JP2014503132A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 230000031700 light absorption Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 8
- 239000011669 selenium Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 235000012773 waffles Nutrition 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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Abstract
【解決手段】本発明に従う太陽電池は、基板の上に配置される透明電極層、上記透明電極層の上に配置され、傾斜した側面を含むパターン部を多数個含むパターン層、上記パターン層の上に配置される光吸収層、及び上記光吸収層の上に配置される裏面電極層を含む。
【選択図】図1
Description
Claims (18)
- 基板の上に配置される透明電極層と、
前記透明電極層の上に配置され、傾斜した側面を含むパターン部を多数個含むパターン層と、
前記パターン層の上に配置される光吸収層と、
前記光吸収層の上に配置される裏面電極層と、
を含むことを特徴とする、太陽電池。 - 前記多数個のパターン部の各々は前記傾斜した側面により互いに連結されることを特徴とする、請求項1に記載の太陽電池。
- 前記パターン部の高さは前記透明電極層の厚さの0.5倍乃至1.5倍であることを特徴とする、請求項1に記載の太陽電池。
- 前記多数個のパターン部は規則的に配列されたことを特徴とする、請求項1に記載の太陽電池。
- 前記パターン部の表面には凹凸がさらに形成されることを特徴とする、請求項1に記載の太陽電池。
- 前記凹凸の断面は、多角形、球形、半球形、または楕円形であることを特徴とする、請求項5に記載の太陽電池。
- 前記パターン部の上面は、前記基板と水平な水平面を含むことを特徴とする、請求項1に記載の太陽電池。
- 前記パターン部の側面は段部を含むことを特徴とする、請求項1に記載の太陽電池。
- 基板の上に配置される透明電極層と、
前記透明電極層の上に配置され、傾斜した側面を含むパターン部を多数個含むパターン層と、
前記パターン層の上に配置され、前記パターン部に対応する第1パターンを含む光吸収層と、
前記光吸収層の上に配置され、前記パターン部に対応する第2パターンを含む裏面電極層と、
を含むことを特徴とする、太陽電池。 - 前記多数個のパターン部の各々は前記傾斜した側面により互いに連結されることを特徴とする、請求項10に記載の太陽電池。
- 前記パターン部の高さは前記透明電極層の厚さの0.5倍乃至1.5倍であることを特徴とする、請求項10に記載の太陽電池。
- 前記多数個のパターン部は規則的に配列されたことを特徴とする、請求項10に記載の太陽電池。
- 前記パターン部の表面には凹凸がさらに形成されることを特徴とする、請求項10に記載の太陽電池。
- 前記凹凸の断面は、多角形、球形、半球形、または楕円形であることを特徴とする、請求項14に記載の太陽電池。
- 基板の上に透明電極層を形成するステップと、
前記透明電極層の上に、傾斜した側面を含むパターン部を多数個含むパターン層を形成するステップと、
前記パターン層の上に光吸収層を形成するステップと、
前記光吸収層の上に裏面電極層を形成するステップと、
を含むことを特徴とする、太陽電池の製造方法。 - 前記パターン層は前記透明電極層の一部をエッチングして形成されることを特徴とする、請求項17に記載の太陽電池の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0006987 | 2011-01-24 | ||
KR1020110006987A KR20120085571A (ko) | 2011-01-24 | 2011-01-24 | 태양 전지 |
PCT/KR2011/008857 WO2012102469A2 (en) | 2011-01-24 | 2011-11-18 | Solar cell and manufacturing method of the same |
Publications (2)
Publication Number | Publication Date |
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JP2014503132A true JP2014503132A (ja) | 2014-02-06 |
JP5947315B2 JP5947315B2 (ja) | 2016-07-06 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2013550383A Expired - Fee Related JP5947315B2 (ja) | 2011-01-24 | 2011-11-18 | 太陽電池 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130025676A1 (ja) |
EP (1) | EP2529410A4 (ja) |
JP (1) | JP5947315B2 (ja) |
KR (1) | KR20120085571A (ja) |
CN (1) | CN103168365B (ja) |
WO (1) | WO2012102469A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112103278B (zh) * | 2020-08-06 | 2021-05-11 | 常熟理工学院 | 一种具备微结构的硅基叠层太阳能电池及其制备方法 |
CN115706185B (zh) * | 2021-08-11 | 2024-02-13 | 江苏宜兴德融科技有限公司 | 太阳能电池器件及太阳能电池制造方法 |
Citations (6)
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JP2008159799A (ja) * | 2006-12-22 | 2008-07-10 | Sanyo Electric Co Ltd | 光起電力装置 |
US20100186816A1 (en) * | 2009-01-23 | 2010-07-29 | Samsung Electronics Co., Ltd. | Solar cell |
US20100206368A1 (en) * | 2009-02-16 | 2010-08-19 | Taeyoun Kim | Thin film solar cell and manufacturing method for the same |
JP2010251704A (ja) * | 2009-04-17 | 2010-11-04 | Lg Display Co Ltd | 太陽電池の製造方法 |
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EP1096577B9 (en) * | 1999-10-27 | 2016-06-01 | Kaneka Corporation | Method of producing a thin-film photovoltaic device |
US8816191B2 (en) * | 2005-11-29 | 2014-08-26 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
KR101368905B1 (ko) * | 2007-12-20 | 2014-02-28 | 주성엔지니어링(주) | 박막형 태양전지의 제조방법 |
JP4418500B2 (ja) * | 2008-03-28 | 2010-02-17 | 三菱重工業株式会社 | 光電変換装置及びその製造方法 |
KR20100086925A (ko) * | 2009-01-23 | 2010-08-02 | 삼성전자주식회사 | 태양 전지 |
JP2010205804A (ja) * | 2009-02-27 | 2010-09-16 | Mitsubishi Heavy Ind Ltd | 光電変換装置 |
WO2010129163A2 (en) * | 2009-05-06 | 2010-11-11 | Thinsilicon Corporation | Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks |
-
2011
- 2011-01-24 KR KR1020110006987A patent/KR20120085571A/ko not_active Application Discontinuation
- 2011-11-18 EP EP11856687.6A patent/EP2529410A4/en not_active Withdrawn
- 2011-11-18 WO PCT/KR2011/008857 patent/WO2012102469A2/en active Application Filing
- 2011-11-18 CN CN201180049948.0A patent/CN103168365B/zh not_active Expired - Fee Related
- 2011-11-18 US US13/640,403 patent/US20130025676A1/en not_active Abandoned
- 2011-11-18 JP JP2013550383A patent/JP5947315B2/ja not_active Expired - Fee Related
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CN103168365B (zh) | 2019-04-09 |
JP5947315B2 (ja) | 2016-07-06 |
WO2012102469A2 (en) | 2012-08-02 |
WO2012102469A3 (en) | 2012-09-20 |
US20130025676A1 (en) | 2013-01-31 |
CN103168365A (zh) | 2013-06-19 |
EP2529410A2 (en) | 2012-12-05 |
KR20120085571A (ko) | 2012-08-01 |
EP2529410A4 (en) | 2017-12-06 |
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