JP2014165174A - 集束イオン・ビームの低kV強化 - Google Patents
集束イオン・ビームの低kV強化 Download PDFInfo
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/07—Eliminating deleterious effects due to thermal effects or electric or magnetic fields
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/026—Eliminating deleterious effects due to thermal effects, electric or magnetic field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/248—Components associated with high voltage supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
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- H—ELECTRICITY
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- H01J2237/04—Means for controlling the discharge
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- H01J2237/0475—Changing particle velocity decelerating
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- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
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Abstract
【解決手段】集束イオン・ビーム・カラム101の中間部に、レンズ系104、105および走査八極子135を備えた、負の高電圧にバイアス可能なブースタ管120を配置し、最終的なビーム・エネルギーよりも高いエネルギーでビームが移動することを可能にする。ブースタ管120の電圧は、負の高電圧および接地の二つのモードで動作可能であり、走査八極子135の電圧はブースタ管120の電圧と関係づけられる。
【選択図】図2
Description
偏向光学部品は磁気光学部品または静電光学部品とすることができる。集束イオン・ビーム・システムではこの偏向光学部品が一般に静電光学部品である。集束イオン・ビーム用の静電偏向器は一般に八極子(octupole)である。すなわち、それぞれの偏向器が、円周に沿って配置された8つのプレートを含む。これらの8つのプレートに異なる電圧を印加して、光軸から遠ざかるさまざまな方向にビームを偏向させる。
102 電子源
104 レンズ系
105 レンズ系
106 ターゲット
120 ブースタ管
130 ビーム画定絞り(BDA)
Claims (13)
- ターゲットに使用する1次イオン・ビームの源と、
負の高電圧にバイアスされたブースタ管を有し、前記ブースタ管が、第1のレンズの電極および第2のレンズの電極ならびに1つまたは複数の静電走査偏向器を備え、前記偏向器の電極が前記ブースタ管バイアス負電圧に関係づけられた集束イオン・ビーム・カラムと
を備える装置。 - 前記集束イオン・ビーム・カラムが、前記1次イオン・ビームの源と前記ブースタ管の間に少なくとも1つのレンズを含む、請求項1に記載の装置。
- 前記集束イオン・ビーム・カラムが、前記ブースタ管と前記ターゲットの間に少なくとも1つのレンズを含む、請求項1または2に記載の装置。
- 前記ブースタ管が、ビーム電流測定用のファラデー・カップを含む、請求項1から3のいずれか一項に記載の装置。
- 前記ブースタ管が、2つのモード、すなわち接地することができる第1のモードと、前記ブースタ管が負の高電圧にバイアスされた第2のモードとを有する、請求項1から4のいずれか一項に記載の装置。
- 前記負の高電圧が5kVよりも小さい、請求項5に記載の装置。
- 前記負の高電圧が1kVから3kVの間である、請求項6に記載の装置。
- ビーム画定絞り、カラム分離弁およびビーム・ブランカをさらに備える、請求項1から7のいずれか一項に記載の装置。
- 集束イオン・ビームを使用してターゲットを画像化および処理する方法であって、
イオン・カラムに沿ってターゲットに向かって移動するイオンを含む集束イオン・ビームを生成するステップと、
前記集束イオン・ビームを導いて、少なくとも1つのレンズ、ビーム画定絞りおよび負の高電圧にバイアスされた走査八極子を通過させるステップと、
前記集束イオン・ビームによって前記ターゲットにスポット・サイズを生み出すステップであり、前記負の高電圧によって前記スポット・サイズが小さくなるステップと
を含む方法。 - 前記負の高電圧が5kVよりも小さい、請求項9に記載の方法。
- 前記負の高電圧が1kVから3kVの間である、請求項10に記載の方法。
- 前記ターゲットを画像化するために前記ブースタ管内でファラデー・カップを使用することをさらに含む、請求項9から11のいずれか一項に記載の方法。
- 前記走査八極子が前記集束イオン・ビームを偏向させる、請求項9から12のいずれか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/779,142 US8933414B2 (en) | 2013-02-27 | 2013-02-27 | Focused ion beam low kV enhancement |
US13/779,142 | 2013-02-27 |
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JP2014165174A true JP2014165174A (ja) | 2014-09-08 |
JP2014165174A5 JP2014165174A5 (ja) | 2017-04-27 |
JP6341680B2 JP6341680B2 (ja) | 2018-06-13 |
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JP2014023442A Active JP6341680B2 (ja) | 2013-02-27 | 2014-02-10 | 集束イオン・ビームの低kV強化 |
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US (3) | US8933414B2 (ja) |
EP (1) | EP2772930B1 (ja) |
JP (1) | JP6341680B2 (ja) |
CN (1) | CN104008943B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111584335A (zh) * | 2019-02-15 | 2020-08-25 | 日本株式会社日立高新技术科学 | 复合带电粒子束装置和控制方法 |
JP2021068529A (ja) * | 2019-10-18 | 2021-04-30 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、複合荷電粒子ビーム装置、及び荷電粒子ビーム装置の制御方法 |
JP2021068530A (ja) * | 2019-10-18 | 2021-04-30 | 株式会社日立ハイテクサイエンス | 集束イオンビーム装置、及び集束イオンビーム装置の制御方法 |
Families Citing this family (7)
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US8933414B2 (en) * | 2013-02-27 | 2015-01-13 | Fei Company | Focused ion beam low kV enhancement |
US9666407B2 (en) * | 2015-02-25 | 2017-05-30 | Industry-University Cooperation Foundation Sunmoon University | Electrostatic quadrupole deflector for microcolumn |
JP2019003863A (ja) * | 2017-06-16 | 2019-01-10 | 株式会社島津製作所 | 電子ビーム装置、ならびに、これを備えるx線発生装置および走査電子顕微鏡 |
CN109633359B (zh) * | 2019-01-10 | 2021-05-28 | 许继电源有限公司 | 一种三母线中单母线接地绝缘监测方法和监测装置 |
CN112713070B (zh) * | 2019-10-25 | 2022-10-18 | 中国电子科技集团公司第四十八研究所 | 一种真空机械扫描装置 |
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US11887810B2 (en) * | 2022-04-20 | 2024-01-30 | Applied Materials Israel Ltd. | Reduced charging by low negative voltage in FIB systems |
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2013
- 2013-02-27 US US13/779,142 patent/US8933414B2/en active Active
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2014
- 2014-02-10 JP JP2014023442A patent/JP6341680B2/ja active Active
- 2014-02-25 EP EP14156445.0A patent/EP2772930B1/en active Active
- 2014-02-26 CN CN201410066714.2A patent/CN104008943B/zh active Active
- 2014-12-09 US US14/565,051 patent/US9087672B2/en active Active
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2015
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111584335A (zh) * | 2019-02-15 | 2020-08-25 | 日本株式会社日立高新技术科学 | 复合带电粒子束装置和控制方法 |
JP2020136002A (ja) * | 2019-02-15 | 2020-08-31 | 株式会社日立ハイテクサイエンス | 複合荷電粒子ビーム装置、及び制御方法 |
JP7154593B2 (ja) | 2019-02-15 | 2022-10-18 | 株式会社日立ハイテクサイエンス | 複合荷電粒子ビーム装置、及び制御方法 |
CN111584335B (zh) * | 2019-02-15 | 2023-09-19 | 日本株式会社日立高新技术科学 | 复合带电粒子束装置和控制方法 |
JP2021068529A (ja) * | 2019-10-18 | 2021-04-30 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、複合荷電粒子ビーム装置、及び荷電粒子ビーム装置の制御方法 |
JP2021068530A (ja) * | 2019-10-18 | 2021-04-30 | 株式会社日立ハイテクサイエンス | 集束イオンビーム装置、及び集束イオンビーム装置の制御方法 |
JP7308582B2 (ja) | 2019-10-18 | 2023-07-14 | 株式会社日立ハイテクサイエンス | 集束イオンビーム装置、及び集束イオンビーム装置の制御方法 |
JP7308581B2 (ja) | 2019-10-18 | 2023-07-14 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、複合荷電粒子ビーム装置、及び荷電粒子ビーム装置の制御方法 |
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EP2772930A3 (en) | 2017-04-19 |
US20140239175A1 (en) | 2014-08-28 |
CN104008943A (zh) | 2014-08-27 |
US20150325403A1 (en) | 2015-11-12 |
CN104008943B (zh) | 2018-02-16 |
JP6341680B2 (ja) | 2018-06-13 |
EP2772930B1 (en) | 2018-07-04 |
US9443692B2 (en) | 2016-09-13 |
US8933414B2 (en) | 2015-01-13 |
EP2772930A2 (en) | 2014-09-03 |
US9087672B2 (en) | 2015-07-21 |
US20150083929A1 (en) | 2015-03-26 |
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