JP2014074908A5 - - Google Patents

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Publication number
JP2014074908A5
JP2014074908A5 JP2013189247A JP2013189247A JP2014074908A5 JP 2014074908 A5 JP2014074908 A5 JP 2014074908A5 JP 2013189247 A JP2013189247 A JP 2013189247A JP 2013189247 A JP2013189247 A JP 2013189247A JP 2014074908 A5 JP2014074908 A5 JP 2014074908A5
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JP
Japan
Prior art keywords
transistor
electrode
storage capacitor
light
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013189247A
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English (en)
Japanese (ja)
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JP2014074908A (ja
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Publication date
Application filed filed Critical
Priority to JP2013189247A priority Critical patent/JP2014074908A/ja
Priority claimed from JP2013189247A external-priority patent/JP2014074908A/ja
Publication of JP2014074908A publication Critical patent/JP2014074908A/ja
Publication of JP2014074908A5 publication Critical patent/JP2014074908A5/ja
Withdrawn legal-status Critical Current

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JP2013189247A 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法 Withdrawn JP2014074908A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013189247A JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012202135 2012-09-13
JP2012202135 2012-09-13
JP2013189247A JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018241952A Division JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置

Publications (2)

Publication Number Publication Date
JP2014074908A JP2014074908A (ja) 2014-04-24
JP2014074908A5 true JP2014074908A5 (enrdf_load_stackoverflow) 2016-10-27

Family

ID=50749055

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2013189247A Withdrawn JP2014074908A (ja) 2012-09-13 2013-09-12 半導体装置及び半導体装置の駆動方法
JP2018241952A Withdrawn JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置
JP2020141755A Withdrawn JP2021028719A (ja) 2012-09-13 2020-08-25 半導体装置の駆動方法
JP2022000945A Active JP7490686B2 (ja) 2012-09-13 2022-01-06 表示装置
JP2024079612A Active JP7664457B2 (ja) 2012-09-13 2024-05-15 表示装置
JP2025063295A Pending JP2025100632A (ja) 2012-09-13 2025-04-07 液晶表示装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2018241952A Withdrawn JP2019053329A (ja) 2012-09-13 2018-12-26 半導体装置
JP2020141755A Withdrawn JP2021028719A (ja) 2012-09-13 2020-08-25 半導体装置の駆動方法
JP2022000945A Active JP7490686B2 (ja) 2012-09-13 2022-01-06 表示装置
JP2024079612A Active JP7664457B2 (ja) 2012-09-13 2024-05-15 表示装置
JP2025063295A Pending JP2025100632A (ja) 2012-09-13 2025-04-07 液晶表示装置

Country Status (1)

Country Link
JP (6) JP2014074908A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
CN114694524B (zh) * 2018-12-29 2023-08-25 武汉华星光电半导体显示技术有限公司 一种oled显示面板及智能终端
JP7592588B2 (ja) * 2019-06-07 2024-12-02 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2737757B2 (ja) * 1997-02-27 1998-04-08 セイコーエプソン株式会社 液晶装置
JP3683463B2 (ja) 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
GB2372620A (en) * 2001-02-27 2002-08-28 Sharp Kk Active Matrix Device
JP4179800B2 (ja) * 2002-05-24 2008-11-12 ソニー株式会社 表示装置及びその製造方法
GB0318611D0 (en) * 2003-08-08 2003-09-10 Koninkl Philips Electronics Nv Circuit for signal amplification and use of the same in active matrix devices
JP5148912B2 (ja) 2006-04-06 2013-02-20 株式会社半導体エネルギー研究所 液晶表示装置及び半導体装置、並びに電子機器
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
KR20120071398A (ko) * 2009-09-16 2012-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20120084751A (ko) * 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011052384A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9230994B2 (en) * 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI432865B (zh) 2010-12-01 2014-04-01 Au Optronics Corp 畫素結構及其製作方法
JP5859839B2 (ja) * 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
TWI570920B (zh) * 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法

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