KR101396601B1 - 배치식 기판처리 장치 - Google Patents

배치식 기판처리 장치 Download PDF

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Publication number
KR101396601B1
KR101396601B1 KR1020130020431A KR20130020431A KR101396601B1 KR 101396601 B1 KR101396601 B1 KR 101396601B1 KR 1020130020431 A KR1020130020431 A KR 1020130020431A KR 20130020431 A KR20130020431 A KR 20130020431A KR 101396601 B1 KR101396601 B1 KR 101396601B1
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KR
South Korea
Prior art keywords
substrate processing
substrate
heater
processing unit
pair
Prior art date
Application number
KR1020130020431A
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English (en)
Korean (ko)
Inventor
이병일
이태완
유한길
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50894567&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101396601(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to KR1020130020431A priority Critical patent/KR101396601B1/ko
Priority to TW103104743A priority patent/TWI602937B/zh
Priority to JP2014033926A priority patent/JP2014165500A/ja
Priority to CN201410067222.5A priority patent/CN104005005A/zh
Application granted granted Critical
Publication of KR101396601B1 publication Critical patent/KR101396601B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020130020431A 2013-02-26 2013-02-26 배치식 기판처리 장치 KR101396601B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020130020431A KR101396601B1 (ko) 2013-02-26 2013-02-26 배치식 기판처리 장치
TW103104743A TWI602937B (zh) 2013-02-26 2014-02-13 批次式基板處理裝置
JP2014033926A JP2014165500A (ja) 2013-02-26 2014-02-25 バッチ式基板処理装置
CN201410067222.5A CN104005005A (zh) 2013-02-26 2014-02-26 批处理式基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130020431A KR101396601B1 (ko) 2013-02-26 2013-02-26 배치식 기판처리 장치

Publications (1)

Publication Number Publication Date
KR101396601B1 true KR101396601B1 (ko) 2014-05-20

Family

ID=50894567

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130020431A KR101396601B1 (ko) 2013-02-26 2013-02-26 배치식 기판처리 장치

Country Status (4)

Country Link
JP (1) JP2014165500A (zh)
KR (1) KR101396601B1 (zh)
CN (1) CN104005005A (zh)
TW (1) TWI602937B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160024660A (ko) * 2014-08-26 2016-03-07 주식회사 테라세미콘 기판처리 장치의 반응기
KR101826814B1 (ko) * 2015-09-23 2018-02-08 주식회사 테라세미콘 기판처리 장치의 반응기
KR20180050708A (ko) * 2016-02-09 2018-05-15 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6578243B2 (ja) * 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
KR101744201B1 (ko) 2015-12-28 2017-06-12 주식회사 유진테크 기판 처리 장치
CN108203815A (zh) * 2016-12-19 2018-06-26 北京北方华创微电子装备有限公司 工艺腔室及半导体加工设备

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KR20010091670A (ko) * 2000-03-17 2001-10-23 윤종용 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
KR20060082142A (ko) * 2005-01-10 2006-07-18 국제엘렉트릭코리아 주식회사 원자층 증착 설비
KR20100038274A (ko) * 2008-10-04 2010-04-14 도쿄엘렉트론가부시키가이샤 종형 뱃치 ｃｖｄ 장치, 종형 뱃치 ｃｖｄ 장치에 있어서의 성막 방법 및 컴퓨터로 판독 가능한 매체

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JPH0322523A (ja) * 1989-06-20 1991-01-30 Fujitsu Ltd 気相成長装置
JP3307924B2 (ja) * 1990-10-18 2002-07-29 東京エレクトロン株式会社 熱処理装置
JP2000294511A (ja) * 1999-04-09 2000-10-20 Ftl:Kk 半導体装置の製造装置
JP3479020B2 (ja) * 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置
JP2002222806A (ja) * 2001-01-26 2002-08-09 Ebara Corp 基板処理装置
JP3912208B2 (ja) * 2002-02-28 2007-05-09 東京エレクトロン株式会社 熱処理装置
JP2004014543A (ja) * 2002-06-03 2004-01-15 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
JP2006080098A (ja) * 2002-09-20 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2005158939A (ja) * 2003-11-25 2005-06-16 Kyoshin Engineering:Kk 分割ヒーター付きアニール装置及び方法
JP2006080256A (ja) * 2004-09-09 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
JP4426518B2 (ja) * 2005-10-11 2010-03-03 東京エレクトロン株式会社 処理装置
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
JP4502987B2 (ja) * 2006-01-16 2010-07-14 株式会社テラセミコン バッチ式反応チャンバーのヒーティングシステム
JP2007201357A (ja) * 2006-01-30 2007-08-09 Tokyo Electron Ltd 成膜装置及び成膜方法
JP2008172205A (ja) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および反応容器
US20090017637A1 (en) * 2007-07-10 2009-01-15 Yi-Chiau Huang Method and apparatus for batch processing in a vertical reactor
JP5317462B2 (ja) * 2007-11-16 2013-10-16 助川電気工業株式会社 均熱高速昇降炉
JP4560575B2 (ja) * 2008-01-31 2010-10-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR101141069B1 (ko) * 2010-01-26 2012-05-10 주식회사 엔씨디 배치형 원자층 증착 장치
JP2012099765A (ja) * 2010-11-05 2012-05-24 Hitachi Kokusai Electric Inc 基板処理装置
TW201245514A (en) * 2010-12-07 2012-11-16 Hitachi Int Electric Inc Method of manufacturing substrate, method of manufacturing semiconductor device, and substrate processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091670A (ko) * 2000-03-17 2001-10-23 윤종용 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
KR20060082142A (ko) * 2005-01-10 2006-07-18 국제엘렉트릭코리아 주식회사 원자층 증착 설비
KR20100038274A (ko) * 2008-10-04 2010-04-14 도쿄엘렉트론가부시키가이샤 종형 뱃치 ｃｖｄ 장치, 종형 뱃치 ｃｖｄ 장치에 있어서의 성막 방법 및 컴퓨터로 판독 가능한 매체

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160024660A (ko) * 2014-08-26 2016-03-07 주식회사 테라세미콘 기판처리 장치의 반응기
CN105386009A (zh) * 2014-08-26 2016-03-09 泰拉半导体株式会社 基板处理装置的反应器
KR101659560B1 (ko) * 2014-08-26 2016-09-23 주식회사 테라세미콘 기판처리 장치의 반응기
KR101826814B1 (ko) * 2015-09-23 2018-02-08 주식회사 테라세미콘 기판처리 장치의 반응기
KR20180050708A (ko) * 2016-02-09 2018-05-15 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
KR102043876B1 (ko) 2016-02-09 2019-11-12 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
JP2014165500A (ja) 2014-09-08
TW201441395A (zh) 2014-11-01
CN104005005A (zh) 2014-08-27
TWI602937B (zh) 2017-10-21

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