JP2014519677A - 透明導電体 - Google Patents
透明導電体 Download PDFInfo
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- JP2014519677A JP2014519677A JP2014506866A JP2014506866A JP2014519677A JP 2014519677 A JP2014519677 A JP 2014519677A JP 2014506866 A JP2014506866 A JP 2014506866A JP 2014506866 A JP2014506866 A JP 2014506866A JP 2014519677 A JP2014519677 A JP 2014519677A
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- 239000004020 conductor Substances 0.000 title claims abstract description 50
- 239000010936 titanium Substances 0.000 claims abstract description 150
- 238000002834 transmittance Methods 0.000 claims abstract description 48
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 33
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 18
- 239000002019 doping agent Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 5
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 125000004429 atom Chemical group 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000010955 niobium Substances 0.000 description 134
- 239000010410 layer Substances 0.000 description 38
- 229910010413 TiO 2 Inorganic materials 0.000 description 29
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 23
- 229910052731 fluorine Inorganic materials 0.000 description 17
- 239000011737 fluorine Substances 0.000 description 17
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 17
- 238000004364 calculation method Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 229910010052 TiAlO Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 238000004549 pulsed laser deposition Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 229910052723 transition metal Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 150000003624 transition metals Chemical class 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- -1 fluorine ions Chemical class 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 3
- 238000003775 Density Functional Theory Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004599 local-density approximation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical class [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0036—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
・Ti1-a-bAlaXbOy(ただし、式中のXはNb、Ta、W、Mo、V、Cr、Fe、Zr、Co、Sn、Mn、Er、Ni、Cu、Zn及びScからなる群から選ばれるドーパント又は複数のドーパントの混合物であり、aは0.01〜0.50の範囲内であり、bは0.01〜0.15の範囲内である)の形でもって、又は、
・Ti1-aAlaFcOy-c(ただし、式中のaは0.01〜0.50の範囲内であり、cは0.01〜0.10の範囲内である)の形でもって、
含む透明導電体(又はTCO)である。
・遷移金属X、特にNb、Ta、W又はMoであって、この遷移金属XはTi1-a-bAlaXbOyの形でもってTiと置換しているか、又は、
・Ti1-aAlaFcOy-cの形でもってOと置換しているフッ素F、
のいずれかである。
Claims (20)
- アルミニウムと少なくとも1種の他のドーパントとをドープした酸化チタンを、
・Ti1-a-bAlaXbOy(ただし、式中のXはNb、Ta、W、Mo、V、Cr、Fe、Zr、Co、Sn、Mn、Er、Ni、Cu、Zn及びScからなる群から選ばれるドーパント又は複数のドーパントの混合物であり、aは0.01〜0.50の範囲内であり、bは0.01〜0.15の範囲内である)の形でもって、又は、
・Ti1-aAlaFcOy-c(ただし、式中のaは0.01〜0.50の範囲内であり、cは0.01〜0.10の範囲内である)の形でもって、
含むことを特徴とする透明導電体。 - aが0.02〜0.15の範囲内であることを特徴とする、請求項1に記載の透明導電体。
- aが0.03〜0.12の範囲内であることを特徴とする、請求項1に記載の透明導電体。
- Ti1-a-bAlaXbOy(ただし、式中のXはNbであり、aは0.02〜0.12の範囲内、好ましくは0.04〜0.08の範囲内であり、bは0.03〜0.12の範囲内、好ましくは0.05〜0.12の範囲内である)を含むことを特徴とする、請求項1に記載の透明導電体。
- Alの置換原子として、Si又はGe又はSnを更に含むことを特徴とする、請求項1に記載の透明導電体。
- 電気抵抗率が最大で10-2Ωcm、好ましくは最大で3×10-3Ωcmであることを特徴とする、請求項1に記載の透明導電体。
- 550nmでの屈折率が少なくとも2.15、好ましくは少なくとも2.3であることを特徴とする、請求項1に記載の透明導電体。
- 光透過率の平坦性指数が1±0.066の範囲内であることを特徴とする、請求項1に記載の透明導電体。
- 最大で1マイクロメートルの厚さを有するフィルムの形態であることを特徴とする、請求項1に記載の透明導電体。
- 厚さ100nmのフィルムの形態での、400nm〜700nmの波長範囲における光透過率が少なくとも70%、好ましくは少なくとも75%であることを特徴とする、請求項1に記載の透明導電体。
- フィルムの形態での請求項1〜10のいずれか1項に記載の透明導電体を含むことを特徴とする電極。
- 光起電デバイス、エレクトロクロミックデバイス、発光デバイス、特に有機発光ダイオードデバイス(OLEDデバイス)、フラットパネルディスプレイデバイス、イメージセンシングデバイスからなる群から選ばれる電子デバイスにおいて使用されることを特徴とする、請求項11に記載の電極。
- デバイス、例えば光起電デバイス、エレクトロクロミックデバイス、発光デバイス、フラットパネルディスプレイデバイス、イメージセンシングデバイス、赤外線反射グレージング、紫外線反射グレージング、帯電防止グレージングなどのデバイスであって、フィルム形態での請求項1〜10のいずれか1項に記載の透明導電体を含むことを特徴とするデバイス。
- Ti1-a-bAlaXbOy(ただし、式中のXはNb、Ta、W、Mo、V、Cr、Fe、Zr、Co、Sn、Mn、Er、Ni、Cu、Zn及びScからなる群から選ばれるドーパント又は複数のドーパントの混合物である)のフィルムを、aが0.01〜0.50の範囲内、好ましくは0.02〜0.15の範囲内、より一層好ましくは0.03〜0.12の範囲内となり、bが0.01〜0.15の範囲内となるように、表面、特に基材の表面に形成する工程を含むことを特徴とする、透明導電体の製造方法。
- Ti1-aAlaFcOy-cのフィルムを、aが0.01〜0.50の範囲内、好ましくは0.02〜0.15の範囲内、より一層好ましくは0.03〜0.12の範囲内となり、cが0.01〜0.10の範囲内となるように、表面、特に基材の表面に形成する工程を含むことを特徴とする、透明導電体の製造方法。
- XがNbであり、aが0.02〜0.12の範囲内、好ましくは0.04〜0.08の範囲内であり、bが0.03〜0.12の範囲内、好ましくは0.05〜0.12の範囲内であることを特徴とする、請求項14に記載の方法。
- 前記表面に前記フィルムを形成する際の前記表面の温度が室温であることを特徴とする、請求項14〜16のいずれか1項に記載の方法。
- 前記表面に前記フィルムを形成する際の前記表面の温度が100℃〜450℃の範囲内であることを特徴とする、請求項14〜16のいずれか1項に記載の方法。
- 前記フィルムを形成する工程に続いて、前記フィルムを還元性雰囲気中でアニールする工程を含むことを特徴とする、請求項14〜18のいずれか1項に記載の方法。
- 前記還元性雰囲気が水素H2を含んでいて、前記アニールする工程を350℃〜700℃の範囲内の温度にて行うことを特徴とする、請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1153653A FR2974657B1 (fr) | 2011-04-28 | 2011-04-28 | Conducteur electrique transparent |
FR1153653 | 2011-04-28 | ||
PCT/EP2012/057661 WO2012146661A1 (en) | 2011-04-28 | 2012-04-26 | Transparent electric conductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014519677A true JP2014519677A (ja) | 2014-08-14 |
JP6103546B2 JP6103546B2 (ja) | 2017-03-29 |
Family
ID=46017861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014506866A Expired - Fee Related JP6103546B2 (ja) | 2011-04-28 | 2012-04-26 | 透明導電体 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140060887A1 (ja) |
EP (1) | EP2702596A1 (ja) |
JP (1) | JP6103546B2 (ja) |
KR (1) | KR20140053890A (ja) |
CN (1) | CN103493144A (ja) |
FR (1) | FR2974657B1 (ja) |
WO (1) | WO2012146661A1 (ja) |
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JP5735093B1 (ja) * | 2013-12-24 | 2015-06-17 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
WO2015157513A1 (en) | 2014-04-09 | 2015-10-15 | Cornell University | Misfit p-type transparent conductive oxide (tco) films, methods and applications |
KR20160083986A (ko) * | 2015-01-02 | 2016-07-13 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
CN106384772B (zh) * | 2016-10-21 | 2019-01-15 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
CN110021376A (zh) * | 2017-12-04 | 2019-07-16 | 北京有色金属研究总院 | 一种改善钛合金力学加工性能的方法 |
CN110330813B (zh) * | 2019-05-09 | 2021-06-18 | 西华大学 | 一种彩色TiO2近红外反射颜料及其制备方法 |
CN110224021A (zh) * | 2019-05-26 | 2019-09-10 | 天津大学 | 一种肖特基二极管及其制备方法 |
CN110628241A (zh) * | 2019-09-30 | 2019-12-31 | 奈米科技(深圳)有限公司 | 近红外吸收颜料及其制备方法 |
KR102619845B1 (ko) * | 2021-12-17 | 2024-01-02 | 국방과학연구소 | 페로브스카이트 전도체를 포함하는 투명 전도성 세라믹 적층체 |
CN114822987B (zh) * | 2022-04-22 | 2023-04-14 | 厦门大学 | 一种紫外-可见-近红外透明的高导电性Ta掺杂SnO2薄膜及制备方法 |
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JPH02202068A (ja) * | 1988-12-07 | 1990-08-10 | Minnesota Mining & Mfg Co <3M> | 光透過性導電性積層体膜 |
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JP2011086613A (ja) * | 2009-09-16 | 2011-04-28 | Showa Denko Kk | 透明導電膜の製造方法、半導体発光素子の製造方法及び半導体発光素子、ランプ、透明導電性基体の製造方法及び透明導電性基体、並びに、電子機器 |
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US20070218646A1 (en) * | 2006-03-20 | 2007-09-20 | Asahi Glass Company, Limited | Process for producing electric conductor |
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JP2011236088A (ja) * | 2010-05-11 | 2011-11-24 | Hitachi Chem Co Ltd | 酸化物単結晶 |
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2012
- 2012-04-26 WO PCT/EP2012/057661 patent/WO2012146661A1/en active Application Filing
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JPH02202068A (ja) * | 1988-12-07 | 1990-08-10 | Minnesota Mining & Mfg Co <3M> | 光透過性導電性積層体膜 |
JPH0641723A (ja) * | 1992-07-27 | 1994-02-15 | Tonen Corp | 透明導電膜 |
JP2008084824A (ja) * | 2006-03-20 | 2008-04-10 | Kanagawa Acad Of Sci & Technol | 導電体の製造方法 |
US20090126791A1 (en) * | 2007-11-20 | 2009-05-21 | Guardian Industries Corp. | Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index |
JP2011086613A (ja) * | 2009-09-16 | 2011-04-28 | Showa Denko Kk | 透明導電膜の製造方法、半導体発光素子の製造方法及び半導体発光素子、ランプ、透明導電性基体の製造方法及び透明導電性基体、並びに、電子機器 |
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EP2702596A1 (en) | 2014-03-05 |
KR20140053890A (ko) | 2014-05-08 |
US20140060887A1 (en) | 2014-03-06 |
FR2974657A1 (fr) | 2012-11-02 |
CN103493144A (zh) | 2014-01-01 |
JP6103546B2 (ja) | 2017-03-29 |
WO2012146661A1 (en) | 2012-11-01 |
FR2974657B1 (fr) | 2013-04-12 |
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