JP2014150211A5 - - Google Patents
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- Publication number
- JP2014150211A5 JP2014150211A5 JP2013019159A JP2013019159A JP2014150211A5 JP 2014150211 A5 JP2014150211 A5 JP 2014150211A5 JP 2013019159 A JP2013019159 A JP 2013019159A JP 2013019159 A JP2013019159 A JP 2013019159A JP 2014150211 A5 JP2014150211 A5 JP 2014150211A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- conductivity type
- substrate
- field effect
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 40
- 239000000758 substrate Substances 0.000 claims 15
- 230000005669 field effect Effects 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 230000001590 oxidative Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013019159A JP6222540B2 (ja) | 2013-02-04 | 2013-02-04 | 絶縁ゲート型電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013019159A JP6222540B2 (ja) | 2013-02-04 | 2013-02-04 | 絶縁ゲート型電界効果トランジスタの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017180808A Division JP6469795B2 (ja) | 2017-09-21 | 2017-09-21 | 絶縁ゲート型電界効果トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014150211A JP2014150211A (ja) | 2014-08-21 |
| JP2014150211A5 true JP2014150211A5 (ko) | 2016-06-23 |
| JP6222540B2 JP6222540B2 (ja) | 2017-11-01 |
Family
ID=51572953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013019159A Active JP6222540B2 (ja) | 2013-02-04 | 2013-02-04 | 絶縁ゲート型電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6222540B2 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6906427B2 (ja) * | 2017-11-09 | 2021-07-21 | 株式会社豊田中央研究所 | 窒化物半導体装置とその製造方法 |
| US20240203732A1 (en) * | 2021-04-20 | 2024-06-20 | Kyocera Corporation | Semiconductor substrate, manufacturing method and manufacturing apparatus for semiconductor substrate, semiconductor device, manufacturing method and manufacturing apparatus for semiconductor device, and electronic device |
| JPWO2023228605A1 (ko) * | 2022-05-24 | 2023-11-30 | ||
| WO2024084630A1 (ja) | 2022-10-19 | 2024-04-25 | 京セラ株式会社 | 半導体基板、半導体基板の製造方法および製造装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3036495B2 (ja) * | 1997-11-07 | 2000-04-24 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の製造方法 |
| JP3705142B2 (ja) * | 2001-03-27 | 2005-10-12 | ソニー株式会社 | 窒化物半導体素子及びその作製方法 |
| JP4191599B2 (ja) * | 2001-08-01 | 2008-12-03 | 株式会社パウデック | 結晶層の製造方法および素子の製造方法 |
| TWI319893B (en) * | 2006-08-31 | 2010-01-21 | Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate | |
| JP4638958B1 (ja) * | 2009-08-20 | 2011-02-23 | 株式会社パウデック | 半導体素子の製造方法 |
-
2013
- 2013-02-04 JP JP2013019159A patent/JP6222540B2/ja active Active
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