JP2014192418A5 - - Google Patents

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Publication number
JP2014192418A5
JP2014192418A5 JP2013067983A JP2013067983A JP2014192418A5 JP 2014192418 A5 JP2014192418 A5 JP 2014192418A5 JP 2013067983 A JP2013067983 A JP 2013067983A JP 2013067983 A JP2013067983 A JP 2013067983A JP 2014192418 A5 JP2014192418 A5 JP 2014192418A5
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JP
Japan
Prior art keywords
film
gate electrode
semiconductor device
region
oxide semiconductor
Prior art date
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Application number
JP2013067983A
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English (en)
Japanese (ja)
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JP6111458B2 (ja
JP2014192418A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2013067983A external-priority patent/JP6111458B2/ja
Priority to JP2013067983A priority Critical patent/JP6111458B2/ja
Priority to TW103105341A priority patent/TWI643319B/zh
Priority to US14/218,420 priority patent/US9362312B2/en
Priority to KR20140032040A priority patent/KR20140118785A/ko
Priority to CN201410108581.0A priority patent/CN104078511B/zh
Publication of JP2014192418A publication Critical patent/JP2014192418A/ja
Publication of JP2014192418A5 publication Critical patent/JP2014192418A5/ja
Publication of JP6111458B2 publication Critical patent/JP6111458B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013067983A 2013-03-28 2013-03-28 半導体装置、表示装置および電子機器 Active JP6111458B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013067983A JP6111458B2 (ja) 2013-03-28 2013-03-28 半導体装置、表示装置および電子機器
TW103105341A TWI643319B (zh) 2013-03-28 2014-02-18 半導體裝置、顯示單元及電子設備
US14/218,420 US9362312B2 (en) 2013-03-28 2014-03-18 Semiconductor device, display unit, and electronic apparatus
KR20140032040A KR20140118785A (ko) 2013-03-28 2014-03-19 반도체 장치, 표시 장치 및 전자 기기
CN201410108581.0A CN104078511B (zh) 2013-03-28 2014-03-21 半导体器件、显示单元以及电子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013067983A JP6111458B2 (ja) 2013-03-28 2013-03-28 半導体装置、表示装置および電子機器

Publications (3)

Publication Number Publication Date
JP2014192418A JP2014192418A (ja) 2014-10-06
JP2014192418A5 true JP2014192418A5 (https=) 2015-08-06
JP6111458B2 JP6111458B2 (ja) 2017-04-12

Family

ID=51599672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013067983A Active JP6111458B2 (ja) 2013-03-28 2013-03-28 半導体装置、表示装置および電子機器

Country Status (5)

Country Link
US (1) US9362312B2 (https=)
JP (1) JP6111458B2 (https=)
KR (1) KR20140118785A (https=)
CN (1) CN104078511B (https=)
TW (1) TWI643319B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102064865B1 (ko) 2011-06-08 2020-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
JP6618779B2 (ja) * 2014-11-28 2019-12-11 株式会社半導体エネルギー研究所 半導体装置
KR102517127B1 (ko) * 2015-12-02 2023-04-03 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이를 포함하는 유기 발광 표시 장치
JP6726973B2 (ja) * 2016-02-01 2020-07-22 株式会社ジャパンディスプレイ 表示装置
CN106298954B (zh) * 2016-08-31 2020-02-04 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法
WO2018146580A1 (en) * 2017-02-10 2018-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2018147048A1 (ja) * 2017-02-13 2018-08-16 ソニー株式会社 表示装置、電子機器、および表示装置の製造方法
KR20190142344A (ko) * 2017-04-28 2019-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TW201901971A (zh) * 2017-05-12 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP7237822B2 (ja) * 2017-05-19 2023-03-13 株式会社半導体エネルギー研究所 半導体装置
US11152512B2 (en) 2017-05-19 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and method for manufacturing semiconductor device
JP7022592B2 (ja) * 2018-01-11 2022-02-18 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344790A (en) * 1993-08-31 1994-09-06 Sgs-Thomson Microelectronics, Inc. Making integrated circuit transistor having drain junction offset
JP5015471B2 (ja) 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
JP5049686B2 (ja) * 2006-07-26 2012-10-17 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
JP4989309B2 (ja) * 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
CN102612741B (zh) * 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
WO2011096275A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
US9023684B2 (en) * 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6019329B2 (ja) * 2011-03-31 2016-11-02 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US9111795B2 (en) * 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US9171840B2 (en) * 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130007902A (ko) * 2011-07-11 2013-01-21 삼성디스플레이 주식회사 유기발광표시장치 및 이의 제조방법
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device

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