JP2014093312A - 太陽電池用導電性ペースト組成物 - Google Patents
太陽電池用導電性ペースト組成物 Download PDFInfo
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- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 111
- 239000000843 powder Substances 0.000 claims description 28
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052709 silver Inorganic materials 0.000 abstract description 20
- 239000004332 silver Substances 0.000 abstract description 17
- 229910052744 lithium Inorganic materials 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract 1
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- 239000002245 particle Substances 0.000 description 24
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- 239000000758 substrate Substances 0.000 description 19
- 238000010304 firing Methods 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000002003 electrode paste Substances 0.000 description 9
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- 229910000679 solder Inorganic materials 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052745 lead Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
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- 229910052751 metal Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
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- 229910052797 bismuth Inorganic materials 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
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- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
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- 238000007496 glass forming Methods 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229940019931 silver phosphate Drugs 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
【解決手段】 太陽電池10は、受光面電極28がファイヤースルー法で設けられているが、その受光面電極28が、PbOを28〜60(mol%)の範囲内、B2O3を3〜18(mol%)の範囲内、SiO2を10〜40(mol%)の範囲内、Li2Oを3〜30(mol%)の範囲内で含むガラスを1〜10重量部の範囲で、TeO2を0.3〜3.0重量部の範囲で、銀100重量部に対してそれぞれ含む厚膜銀で構成されていることから、その厚膜銀ペーストは、Li量が極めて多くされているにも拘わらず、ファイヤースルーの際に適度な侵食性を有し、且つAgが穏やかに析出する。そのため、オーミックコンタクトが得られ、電気的特性に優れた太陽電池10が得られる。
【選択図】図1
Description
Claims (5)
- 導電性粉末と、ガラスフリットと、Te化合物と、ベヒクルとを含む太陽電池用導電性ペースト組成物であって、
前記ガラスフリットは、Pb/Te(mol比)が0.4〜5.5の範囲内にあり、且つ、酸化物換算で3〜30(mol%)のLi2Oと、28〜60(mol%)のPbOと、3〜18(mol%)のB2O3と、10〜40(mol%)のSiO2とを含むガラスから成ることを特徴とする太陽電池用導電性ペースト組成物。 - 前記ガラスは、Pb/(Si+Al)(mol比)が1.0〜3.2の範囲内にある請求項1の太陽電池用導電性ペースト組成物。
- 前記ガラスは、酸化物換算で5.0(mol%)以下のSO2を含むものである請求項1または請求項2の太陽電池用導電性ペースト組成物。
- 前記ガラスは、酸化物換算で18(mol%)以下のAl2O3を含むものである請求項1乃至請求項3の何れか1項に記載の太陽電池用導電性ペースト組成物。
- 前記ガラスは、酸化物換算で6.0(mol%)以下のP2O5を含むものである請求項1乃至請求項4の何れか1項に記載の太陽電池用導電性ペースト組成物。
Priority Applications (3)
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JP2012240996A JP5756447B2 (ja) | 2012-10-31 | 2012-10-31 | 太陽電池用導電性ペースト組成物 |
TW102136548A TW201425260A (zh) | 2012-10-31 | 2013-10-09 | 太陽電池用導電性糊組成物 |
CN201310533106.3A CN103794661A (zh) | 2012-10-31 | 2013-10-31 | 太阳能电池用导电性糊组合物 |
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JP2012240996A JP5756447B2 (ja) | 2012-10-31 | 2012-10-31 | 太陽電池用導電性ペースト組成物 |
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JP5756447B2 JP5756447B2 (ja) | 2015-07-29 |
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CN (1) | CN103794661A (ja) |
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Cited By (8)
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---|---|---|---|---|
US20140060632A1 (en) * | 2012-08-30 | 2014-03-06 | E I Du Pont De Nemours And Company | Use of a conductive composition containing lead-tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
CN105280731A (zh) * | 2014-06-05 | 2016-01-27 | 株式会社则武 | 太阳能电池受光面电极用糊、其制造方法以及太阳能电池单元 |
JP5856277B1 (ja) * | 2014-11-27 | 2016-02-09 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペーストおよび太陽電池セル |
JP6074483B1 (ja) * | 2015-11-10 | 2017-02-01 | 株式会社ノリタケカンパニーリミテド | 導電性組成物 |
WO2019017656A1 (ko) * | 2017-07-17 | 2019-01-24 | 한화첨단소재 주식회사 | 유리프릿, 이를 포함하는 perc 태양전지 전극 형성용 페이스트, 및 perc 태양전지 전극 |
US10468542B2 (en) | 2010-05-04 | 2019-11-05 | Dupont Electronics, Inc. | Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices |
US10658528B2 (en) | 2017-04-18 | 2020-05-19 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
US10770601B2 (en) | 2015-06-17 | 2020-09-08 | Namics Corporation | Electro-conductive paste, solar cell and method for producing solar cell |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10040717B1 (en) * | 2017-09-18 | 2018-08-07 | Jiangxi Jiayin Science and Technology, Ltd. | Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces |
CN107673624A (zh) * | 2017-09-20 | 2018-02-09 | 无锡帝科电子材料科技有限公司 | 用于制备太阳能电池电极的玻璃粉料、包括其的糊剂组合物、太阳能电池电极和太阳能电池 |
Citations (4)
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JPH08239238A (ja) * | 1995-01-28 | 1996-09-17 | Cerdec Ag Keramische Farben | ガラス組成物、ガラスフリット、着色調合物、着色ペースト、ガラスエナメル又はセラミック装飾材の製法、ガラスエナメルで被覆された基材、ガラスフリットの製法及び白色装飾用塗料 |
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- 2013-10-09 TW TW102136548A patent/TW201425260A/zh unknown
- 2013-10-31 CN CN201310533106.3A patent/CN103794661A/zh active Pending
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WO2011140185A1 (en) * | 2010-05-04 | 2011-11-10 | E. I. Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-lithium-titanium-oxides, and their use in the manufacture of semiconductor devices |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US10468542B2 (en) | 2010-05-04 | 2019-11-05 | Dupont Electronics, Inc. | Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices |
US10559703B2 (en) | 2010-05-04 | 2020-02-11 | Dupont Electronics, Inc. | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
US8969709B2 (en) * | 2012-08-30 | 2015-03-03 | E I Du Pont De Nemours And Company | Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
US20140060632A1 (en) * | 2012-08-30 | 2014-03-06 | E I Du Pont De Nemours And Company | Use of a conductive composition containing lead-tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
CN105280731A (zh) * | 2014-06-05 | 2016-01-27 | 株式会社则武 | 太阳能电池受光面电极用糊、其制造方法以及太阳能电池单元 |
JP5856277B1 (ja) * | 2014-11-27 | 2016-02-09 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペーストおよび太陽電池セル |
US10770601B2 (en) | 2015-06-17 | 2020-09-08 | Namics Corporation | Electro-conductive paste, solar cell and method for producing solar cell |
JP2017092254A (ja) * | 2015-11-10 | 2017-05-25 | 株式会社ノリタケカンパニーリミテド | 導電性組成物 |
JP6074483B1 (ja) * | 2015-11-10 | 2017-02-01 | 株式会社ノリタケカンパニーリミテド | 導電性組成物 |
US10658528B2 (en) | 2017-04-18 | 2020-05-19 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
WO2019017656A1 (ko) * | 2017-07-17 | 2019-01-24 | 한화첨단소재 주식회사 | 유리프릿, 이를 포함하는 perc 태양전지 전극 형성용 페이스트, 및 perc 태양전지 전극 |
KR20190008779A (ko) * | 2017-07-17 | 2019-01-25 | 한화큐셀앤드첨단소재 주식회사 | 유리프릿, 이를 포함하는 perc 태양전지 전극 형성용 페이스트, 및 perc 태양전지 전극 |
KR101961946B1 (ko) * | 2017-07-17 | 2019-03-25 | 한화큐셀앤드첨단소재 주식회사 | 유리프릿, 이를 포함하는 perc 태양전지 전극 형성용 페이스트, 및 perc 태양전지 전극 |
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