JP6087668B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP6087668B2
JP6087668B2 JP2013044499A JP2013044499A JP6087668B2 JP 6087668 B2 JP6087668 B2 JP 6087668B2 JP 2013044499 A JP2013044499 A JP 2013044499A JP 2013044499 A JP2013044499 A JP 2013044499A JP 6087668 B2 JP6087668 B2 JP 6087668B2
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oxide semiconductor
oxide
insulating film
transistor
substrate
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Expired - Fee Related
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JP2013044499A
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Japanese (ja)
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JP2014175360A (ja
JP2014175360A5 (enExample
Inventor
秋元　健吾
健吾 秋元
寛暢 高橋
寛暢 高橋
肇 徳永
肇 徳永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2013044499A 2013-03-06 2013-03-06 半導体装置の作製方法 Expired - Fee Related JP6087668B2 (ja)

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JP2013044499A JP6087668B2 (ja) 2013-03-06 2013-03-06 半導体装置の作製方法

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JP2013044499A JP6087668B2 (ja) 2013-03-06 2013-03-06 半導体装置の作製方法

Publications (3)

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JP2014175360A JP2014175360A (ja) 2014-09-22
JP2014175360A5 JP2014175360A5 (enExample) 2016-02-18
JP6087668B2 true JP6087668B2 (ja) 2017-03-01

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JP2013044499A Expired - Fee Related JP6087668B2 (ja) 2013-03-06 2013-03-06 半導体装置の作製方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020245925A1 (ja) * 2019-06-04 2020-12-10 堺ディスプレイプロダクト株式会社 薄膜トランジスタおよびその製造方法、ならびに表示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012014885A1 (ja) * 2010-07-26 2012-02-02 日産化学工業株式会社 アモルファス金属酸化物半導体層形成用前駆体組成物、アモルファス金属酸化物半導体層及びその製造方法並びに半導体デバイス
WO2012014952A1 (en) * 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5671911B2 (ja) * 2010-09-27 2015-02-18 凸版印刷株式会社 薄膜トランジスタアレイ及び画像表示装置並びに薄膜トランジスタアレイの製造方法
TWI565067B (zh) * 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法

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JP2014175360A (ja) 2014-09-22

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