JP2014199789A - 発光素子の作製方法、及び成膜装置 - Google Patents

発光素子の作製方法、及び成膜装置 Download PDF

Info

Publication number
JP2014199789A
JP2014199789A JP2013096132A JP2013096132A JP2014199789A JP 2014199789 A JP2014199789 A JP 2014199789A JP 2013096132 A JP2013096132 A JP 2013096132A JP 2013096132 A JP2013096132 A JP 2013096132A JP 2014199789 A JP2014199789 A JP 2014199789A
Authority
JP
Japan
Prior art keywords
chamber
light
film
film forming
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013096132A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014199789A5 (enExample
Inventor
浩平 横山
Kohei Yokoyama
浩平 横山
池田　寿雄
Toshio Ikeda
寿雄 池田
真一 平佐
Shinichi Hirasa
真一 平佐
安弘 神保
Yasuhiro Jinbo
安弘 神保
奈津子 高瀬
Natsuko Takase
奈津子 高瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013096132A priority Critical patent/JP2014199789A/ja
Publication of JP2014199789A publication Critical patent/JP2014199789A/ja
Publication of JP2014199789A5 publication Critical patent/JP2014199789A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • A—HUMAN NECESSITIES
    • A63—SPORTS; GAMES; AMUSEMENTS
    • A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
    • A63F13/00—Video games, i.e. games using an electronically generated display having two or more dimensions
    • A63F13/30—Interconnection arrangements between game servers and game devices; Interconnection arrangements between game devices; Interconnection arrangements between game servers
    • A63F13/32—Interconnection arrangements between game servers and game devices; Interconnection arrangements between game devices; Interconnection arrangements between game servers using local area network [LAN] connections
    • A63F13/327—Interconnection arrangements between game servers and game devices; Interconnection arrangements between game devices; Interconnection arrangements between game servers using local area network [LAN] connections using wireless networks, e.g. Wi-Fi® or piconet
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/004—Combinations of spectrometers, tandem spectrometers, e.g. MS/MS, MSn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/34—Dynamic spectrometers
    • H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S6/00—Lighting devices intended to be free-standing
    • F21S6/002—Table lamps, e.g. for ambient lighting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/20—Electroluminescent [EL] light sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Multimedia (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electroluminescent Light Sources (AREA)
JP2013096132A 2012-05-04 2013-05-01 発光素子の作製方法、及び成膜装置 Withdrawn JP2014199789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013096132A JP2014199789A (ja) 2012-05-04 2013-05-01 発光素子の作製方法、及び成膜装置

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2012105543 2012-05-04
JP2012105544 2012-05-04
JP2012105544 2012-05-04
JP2012105543 2012-05-04
JP2013053385 2013-03-15
JP2013053385 2013-03-15
JP2013096132A JP2014199789A (ja) 2012-05-04 2013-05-01 発光素子の作製方法、及び成膜装置

Publications (2)

Publication Number Publication Date
JP2014199789A true JP2014199789A (ja) 2014-10-23
JP2014199789A5 JP2014199789A5 (enExample) 2016-06-09

Family

ID=49490467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013096132A Withdrawn JP2014199789A (ja) 2012-05-04 2013-05-01 発光素子の作製方法、及び成膜装置

Country Status (4)

Country Link
US (2) US9578718B2 (enExample)
JP (1) JP2014199789A (enExample)
KR (1) KR102083032B1 (enExample)
CN (1) CN103382545A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017188362A (ja) * 2016-04-07 2017-10-12 住友化学株式会社 有機電子デバイスの製造方法
KR20180085020A (ko) 2015-11-30 2018-07-25 가부시키가이샤 스미카 분세키 센터 유기 전자 소자를 제조하는 제조 장치의 관리 방법
WO2019167121A1 (ja) * 2018-02-27 2019-09-06 シャープ株式会社 表示デバイスの製造方法及び製造装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180002505A (ko) 2016-06-29 2018-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자의 제작 방법
JP7063709B2 (ja) * 2018-04-27 2022-05-09 株式会社アルバック 透明導電膜付き基板の製造装置、透明導電膜付き基板の製造方法
US11512389B2 (en) 2019-03-20 2022-11-29 Samsung Electronincs Co., Ltd. Apparatus for and method of manufacturing semiconductor device
CN111141813A (zh) * 2019-12-31 2020-05-12 中国科学院微电子研究所 一种检测膜片式真空压力计沉积物的装置及其应用
CN113265626B (zh) * 2020-02-14 2023-06-16 芝浦机械电子装置株式会社 成膜装置及成膜装置的水分去除方法
US11255508B2 (en) 2020-06-15 2022-02-22 Grote Industries, Inc. Deicing system for an automotive lamp
WO2021257296A1 (en) 2020-06-15 2021-12-23 Ruan Jiabiao Deicing system for. an automotive lamp

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004064453A1 (ja) * 2003-01-10 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. 発光素子及びその作製方法
JP2005050804A (ja) * 2003-07-15 2005-02-24 Matsushita Electric Ind Co Ltd プラズマディスプレイパネルの製造方法およびその製造装置
JP2005116253A (ja) * 2003-10-06 2005-04-28 Toshiba Matsushita Display Technology Co Ltd 表示装置の製造装置及び表示装置の製造方法
JP2005276704A (ja) * 2004-03-25 2005-10-06 Tdk Corp 有機ｅｌ素子の製造方法
JP2008069459A (ja) * 2000-10-26 2008-03-27 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法
JP2009076818A (ja) * 2007-09-25 2009-04-09 Mitsubishi Electric Corp 半導体デバイスの成膜用ホルダ及び成膜用装置
JP2009516072A (ja) * 2005-11-10 2009-04-16 イーストマン コダック カンパニー シールされた補充容器を用いた堆積システム
JP2011210562A (ja) * 2010-03-30 2011-10-20 Toppan Printing Co Ltd 有機ｅｌ素子の製造方法及び有機ｅｌパネルの製造方法
WO2012008275A1 (ja) * 2010-07-16 2012-01-19 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4425438B2 (ja) 1999-07-23 2010-03-03 株式会社半導体エネルギー研究所 Ｅｌ表示装置の作製方法
TW504941B (en) 1999-07-23 2002-10-01 Semiconductor Energy Lab Method of fabricating an EL display device, and apparatus for forming a thin film
US6770562B2 (en) 2000-10-26 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
WO2005006380A1 (ja) * 2003-07-15 2005-01-20 Matsushita Electric Industrial Co., Ltd. プラズマディスプレイパネルの製造方法およびその製造装置
JP5469950B2 (ja) * 2008-08-08 2014-04-16 株式会社半導体エネルギー研究所 発光装置の作製方法
EP2321443B1 (en) 2008-08-11 2015-07-22 Veeco Instruments Inc. Vacuum deposition sources having heated effusion orifices
KR101135519B1 (ko) 2009-09-25 2012-04-09 주식회사 선익시스템 증발챔버의 진공펌프 보호장치
JP2011246785A (ja) 2010-05-28 2011-12-08 Sumitomo Electric Ind Ltd 成膜装置および成膜方法
JP2012046780A (ja) 2010-08-25 2012-03-08 Tokyo Electron Ltd 蒸着処理装置および蒸着処理方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008069459A (ja) * 2000-10-26 2008-03-27 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法
WO2004064453A1 (ja) * 2003-01-10 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. 発光素子及びその作製方法
JP2005050804A (ja) * 2003-07-15 2005-02-24 Matsushita Electric Ind Co Ltd プラズマディスプレイパネルの製造方法およびその製造装置
JP2005116253A (ja) * 2003-10-06 2005-04-28 Toshiba Matsushita Display Technology Co Ltd 表示装置の製造装置及び表示装置の製造方法
JP2005276704A (ja) * 2004-03-25 2005-10-06 Tdk Corp 有機ｅｌ素子の製造方法
JP2009516072A (ja) * 2005-11-10 2009-04-16 イーストマン コダック カンパニー シールされた補充容器を用いた堆積システム
JP2009076818A (ja) * 2007-09-25 2009-04-09 Mitsubishi Electric Corp 半導体デバイスの成膜用ホルダ及び成膜用装置
JP2011210562A (ja) * 2010-03-30 2011-10-20 Toppan Printing Co Ltd 有機ｅｌ素子の製造方法及び有機ｅｌパネルの製造方法
WO2012008275A1 (ja) * 2010-07-16 2012-01-19 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180085020A (ko) 2015-11-30 2018-07-25 가부시키가이샤 스미카 분세키 센터 유기 전자 소자를 제조하는 제조 장치의 관리 방법
JP2017188362A (ja) * 2016-04-07 2017-10-12 住友化学株式会社 有機電子デバイスの製造方法
WO2019167121A1 (ja) * 2018-02-27 2019-09-06 シャープ株式会社 表示デバイスの製造方法及び製造装置
CN111771426A (zh) * 2018-02-27 2020-10-13 夏普株式会社 显示设备的制造方法以及制造装置
CN111771426B (zh) * 2018-02-27 2023-06-13 夏普株式会社 显示设备的制造方法以及制造装置

Also Published As

Publication number Publication date
KR102083032B1 (ko) 2020-02-28
US20130295275A1 (en) 2013-11-07
CN103382545A (zh) 2013-11-06
KR20130124225A (ko) 2013-11-13
US20170152594A1 (en) 2017-06-01
US9578718B2 (en) 2017-02-21

Similar Documents

Publication Publication Date Title
KR102083032B1 (ko) 발광 소자의 제작 방법
JP7154265B2 (ja) 発光素子の作製方法
JP7232868B2 (ja) 発光素子
JP7771234B2 (ja) 発光素子
JP6670366B2 (ja) 発光装置
JP6336723B2 (ja) 発光素子、発光装置、電子機器、および照明装置
KR102509231B1 (ko) 헤테로고리 화합물, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
WO2014157433A1 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
KR20150068411A (ko) 발광 장치, 전자 기기 및 조명 장치
KR20150126555A (ko) 화합물, 발광 소자, 발광 장치, 전자 기기 및 조명 장치
JP7157229B2 (ja) 発光素子、発光装置、電子機器及び照明装置
JP4391773B2 (ja) 感湿性有機材料の圧縮方法
JP2015081365A (ja) 成膜装置、成膜方法、成膜材料の除去方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160418

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160418

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170808

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20170927