CN104078511B - 半导体器件、显示单元以及电子装置 - Google Patents

半导体器件、显示单元以及电子装置 Download PDF

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Publication number
CN104078511B
CN104078511B CN201410108581.0A CN201410108581A CN104078511B CN 104078511 B CN104078511 B CN 104078511B CN 201410108581 A CN201410108581 A CN 201410108581A CN 104078511 B CN104078511 B CN 104078511B
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China
Prior art keywords
film
oxide semiconductor
display unit
transistor
gate electrode
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CN201410108581.0A
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English (en)
Chinese (zh)
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CN104078511A (zh
Inventor
诸沢成浩
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Magno Bolan Co ltd
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Joled Inc
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Publication of CN104078511A publication Critical patent/CN104078511A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201410108581.0A 2013-03-28 2014-03-21 半导体器件、显示单元以及电子装置 Active CN104078511B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013067983A JP6111458B2 (ja) 2013-03-28 2013-03-28 半導体装置、表示装置および電子機器
JP2013-067983 2013-03-28

Publications (2)

Publication Number Publication Date
CN104078511A CN104078511A (zh) 2014-10-01
CN104078511B true CN104078511B (zh) 2018-04-10

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CN201410108581.0A Active CN104078511B (zh) 2013-03-28 2014-03-21 半导体器件、显示单元以及电子装置

Country Status (5)

Country Link
US (1) US9362312B2 (https=)
JP (1) JP6111458B2 (https=)
KR (1) KR20140118785A (https=)
CN (1) CN104078511B (https=)
TW (1) TWI643319B (https=)

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Publication number Priority date Publication date Assignee Title
KR102064865B1 (ko) 2011-06-08 2020-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
JP6618779B2 (ja) * 2014-11-28 2019-12-11 株式会社半導体エネルギー研究所 半導体装置
KR102517127B1 (ko) * 2015-12-02 2023-04-03 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이를 포함하는 유기 발광 표시 장치
JP6726973B2 (ja) * 2016-02-01 2020-07-22 株式会社ジャパンディスプレイ 表示装置
CN106298954B (zh) * 2016-08-31 2020-02-04 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法
WO2018146580A1 (en) * 2017-02-10 2018-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2018147048A1 (ja) * 2017-02-13 2018-08-16 ソニー株式会社 表示装置、電子機器、および表示装置の製造方法
KR20190142344A (ko) * 2017-04-28 2019-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TW201901971A (zh) * 2017-05-12 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP7237822B2 (ja) * 2017-05-19 2023-03-13 株式会社半導体エネルギー研究所 半導体装置
US11152512B2 (en) 2017-05-19 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and method for manufacturing semiconductor device
JP7022592B2 (ja) * 2018-01-11 2022-02-18 株式会社ジャパンディスプレイ 表示装置

Citations (2)

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CN102315277A (zh) * 2010-07-05 2012-01-11 索尼公司 薄膜晶体管和显示装置
CN102738405A (zh) * 2011-03-31 2012-10-17 索尼公司 显示装置和电子设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344790A (en) * 1993-08-31 1994-09-06 Sgs-Thomson Microelectronics, Inc. Making integrated circuit transistor having drain junction offset
JP5015471B2 (ja) 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
JP5049686B2 (ja) * 2006-07-26 2012-10-17 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
JP4989309B2 (ja) * 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
CN102612741B (zh) * 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
WO2011096275A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9023684B2 (en) * 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9111795B2 (en) * 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US9171840B2 (en) * 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130007902A (ko) * 2011-07-11 2013-01-21 삼성디스플레이 주식회사 유기발광표시장치 및 이의 제조방법
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102315277A (zh) * 2010-07-05 2012-01-11 索尼公司 薄膜晶体管和显示装置
CN102738405A (zh) * 2011-03-31 2012-10-17 索尼公司 显示装置和电子设备

Also Published As

Publication number Publication date
TWI643319B (zh) 2018-12-01
JP6111458B2 (ja) 2017-04-12
JP2014192418A (ja) 2014-10-06
US9362312B2 (en) 2016-06-07
TW201438202A (zh) 2014-10-01
CN104078511A (zh) 2014-10-01
US20140291668A1 (en) 2014-10-02
KR20140118785A (ko) 2014-10-08

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