JP2014187085A5 - - Google Patents
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- Publication number
- JP2014187085A5 JP2014187085A5 JP2013059337A JP2013059337A JP2014187085A5 JP 2014187085 A5 JP2014187085 A5 JP 2014187085A5 JP 2013059337 A JP2013059337 A JP 2013059337A JP 2013059337 A JP2013059337 A JP 2013059337A JP 2014187085 A5 JP2014187085 A5 JP 2014187085A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- semiconductor layer
- semiconductor
- gate
- threshold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013059337A JP2014187085A (ja) | 2013-03-22 | 2013-03-22 | 半導体装置 |
CN201310731532.8A CN104064593A (zh) | 2013-03-22 | 2013-12-26 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013059337A JP2014187085A (ja) | 2013-03-22 | 2013-03-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014187085A JP2014187085A (ja) | 2014-10-02 |
JP2014187085A5 true JP2014187085A5 (enrdf_load_stackoverflow) | 2015-03-26 |
Family
ID=51552223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013059337A Abandoned JP2014187085A (ja) | 2013-03-22 | 2013-03-22 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2014187085A (enrdf_load_stackoverflow) |
CN (1) | CN104064593A (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6646363B2 (ja) * | 2015-06-02 | 2020-02-14 | 株式会社アドバンテスト | 半導体装置 |
US10276681B2 (en) | 2016-02-29 | 2019-04-30 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
US10530360B2 (en) | 2016-02-29 | 2020-01-07 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
CN107393954B (zh) * | 2017-08-02 | 2019-11-01 | 电子科技大学 | 一种GaN异质结纵向场效应管 |
JP7021034B2 (ja) * | 2018-09-18 | 2022-02-16 | 株式会社東芝 | 半導体装置 |
CN109461655B (zh) * | 2018-09-21 | 2022-03-11 | 中国电子科技集团公司第五十五研究所 | 具有多栅结构的氮化物高电子迁移率晶体管制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007150282A (ja) * | 2005-11-02 | 2007-06-14 | Sharp Corp | 電界効果トランジスタ |
JP5597921B2 (ja) * | 2008-12-22 | 2014-10-01 | サンケン電気株式会社 | 半導体装置 |
JP5056883B2 (ja) * | 2010-03-26 | 2012-10-24 | サンケン電気株式会社 | 半導体装置 |
JP2012028705A (ja) * | 2010-07-27 | 2012-02-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
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2013
- 2013-03-22 JP JP2013059337A patent/JP2014187085A/ja not_active Abandoned
- 2013-12-26 CN CN201310731532.8A patent/CN104064593A/zh active Pending