JP2014241414A5 - - Google Patents

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JP2014241414A5
JP2014241414A5 JP2014139445A JP2014139445A JP2014241414A5 JP 2014241414 A5 JP2014241414 A5 JP 2014241414A5 JP 2014139445 A JP2014139445 A JP 2014139445A JP 2014139445 A JP2014139445 A JP 2014139445A JP 2014241414 A5 JP2014241414 A5 JP 2014241414A5
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semiconductor device
image
indirect
band gap
contact terminals
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JP2014139445A
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JP5893683B2 (ja
JP2014241414A (ja
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JP2014139445A 2006-05-05 2014-07-07 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム Active JP5893683B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2006902366 2006-05-05
AU2006902366A AU2006902366A0 (en) 2006-05-05 Method and system for testing indirect bandgap semiconductor devices using luminescence imaging

Related Parent Applications (1)

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JP2009508050A Division JP2009536448A (ja) 2006-05-05 2007-05-04 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム

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JP2014241414A JP2014241414A (ja) 2014-12-25
JP2014241414A5 true JP2014241414A5 (https=) 2015-03-05
JP5893683B2 JP5893683B2 (ja) 2016-03-23

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JP2009508050A Pending JP2009536448A (ja) 2006-05-05 2007-05-04 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム
JP2014139445A Active JP5893683B2 (ja) 2006-05-05 2014-07-07 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム

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US (3) US8710860B2 (https=)
EP (1) EP2024716B1 (https=)
JP (2) JP2009536448A (https=)
CN (4) CN103185854B (https=)
HU (1) HUE050537T2 (https=)
WO (1) WO2007128060A1 (https=)

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