JP2014150211A5 - - Google Patents

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Publication number
JP2014150211A5
JP2014150211A5 JP2013019159A JP2013019159A JP2014150211A5 JP 2014150211 A5 JP2014150211 A5 JP 2014150211A5 JP 2013019159 A JP2013019159 A JP 2013019159A JP 2013019159 A JP2013019159 A JP 2013019159A JP 2014150211 A5 JP2014150211 A5 JP 2014150211A5
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JP
Japan
Prior art keywords
semiconductor layer
conductivity type
substrate
field effect
insulated gate
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JP2013019159A
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English (en)
Japanese (ja)
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JP2014150211A (ja
JP6222540B2 (ja
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Publication of JP2014150211A5 publication Critical patent/JP2014150211A5/ja
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JP2013019159A 2013-02-04 2013-02-04 絶縁ゲート型電界効果トランジスタの製造方法 Active JP6222540B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013019159A JP6222540B2 (ja) 2013-02-04 2013-02-04 絶縁ゲート型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013019159A JP6222540B2 (ja) 2013-02-04 2013-02-04 絶縁ゲート型電界効果トランジスタの製造方法

Related Child Applications (1)

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JP2017180808A Division JP6469795B2 (ja) 2017-09-21 2017-09-21 絶縁ゲート型電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2014150211A JP2014150211A (ja) 2014-08-21
JP2014150211A5 true JP2014150211A5 (pt) 2016-06-23
JP6222540B2 JP6222540B2 (ja) 2017-11-01

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ID=51572953

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JP2013019159A Active JP6222540B2 (ja) 2013-02-04 2013-02-04 絶縁ゲート型電界効果トランジスタの製造方法

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JP (1) JP6222540B2 (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6906427B2 (ja) * 2017-11-09 2021-07-21 株式会社豊田中央研究所 窒化物半導体装置とその製造方法
JPWO2022224902A1 (pt) * 2021-04-20 2022-10-27
WO2023228605A1 (ja) * 2022-05-24 2023-11-30 株式会社ジャパンディスプレイ 積層構造体とその作製方法、および積層構造体を含む半導体装置
WO2024084630A1 (ja) 2022-10-19 2024-04-25 京セラ株式会社 半導体基板、半導体基板の製造方法および製造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3036495B2 (ja) * 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JP3705142B2 (ja) * 2001-03-27 2005-10-12 ソニー株式会社 窒化物半導体素子及びその作製方法
JP4191599B2 (ja) * 2001-08-01 2008-12-03 株式会社パウデック 結晶層の製造方法および素子の製造方法
TWI319893B (en) * 2006-08-31 2010-01-21 Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate
JP4638958B1 (ja) * 2009-08-20 2011-02-23 株式会社パウデック 半導体素子の製造方法

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