法。
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