JP2009536448A - ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム - Google Patents

ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム Download PDF

Info

Publication number
JP2009536448A
JP2009536448A JP2009508050A JP2009508050A JP2009536448A JP 2009536448 A JP2009536448 A JP 2009536448A JP 2009508050 A JP2009508050 A JP 2009508050A JP 2009508050 A JP2009508050 A JP 2009508050A JP 2009536448 A JP2009536448 A JP 2009536448A
Authority
JP
Japan
Prior art keywords
semiconductor device
image
contact terminals
band gap
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009508050A
Other languages
English (en)
Japanese (ja)
Inventor
トラプケ、トールステン
バードス、ロバート、アンドルー
Original Assignee
ビーティー イメージング ピーティーワイ リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2006902366A external-priority patent/AU2006902366A0/en
Application filed by ビーティー イメージング ピーティーワイ リミテッド filed Critical ビーティー イメージング ピーティーワイ リミテッド
Publication of JP2009536448A publication Critical patent/JP2009536448A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP2009508050A 2006-05-05 2007-05-04 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム Pending JP2009536448A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2006902366A AU2006902366A0 (en) 2006-05-05 Method and system for testing indirect bandgap semiconductor devices using luminescence imaging
PCT/AU2007/000595 WO2007128060A1 (en) 2006-05-05 2007-05-04 Method and system for testing indirect bandgap semiconductor devices using luminescence imaging

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014139445A Division JP5893683B2 (ja) 2006-05-05 2014-07-07 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム

Publications (1)

Publication Number Publication Date
JP2009536448A true JP2009536448A (ja) 2009-10-08

Family

ID=38667333

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009508050A Pending JP2009536448A (ja) 2006-05-05 2007-05-04 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム
JP2014139445A Active JP5893683B2 (ja) 2006-05-05 2014-07-07 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014139445A Active JP5893683B2 (ja) 2006-05-05 2014-07-07 ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム

Country Status (6)

Country Link
US (3) US8710860B2 (https=)
EP (1) EP2024716B1 (https=)
JP (2) JP2009536448A (https=)
CN (4) CN103185854B (https=)
HU (1) HUE050537T2 (https=)
WO (1) WO2007128060A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011512537A (ja) * 2008-02-22 2011-04-21 フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー．ファオ． 半導体部品の特性評価のための測定方法及び装置
WO2012147430A1 (ja) * 2011-04-28 2012-11-01 三洋電機株式会社 太陽電池モジュールの評価方法及び太陽電池モジュールの製造方法
KR101767891B1 (ko) * 2014-06-27 2017-08-14 어플라이드 머티어리얼스, 인코포레이티드 선형 검사 시스템
JP2019050718A (ja) * 2017-08-25 2019-03-28 エレクトリシテ・ドゥ・フランス エレクトロルミネセント・モジュールを備える設備の定量分析のための方法
JP2019128247A (ja) * 2018-01-24 2019-08-01 株式会社アイテス 太陽電池試料検査装置、及び太陽電池試料検査方法
DE102010011066B4 (de) * 2010-03-11 2020-10-22 Pi4_Robotics Gmbh Photovoltaikmodul-, oder Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsverfahren und Photovoltaikmodul- oder, Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsvorrichtung

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103185854B (zh) * 2006-05-05 2015-07-01 Bt成像股份有限公司 利用发光成像测试间接带隙半导体器件的方法和系统
DE102007007140B4 (de) 2007-02-09 2009-01-29 Astrium Gmbh Verfahren und Anordnung zur Detektion mechanischer Defekte eines Halbleiter-Bauelements, insbesondere einer Solarzelle oder Solarzellen-Anordnung
EP2135068A4 (en) 2007-03-10 2013-05-15 Ruv Systems B V METHOD AND DEVICE FOR IN-LINE QUALITY CONTROL OF WAFER
US9933394B2 (en) 2007-03-10 2018-04-03 Sergei Ostapenko Method and apparatus for detecting cracks and delamination in composite materials
US8483476B2 (en) * 2007-08-30 2013-07-09 Bt Imaging Pty Ltd Photovoltaic cell manufacturing
US8933320B2 (en) * 2008-01-18 2015-01-13 Tenksolar, Inc. Redundant electrical architecture for photovoltaic modules
US20090297017A1 (en) * 2008-03-25 2009-12-03 Hudgings Janice A High resolution multimodal imaging for non-destructive evaluation of polysilicon solar cells
CN102017191B (zh) 2008-03-31 2014-05-28 Bt成像股份有限公司 用于晶片成像及处理的方法和设备
WO2009129575A1 (en) * 2008-04-23 2009-10-29 Bt Imaging Pty Ltd Device characterisation utilising spatially resolved luminescence imaging
DE102008052223A1 (de) 2008-10-17 2010-04-22 Albert-Ludwigs-Universität Freiburg Lumineszenzscanner sowie Verfahren zur Detektion von Lumineszenz in Halbleiterbauteilen
RU2384838C1 (ru) * 2008-12-23 2010-03-20 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН СПОСОБ ТЕСТИРОВАНИЯ ЧИПОВ КАСКАДНЫХ ФОТОПРЕОБРАЗОВАТЕЛЕЙ НА ОСНОВЕ СОЕДИНЕНИЙ Al-Ga-In-As-P И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ
DE102009021799A1 (de) * 2009-05-18 2010-11-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur ortsaufgelösten Bestimmung des Serienwiderstandes einer Halbleiterstruktur
WO2011017775A1 (en) * 2009-08-14 2011-02-17 Bt Imaging Pty Ltd Photoluminescence imaging systems for silicon photovoltaic cell manufacturing
DE102009039399A1 (de) * 2009-08-31 2011-03-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Vermessung einer Halbleiterstruktur, welche eine Solarzelle oder eine Vorstufe einer Solarzelle ist
US8301409B2 (en) 2009-12-23 2012-10-30 General Electric Company Photon imaging system for detecting defects in photovoltaic devices, and method thereof
TW201140039A (en) * 2010-01-04 2011-11-16 Bt Imaging Pty Ltd Improved illumination systems and methods for photoluminescence imaging of photovoltaic cells and wafers
WO2012016233A1 (en) 2010-07-30 2012-02-02 First Solar, Inc. Photoluminescence measurement tool and associated method
US8934705B2 (en) 2010-08-09 2015-01-13 Bt Imaging Pty Ltd Persistent feature detection
DE102011008261A1 (de) * 2011-01-11 2012-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schiene für die elektrische Kontaktierung eines elektrisch leitfähigen Substrates
US9029801B2 (en) 2011-02-15 2015-05-12 Ysystems, Ltd. Apparatus and method for measuring a luminescent decay
US8350585B2 (en) 2011-05-31 2013-01-08 Primestar Solar, Inc. Simultaneous QE scanning system and methods for photovoltaic devices
CN103765567A (zh) 2011-06-24 2014-04-30 科磊股份有限公司 使用光致发光成像检验发光半导体装置的方法和设备
US8604447B2 (en) 2011-07-27 2013-12-10 Kla-Tencor Corporation Solar metrology methods and apparatus
US20130035881A1 (en) * 2011-08-05 2013-02-07 Kla-Tencor Corporation Method and system for characterizing efficiency impact of interruption defects in photovoltaic cells
DE102011056404A1 (de) 2011-12-14 2013-06-20 Schott Solar Ag Verfahren zur Qualitätsermittlung eines Siliciumwafers
CN102680433A (zh) * 2012-04-18 2012-09-19 贵州大学 发光材料的发光性质复合检测方法及装置
US9885662B2 (en) 2012-07-06 2018-02-06 Bt Imaging Pty Ltd Methods for inspecting semiconductor wafers
DE102012106435A1 (de) 2012-07-17 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Qualitätsbewertung eines aus einem Ingot herausgetrennten Bricks
WO2014035884A1 (en) * 2012-08-27 2014-03-06 Kla-Tencor Corporation Object carrier, system and method for back light inspection
US8568747B1 (en) 2012-10-05 2013-10-29 Silvergate Pharmaceuticals, Inc. Enalapril compositions
FR3004301B1 (fr) * 2013-04-05 2015-04-24 Commissariat Energie Atomique Procede et systeme de controle de la qualite d'un dispositif photovoltaique
KR102068741B1 (ko) 2013-06-04 2020-01-22 삼성디스플레이 주식회사 다결정 규소막의 검사 방법
FR3015770B1 (fr) * 2013-12-19 2016-01-22 Commissariat Energie Atomique Procede et systeme de controle de qualite de cellules photovoltaiques
CN104142351A (zh) * 2014-07-10 2014-11-12 深圳清华大学研究院 半导体激光测试装置及测试方法
WO2016103007A1 (fr) * 2014-12-24 2016-06-30 Arcelormittal Procédé de contrôle d'un support comprenant un substrat métallique, un revêtement diélectrique, et une couche conductrice
US9564854B2 (en) 2015-05-06 2017-02-07 Sunpower Corporation Photonic degradation monitoring for semiconductor devices
US9463183B1 (en) 2015-10-30 2016-10-11 Silvergate Pharmaceuticals, Inc. Lisinopril formulations
JP6716374B2 (ja) * 2016-07-12 2020-07-01 ソーラーフロンティア株式会社 バンドギャップ測定方法、バンドギャップ測定装置
CN108429539A (zh) 2017-02-14 2018-08-21 林敬杰 电站评估方法与装置
GB201801910D0 (en) 2018-02-06 2018-03-21 Analog Devices Global Unlimited Co A non-contacting voltage measuring apparatus
US20190089301A1 (en) * 2017-09-18 2019-03-21 X Development Llc System and method for solar cell defect detection
US11428656B2 (en) 2018-07-05 2022-08-30 AhuraTech LLC Electroluminescent methods and system for real-time measurements of physical properties
US11460403B2 (en) 2018-07-05 2022-10-04 AhuraTech LLC Electroluminescent methods and devices for characterization of biological specimens
US11393387B2 (en) 2018-07-05 2022-07-19 AhuraTech LLC Open-circuit electroluminescence
CN109239023B (zh) * 2018-08-28 2020-11-17 西安工业大学 一种基于自由载流子吸收成像的半导体材料特性测量方法
US12525473B2 (en) 2022-06-01 2026-01-13 Tokyo Electron Limited Optical sensor for remote temperature measurements
DE102023120182B3 (de) * 2023-07-28 2024-08-22 Hanwha Q Cells Gmbh Verfahren zum Testen einer UV-Degradation einer Solarzelle
ES3009576A1 (es) * 2023-09-26 2025-03-27 Univ Valladolid Sistema y metodo de inspeccion de modulos fotovoltaicos en funcionamiento

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02296347A (ja) * 1989-05-10 1990-12-06 Hamamatsu Photonics Kk 発光効率評価方法および装置
JP2002083852A (ja) * 2000-09-08 2002-03-22 Mitsubishi Materials Silicon Corp シリコンウェーハの品質評価方法
JP2007059907A (ja) * 2005-08-23 2007-03-08 Schott Solar Gmbh 半導体コンポーネント部品中の製造エラーの位置を検出する方法および装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006717A (en) * 1988-12-26 1991-04-09 Matsushita Electric Industrial Co., Ltd. Method of evaluating a semiconductor device and an apparatus for performing the same
US5103182A (en) * 1990-04-02 1992-04-07 Texas Instruments Incorporated Electromagnetic wave measurement of conductive layers of a semiconductor wafer during processing in a fabrication chamber
JP3285681B2 (ja) * 1993-04-28 2002-05-27 ファナック株式会社 サーボモータの制御方法
US5661408A (en) * 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
JPH0927526A (ja) 1995-03-16 1997-01-28 Toshiba Ceramics Co Ltd 半導体基材の検査方法
GB9618897D0 (en) * 1996-09-10 1996-10-23 Bio Rad Micromeasurements Ltd Micro defects in silicon wafers
DE19914115A1 (de) 1998-04-20 1999-11-04 Gfai Ges Zur Foerderung Angewa Verfahren und System zur Fehleranalyse bei polykristallinen Wafern, Solarzellen und Solarmodulen, insbesondere zur Bestimmung der prozeß- und strukturbedingten mechanischen Spannungen
US6236044B1 (en) * 1998-08-21 2001-05-22 Trw Inc. Method and apparatus for inspection of a substrate by use of a ring illuminator
JP3216616B2 (ja) * 1998-10-06 2001-10-09 日本電気株式会社 半導体装置
US6545500B1 (en) * 1999-12-08 2003-04-08 John E. Field Use of localized temperature change in determining the location and character of defects in flat-panel displays
US6534774B2 (en) 2000-09-08 2003-03-18 Mitsubishi Materials Silicon Corporation Method and apparatus for evaluating the quality of a semiconductor substrate
GB0107618D0 (en) * 2001-03-27 2001-05-16 Aoti Operating Co Inc Detection and classification of micro-defects in semi-conductors
JP3944439B2 (ja) * 2002-09-26 2007-07-11 株式会社日立ハイテクノロジーズ 電子線を用いた検査方法および検査装置
EP1416288B1 (de) * 2002-10-23 2005-03-02 EADS Astrium GmbH Verfahren und Anordnung zur optischen Detektion mechanischer Defekte in Halbleiter-Bauelementen, insbesondere in Solarzellen-Anordnungen
US6998849B2 (en) * 2003-09-27 2006-02-14 Agilent Technologies, Inc. Capacitive sensor measurement method for discrete time sampled system for in-circuit test
US7119569B2 (en) * 2004-03-05 2006-10-10 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US20050252545A1 (en) * 2004-05-12 2005-11-17 Spire Corporation Infrared detection of solar cell defects under forward bias
DE102004034140A1 (de) * 2004-07-15 2006-02-23 Covion Organic Semiconductors Gmbh Verwendung von Polymeren für Up-conversion und Vorrichtungen zur Up-conversion
US7601941B2 (en) 2004-11-30 2009-10-13 National University Corporation NARA Institute of Science and Technology Method and apparatus for evaluating solar cell and use thereof
US7847237B2 (en) 2006-05-02 2010-12-07 National University Corporation Nara Method and apparatus for testing and evaluating performance of a solar cell
CN103185854B (zh) * 2006-05-05 2015-07-01 Bt成像股份有限公司 利用发光成像测试间接带隙半导体器件的方法和系统
CN102017191B (zh) * 2008-03-31 2014-05-28 Bt成像股份有限公司 用于晶片成像及处理的方法和设备
CN102483378B (zh) * 2009-07-20 2014-06-18 Bt成像股份有限公司 半导体材料光致发光测量中掺杂浓度和少数载流子寿命分离

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02296347A (ja) * 1989-05-10 1990-12-06 Hamamatsu Photonics Kk 発光効率評価方法および装置
JP2002083852A (ja) * 2000-09-08 2002-03-22 Mitsubishi Materials Silicon Corp シリコンウェーハの品質評価方法
JP2007059907A (ja) * 2005-08-23 2007-03-08 Schott Solar Gmbh 半導体コンポーネント部品中の製造エラーの位置を検出する方法および装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011512537A (ja) * 2008-02-22 2011-04-21 フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー．ファオ． 半導体部品の特性評価のための測定方法及び装置
DE102010011066B4 (de) * 2010-03-11 2020-10-22 Pi4_Robotics Gmbh Photovoltaikmodul-, oder Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsverfahren und Photovoltaikmodul- oder, Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsvorrichtung
WO2012147430A1 (ja) * 2011-04-28 2012-11-01 三洋電機株式会社 太陽電池モジュールの評価方法及び太陽電池モジュールの製造方法
KR101767891B1 (ko) * 2014-06-27 2017-08-14 어플라이드 머티어리얼스, 인코포레이티드 선형 검사 시스템
KR20170132912A (ko) * 2014-06-27 2017-12-04 어플라이드 머티어리얼스, 인코포레이티드 선형 검사 시스템
KR102139218B1 (ko) 2014-06-27 2020-07-29 어플라이드 머티어리얼스, 인코포레이티드 선형 검사 시스템
JP2019050718A (ja) * 2017-08-25 2019-03-28 エレクトリシテ・ドゥ・フランス エレクトロルミネセント・モジュールを備える設備の定量分析のための方法
JP2019128247A (ja) * 2018-01-24 2019-08-01 株式会社アイテス 太陽電池試料検査装置、及び太陽電池試料検査方法

Also Published As

Publication number Publication date
US20140191776A1 (en) 2014-07-10
CN103185854B (zh) 2015-07-01
CN105675555A (zh) 2016-06-15
US8710860B2 (en) 2014-04-29
EP2024716A1 (en) 2009-02-18
CN103175814A (zh) 2013-06-26
US9912291B2 (en) 2018-03-06
JP5893683B2 (ja) 2016-03-23
WO2007128060A1 (en) 2007-11-15
CN103175814B (zh) 2016-02-03
US9482625B2 (en) 2016-11-01
US20090206287A1 (en) 2009-08-20
CN103185854A (zh) 2013-07-03
CN101490517B (zh) 2013-03-27
CN101490517A (zh) 2009-07-22
EP2024716A4 (en) 2009-05-13
JP2014241414A (ja) 2014-12-25
CN105675555B (zh) 2019-07-12
EP2024716B1 (en) 2020-07-01
HUE050537T2 (hu) 2020-12-28
US20170033736A1 (en) 2017-02-02

Similar Documents

Publication Publication Date Title
JP5893683B2 (ja) ルミネセンス像形成を用いた間接バンドギャップ半導体の試験方法およびシステム
KR101365363B1 (ko) 간접 밴드갭 반도체 구조 검사 방법 및 시스템
CN102859338A (zh) 时间分辨光致发光成像系统和光伏电池检验的方法
TWI829239B (zh) 發光二極體晶粒的檢測裝置及檢測方法
TWM677346U (zh) 多接面光電元件的檢測系統

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100412

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120629

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120710

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121010

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121211

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130410

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20130522

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20130628

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131030

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131105

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140404

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140409