JP2014175521A5 - - Google Patents

Download PDF

Info

Publication number
JP2014175521A5
JP2014175521A5 JP2013047900A JP2013047900A JP2014175521A5 JP 2014175521 A5 JP2014175521 A5 JP 2014175521A5 JP 2013047900 A JP2013047900 A JP 2013047900A JP 2013047900 A JP2013047900 A JP 2013047900A JP 2014175521 A5 JP2014175521 A5 JP 2014175521A5
Authority
JP
Japan
Prior art keywords
gas
flow rate
etching
semiconductor region
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013047900A
Other languages
English (en)
Japanese (ja)
Other versions
JP6059048B2 (ja
JP2014175521A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013047900A priority Critical patent/JP6059048B2/ja
Priority claimed from JP2013047900A external-priority patent/JP6059048B2/ja
Priority to KR1020140025525A priority patent/KR102169565B1/ko
Publication of JP2014175521A publication Critical patent/JP2014175521A/ja
Publication of JP2014175521A5 publication Critical patent/JP2014175521A5/ja
Application granted granted Critical
Publication of JP6059048B2 publication Critical patent/JP6059048B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013047900A 2013-03-11 2013-03-11 プラズマエッチング方法 Active JP6059048B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013047900A JP6059048B2 (ja) 2013-03-11 2013-03-11 プラズマエッチング方法
KR1020140025525A KR102169565B1 (ko) 2013-03-11 2014-03-04 플라즈마 에칭 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013047900A JP6059048B2 (ja) 2013-03-11 2013-03-11 プラズマエッチング方法

Publications (3)

Publication Number Publication Date
JP2014175521A JP2014175521A (ja) 2014-09-22
JP2014175521A5 true JP2014175521A5 (enrdf_load_stackoverflow) 2016-01-21
JP6059048B2 JP6059048B2 (ja) 2017-01-11

Family

ID=51696448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013047900A Active JP6059048B2 (ja) 2013-03-11 2013-03-11 プラズマエッチング方法

Country Status (2)

Country Link
JP (1) JP6059048B2 (enrdf_load_stackoverflow)
KR (1) KR102169565B1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6494424B2 (ja) * 2015-05-29 2019-04-03 東京エレクトロン株式会社 エッチング方法
JP6529357B2 (ja) * 2015-06-23 2019-06-12 東京エレクトロン株式会社 エッチング方法
JP7190940B2 (ja) * 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3803516B2 (ja) * 1999-09-22 2006-08-02 株式会社東芝 ドライエッチング方法及び半導体装置の製造方法
JP2003151960A (ja) * 2001-11-12 2003-05-23 Toyota Motor Corp トレンチエッチング方法
JP2005276931A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体装置およびその製造方法
JP2006339490A (ja) * 2005-06-03 2006-12-14 Toshiba Corp 半導体装置の製造方法
JP2007019191A (ja) * 2005-07-06 2007-01-25 Fujitsu Ltd 半導体装置とその製造方法
JP2008124399A (ja) * 2006-11-15 2008-05-29 Toshiba Corp 半導体装置の製造方法
JP4816478B2 (ja) * 2007-02-02 2011-11-16 東京エレクトロン株式会社 エッチング方法及び記憶媒体
JP2009021489A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置およびその製造方法
CN101903989B (zh) * 2007-12-21 2013-04-17 朗姆研究公司 硅结构的制造和带有形貌控制的深硅蚀刻
JP5226296B2 (ja) * 2007-12-27 2013-07-03 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
JP2012174854A (ja) 2011-02-21 2012-09-10 Tokyo Electron Ltd 半導体素子の製造方法

Similar Documents

Publication Publication Date Title
JP2014112668A5 (enrdf_load_stackoverflow)
JP2012119699A5 (enrdf_load_stackoverflow)
JP2017045869A5 (enrdf_load_stackoverflow)
JP2017208387A5 (enrdf_load_stackoverflow)
JP2017228580A5 (enrdf_load_stackoverflow)
JP2014017406A5 (enrdf_load_stackoverflow)
JP2015154047A5 (enrdf_load_stackoverflow)
TW201614718A (en) Substrate processing system and substrate processing method
TW201614811A (en) Nanocrystalline diamond carbon film for 3D NAND hardmask application
JP2017103388A5 (enrdf_load_stackoverflow)
JP2016192483A5 (enrdf_load_stackoverflow)
JP2012089854A5 (enrdf_load_stackoverflow)
WO2016138218A8 (en) Methods and apparatus for using alkyl amines for the selective removal of metal nitride
SG10201805798UA (en) Etching method and residue removal method
JP2011176095A5 (enrdf_load_stackoverflow)
JP2016066792A5 (enrdf_load_stackoverflow)
JP2018166142A5 (enrdf_load_stackoverflow)
JP2012204668A5 (enrdf_load_stackoverflow)
JP2015513609A5 (enrdf_load_stackoverflow)
JP2007258426A5 (enrdf_load_stackoverflow)
JP2019508883A5 (enrdf_load_stackoverflow)
JP2016131210A5 (enrdf_load_stackoverflow)
JP2010245101A5 (enrdf_load_stackoverflow)
JP2013510442A5 (enrdf_load_stackoverflow)
JP2017011127A5 (enrdf_load_stackoverflow)