JP2014187192A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2014187192A JP2014187192A JP2013061114A JP2013061114A JP2014187192A JP 2014187192 A JP2014187192 A JP 2014187192A JP 2013061114 A JP2013061114 A JP 2013061114A JP 2013061114 A JP2013061114 A JP 2013061114A JP 2014187192 A JP2014187192 A JP 2014187192A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- spike
- semiconductor device
- plane
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000005245 sintering Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】実施形態に係る半導体装置は、第1導電形の第1半導体層と、前記第1半導体層の上に設けられた立方晶構造を有する第2半導体層と、前記第2半導体層の上に設けられた電極と、前記第2半導体層と前記電極との間に設けられた反応部と、を備える。前記第2半導体層は、(100)面に対して傾斜した上面を有する。前記反応部は、前記第2半導体層を構成する少なくとも1つの元素と、前記電極を構成する少なくとも1つの元素と、を含有し、前記第2半導体層側に延びる突起を有する。
【選択図】図1
Description
Claims (5)
- 第1導電形の第1半導体層と、
前記第1半導体層の上に設けられた立方晶構造を有する第2半導体層であって、(100)面に対して傾斜した上面を有する第2導電型の第2半導体層と、
前記上面の上に設けられた電極と、
前記第2半導体層と前記電極との間に設けられた反応部であって、前記第2半導体層を構成する少なくとも1つの元素と、前記電極を構成する少なくとも1つの元素と、を含有し、前記第2半導体層側に延びる突起を有する反応部と、
を備えた半導体装置。 - 前記電極は、アルミニウムを含む請求項1記載の半導体装置。
- 前記上面は、(100)面から[011]方向に傾斜した請求項1または2に記載の半導体装置。
- 前記上面の(100)面に対する傾斜角は、14度以上、38度以下である請求項1〜3のいずれか1つに記載の半導体装置。
- 前記反応部は、前記第2半導体層側に頂点を有する四角錐であって、
前記四角錐の側面は、前記第2半導体層の(111)面と平行である請求項1〜4のいずれか1つに記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013061114A JP2014187192A (ja) | 2013-03-22 | 2013-03-22 | 半導体装置 |
CN201310325316.3A CN104064585A (zh) | 2013-03-22 | 2013-07-30 | 半导体装置 |
US14/016,965 US9041143B2 (en) | 2013-03-22 | 2013-09-03 | Semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013061114A JP2014187192A (ja) | 2013-03-22 | 2013-03-22 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014187192A true JP2014187192A (ja) | 2014-10-02 |
Family
ID=51552219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013061114A Ceased JP2014187192A (ja) | 2013-03-22 | 2013-03-22 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9041143B2 (ja) |
JP (1) | JP2014187192A (ja) |
CN (1) | CN104064585A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021158296A (ja) * | 2020-03-30 | 2021-10-07 | 三菱電機株式会社 | 半導体装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017055015A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153477A (en) * | 1981-03-17 | 1982-09-22 | Nec Corp | Manufacture of semiconductor device |
JPS594014A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH01238013A (ja) * | 1988-03-18 | 1989-09-22 | Citizen Watch Co Ltd | 半導体集積回路の製造方法 |
JPH04206576A (ja) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | 半導体装置 |
JP2002289853A (ja) * | 2001-03-28 | 2002-10-04 | Rohm Co Ltd | 半導体装置およびその製法 |
JP2005012051A (ja) * | 2003-06-20 | 2005-01-13 | Toshiba Corp | 高耐圧半導体装置及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69430913D1 (de) * | 1994-07-25 | 2002-08-08 | Cons Ric Microelettronica | Verfahren zur lokalen Reduzierung der Ladungsträgerlebensdauer |
JPH11204804A (ja) | 1998-01-07 | 1999-07-30 | Fuji Electric Co Ltd | 半導体装置 |
JPH11274516A (ja) | 1998-03-18 | 1999-10-08 | Toshiba Corp | 電力用半導体装置 |
US20020195613A1 (en) * | 2001-04-02 | 2002-12-26 | International Rectifier Corp. | Low cost fast recovery diode and process of its manufacture |
US7259440B2 (en) * | 2004-03-30 | 2007-08-21 | Ixys Corporation | Fast switching diode with low leakage current |
EP1909326A4 (en) * | 2005-07-26 | 2009-05-06 | Panasonic Corp | SEMICONDUCTOR ELEMENT AND ELECTRICAL DEVICE |
JP2009141062A (ja) * | 2007-12-05 | 2009-06-25 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5216572B2 (ja) | 2008-12-25 | 2013-06-19 | 新電元工業株式会社 | ダイオード |
JP4500891B1 (ja) * | 2010-02-16 | 2010-07-14 | 株式会社三社電機製作所 | Pinダイオード |
KR101477358B1 (ko) * | 2012-12-20 | 2014-12-29 | 삼성전기주식회사 | 반도체 소자 및 그 제조 방법 |
-
2013
- 2013-03-22 JP JP2013061114A patent/JP2014187192A/ja not_active Ceased
- 2013-07-30 CN CN201310325316.3A patent/CN104064585A/zh active Pending
- 2013-09-03 US US14/016,965 patent/US9041143B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153477A (en) * | 1981-03-17 | 1982-09-22 | Nec Corp | Manufacture of semiconductor device |
JPS594014A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH01238013A (ja) * | 1988-03-18 | 1989-09-22 | Citizen Watch Co Ltd | 半導体集積回路の製造方法 |
JPH04206576A (ja) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | 半導体装置 |
JP2002289853A (ja) * | 2001-03-28 | 2002-10-04 | Rohm Co Ltd | 半導体装置およびその製法 |
JP2005012051A (ja) * | 2003-06-20 | 2005-01-13 | Toshiba Corp | 高耐圧半導体装置及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021158296A (ja) * | 2020-03-30 | 2021-10-07 | 三菱電機株式会社 | 半導体装置 |
JP7412246B2 (ja) | 2020-03-30 | 2024-01-12 | 三菱電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US9041143B2 (en) | 2015-05-26 |
US20140284755A1 (en) | 2014-09-25 |
CN104064585A (zh) | 2014-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7182594B2 (ja) | ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 | |
US8952449B2 (en) | Semiconductor device having both IGBT area and diode area | |
KR101620717B1 (ko) | 메사 섹션이 셀 트렌치 구조체들 사이에 형성된 절연 게이트 바이폴라 트랜지스터 및 그 제조 방법 | |
JP4746927B2 (ja) | 半導体装置の製造方法 | |
US9887190B2 (en) | Semiconductor device and method for manufacturing the same | |
JP6038391B2 (ja) | 半導体装置 | |
JP2008294214A (ja) | 半導体装置 | |
WO2015114747A1 (ja) | 電力用半導体装置 | |
US20140167143A1 (en) | Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device | |
JP5473397B2 (ja) | 半導体装置およびその製造方法 | |
JP2018006639A (ja) | 半導体装置及びその製造方法 | |
US9455148B2 (en) | Method for manufacturing semiconductor device | |
JP6463506B2 (ja) | 炭化珪素半導体装置 | |
US11183601B2 (en) | Semiconductor device with carrier lifetime control | |
JP5473398B2 (ja) | 半導体装置およびその製造方法 | |
US10388725B2 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP2015056643A (ja) | 半導体装置の製造方法 | |
JP2014187192A (ja) | 半導体装置 | |
JP2023154314A (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP6651801B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6178181B2 (ja) | 半導体装置及びその製造方法 | |
JP2012064796A (ja) | 半導体装置の製造方法および半導体装置 | |
JP2024007125A (ja) | 半導体素子および半導体素子の製造方法 | |
JP2020080439A (ja) | 半導体装置及びその製造方法 | |
JP2009152522A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150205 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150415 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150424 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150609 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160318 |
|
A045 | Written measure of dismissal of application [lapsed due to lack of payment] |
Free format text: JAPANESE INTERMEDIATE CODE: A045 Effective date: 20160722 |