JP2014074908A - 半導体装置及び半導体装置の駆動方法 - Google Patents
半導体装置及び半導体装置の駆動方法 Download PDFInfo
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- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
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- 238000004549 pulsed laser deposition Methods 0.000 description 1
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- 230000000630 rising effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- 238000012916 structural analysis Methods 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2013189247A JP2014074908A (ja) | 2012-09-13 | 2013-09-12 | 半導体装置及び半導体装置の駆動方法 |
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| JP2012202135 | 2012-09-13 | ||
| JP2012202135 | 2012-09-13 | ||
| JP2013189247A JP2014074908A (ja) | 2012-09-13 | 2013-09-12 | 半導体装置及び半導体装置の駆動方法 |
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| JP2018241952A Withdrawn JP2019053329A (ja) | 2012-09-13 | 2018-12-26 | 半導体装置 |
| JP2020141755A Withdrawn JP2021028719A (ja) | 2012-09-13 | 2020-08-25 | 半導体装置の駆動方法 |
| JP2022000945A Active JP7490686B2 (ja) | 2012-09-13 | 2022-01-06 | 表示装置 |
| JP2024079612A Active JP7664457B2 (ja) | 2012-09-13 | 2024-05-15 | 表示装置 |
| JP2025063295A Pending JP2025100632A (ja) | 2012-09-13 | 2025-04-07 | 液晶表示装置 |
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| JP2018241952A Withdrawn JP2019053329A (ja) | 2012-09-13 | 2018-12-26 | 半導体装置 |
| JP2020141755A Withdrawn JP2021028719A (ja) | 2012-09-13 | 2020-08-25 | 半導体装置の駆動方法 |
| JP2022000945A Active JP7490686B2 (ja) | 2012-09-13 | 2022-01-06 | 表示装置 |
| JP2024079612A Active JP7664457B2 (ja) | 2012-09-13 | 2024-05-15 | 表示装置 |
| JP2025063295A Pending JP2025100632A (ja) | 2012-09-13 | 2025-04-07 | 液晶表示装置 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019195101A (ja) * | 2014-05-15 | 2019-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN114694524A (zh) * | 2018-12-29 | 2022-07-01 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板及智能终端 |
| JP2025019138A (ja) * | 2019-06-07 | 2025-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| JPH09197444A (ja) * | 1997-02-27 | 1997-07-31 | Seiko Epson Corp | 液晶装置 |
| US20020154253A1 (en) * | 2001-02-27 | 2002-10-24 | Cairns Graham Andrew | Active matrix device and display |
| JP2003344866A (ja) * | 2002-05-24 | 2003-12-03 | Sony Corp | 表示装置及びその製造方法 |
| US20060232577A1 (en) * | 2003-08-08 | 2006-10-19 | Edwards Martin J | Circuit for signal amplification and use of the same in active matrix devices |
| JP2009302520A (ja) * | 2008-05-16 | 2009-12-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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| JP2012083738A (ja) * | 2010-09-15 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
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| US8115883B2 (en) | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
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-
2020
- 2020-08-25 JP JP2020141755A patent/JP2021028719A/ja not_active Withdrawn
-
2022
- 2022-01-06 JP JP2022000945A patent/JP7490686B2/ja active Active
-
2024
- 2024-05-15 JP JP2024079612A patent/JP7664457B2/ja active Active
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2025
- 2025-04-07 JP JP2025063295A patent/JP2025100632A/ja active Pending
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| US20020154253A1 (en) * | 2001-02-27 | 2002-10-24 | Cairns Graham Andrew | Active matrix device and display |
| JP2003344866A (ja) * | 2002-05-24 | 2003-12-03 | Sony Corp | 表示装置及びその製造方法 |
| US20060232577A1 (en) * | 2003-08-08 | 2006-10-19 | Edwards Martin J | Circuit for signal amplification and use of the same in active matrix devices |
| JP2009302520A (ja) * | 2008-05-16 | 2009-12-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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| JP2012083738A (ja) * | 2010-09-15 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2012160708A (ja) * | 2011-01-14 | 2012-08-23 | Semiconductor Energy Lab Co Ltd | 記憶素子、記憶装置、信号処理回路、記憶素子の駆動方法 |
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| JP2019195101A (ja) * | 2014-05-15 | 2019-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10998448B2 (en) | 2014-05-15 | 2021-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor device including back gate comprising oxide semiconductor material |
| US11594642B2 (en) | 2014-05-15 | 2023-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor device including back gate comprising oxide semiconductor material |
| CN114694524A (zh) * | 2018-12-29 | 2022-07-01 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板及智能终端 |
| CN114694524B (zh) * | 2018-12-29 | 2023-08-25 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板及智能终端 |
| JP2025019138A (ja) * | 2019-06-07 | 2025-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019053329A (ja) | 2019-04-04 |
| JP7664457B2 (ja) | 2025-04-17 |
| JP7490686B2 (ja) | 2024-05-27 |
| JP2021028719A (ja) | 2021-02-25 |
| JP2025100632A (ja) | 2025-07-03 |
| JP2024100842A (ja) | 2024-07-26 |
| JP2022058513A (ja) | 2022-04-12 |
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