JP2014506958A - 太陽光発電用成長層 - Google Patents
太陽光発電用成長層 Download PDFInfo
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- 238000010248 power generation Methods 0.000 title 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 15
- 239000011733 molybdenum Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 26
- 239000011734 sodium Substances 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 20
- 229910052708 sodium Inorganic materials 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 18
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 11
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- -1 SiCO Inorganic materials 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- 239000011787 zinc oxide Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 13
- 238000002441 X-ray diffraction Methods 0.000 description 11
- 230000006872 improvement Effects 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910016001 MoSe Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 150000003385 sodium Chemical class 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【選択図】図1
Description
以下の実施例において、モリブデン成長は、アルゴンガスにおけるモリブデンターゲットをスパッタリングすることによって行い、また堆積膜の厚さは、他に明記しない限り、500nmとした。500nmにおいて、シート抵抗は〜0.3Ω/□であり、膜はスコッチテープ検査に耐える耐久性があった。上述したように、膜の応力は堆積圧力を使用することによって制御できる。
500nm及び1000nm(それぞれ実施例1及び2における)の厚さを有する2つのMo膜を、ソーダ石灰−二酸化ケイ素ガラスの基板(以下「フロート」と称する)上に成長させた。双方の膜は同一堆積条件の下で堆積するため、膜の結晶配向は類似し、また厚さに倍の差があるため、XRD度には、予想に沿って約2倍の上昇がある。
種々のバリヤ層上にMoを成長させたものを調べた。500nmMo層を、以下の表1に掲げた各実施例上に成長させた。カッコ内の数字は直前層の厚さをnm単位で示す。サンプルには、Mo層に関するXRD分析を行い、その結果を列記した。歪みのCは圧縮応力、Tは引張応力を示す。
薄いZnO成長層を有する他のサンプルを準備した。実施例8は、SiO2バリヤ層上にZnO層を有する。実施例9は実施例8に類似するが、さらに、バリヤ層上にZnSnOx下塗層を有して、ZnO層成長を促進する。
本発明の驚くべき態様は、サンプルの結晶性及び(110)配向度ピークは、ZnO厚さに極めて大きく依存し、またZnO厚さが最適ポイントを超えて増大するとき配向度は実際的に低下する。このことは、フロート/SiO2(30)/ZnSnOX(5)/ZnO/Mo(500)構造を有する一連のサンプルを準備することによって立証し、サンプル準備にあたり、ZnO層の厚さは一連のサンプルにわたり変化させた。分析結果を図6及び図7に示す。
本発明による利点はSiO2バリヤ層を有する系には限定されないことを立証するため、フロート/SixNy(20)/ZnSnOx(5)/ZnO/Mo(500)を含む一連のサンプルを準備した。ZnO厚さによる(110)配向度ピークの変動を図8に示す。
上記のように、ガラス基板から拡散するナトリウムの拡散度を所定のものにするのが望ましい場合がある。実施例12〜14において、種々の厚さにしたZnSnOx層をガラス基板上に直接堆積し、ついでZnO層を堆積した。
Claims (36)
- 基板上におけるモリブデン層の結晶配向を制御する方法であって、
前記基板上にZnO層を堆積するステップと、
前記ZnO層上にモリブデン層を堆積するステップと
を有し、所望の前記結晶配向に応じてZnO層の厚さtを、0nm<t<50nmの値に選択する、方法。 - 請求項1記載の方法において、さらに、下塗層を堆積するステップを有し、また前記ZnO層を前記下塗層上に直接堆積する、方法。
- 請求項2記載の方法において、前記下塗層は、ZnSnOx又はTiO2を含むものとした、方法。
- 請求項3記載の方法において、前記下塗層は、0nm〜50nmの間における厚さを有するものとした、方法。
- 請求項1〜4のうちいずれか一項記載の方法において、前記基板はガラスとした方法。
- 請求項5記載の方法において、さらに、任意な他の層を堆積する前に、前記ガラス上にナトリウムバリヤ層を堆積する、方法。
- 請求項6記載の方法において、前記バリヤ層は、SixNy,SiO2,SnO2,SiCO及びTiO2 のうち少なくとも1つを有するものとした、方法。
- 請求項7記載の方法において、前記バリヤ層はSiO2 の層を有する、方法。
- 請求項8記載の方法において、前記厚さtを8nm<t<30nmの値に選択する、方法。
- 請求項9記載の方法において、前記厚さtを12nm<t<18nmの値に選択する、方法。
- 請求項7記載の方法において、前記バリヤ層はSixNy層を有する、方法。
- 請求項11記載の方法において、前記厚さtを0nm<t<30nmの値に選択する、方法。
- 請求項12記載の方法において、前記厚さtを0nm<t<15nmの値に選択する、方法。
- 請求項13記載の方法において、前記厚さtを2nm<t<8nmの値に選択する、方法。
- 請求項6記載の方法において、前記バリヤ層の厚さを5〜200nmの間における厚さとなるよう選択した、方法。
- 請求項6記載の方法において、前記バリヤ層は、化学蒸着法によって堆積する、方法。
- 請求項3記載の方法において、前記下塗層は、5〜30nmの間における厚さを有するZnSnOx層を含む、方法。
- 請求項1〜17のうちいずれか一項記載の方法において、前記ZnO層は、Alの成分を有する、方法。
- ZnO層、及び前記ZnO層上に直接堆積させたモリブデン層を支持する基板であって、前記ZnO層は0nm<t<50nmの厚さtを有する、基板。
- 請求項19記載の基板において、さらに、下塗層を備え、前記ZnO層は前記下塗層上に直接配置した、基板。
- 請求項20記載の基板において、前記下塗層は、ZnSnOx又はTiO2を含むものとした、基板。
- 請求項21記載の基板において、前記下塗層は、5nm〜50nmの間における厚さを有するものとした、基板。
- 請求項19〜22のうちいずれか一項記載の基板において、前記基板はガラスとした、基板。
- 請求項23記載の基板において、前記基板と他の層との間に配置したナトリウムバリヤ層を有する、基板。
- 請求項24記載の基板において、前記バリヤ層は、SixNy,SiO2,SnO2,SiCO及びTiO2 のうち少なくとも1つを有するものとした、基板。
- 請求項25記載の基板において、前記バリヤ層はSiO2 の層を有する、基板。
- 請求項26記載の基板において、前記厚さtは8nm<t<30nmの値とした、基板。
- 請求項27記載の基板において、前記厚さtを12nm<t<18nmの値とした、基板。
- 請求項25記載の基板において、前記バリヤ層はSixNy層を有する、基板。
- 請求項29記載の基板において、前記厚さtを0nm<t<30nmの値とした、基板。
- 請求項30記載の基板において、前記厚さtを0nm<t<15nmの値とした、基板。
- 請求項31記載の基板において、前記厚さtを2nm<t<8nmの値とした、基板。
- 請求項24記載の基板において、前記バリヤ層の厚さを5〜200nmの間における厚さとした、基板。
- 請求項20記載の基板において、前記下塗層は、5〜30nmの間における厚さを有するZnSnOx層を有する、基板。
- 請求項19〜34のうちいずれか一項記載の基板において、前記ZnO層は、Alの成分を有する、基板。
- 太陽電池に組み込んだ、請求項19〜35のうちいずれか一項記載の基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1101910.6A GB201101910D0 (en) | 2011-02-04 | 2011-02-04 | Growth layer for the photovol taic applications |
GB1101910.6 | 2011-02-04 | ||
PCT/GB2012/050243 WO2012104656A2 (en) | 2011-02-04 | 2012-02-03 | Growth layer for photovoltaic applications |
Publications (2)
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JP2014506958A true JP2014506958A (ja) | 2014-03-20 |
JP5956471B2 JP5956471B2 (ja) | 2016-07-27 |
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JP2013552273A Active JP5956471B2 (ja) | 2011-02-04 | 2012-02-03 | 太陽光発電用成長層 |
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Country | Link |
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US (1) | US9793420B2 (ja) |
EP (1) | EP2671259B1 (ja) |
JP (1) | JP5956471B2 (ja) |
GB (1) | GB201101910D0 (ja) |
WO (1) | WO2012104656A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017047366A1 (ja) * | 2015-09-18 | 2017-03-23 | 旭硝子株式会社 | 太陽電池用ガラス基板及び太陽電池 |
KR20190142296A (ko) * | 2019-12-16 | 2019-12-26 | 한국과학기술연구원 | 박막 태양전지 모듈 구조 및 이의 제조 방법 |
Citations (5)
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KR20190142296A (ko) * | 2019-12-16 | 2019-12-26 | 한국과학기술연구원 | 박막 태양전지 모듈 구조 및 이의 제조 방법 |
KR102077768B1 (ko) | 2019-12-16 | 2020-02-17 | 한국과학기술연구원 | 박막 태양전지 모듈 구조 및 이의 제조 방법 |
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JP5956471B2 (ja) | 2016-07-27 |
WO2012104656A3 (en) | 2013-05-10 |
US9793420B2 (en) | 2017-10-17 |
EP2671259A2 (en) | 2013-12-11 |
US20130306142A1 (en) | 2013-11-21 |
WO2012104656A2 (en) | 2012-08-09 |
EP2671259B1 (en) | 2015-08-26 |
GB201101910D0 (en) | 2011-03-23 |
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