JP2014076541A - 多層ナノ構造フィルム - Google Patents
多層ナノ構造フィルム Download PDFInfo
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- JP2014076541A JP2014076541A JP2013268689A JP2013268689A JP2014076541A JP 2014076541 A JP2014076541 A JP 2014076541A JP 2013268689 A JP2013268689 A JP 2013268689A JP 2013268689 A JP2013268689 A JP 2013268689A JP 2014076541 A JP2014076541 A JP 2014076541A
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- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
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- 150000003384 small molecules Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/9075—Catalytic material supported on carriers, e.g. powder carriers
- H01M4/9083—Catalytic material supported on carriers, e.g. powder carriers on carbon or graphite
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- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/06—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/0238—Impregnation, coating or precipitation via the gaseous phase-sublimation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
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- H01M4/88—Processes of manufacture
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- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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- H—ELECTRICITY
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- H01M4/90—Selection of catalytic material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inert Electrodes (AREA)
- Catalysts (AREA)
- Fuel Cell (AREA)
Abstract
【解決手段】ナノ構造支持要素の複数の層を含むフィルムの形成方法を説明している。ナノ構造支持要素の第1層を、基材上にベース材料を堆積させてアニールすることによって形成させる。その後、ナノ構造の第1層の更なる成長を抑制する。ナノ構造支持要素の追加層を、追加の堆積およびアニール工程によってナノ構造の第1層上に成長させてもよい。前記多層フィルムは、増大した表面積を提供し、また触媒活性が、触媒粒子を担持するために利用できる表面積と関連するデバイスでは特に有用である。
【選択図】図10A
Description
この式から分かる。本明細書で説明される多層フィルム類は、より高い密度(単位面積当たりのナノ構造要素の数)Nを提供し、それ故に、触媒層の表面積Sを増加させる。本発明の実施形態による多層ナノ構造フィルムの形成を、図1のフローチャートに例示する。このプロセスは、複数の針状のナノ構造支持要素層をもたらす。このプロセスは、基材上の第1材料層の堆積110と、第1アニール工程中のナノ構造支持要素の形成120を包含する。第1層のナノ構造支持要素の成長を抑制する125。例えば、閉塞材料をナノ構造支持要素上に堆積させる。閉塞材料は、ナノ構造支持要素の更なる成長を抑制する。第2材料層を、第1のナノ構造支持要素層上に堆積させる130。第2アニール工程140により、第2のナノ構造支持要素層が生成される。追加のナノ構造支持要素層を形成してもよい。例えば、約2層〜約10層を形成してよい。前記フィルムの表面積は、積み重ねたナノ構造支持要素層の数に相当する倍率で増大させることができる。
本実施例では、4つのナノ構造層を、以降、MCTSと呼ぶ微構造化触媒転写基材上に形成した。MCTSは、厚さ50ミクロン、幅約30cmのポリイミド製のロールであって、米国特許第6,136,412号に教示されているようにして、90度の夾角で深さ(ピークから谷まで)12ミクロンおよびピークからピークまでが24ミクロンの一連の平行なV型の溝およびピークで形成されたアクリレート樹脂コーティングを有する。公称厚さ1680オングストローム(平面相当)の第1のPR149層を、MCTSウェブ上にコーティングした。それを、前記ウェブを300℃に加熱した直径1.8m(6フィート)のドラムにウェブ速度0.005m/秒(1フィート/分)〜0.01m/秒(2フィート/分)で通すことで、連続ロールとして真空下でアニールして、ナノ構造フィルムを製造した。次に、前記ウェブ上にPtを、単位平面当たりPt約650オングストロームに相当する約0.14mg/cm2の質量負荷までスパッタした。ナノ構造化PR149フィルム類の形成およびコーティングに関する他の参考文献は、本明細書に組み込まれた多数の特許に見出すことができる。
本実施例では、2つのナノ構造層を異なるMCTS基材上に、実施例1よりも大量のPR149を用いて形成し、その後の表面積を2つの方法で測定する。MCTSは、厚さ50μm、幅約30cmのポリイミド製のロールであって、米国特許第6,136,412号に教示されているようにして、角度90度で深さ6ミクロンおよびピークからピークまでが12ミクロンの一連の平行なV型の溝およびピークで形成されたアクリレート樹脂コーティングを有する。厚さ約2100オングストローム(平面相当)の第1のPR149層を、MCTSロール上にコーティングし、真空下で連続ロールとしてアニールしてナノ構造フィルムを製造する。
Claims (35)
- 複数のナノ構造層を含む物品であって、前記ナノ構造層が針状のナノ構造支持要素を含む、物品。
- 前記ナノ構造層が、約0.1μm未満の平均断面寸法を有するナノ構造支持要素を含む、請求項1に記載の物品。
- 前記ナノ構造層が、約0.3μmを超える長さを有するナノ構造支持要素を含む、請求項1に記載の物品。
- 前記ナノ構造層のそれぞれが、1cm2当たりナノ構造支持要素で約107〜約1011個の範囲にあるナノ構造支持要素の面密度を有する、請求項1に記載の物品。
- 前記ナノ構造層が、有機系材料で形成されたナノ構造支持要素を含む、請求項1に記載の物品。
- 前記有機系材料がペリレンレッドを含む、請求項5に記載の物品。
- 前記ナノ構造層が、コーティングを有するナノ構造支持要素を含む、請求項1に記載の物品。
- 前記コーティングが触媒材料を含む、請求項7に記載の物品。
- 前記コーティングが金属を含む、請求項7に記載の物品。
- 前記金属が白金族金属を含む、請求項9に記載の物品。
- ナノ構造層のそれぞれの厚さが約0.3〜約1.3μmである、請求項1に記載の物品。
- 前記複数の層が約2層〜約10層から構成される、請求項1に記載の物品。
- 基材を更に含み、前記複数のナノ構造層が前記基材上に形成される、請求項1に記載の物品。
- 前記基材が微構造化基材を含む、請求項13に記載の物品。
- 前記基材が多孔質である、請求項13に記載の物品。
- イオン導電膜を更に含み、前記複数のナノ構造層が前記イオン導電膜の表面上に配置される、請求項1に記載の物品。
- 拡散集電体を更に含み、前記複数のナノ構造層が前記拡散集電体の表面上に配置される、請求項1に記載の物品。
- 膜電極接合体を更に含み、前記複数のナノ構造層が前記膜電極接合体の一構成要素上に配置される、請求項1に記載の物品。
- 電気化学デバイスを更に含み、前記電気化学デバイスが前記膜電極接合体を含む、請求項18に記載の物品。
- 前記電気化学デバイスがプロトン交換膜燃料電池である、請求項19に記載の物品。
- デバイスを更に含み、前記の複数のナノ構造層が前記デバイス内に組み込まれており、そして前記デバイスが、フィルター、光学吸収体、光起電デバイス、センサー、フレキシブル電子回路、または生物学的吸着支持体を含む、請求項1に記載の物品。
- 材料の第1層を基材上に堆積させること;
前記材料の第1層をアニールして、ナノ構造支持要素の第1層を形成させること;
前記ナノ構造支持要素の前記第1層の成長部位を閉塞すること;
ナノ構造支持要素の前記第1層の上に、材料の第2層を堆積させること;および
前記材料の第2層をアニールして、ナノ構造支持要素の第2層を形成させること
、を含む方法。 - ナノ構造支持要素の予め形成された層の成長部位を閉塞することによって約2層〜約10層のナノ構造支持要素を形成させること、前記の予め形成されたナノ構造支持要素の層の上に追加の材料の層を堆積させること、および前記追加の材料の層をアニールして、追加のナノ構造支持要素の層を形成させることを更に含む、請求項1に記載の方法。
- 前記第1層の前記ナノ構造支持要素の前記成長部位を閉塞することが、前記ナノ構造支持要素の第1層の上に閉塞材料を堆積させることを含む、請求項22に記載の方法。
- 前記閉塞材料が前記第1層の前記ナノ構造支持要素のらせん転位を閉塞する、請求項24に記載の方法。
- 前記閉塞材料が金属を含む、請求項24に記載の方法。
- 前記材料の第1層をアニールすることが、約230℃〜約270℃の温度で約3分〜約60分間アニールすることを含み;そして、
前記材料の第2層をアニールすることが、約230℃〜約270℃の温度で約3分〜約60分間アニールすることを含む、請求項22に記載の方法。 - 前記材料の第1層を前記基材上に堆積させることが、前記材料の第1層を拡散集電体上に堆積させることを含む、請求項22に記載の方法。
- 前記材料の第1層を前記基材上に堆積させることが、前記材料の第1層を微構造化基材上に堆積させることを含む、請求項22に記載の方法。
- 前記材料の第1層を堆積させることおよび前記材料の第2層を堆積させることが、有機系材料を堆積させることを含む、請求項22に記載の方法。
- 前記有機系材料がペリレンレッドを含む、請求項30に記載の方法。
- 前記ナノ構造支持要素の第1および第2の層の上に触媒材料を堆積させて触媒で被覆された多層ナノ構造フィルムを形成させることを更に含む、請求項22に記載の方法。
- 前記触媒材料が白金族金属を堆積させることを含む、請求項32に記載の方法。
- 前記触媒で被覆された多層ナノ構造フィルムをイオン導電膜の少なくとも1つの表面へ転写して、触媒で被覆された膜を形成させることを更に含む、請求項32に記載の方法。
- 多層ナノ構造フィルムを用いて膜電極接合体を形成することを更に含む、請求項32に記載の方法。
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Also Published As
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WO2007032864A2 (en) | 2007-03-22 |
JP2009509776A (ja) | 2009-03-12 |
US20160149230A1 (en) | 2016-05-26 |
JP5841121B2 (ja) | 2016-01-13 |
CN101263620A (zh) | 2008-09-10 |
WO2007032864A3 (en) | 2007-05-10 |
CN101263620B (zh) | 2011-06-08 |
US20080020923A1 (en) | 2008-01-24 |
EP1925049B1 (en) | 2015-02-25 |
EP1925049A2 (en) | 2008-05-28 |
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