CN103185854B - 利用发光成像测试间接带隙半导体器件的方法和系统 - Google Patents
利用发光成像测试间接带隙半导体器件的方法和系统 Download PDFInfo
- Publication number
- CN103185854B CN103185854B CN201310054383.6A CN201310054383A CN103185854B CN 103185854 B CN103185854 B CN 103185854B CN 201310054383 A CN201310054383 A CN 201310054383A CN 103185854 B CN103185854 B CN 103185854B
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- semiconductor device
- bandgap semiconductor
- indirect bandgap
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 173
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004020 luminiscence type Methods 0.000 title abstract description 39
- 238000003384 imaging method Methods 0.000 title abstract description 15
- 238000012360 testing method Methods 0.000 title abstract description 10
- 230000005284 excitation Effects 0.000 claims abstract description 39
- 230000004044 response Effects 0.000 claims abstract description 13
- 238000005424 photoluminescence Methods 0.000 claims description 86
- 238000005401 electroluminescence Methods 0.000 claims description 52
- 238000012545 processing Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000005693 optoelectronics Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 26
- 230000002950 deficient Effects 0.000 description 10
- 238000005286 illumination Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 8
- 230000001939 inductive effect Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
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- 206010019114 Hand fracture Diseases 0.000 description 2
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- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 238000007689 inspection Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2006902366 | 2006-05-05 | ||
| AU2006902366A AU2006902366A0 (en) | 2006-05-05 | Method and system for testing indirect bandgap semiconductor devices using luminescence imaging | |
| CN2007800254260A CN101490517B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800254260A Division CN101490517B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103185854A CN103185854A (zh) | 2013-07-03 |
| CN103185854B true CN103185854B (zh) | 2015-07-01 |
Family
ID=38667333
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310054383.6A Active CN103185854B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
| CN201310054248.1A Active CN103175814B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
| CN201610004485.0A Active CN105675555B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和设备 |
| CN2007800254260A Expired - Fee Related CN101490517B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310054248.1A Active CN103175814B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
| CN201610004485.0A Active CN105675555B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和设备 |
| CN2007800254260A Expired - Fee Related CN101490517B (zh) | 2006-05-05 | 2007-05-04 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8710860B2 (https=) |
| EP (1) | EP2024716B1 (https=) |
| JP (2) | JP2009536448A (https=) |
| CN (4) | CN103185854B (https=) |
| HU (1) | HUE050537T2 (https=) |
| WO (1) | WO2007128060A1 (https=) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103185854B (zh) * | 2006-05-05 | 2015-07-01 | Bt成像股份有限公司 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
| DE102007007140B4 (de) | 2007-02-09 | 2009-01-29 | Astrium Gmbh | Verfahren und Anordnung zur Detektion mechanischer Defekte eines Halbleiter-Bauelements, insbesondere einer Solarzelle oder Solarzellen-Anordnung |
| EP2135068A4 (en) | 2007-03-10 | 2013-05-15 | Ruv Systems B V | METHOD AND DEVICE FOR IN-LINE QUALITY CONTROL OF WAFER |
| US9933394B2 (en) | 2007-03-10 | 2018-04-03 | Sergei Ostapenko | Method and apparatus for detecting cracks and delamination in composite materials |
| US8483476B2 (en) * | 2007-08-30 | 2013-07-09 | Bt Imaging Pty Ltd | Photovoltaic cell manufacturing |
| US8933320B2 (en) * | 2008-01-18 | 2015-01-13 | Tenksolar, Inc. | Redundant electrical architecture for photovoltaic modules |
| CN101971040B (zh) * | 2008-02-22 | 2014-11-26 | 弗朗霍夫应用科学研究促进协会 | 用于表征半导体构件的测量方法和装置 |
| US20090297017A1 (en) * | 2008-03-25 | 2009-12-03 | Hudgings Janice A | High resolution multimodal imaging for non-destructive evaluation of polysilicon solar cells |
| CN102017191B (zh) | 2008-03-31 | 2014-05-28 | Bt成像股份有限公司 | 用于晶片成像及处理的方法和设备 |
| WO2009129575A1 (en) * | 2008-04-23 | 2009-10-29 | Bt Imaging Pty Ltd | Device characterisation utilising spatially resolved luminescence imaging |
| DE102008052223A1 (de) | 2008-10-17 | 2010-04-22 | Albert-Ludwigs-Universität Freiburg | Lumineszenzscanner sowie Verfahren zur Detektion von Lumineszenz in Halbleiterbauteilen |
| RU2384838C1 (ru) * | 2008-12-23 | 2010-03-20 | Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН | СПОСОБ ТЕСТИРОВАНИЯ ЧИПОВ КАСКАДНЫХ ФОТОПРЕОБРАЗОВАТЕЛЕЙ НА ОСНОВЕ СОЕДИНЕНИЙ Al-Ga-In-As-P И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ |
| DE102009021799A1 (de) * | 2009-05-18 | 2010-11-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur ortsaufgelösten Bestimmung des Serienwiderstandes einer Halbleiterstruktur |
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| FR3070560B1 (fr) * | 2017-08-25 | 2019-09-13 | Electricite De France | Procede d'analyse quantitative d'une installation comprenant un module electroluminescent |
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| CN109239023B (zh) * | 2018-08-28 | 2020-11-17 | 西安工业大学 | 一种基于自由载流子吸收成像的半导体材料特性测量方法 |
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| US7601941B2 (en) | 2004-11-30 | 2009-10-13 | National University Corporation NARA Institute of Science and Technology | Method and apparatus for evaluating solar cell and use thereof |
| DE102005040010A1 (de) | 2005-08-23 | 2007-03-15 | Rwe Schott Solar Gmbh | Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element |
| US7847237B2 (en) | 2006-05-02 | 2010-12-07 | National University Corporation Nara | Method and apparatus for testing and evaluating performance of a solar cell |
| CN103185854B (zh) * | 2006-05-05 | 2015-07-01 | Bt成像股份有限公司 | 利用发光成像测试间接带隙半导体器件的方法和系统 |
| CN102017191B (zh) * | 2008-03-31 | 2014-05-28 | Bt成像股份有限公司 | 用于晶片成像及处理的方法和设备 |
| CN102483378B (zh) * | 2009-07-20 | 2014-06-18 | Bt成像股份有限公司 | 半导体材料光致发光测量中掺杂浓度和少数载流子寿命分离 |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20140191776A1 (en) | 2014-07-10 |
| CN105675555A (zh) | 2016-06-15 |
| US8710860B2 (en) | 2014-04-29 |
| EP2024716A1 (en) | 2009-02-18 |
| CN103175814A (zh) | 2013-06-26 |
| US9912291B2 (en) | 2018-03-06 |
| JP5893683B2 (ja) | 2016-03-23 |
| WO2007128060A1 (en) | 2007-11-15 |
| CN103175814B (zh) | 2016-02-03 |
| US9482625B2 (en) | 2016-11-01 |
| US20090206287A1 (en) | 2009-08-20 |
| CN103185854A (zh) | 2013-07-03 |
| CN101490517B (zh) | 2013-03-27 |
| JP2009536448A (ja) | 2009-10-08 |
| CN101490517A (zh) | 2009-07-22 |
| EP2024716A4 (en) | 2009-05-13 |
| JP2014241414A (ja) | 2014-12-25 |
| CN105675555B (zh) | 2019-07-12 |
| EP2024716B1 (en) | 2020-07-01 |
| HUE050537T2 (hu) | 2020-12-28 |
| US20170033736A1 (en) | 2017-02-02 |
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