JP2014217891A - ブリッジマンインベストメント鋳造法におけるグレインスターターのための複合の幾何学的設計 - Google Patents

ブリッジマンインベストメント鋳造法におけるグレインスターターのための複合の幾何学的設計 Download PDF

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Publication number
JP2014217891A
JP2014217891A JP2014095698A JP2014095698A JP2014217891A JP 2014217891 A JP2014217891 A JP 2014217891A JP 2014095698 A JP2014095698 A JP 2014095698A JP 2014095698 A JP2014095698 A JP 2014095698A JP 2014217891 A JP2014217891 A JP 2014217891A
Authority
JP
Japan
Prior art keywords
grain
grain starter
starter
article
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2014095698A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014217891A5 (enExample
Inventor
シャン・リュウ
Shan Liu
ウォーレン・タン・キング
Warren Tan King
スリニヴァサン・ラガヴァン
Raghavan Srinivasan
アーサー・エス・ペック
Arthur S Peck
ダヤナンダ・ナラヤナ
Narayana Dayananda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2014217891A publication Critical patent/JP2014217891A/ja
Publication of JP2014217891A5 publication Critical patent/JP2014217891A5/ja
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C13/00—Moulding machines for making moulds or cores of particular shapes
    • B22C13/08—Moulding machines for making moulds or cores of particular shapes for shell moulds or shell cores
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C13/00—Moulding machines for making moulds or cores of particular shapes
    • B22C13/08—Moulding machines for making moulds or cores of particular shapes for shell moulds or shell cores
    • B22C13/085—Moulding machines for making moulds or cores of particular shapes for shell moulds or shell cores by investing a lost pattern
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C7/00—Patterns; Manufacture thereof so far as not provided for in other classes
    • B22C7/02—Lost patterns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C9/00—Moulds or cores; Moulding processes
    • B22C9/06—Permanent moulds for shaped castings
    • B22C9/065—Cooling or heating equipment for moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D15/00—Casting using a mould or core of which a part significant to the process is of high thermal conductivity, e.g. chill casting; Moulds or accessories specially adapted therefor
    • B22D15/04—Machines or apparatus for chill casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Turbine Rotor Nozzle Sealing (AREA)
  • Molds, Cores, And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2014095698A 2013-05-08 2014-05-07 ブリッジマンインベストメント鋳造法におけるグレインスターターのための複合の幾何学的設計 Ceased JP2014217891A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/889,534 2013-05-08
US13/889,534 US9068275B2 (en) 2013-05-08 2013-05-08 Composite geometrical design for a grain starter in a bridgman investment casting process

Publications (2)

Publication Number Publication Date
JP2014217891A true JP2014217891A (ja) 2014-11-20
JP2014217891A5 JP2014217891A5 (enExample) 2017-06-15

Family

ID=50685751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014095698A Ceased JP2014217891A (ja) 2013-05-08 2014-05-07 ブリッジマンインベストメント鋳造法におけるグレインスターターのための複合の幾何学的設計

Country Status (4)

Country Link
US (1) US9068275B2 (enExample)
EP (1) EP2801644A1 (enExample)
JP (1) JP2014217891A (enExample)
CN (1) CN104139175B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10262127B2 (en) * 2017-04-05 2019-04-16 General Electric Company Systems and method for securely sharing and executing data and models
US11123791B2 (en) 2017-10-16 2021-09-21 General Electric Company Method for casting a mold
US11123790B2 (en) 2017-10-16 2021-09-21 General Electric Company Apparatus for casting a mold

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190094A (en) * 1978-10-25 1980-02-26 United Technologies Corporation Rate controlled directional solidification method
JPS5542197A (en) * 1978-09-18 1980-03-25 Howmet Turbine Components Mold for monocrystal casting that directional properties are fixed and its preparation
JPS5942171A (ja) * 1982-03-01 1984-03-08 ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン 一方向凝固鋳型
JPH10139580A (ja) * 1996-11-13 1998-05-26 Japan Steel Works Ltd:The 一方向凝固材の製造方法および一方向凝固装置
JP2003055083A (ja) * 2001-08-10 2003-02-26 Sumitomo Electric Ind Ltd 化合物半導体結晶成長用坩堝
JP2003311392A (ja) * 2002-04-18 2003-11-05 Mitsubishi Heavy Ind Ltd 一方向凝固翼の製造方法及び一方向凝固翼
JP2011524332A (ja) * 2008-06-16 2011-09-01 ジーティー・ソーラー・インコーポレーテッド 方向性凝固によって単結晶シリコンインゴットを成長させるためのシステムおよび方法
JP4903310B2 (ja) * 1998-11-20 2012-03-28 ロールス−ロイス・コーポレーション 鋳造部品を製造する装置
WO2012072633A1 (fr) * 2010-11-29 2012-06-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Echangeur thermique d'un systeme de solidification et/ou de cristallisation d'un materiau semi-conducteur

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US4111252A (en) * 1977-08-01 1978-09-05 United Technologies Corporation Method for making molds and mold components for casting single crystal metallic articles
US4548255A (en) 1982-03-01 1985-10-22 United Technologies Corporation Mold with starter and selector sections for directional solidification casting
US4450889A (en) 1982-08-20 1984-05-29 United Technologies Corporation Mold having a helix for casting single crystal articles
US4612969A (en) * 1983-04-27 1986-09-23 Howmet Turbine Components Corporation Method of and apparatus for casting articles with predetermined crystalline orientation
WO1997007254A1 (en) 1995-08-16 1997-02-27 Northrop Grumman Corporation Reducing wear between structural fiber reinforced ceramic matrix composite automotive engine parts in sliding contacting relationship
US5891527A (en) 1995-09-15 1999-04-06 M/Wave Printed circuit board process using plasma spraying of conductive metal
US5869146A (en) 1997-11-12 1999-02-09 United Technologies Corporation Plasma sprayed mullite coatings on silicon based ceramic materials
US5985470A (en) 1998-03-16 1999-11-16 General Electric Company Thermal/environmental barrier coating system for silicon-based materials
US6299988B1 (en) 1998-04-27 2001-10-09 General Electric Company Ceramic with preferential oxygen reactive layer
US6485848B1 (en) 1998-04-27 2002-11-26 General Electric Company Coated article and method of making
US6129954A (en) 1998-12-22 2000-10-10 General Electric Company Method for thermally spraying crack-free mullite coatings on ceramic-based substrates
US6254935B1 (en) 1999-04-15 2001-07-03 United Technologies Corporation Method for applying a barrier layer to a silicon based substrate
US6410148B1 (en) 1999-04-15 2002-06-25 General Electric Co. Silicon based substrate with environmental/ thermal barrier layer
US6517960B1 (en) 1999-04-26 2003-02-11 General Electric Company Ceramic with zircon coating
US7001679B2 (en) 2001-08-09 2006-02-21 Siemens Westinghouse Power Corporation Protective overlayer for ceramics
US6759151B1 (en) 2002-05-22 2004-07-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multilayer article characterized by low coefficient of thermal expansion outer layer
US6733908B1 (en) 2002-07-08 2004-05-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multilayer article having stabilized zirconia outer layer and chemical barrier layer
US6929852B2 (en) 2002-08-08 2005-08-16 Siemens Westinghouse Power Corporation Protective overlayer for ceramics
US6969555B2 (en) 2003-10-06 2005-11-29 General Electric Company Aluminate coating for a silicon containing substrate
US6844075B1 (en) 2003-10-06 2005-01-18 General Electric Company Environmental barrier coating
US20050211408A1 (en) 2004-03-25 2005-09-29 Bullied Steven J Single crystal investment cast components and methods of making same
CN101928980B (zh) * 2010-09-17 2012-10-03 浙江碧晶科技有限公司 一种用于定向凝固法生长硅晶体的引晶导向模
CN102166643B (zh) 2011-03-30 2013-07-24 江苏中欧材料研究院有限公司 一种防止单晶叶片杂晶缺陷的方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542197A (en) * 1978-09-18 1980-03-25 Howmet Turbine Components Mold for monocrystal casting that directional properties are fixed and its preparation
US4190094A (en) * 1978-10-25 1980-02-26 United Technologies Corporation Rate controlled directional solidification method
JPS5942171A (ja) * 1982-03-01 1984-03-08 ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン 一方向凝固鋳型
JPH10139580A (ja) * 1996-11-13 1998-05-26 Japan Steel Works Ltd:The 一方向凝固材の製造方法および一方向凝固装置
JP4903310B2 (ja) * 1998-11-20 2012-03-28 ロールス−ロイス・コーポレーション 鋳造部品を製造する装置
JP2003055083A (ja) * 2001-08-10 2003-02-26 Sumitomo Electric Ind Ltd 化合物半導体結晶成長用坩堝
JP2003311392A (ja) * 2002-04-18 2003-11-05 Mitsubishi Heavy Ind Ltd 一方向凝固翼の製造方法及び一方向凝固翼
JP2011524332A (ja) * 2008-06-16 2011-09-01 ジーティー・ソーラー・インコーポレーテッド 方向性凝固によって単結晶シリコンインゴットを成長させるためのシステムおよび方法
WO2012072633A1 (fr) * 2010-11-29 2012-06-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Echangeur thermique d'un systeme de solidification et/ou de cristallisation d'un materiau semi-conducteur

Also Published As

Publication number Publication date
CN104139175B (zh) 2017-09-15
US9068275B2 (en) 2015-06-30
US20140332175A1 (en) 2014-11-13
CN104139175A (zh) 2014-11-12
EP2801644A1 (en) 2014-11-12

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