JP2014222729A - 半導体装置の製造方法及び半導体装置の製造装置 - Google Patents

半導体装置の製造方法及び半導体装置の製造装置 Download PDF

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JP2014222729A
JP2014222729A JP2013102260A JP2013102260A JP2014222729A JP 2014222729 A JP2014222729 A JP 2014222729A JP 2013102260 A JP2013102260 A JP 2013102260A JP 2013102260 A JP2013102260 A JP 2013102260A JP 2014222729 A JP2014222729 A JP 2014222729A
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Prior art keywords
semiconductor device
wires
bonding
adherend
manufacturing apparatus
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English (en)
Inventor
浩史 野津
Hiroshi Nozu
浩史 野津
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2013102260A priority Critical patent/JP2014222729A/ja
Priority to PCT/JP2014/061150 priority patent/WO2014185223A1/ja
Publication of JP2014222729A publication Critical patent/JP2014222729A/ja
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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Abstract

【課題】複数のワイヤにより第１被着体と第２被着体との間を接続する際に、ワイヤボンディングに要する時間を短くする。
【解決手段】第１被着体２０と、第２被着体１２０と、第１被着体２０及び第２被着体１２０に電気的に接続された複数のワイヤＷとを備える半導体装置１０の製造方法は、複数のワイヤＷを押圧可能なボンディングツール１２を用いて、複数のワイヤＷを第１被着体２０に同時に接合する第１接合工程と、ボンディングツール１２を用いて、複数のワイヤＷを第２被着体１２０に同時に接合する第２接合工程とを含む。
【選択図】図１

Description

本発明は、半導体装置の製造方法及び半導体装置の製造装置に関する。
ワイヤボンディング装置を用いて、半導体チップとリードとの間をワイヤにより接続する方法が知られている（特許文献１参照）。
特開平６−１８１２４３号公報
上記方法では、半導体チップとリードとの間でボンディングツールを１回移動することによって、１本のワイヤにより半導体チップとリードとの間を接続することができる。そのため、半導体チップとリードとの間を複数のワイヤにより接続する場合、ボンディングツールを、半導体チップとリードとの間で何度も往復させる必要がある。そのため、ワイヤの本数が増えるに連れて、ワイヤボンディングに要する時間が長くなる。
本発明は、複数のワイヤにより第１被着体と第２被着体との間を接続する際に、ワイヤボンディングに要する時間を短くすることができる半導体装置の製造方法及び半導体装置の製造装置を提供することを目的とする。
本発明の一側面に係る半導体装置の製造方法は、第１被着体と、第２被着体と、前記第１被着体及び前記第２被着体に電気的に接続された複数のワイヤとを備える半導体装置の製造方法であって、前記複数のワイヤを押圧可能なボンディングツールを用いて、前記複数のワイヤを前記第１被着体に同時に接合する第１接合工程と、前記ボンディングツールを用いて、前記複数のワイヤを前記第２被着体に同時に接合する第２接合工程と、を含む。
この方法では、複数のワイヤにより第１被着体と第２被着体との間を接続する際に、ワイヤボンディングに要する時間を短くすることができる。
前記ボンディングツールが、単一のボンディング部材を備え、前記単一のボンディング部材が、前記複数のワイヤを押圧可能であってもよい。
前記ボンディングツールが、複数のボンディング部材を備え、前記複数のボンディング部材のそれぞれが、前記複数のワイヤのそれぞれを押圧可能であってもよい。
この場合、ボンディング部材の数を変更することによって、押圧可能なワイヤの本数を容易に変更することができる。
前記複数のボンディング部材同士の間隔が可変であってもよい。
この場合、ボンディング部材同士の間隔を変更することによって、ワイヤ同士の間隔を容易に変更することができる。
前記半導体装置の材料が、ワイドバンドギャップ半導体を含んでもよい。
シリコン（Ｓｉ）では、半導体装置に小さい電流しか流れないので、多数のワイヤを使用する必要性は低い。しかし、ワイドバンドギャップ半導体では、半導体装置に流れる電流がシリコンよりも大きいので、電流の集中を抑制するためにワイヤの本数を増やす必要性が高い。このように、多くのワイヤが必要とされる場合であっても、ワイヤボンディングに要する時間を短くすることができる。
前記ワイドバンドギャップ半導体がＳｉＣ又はＧａＮであってもよい。
本発明の一側面に係る半導体装置の製造装置は、被着体と前記被着体に電気的に接続された複数のワイヤとを備える半導体装置の製造装置であって、前記複数のワイヤを押圧可能であり、前記複数のワイヤを前記被着体に同時に接合するためのボンディングツールを備える。
この半導体装置の製造装置を用いると、複数のワイヤにより第１被着体と第２被着体との間を接続する際に、ワイヤボンディングに要する時間を短くすることができる。
前記ボンディングツールが、単一のボンディング部材を備え、前記単一のボンディング部材が、前記複数のワイヤを押圧可能であってもよい。
前記ボンディングツールが、複数のボンディング部材を備え、前記複数のボンディング部材のそれぞれが、前記複数のワイヤのそれぞれを押圧可能であってもよい。
この場合、ボンディング部材の数を変更することによって、ワイヤの本数を容易に変更することができる。
前記複数のボンディング部材同士の間隔が可変であってもよい。
この場合、ボンディング部材同士の間隔を変更することによって、ワイヤ同士の間隔を容易に変更することができる。
本発明によれば、複数のワイヤにより第１被着体と第２被着体との間を接続する際に、ワイヤボンディングに要する時間を短くすることができる半導体装置の製造方法及び半導体装置の製造装置が提供され得る。
第１実施形態に係る半導体装置の製造装置を模式的に示す正面図である。 図１の半導体装置の製造装置のボンディングツールを模式的に示す図である。 第１実施形態に係る半導体装置の製造装置を模式的に示す側面図である。 第１実施形態に係る半導体装置の製造方法の一工程を模式的に示す図である。 第１実施形態に係る半導体装置の製造方法により製造される半導体装置の一例を模式的に示す図である。 第１実施形態に係る半導体装置の製造方法により製造される半導体装置の一例を模式的に示す図である。 第２実施形態に係る半導体装置の製造装置を模式的に示す正面図である。 第３実施形態に係る半導体装置の製造装置を模式的に示す正面図である。
以下、添付図面を参照しながら本発明の実施形態が詳細に説明される。図面の説明において、同一又は同等の要素には同一符号が用いられ、重複する説明は省略される。図１〜図７にはＸＹＺ直交座標系が示される。
（第１実施形態）
図１は、第１実施形態に係る半導体装置の製造装置を模式的に示す正面図である。図３は、図１の半導体装置の製造装置を模式的に示す側面図である。図１及び図３に示される半導体装置の製造装置１０は、例えばワイヤボンディング装置である。半導体装置の製造装置１０は、ボンディングツール１２を備える。ボンディングツール１２は、複数のワイヤＷを押圧可能であり、複数のワイヤＷを第１被着体２０に同時に接合する。ボンディングツール１２は、複数のワイヤＷを第１被着体２０に押圧することによって、複数のワイヤＷと第１被着体２０とを接合することができる。第１被着体２０は、半導体装置の製造装置１０のステージ１６上に載置され得る。
本実施形態において、ボンディングツール１２は、単一のボンディング部材１２Ｂを備える。ボンディング部材１２Ｂは、Ｚ方向に複数のワイヤＷを押圧可能である。単一のボンディング部材１２Ｂは、複数のワイヤＷをそれぞれ保持可能な複数の保持部１２Ａを有してもよい。保持部１２Ａは例えば溝である。保持部１２Ａは、図２に示されるようにＹ方向に沿って延びてもよい。複数のワイヤＷは、Ｙ方向に沿って延びておおり、Ｘ方向に沿って配列され得る。ワイヤＷの軸に垂直な平面（ＸＺ平面）における保持部１２Ａの断面は、例えば図１に示されるようにＶ字形状を有するが、半円形状であってもよい。
ボンディングツール１２には、ボンディングヘッド１５が接続され得る。ボンディングヘッド１５には、ボンディングツール１２を振動させるための振動発生器１３が接続され得る。振動発生器１３は例えば超音波発生器等のトランスデューサーである。ボンディングヘッド１５及びボンディングツール１２は、超音波発生器が発生する超音波により振動し得る。
半導体装置の製造装置１０は、ボンディングツール１２と第１被着体２０との間に複数のワイヤＷを同時に供給可能なワイヤ供給機構１７を備えてもよい。
図４は、第１実施形態に係る半導体装置の製造方法の一工程を模式的に示す図である。本実施形態に係る半導体装置の製造方法は、図１及び図３の半導体装置の製造装置１０を用いることによって実施され得る。
（第１接合工程）
まず、図１及び図３に示されるように、ボンディングツール１２を用いて、複数のワイヤＷを第１被着体２０に同時に接合する。例えば、振動したボンディングツール１２を用いて、複数のワイヤＷを第１被着体２０に押圧することによって、複数のワイヤＷと第１被着体２０とを接合する。ボンディングツール１２は、例えば超音波によってＹ方向（ワイヤＷの軸方向）に振動し得る。ボンディングツール１２は、荷重によりＺ方向（押圧方向）にワイヤＷを押圧し得る。第１被着体２０は、リード、電極端子、半導体チップ、又は配線基板等であってもよい。第１被着体２０が半導体チップの場合、半導体チップの表面には電極が位置する。第１被着体２０が配線基板の場合、配線基板の表面には配線層が位置する。ワイヤＷの材料の例は、アルミニウム、銅、金等の金属を含む。第１被着体２０の表層の材料の例は、アルミニウム、ニッケル、銅、金等の金属を含む。
複数のワイヤＷと第１被着体２０とを接合した後、必要に応じてワイヤ供給機構１７からワイヤＷを供給し、ボンディングツール１２を第２被着体１２０上に移動する。
（第２接合工程）
次に、図４に示されるように、ボンディングツール１２を用いて、複数のワイヤＷを第２被着体１２０に同時に接合する。第２接合工程は、第１被着体２０を第２被着体１２０に置き換えたこと以外は第１接合工程と同様に実施され得る。第２被着体１２０の例は、第１被着体２０の例と同じである。複数のワイヤＷと第２被着体１２０とを接合した後、必要に応じてワイヤＷを切断する。
上記工程を経ることによって、例えば図５に示される半導体装置１００を製造することができる。半導体装置１００は、第１被着体２０と、第２被着体１２０と、第１被着体２０及び第２被着体１２０に電気的に接続された複数のワイヤＷとを備える。半導体装置１００では、複数のワイヤＷにより第１被着体２０と第２被着体１２０との間が電気的に接続されている。この方法では、複数のワイヤＷにより第１被着体２０と第２被着体１２０との間を接続する際に、ワイヤボンディングに要する時間を例えば半分以下に短くすることができる。よって、半導体装置１００の製造に要する時間を短くすることができる。
半導体装置１００の材料は、ワイドバンドギャップ半導体を含んでもよい。ワイドバンドギャップ半導体は、シリコンのバンドギャップよりも大きいバンドギャップを有する。ワイドバンドギャップ半導体の例は、シリコンカーバイド（ＳｉＣ）、窒化ガリウム（ＧａＮ）、ダイヤモンドを含む。例えば、半導体装置１００は、第１被着体２０として半導体チップを備え、半導体チップの材料がワイドバンドギャップ半導体を含んでもよい。
シリコン（Ｓｉ）では、半導体装置１００に小さい電流しか流れないので、多数のワイヤを使用する必要性は低い。しかし、ワイドバンドギャップ半導体では、半導体装置１００に流れる電流がシリコンよりも大きいので、電流の集中を抑制するためにワイヤの本数を増やす必要性が高い。このように、多くのワイヤが必要とされる場合であっても、ワイヤボンディングに要する時間を短くすることができる。
図６は、第１実施形態に係る半導体装置の製造方法により製造される半導体装置の一例を模式的に示す図である。図６に示される半導体装置２００は、例えば電源等に使用される電力用半導体装置である。半導体装置２００は、半導体装置の製造装置１０を用いて製造され得る。半導体装置２００は、第１被着体としての半導体チップ２２と、第２被着体としての電極端子２６Ａ，２６Ｂと、複数のワイヤ２４Ａと、複数のワイヤ２４Ｂとを備える。複数のワイヤ２４Ａは、半導体チップ２２及び電極端子２６Ａに電気的に接続される。複数のワイヤ２４Ｂは、半導体チップ２２及び電極端子２６Ｂに電気的に接続される。半導体チップ２２は、接着層３２を介して配線基板４０のチップ搭載面４６ａに搭載され得る。
複数のワイヤ２４Ａは、電極端子２６Ａと半導体チップ２２との間を接続する。複数のワイヤ２４Ｂは、電極端子２６Ｂと半導体チップ２２との間を接続する。ワイヤ２４Ａ，２４Ｂは、図５に示されるワイヤＷの一例である。半導体チップ２２は、図５に示される第１被着体２０の一例である。電極端子２６Ａ，２６Ｂは、図５に示される第２被着体１２０の一例である。複数のワイヤ２４Ａは、半導体装置の製造装置１０を用いて、電極端子２６Ａ及び半導体チップ２２に接合される。複数のワイヤ２４Ｂは、半導体装置の製造装置１０を用いて、電極端子２６Ｂ及び半導体チップ２２に接合される。
配線基板４０は、絶縁性基板４２と、絶縁性基板４２の表面に設けられた配線層４６と、絶縁性基板４２の裏面に設けられた放熱層４４とを備える。配線層４６の材料の例は、銅及び銅合金等の金属を含む。絶縁性基板４２の材料の例は、アルミナ等のセラミックを含む。放熱層４４の材料の例は、銅及び銅合金等の金属を含む。放熱層４４は、例えば半田等からなる接着層４８を介してヒートシンク５０に接着される。ヒートシンク５０の材料の例は、金属を含む。
半導体チップ２２及び配線基板４０は、ケース５２に収容される。ケース５２は、例えば筒状である。ケース５２の一方の開口はヒートシンク５０によって封止され得る。ケース５２の他方の開口は蓋５４によって封止され得る。ケース５２の材料の例は、ポリブチレンテレフタレート（ＰＢＴ）又はポリフェニレンサルファイド（ＰＰＳ）樹脂といったエンジニヤリングプラスチック等の樹脂を含む。蓋５４の材料の例は熱可塑性樹脂を含む。ケース５２の内側には、応力緩和のため、例えばシリコーンゲル等のゲル５６が注入され得る。
電極端子２６Ａ，２６Ｂは、ケース５２の内壁に沿って延びており、蓋５４に形成された開口を通って外部に突出する。電極端子２６Ａ，２６Ｂは、プレス加工等により作製され得る。
半導体チップ２２の例は、バイポーラトランジスタ、ＭＯＳ−ＦＥＴ、絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）等のトランジスタ、ダイオードを含む。半導体チップ２２の材料の例は、ワイドバンドギャップ半導体、シリコンその他の半導体を含む。ワイドバンドギャップ半導体は、シリコンのバンドギャップよりも大きいバンドギャップを有する。ワイドバンドギャップ半導体の例は、シリコンカーバイド（ＳｉＣ）、窒化ガリウム（ＧａＮ）、ダイヤモンドを含む。
半導体装置２００では、複数のワイヤ２４Ａにより電極端子２６Ａと半導体チップ２２との間を接続する際に、ワイヤボンディングに要する時間を短くすることができる。複数のワイヤ２４Ｂにより電極端子２６Ｂと半導体チップ２２との間を接続する際に、ワイヤボンディングに要する時間を短くすることができる。よって、半導体装置２００の製造に要する時間を短くすることができる。
（第２実施形態）
図７は、第２実施形態に係る半導体装置の製造装置を模式的に示す正面図である。図７に示される半導体装置の製造装置１１０は、ボンディングツール１２に代えてボンディングツール１１２を備えること以外は半導体装置の製造装置１０と同じ構成を備える。
ボンディングツール１１２は、複数のボンディング部材１１２Ｂを備える。複数のボンディング部材１１２Ｂのそれぞれは、Ｚ方向に複数のワイヤＷのそれぞれを押圧可能である。各ボンディング部材１１２Ｂは、ワイヤＷを保持可能な保持部１２Ａを有してもよい。複数のボンディング部材１１２Ｂは、互いに離間してＸ方向に沿って配列され得る。
半導体装置の製造装置１１０では、半導体装置の製造装置１０と同様の作用効果が得られる。さらに、半導体装置の製造装置１１０では、ボンディング部材１１２Ｂの数を変更することによって、押圧可能なワイヤＷの本数を容易に変更することができる。
（第３実施形態）
図８は、第３実施形態に係る半導体装置の製造装置を模式的に示す正面図である。図８に示される半導体装置の製造装置２１０は、複数のボンディング部材１１２Ｂ同士の間隔が可変であること以外は半導体装置の製造装置１１０と同じ構成を備える。
半導体装置の製造装置２１０は、複数のボンディング部材１１２Ｂをそれぞれ駆動する複数の駆動装置１８を備える。各駆動装置１８は、ボンディング部材１１２ＢをＸ方向に駆動可能である。
半導体装置の製造装置２１０では、半導体装置の製造装置１１０と同様の作用効果が得られる。さらに、半導体装置の製造装置２１０では、ボンディング部材１１２Ｂ同士の間隔を変更することによって、ワイヤＷ同士の間隔を容易に変更することができる。
以上、本発明の好適な実施形態について詳細に説明されたが、本発明は上記実施形態に限定されない。各実施形態の構成は任意に組み合わせ得る。
例えば、第１被着体２０及び第２被着体１２０は、リード、電極端子、半導体チップ、又は配線基板等であってもよい。
半導体装置２００は、ケース型の半導体装置に限られず、樹脂封止型の半導体装置であってもよい。この場合、ダイパッドに搭載された半導体チップ２２とリードとの間を複数のワイヤ２４Ａ，２４Ｂにより接続することができる。
１０，１１０，２１０…半導体装置の製造装置、１２，１１２…ボンディングツール、２０…第１被着体、１００，２００…半導体装置、１２０…第２被着体、１２Ｂ，１１２Ｂ…ボンディング部材、Ｗ…ワイヤ。

Claims (10)

  1. 第１被着体と、第２被着体と、前記第１被着体及び前記第２被着体に電気的に接続された複数のワイヤとを備える半導体装置の製造方法であって、
    前記複数のワイヤを押圧可能なボンディングツールを用いて、前記複数のワイヤを前記第１被着体に同時に接合する第１接合工程と、
    前記ボンディングツールを用いて、前記複数のワイヤを前記第２被着体に同時に接合する第２接合工程と、
    を含む、半導体装置の製造方法。
  2. 前記ボンディングツールが、単一のボンディング部材を備え、
    前記単一のボンディング部材が、前記複数のワイヤを押圧可能である、請求項１に記載の半導体装置の製造方法。
  3. 前記ボンディングツールが、複数のボンディング部材を備え、
    前記複数のボンディング部材のそれぞれが、前記複数のワイヤのそれぞれを押圧可能である、請求項１に記載の半導体装置の製造方法。
  4. 前記複数のボンディング部材同士の間隔が可変である、請求項３に記載の半導体装置の製造方法。
  5. 前記半導体装置の材料が、ワイドバンドギャップ半導体を含む、請求項１〜４のいずれか一項に記載の半導体装置の製造方法。
  6. 前記ワイドバンドギャップ半導体がＳｉＣ又はＧａＮである、請求項５に記載の半導体装置の製造方法。
  7. 被着体と前記被着体に電気的に接続された複数のワイヤとを備える半導体装置の製造装置であって、
    前記複数のワイヤを押圧可能であり、前記複数のワイヤを前記被着体に同時に接合するためのボンディングツールを備える、半導体装置の製造装置。
  8. 前記ボンディングツールが、単一のボンディング部材を備え、
    前記単一のボンディング部材が、前記複数のワイヤを押圧可能である、請求項７に記載の半導体装置の製造装置。
  9. 前記ボンディングツールが、複数のボンディング部材を備え、
    前記複数のボンディング部材のそれぞれが、前記複数のワイヤのそれぞれを押圧可能である、請求項７に記載の半導体装置の製造装置。
  10. 前記複数のボンディング部材同士の間隔が可変である、請求項９に記載の半導体装置の製造装置。
JP2013102260A 2013-05-14 2013-05-14 半導体装置の製造方法及び半導体装置の製造装置 Pending JP2014222729A (ja)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD771168S1 (en) 2014-10-31 2016-11-08 Coorstek, Inc. Wire bonding ceramic capillary
USD797172S1 (en) 2015-02-03 2017-09-12 Coorstek, Inc. Ceramic bonding tool with textured tip
USD797171S1 (en) 2015-02-03 2017-09-12 Coorstek, Inc. Ceramic bonding tool with textured tip
USD797826S1 (en) 2015-02-03 2017-09-19 Coorstek, Inc. Ceramic bonding tool with textured tip
USD868123S1 (en) 2016-12-20 2019-11-26 Coorstek, Inc. Wire bonding wedge tool

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04267353A (ja) * 1991-02-22 1992-09-22 Hitachi Ltd ワイヤボンディング装置
JP2007067342A (ja) * 2005-09-02 2007-03-15 Ultrasonic Engineering Co Ltd ワイヤボンディング方法およびワイヤボンディング装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD771168S1 (en) 2014-10-31 2016-11-08 Coorstek, Inc. Wire bonding ceramic capillary
USD797172S1 (en) 2015-02-03 2017-09-12 Coorstek, Inc. Ceramic bonding tool with textured tip
USD797171S1 (en) 2015-02-03 2017-09-12 Coorstek, Inc. Ceramic bonding tool with textured tip
USD797826S1 (en) 2015-02-03 2017-09-19 Coorstek, Inc. Ceramic bonding tool with textured tip
USD821468S1 (en) 2015-02-03 2018-06-26 Coorstek, Inc. Ceramic bonding tool with textured tip
USD824969S1 (en) 2015-02-03 2018-08-07 Coorstek, Inc. Ceramic bonding tool with textured tip
USD824970S1 (en) 2015-02-03 2018-08-07 Coorstek, Inc. Ceramic bonding tool with textured tip
USD868123S1 (en) 2016-12-20 2019-11-26 Coorstek, Inc. Wire bonding wedge tool

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