JP2014215549A - 感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法 - Google Patents

感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法 Download PDF

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Publication number
JP2014215549A
JP2014215549A JP2013094564A JP2013094564A JP2014215549A JP 2014215549 A JP2014215549 A JP 2014215549A JP 2013094564 A JP2013094564 A JP 2013094564A JP 2013094564 A JP2013094564 A JP 2013094564A JP 2014215549 A JP2014215549 A JP 2014215549A
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group
general formula
sensitive
radiation
represented
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JP2013094564A
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Japanese (ja)
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JP2014215549A5 (enrdf_load_stackoverflow
Inventor
北村　哲
Satoru Kitamura
哲 北村
渋谷　明規
Akinori Shibuya
明規 渋谷
雅史 小島
Masashi Kojima
雅史 小島
加藤啓太
Keita Kato
啓太 加藤
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2013094564A priority Critical patent/JP2014215549A/ja
Priority to PCT/JP2014/061294 priority patent/WO2014175270A1/ja
Priority to TW103114963A priority patent/TW201441764A/zh
Publication of JP2014215549A publication Critical patent/JP2014215549A/ja
Publication of JP2014215549A5 publication Critical patent/JP2014215549A5/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2013094564A 2013-04-26 2013-04-26 感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法 Abandoned JP2014215549A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013094564A JP2014215549A (ja) 2013-04-26 2013-04-26 感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法
PCT/JP2014/061294 WO2014175270A1 (ja) 2013-04-26 2014-04-22 感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法
TW103114963A TW201441764A (zh) 2013-04-26 2014-04-25 感光化射線性或感放射線性樹脂組成物、及圖案形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013094564A JP2014215549A (ja) 2013-04-26 2013-04-26 感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法

Publications (2)

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JP2014215549A true JP2014215549A (ja) 2014-11-17
JP2014215549A5 JP2014215549A5 (enrdf_load_stackoverflow) 2015-12-10

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JP2013094564A Abandoned JP2014215549A (ja) 2013-04-26 2013-04-26 感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法

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JP (1) JP2014215549A (enrdf_load_stackoverflow)
TW (1) TW201441764A (enrdf_load_stackoverflow)
WO (1) WO2014175270A1 (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015143208A (ja) * 2013-12-25 2015-08-06 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP2015169843A (ja) * 2014-03-07 2015-09-28 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR20160085221A (ko) * 2015-01-07 2016-07-15 스미또모 가가꾸 가부시키가이샤 포토레지스트 조성물 및 포토레지스트 패턴의 제조 방법
JP2016200761A (ja) * 2015-04-13 2016-12-01 Jsr株式会社 ネガ型レジストパターン形成方法及び上層膜形成用組成物
JP2018049091A (ja) * 2016-09-20 2018-03-29 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2020002124A (ja) * 2018-06-20 2020-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020026427A (ja) * 2018-08-08 2020-02-20 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020187349A (ja) * 2019-05-08 2020-11-19 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US10866514B2 (en) * 2016-09-20 2020-12-15 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US11448962B2 (en) 2019-02-05 2022-09-20 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US11687003B2 (en) 2015-04-13 2023-06-27 Jsr Corporation Negative resist pattern-forming method, and composition for upper layer film formation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113912520A (zh) * 2021-10-15 2022-01-11 江苏汉拓光学材料有限公司 光致产酸剂及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012008500A (ja) * 2010-06-28 2012-01-12 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜
JP2012113003A (ja) * 2010-11-19 2012-06-14 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP2012159688A (ja) * 2011-01-31 2012-08-23 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
JP2013033161A (ja) * 2011-08-02 2013-02-14 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
JP2013068778A (ja) * 2011-09-22 2013-04-18 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、及び、電子デバイス
JP2013080004A (ja) * 2011-09-30 2013-05-02 Fujifilm Corp パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びにこれらを用いた電子デバイスの製造方法、及び電子デバイス
JP2013130735A (ja) * 2011-12-21 2013-07-04 Jsr Corp ネガ型のレジストパターン形成方法及びフォトレジスト組成物
JP2013235255A (ja) * 2012-04-10 2013-11-21 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2014133723A (ja) * 2013-01-11 2014-07-24 Shin Etsu Chem Co Ltd スルホニウム塩、レジスト材料及びパターン形成方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012008500A (ja) * 2010-06-28 2012-01-12 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜
JP2012113003A (ja) * 2010-11-19 2012-06-14 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP2012159688A (ja) * 2011-01-31 2012-08-23 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
JP2013033161A (ja) * 2011-08-02 2013-02-14 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
JP2013068778A (ja) * 2011-09-22 2013-04-18 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、及び、電子デバイス
JP2013080004A (ja) * 2011-09-30 2013-05-02 Fujifilm Corp パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びにこれらを用いた電子デバイスの製造方法、及び電子デバイス
JP2013130735A (ja) * 2011-12-21 2013-07-04 Jsr Corp ネガ型のレジストパターン形成方法及びフォトレジスト組成物
JP2013235255A (ja) * 2012-04-10 2013-11-21 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2014133723A (ja) * 2013-01-11 2014-07-24 Shin Etsu Chem Co Ltd スルホニウム塩、レジスト材料及びパターン形成方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015143208A (ja) * 2013-12-25 2015-08-06 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP2015169843A (ja) * 2014-03-07 2015-09-28 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR20160085221A (ko) * 2015-01-07 2016-07-15 스미또모 가가꾸 가부시키가이샤 포토레지스트 조성물 및 포토레지스트 패턴의 제조 방법
JP2016130239A (ja) * 2015-01-07 2016-07-21 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US9575408B2 (en) 2015-01-07 2017-02-21 Sumitomo Chemical Company, Limited Photoresist composition and method for producing photoresist pattern
KR102593397B1 (ko) * 2015-01-07 2023-10-25 스미또모 가가꾸 가부시키가이샤 포토레지스트 조성물 및 포토레지스트 패턴의 제조 방법
JP2016200761A (ja) * 2015-04-13 2016-12-01 Jsr株式会社 ネガ型レジストパターン形成方法及び上層膜形成用組成物
US11687003B2 (en) 2015-04-13 2023-06-27 Jsr Corporation Negative resist pattern-forming method, and composition for upper layer film formation
JP2018049091A (ja) * 2016-09-20 2018-03-29 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US10866514B2 (en) * 2016-09-20 2020-12-15 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP7042551B2 (ja) 2016-09-20 2022-03-28 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP7373307B2 (ja) 2018-06-20 2023-11-02 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020002124A (ja) * 2018-06-20 2020-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020026427A (ja) * 2018-08-08 2020-02-20 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7332372B2 (ja) 2018-08-08 2023-08-23 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US11448962B2 (en) 2019-02-05 2022-09-20 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP2020187349A (ja) * 2019-05-08 2020-11-19 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法

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WO2014175270A1 (ja) 2014-10-30

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