JP2014175569A5 - - Google Patents
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- Publication number
- JP2014175569A5 JP2014175569A5 JP2013048719A JP2013048719A JP2014175569A5 JP 2014175569 A5 JP2014175569 A5 JP 2014175569A5 JP 2013048719 A JP2013048719 A JP 2013048719A JP 2013048719 A JP2013048719 A JP 2013048719A JP 2014175569 A5 JP2014175569 A5 JP 2014175569A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type semiconductor
- less
- semiconductor device
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 27
- 239000000463 material Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013048719A JP6127596B2 (ja) | 2013-03-12 | 2013-03-12 | 半導体装置およびその製造方法 |
| US14/175,893 US9269778B2 (en) | 2013-03-12 | 2014-02-07 | Semiconductor apparatus including N-type semiconductor layer |
| CN201410046657.1A CN104051507B (zh) | 2013-03-12 | 2014-02-10 | 半导体装置及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013048719A JP6127596B2 (ja) | 2013-03-12 | 2013-03-12 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014175569A JP2014175569A (ja) | 2014-09-22 |
| JP2014175569A5 true JP2014175569A5 (cg-RX-API-DMAC7.html) | 2015-05-28 |
| JP6127596B2 JP6127596B2 (ja) | 2017-05-17 |
Family
ID=51504135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013048719A Active JP6127596B2 (ja) | 2013-03-12 | 2013-03-12 | 半導体装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9269778B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6127596B2 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104051507B (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6175009B2 (ja) * | 2014-02-06 | 2017-08-02 | 住友化学株式会社 | 高耐圧窒化ガリウム系半導体デバイス及びその製造方法 |
| JP6540547B2 (ja) * | 2016-03-01 | 2019-07-10 | 豊田合成株式会社 | Ｍｐｓダイオード |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
| JP2006193348A (ja) * | 2005-01-11 | 2006-07-27 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体基板およびその製造方法 |
| JP2010141037A (ja) * | 2008-12-10 | 2010-06-24 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体電子デバイス、窒化ガリウム系半導体電子デバイスを作製する方法、エピタキシャル基板、及びエピタキシャル基板を作製する方法 |
| JP2011035066A (ja) | 2009-07-30 | 2011-02-17 | Sumitomo Electric Ind Ltd | 窒化物半導体素子、及び窒化物半導体素子を作製する方法 |
| JP5319623B2 (ja) * | 2010-08-06 | 2013-10-16 | 株式会社東芝 | 半導体発光素子 |
| JP2012197218A (ja) * | 2011-03-07 | 2012-10-18 | Mitsubishi Chemicals Corp | 半導体バルク結晶および半導体バルク結晶の製造方法 |
-
2013
- 2013-03-12 JP JP2013048719A patent/JP6127596B2/ja active Active
-
2014
- 2014-02-07 US US14/175,893 patent/US9269778B2/en active Active
- 2014-02-10 CN CN201410046657.1A patent/CN104051507B/zh active Active
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