JP2014165500A - バッチ式基板処理装置 - Google Patents

バッチ式基板処理装置 Download PDF

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Publication number
JP2014165500A
JP2014165500A JP2014033926A JP2014033926A JP2014165500A JP 2014165500 A JP2014165500 A JP 2014165500A JP 2014033926 A JP2014033926 A JP 2014033926A JP 2014033926 A JP2014033926 A JP 2014033926A JP 2014165500 A JP2014165500 A JP 2014165500A
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JP
Japan
Prior art keywords
substrate processing
processing unit
pair
processing apparatus
batch type
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Pending
Application number
JP2014033926A
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English (en)
Japanese (ja)
Inventor
Byung Il Lee
ビョン イル リ
Tae Wan Lee
テ ワン リ
Han Kil Yoo
ハン キル ユ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tera Semicon Corp
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Tera Semicon Corp
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50894567&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2014165500(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tera Semicon Corp filed Critical Tera Semicon Corp
Publication of JP2014165500A publication Critical patent/JP2014165500A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2014033926A 2013-02-26 2014-02-25 バッチ式基板処理装置 Pending JP2014165500A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130020431A KR101396601B1 (ko) 2013-02-26 2013-02-26 배치식 기판처리 장치
KR10-2013-0020431 2013-02-26

Publications (1)

Publication Number Publication Date
JP2014165500A true JP2014165500A (ja) 2014-09-08

Family

ID=50894567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014033926A Pending JP2014165500A (ja) 2013-02-26 2014-02-25 バッチ式基板処理装置

Country Status (4)

Country Link
JP (1) JP2014165500A (zh)
KR (1) KR101396601B1 (zh)
CN (1) CN104005005A (zh)
TW (1) TWI602937B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017120883A (ja) * 2015-12-28 2017-07-06 ユ−ジーン テクノロジー カンパニー．リミテッド 基板処理装置
WO2017138087A1 (ja) * 2016-02-09 2017-08-17 株式会社日立国際電気 基板処理装置および半導体装置の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101659560B1 (ko) * 2014-08-26 2016-09-23 주식회사 테라세미콘 기판처리 장치의 반응기
JP6578243B2 (ja) * 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
KR101826814B1 (ko) * 2015-09-23 2018-02-08 주식회사 테라세미콘 기판처리 장치의 반응기
CN108203815A (zh) * 2016-12-19 2018-06-26 北京北方华创微电子装备有限公司 工艺腔室及半导体加工设备

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322523A (ja) * 1989-06-20 1991-01-30 Fujitsu Ltd 気相成長装置
JPH04155828A (ja) * 1990-10-18 1992-05-28 Tokyo Electron Sagami Ltd 熱処理装置
JP2000294511A (ja) * 1999-04-09 2000-10-20 Ftl:Kk 半導体装置の製造装置
JP2001210631A (ja) * 2000-01-28 2001-08-03 Tokyo Electron Ltd 熱処理装置
JP2001291708A (ja) * 2000-03-17 2001-10-19 Samsung Electronics Co Ltd スリット型工程ガス引込み部と多孔構造の廃ガス排出部とを含む工程チューブ及び半導体素子の製造装置
JP2002222806A (ja) * 2001-01-26 2002-08-09 Ebara Corp 基板処理装置
JP2003324045A (ja) * 2002-02-28 2003-11-14 Tokyo Electron Ltd 熱処理装置
JP2004014543A (ja) * 2002-06-03 2004-01-15 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
JP2005158939A (ja) * 2003-11-25 2005-06-16 Kyoshin Engineering:Kk 分割ヒーター付きアニール装置及び方法
JP2006080256A (ja) * 2004-09-09 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
JP2006080098A (ja) * 2002-09-20 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2007109711A (ja) * 2005-10-11 2007-04-26 Tokyo Electron Ltd 処理装置、処理方法及び記憶媒体
JP2007194584A (ja) * 2006-01-16 2007-08-02 Tera Semicon Corp バッチ式反応チャンバーのヒーティング方法及びそのヒーティングシステム
JP2008172205A (ja) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および反応容器
JP2009055001A (ja) * 2007-07-10 2009-03-12 Applied Materials Inc 垂直反応器におけるバッチ処理のための方法および装置
JP2009124005A (ja) * 2007-11-16 2009-06-04 Sukegawa Electric Co Ltd 均熱高速昇降炉
JP2009218600A (ja) * 2008-01-31 2009-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2009536460A (ja) * 2006-05-05 2009-10-08 アプライド マテリアルズ インコーポレイテッド 拡散プレートおよび噴射アセンブリを具備するバッチ処理チャンバ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060082142A (ko) * 2005-01-10 2006-07-18 국제엘렉트릭코리아 주식회사 원자층 증착 설비
JP2007201357A (ja) * 2006-01-30 2007-08-09 Tokyo Electron Ltd 成膜装置及び成膜方法
JP5233562B2 (ja) * 2008-10-04 2013-07-10 東京エレクトロン株式会社 成膜方法及び成膜装置
KR101141069B1 (ko) * 2010-01-26 2012-05-10 주식회사 엔씨디 배치형 원자층 증착 장치
JP2012099765A (ja) * 2010-11-05 2012-05-24 Hitachi Kokusai Electric Inc 基板処理装置
WO2012077680A1 (ja) * 2010-12-07 2012-06-14 株式会社日立国際電気 基板の製造方法、半導体デバイスの製造方法及び基板処理装置

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322523A (ja) * 1989-06-20 1991-01-30 Fujitsu Ltd 気相成長装置
JPH04155828A (ja) * 1990-10-18 1992-05-28 Tokyo Electron Sagami Ltd 熱処理装置
JP2000294511A (ja) * 1999-04-09 2000-10-20 Ftl:Kk 半導体装置の製造装置
JP2001210631A (ja) * 2000-01-28 2001-08-03 Tokyo Electron Ltd 熱処理装置
JP2001291708A (ja) * 2000-03-17 2001-10-19 Samsung Electronics Co Ltd スリット型工程ガス引込み部と多孔構造の廃ガス排出部とを含む工程チューブ及び半導体素子の製造装置
JP2002222806A (ja) * 2001-01-26 2002-08-09 Ebara Corp 基板処理装置
JP2003324045A (ja) * 2002-02-28 2003-11-14 Tokyo Electron Ltd 熱処理装置
JP2004014543A (ja) * 2002-06-03 2004-01-15 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
JP2006080098A (ja) * 2002-09-20 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2005158939A (ja) * 2003-11-25 2005-06-16 Kyoshin Engineering:Kk 分割ヒーター付きアニール装置及び方法
JP2006080256A (ja) * 2004-09-09 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
JP2007109711A (ja) * 2005-10-11 2007-04-26 Tokyo Electron Ltd 処理装置、処理方法及び記憶媒体
JP2007194584A (ja) * 2006-01-16 2007-08-02 Tera Semicon Corp バッチ式反応チャンバーのヒーティング方法及びそのヒーティングシステム
JP2009536460A (ja) * 2006-05-05 2009-10-08 アプライド マテリアルズ インコーポレイテッド 拡散プレートおよび噴射アセンブリを具備するバッチ処理チャンバ
JP2008172205A (ja) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および反応容器
JP2009055001A (ja) * 2007-07-10 2009-03-12 Applied Materials Inc 垂直反応器におけるバッチ処理のための方法および装置
JP2009124005A (ja) * 2007-11-16 2009-06-04 Sukegawa Electric Co Ltd 均熱高速昇降炉
JP2009218600A (ja) * 2008-01-31 2009-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017120883A (ja) * 2015-12-28 2017-07-06 ユ−ジーン テクノロジー カンパニー．リミテッド 基板処理装置
US10364494B2 (en) 2015-12-28 2019-07-30 Eugene Technology Co., Ltd. Substrate processing apparatus
WO2017138087A1 (ja) * 2016-02-09 2017-08-17 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JPWO2017138087A1 (ja) * 2016-02-09 2018-11-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置および半導体装置の製造方法

Also Published As

Publication number Publication date
TW201441395A (zh) 2014-11-01
TWI602937B (zh) 2017-10-21
KR101396601B1 (ko) 2014-05-20
CN104005005A (zh) 2014-08-27

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