JP2014175360A5 - - Google Patents
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- Publication number
- JP2014175360A5 JP2014175360A5 JP2013044499A JP2013044499A JP2014175360A5 JP 2014175360 A5 JP2014175360 A5 JP 2014175360A5 JP 2013044499 A JP2013044499 A JP 2013044499A JP 2013044499 A JP2013044499 A JP 2013044499A JP 2014175360 A5 JP2014175360 A5 JP 2014175360A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide
- manufacturing
- insulating film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 230000001678 irradiating effect Effects 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013044499A JP6087668B2 (ja) | 2013-03-06 | 2013-03-06 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013044499A JP6087668B2 (ja) | 2013-03-06 | 2013-03-06 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014175360A JP2014175360A (ja) | 2014-09-22 |
| JP2014175360A5 true JP2014175360A5 (enExample) | 2016-02-18 |
| JP6087668B2 JP6087668B2 (ja) | 2017-03-01 |
Family
ID=51696331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013044499A Expired - Fee Related JP6087668B2 (ja) | 2013-03-06 | 2013-03-06 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6087668B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020245925A1 (ja) * | 2019-06-04 | 2020-12-10 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法、ならびに表示装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012014885A1 (ja) * | 2010-07-26 | 2012-02-02 | 日産化学工業株式会社 | アモルファス金属酸化物半導体層形成用前駆体組成物、アモルファス金属酸化物半導体層及びその製造方法並びに半導体デバイス |
| WO2012014952A1 (en) * | 2010-07-27 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP5671911B2 (ja) * | 2010-09-27 | 2015-02-18 | 凸版印刷株式会社 | 薄膜トランジスタアレイ及び画像表示装置並びに薄膜トランジスタアレイの製造方法 |
| TWI565067B (zh) * | 2011-07-08 | 2017-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
-
2013
- 2013-03-06 JP JP2013044499A patent/JP6087668B2/ja not_active Expired - Fee Related
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