JP2014045193A - 太陽電池およびそれを用いた太陽電池モジュール - Google Patents
太陽電池およびそれを用いた太陽電池モジュール Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 87
- 239000010409 thin film Substances 0.000 claims description 70
- 239000010410 layer Substances 0.000 claims description 66
- 239000004065 semiconductor Substances 0.000 claims description 52
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 28
- 229920000642 polymer Polymers 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
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- 229920002518 Polyallylamine hydrochloride Polymers 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 12
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 12
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- 239000000565 sealant Substances 0.000 claims description 9
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 8
- 229920002873 Polyethylenimine Polymers 0.000 claims description 6
- 229920000729 poly(L-lysine) polymer Polymers 0.000 claims description 6
- 229920000371 poly(diallyldimethylammonium chloride) polymer Polymers 0.000 claims description 6
- 229920001444 polymaleic acid Polymers 0.000 claims description 6
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 5
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
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- 229910013063 LiBF 4 Inorganic materials 0.000 claims description 3
- 229910013684 LiClO 4 Inorganic materials 0.000 claims description 3
- 229920006254 polymer film Polymers 0.000 claims description 3
- 229910001386 lithium phosphate Inorganic materials 0.000 claims description 2
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 claims description 2
- -1 LiCF 3 SO 3 Inorganic materials 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 33
- 230000005669 field effect Effects 0.000 abstract description 7
- 229920000554 ionomer Polymers 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 238000005215 recombination Methods 0.000 description 11
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- 238000004519 manufacturing process Methods 0.000 description 8
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- 238000005259 measurement Methods 0.000 description 8
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000005038 ethylene vinyl acetate Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
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- 229920002397 thermoplastic olefin Polymers 0.000 description 6
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
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- 239000008393 encapsulating agent Substances 0.000 description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 5
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 5
- 229960002796 polystyrene sulfonate Drugs 0.000 description 5
- 239000011970 polystyrene sulfonate Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 229920000867 polyelectrolyte Polymers 0.000 description 4
- 239000005518 polymer electrolyte Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 description 3
- 238000000627 alternating current impedance spectroscopy Methods 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 125000003010 ionic group Chemical group 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229920003182 Surlyn® Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 2
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- 229910001410 inorganic ion Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000447 polyanionic polymer Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
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- 239000004416 thermosoftening plastic Substances 0.000 description 2
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 1
- 229920012753 Ethylene Ionomers Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229920006318 anionic polymer Polymers 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229920006317 cationic polymer Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002801 charged material Substances 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
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- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Abstract
【解決手段】太陽電池は、第1電極、第2電極、および第1電極と第2電極の間に配置された光電変換層を含む。太陽電池は、さらに、第1電極の最外側面および第2電極の最外側面のうちの少なくとも1つに配置されたイオン性荷電膜を含む。
【選択図】図1
Description
102、202、406、708、902 第1電極
102a、202a、406a、706a、708a 最外側面
102b、202b 内表面
104、204、404、602、704、900 イオン性荷電膜
106、210、408、706 第2電極
108、410、710 光電変換層
112、206 半導体ベース領域
114、208 半導体エミッタ領域
116 p‐n接合領域
118、214、500 封止剤
212 反射防止層
300a 空間電荷幅
300b 正孔の電位障壁
400、700 透明基板
402 薄膜太陽電池
412 透明導電酸化物層
414 金属電極
600 電気絶縁層
800 金属接触線
Claims (31)
- 最外側面および内表面を含む第1電極と、
最外側面および内表面を含む第2電極と、
前記第1電極の前記内表面と前記第2電極の前記内表面の間に配置された光電変換層と、
前記第1電極の前記最外側面および前記第2電極の前記最外側面のうちの少なくとも1つに配置されたイオン性荷電膜と、
を少なくとも含む太陽電池。 - 前記光電変換層が、半導体ベース領域と、半導体エミッタ領域と、前記半導体ベース領域と前記半導体エミッタ領域の間に配置されたp‐n接合領域とを含む請求項1に記載の太陽電池。
- 前記第2電極が、透明導電酸化物または金属グリッド電極を含む請求項1に記載の太陽電池。
- 前記第1電極が、透明導電酸化物、金属層、または前記透明導電酸化物および前記金属層を有するラミネート層を含む請求項1に記載の太陽電池。
- 前記イオン性荷電膜の電気極性が、前記第1電極に接触している前記半導体ベース領域または前記半導体エミッタ領域の多数キャリアの極性と反対である請求項2に記載の太陽電池。
- 前記イオン性荷電膜が、無機荷電薄膜または有機荷電薄膜を含む請求項1に記載の太陽電池。
- 前記無機荷電薄膜が、リン酸リチウムオキシナイトライド(LIPON)、LiClO4、LiCF3SO3またはLiBF4を含む請求項6に記載の太陽電池。
- 前記有機荷電薄膜が、負電荷をもつポリマー薄膜または正電荷をもつポリマー薄膜を含む請求項6に記載の太陽電池。
- 前記負電荷をもつポリマー薄膜が、ポリスチレンスルホン酸(PSSA)、ポリアクリル酸(PAA)、ポリマレイン酸(PMA)またはポリパーフルオロスルフォン酸(PFSA)を含む請求項8に記載の太陽電池。
- 前記正電荷をもつポリマー薄膜が、ポリジアリルジメチル アンモニウムクロリド(PDDA)、ポリアリルアミン塩酸塩(PAH)、ポリ‐L‐リシン(PLL)またはポリエチレンイミン(PEI)を含む請求項8に記載の太陽電池。
- 前記イオン性荷電膜が、単一層または多重層を含む請求項1に記載の太陽電池。
- 前記イオン性荷電膜が、10-3〜10-6S/cmのイオン導電率を有する請求項1に記載の太陽電池。
- 前記太陽電池が、結晶シリコン太陽電池、アモルファスシリコン薄膜太陽電池、アモルファス微結晶シリコン薄膜太陽電池、CIGSまたはテルル化カドミウム(CdTe)太陽電池を含む請求項1に記載の太陽電池。
- 前記イオン性荷電膜が、前記第1電極と前記第2電極の両方の前記最外側面に配置された請求項1に記載の太陽電池。
- それぞれが、
最外側面および内表面を含む第1電極と、
最外側面および内表面を含む第2電極と、
前記第1電極の前記内表面と前記第2電極の前記内表面の間に配置された光電変換層
と、
前記第1電極の前記最外側面および前記第2電極の前記最外側面のうちの少なくとも
1つに配置されたイオン性荷電膜と
を含む複数の太陽電池と、
前記イオン性荷電膜に付着する封止剤と
を少なくとも含む太陽電池モジュール。 - 前記光電変換層が、半導体ベース領域と、半導体エミッタ領域と、前記半導体ベース領域と前記半導体エミッタ領域の間に配置されたp‐n接合領域とを含む請求項15に記載の太陽電池モジュール。
- 前記イオン性荷電膜の電気極性が、前記第1電極に接触している前記半導体ベース領域または前記半導体エミッタ領域の多数キャリアの極性と反対である請求項16に記載の太陽電池モジュール。
- 前記イオン性荷電膜が、無機荷電薄膜または有機荷電薄膜を含む請求項15に記載の太陽電池モジュール。
- 前記イオン性荷電膜が、単一層または多重層を含む請求項15に記載の太陽電池モジュール。
- 前記イオン性荷電膜が、10-3〜10-6S/cmのイオン導電率を有する請求項15に記載の太陽電池モジュール。
- 前記イオン性荷電膜が、前記第1電極と前記第2電極の両方の前記最外側面に配置された請求項15に記載の太陽電池モジュール。
- 前記封止剤が、前記第1電極と前記第2電極の両方の前記最外側面に配置された前記イオン性荷電膜の上に付着した請求項21に記載の太陽電池モジュール。
- 前記太陽電池が、結晶シリコン太陽電池、アモルファスシリコン薄膜太陽電池、アモルファス微結晶シリコン薄膜太陽電池、CIGSまたはテルル化カドミウム(CdTe)太陽電池を含む請求項15に記載の太陽電池モジュール。
- 最外側面および内表面を含む第1電極と、
それぞれが最外側面および内表面を含む複数の金属グリッド電極と、
前記第1電極の前記内表面と前記複数の金属グリッド電極の前記内表面の間に配置された光電変換層と、
前記第1電極の前記最外側面に配置されたイオン性荷電膜と
を少なくとも含む複数の太陽電池。 - 前記光電変換層の上および前記金属グリッド電極のそばに配置された反射防止層をさらに含む請求項24に記載の太陽電池。
- 前記第1電極が、裏面電極である請求項24に記載の太陽電池。
- 前記光電変換層が、半導体ベース領域と、半導体エミッタ領域と、前記半導体ベース領域と前記半導体エミッタ領域の間に配置されたp‐n接合領域とを含む請求項24に記載の太陽電池。
- 前記イオン性荷電膜の電気極性が、前記第1電極に接触している前記半導体ベース領域の多数キャリアの極性と反対である請求項27に記載の太陽電池。
- 前記イオン性荷電膜が、無機荷電薄膜または有機荷電薄膜を含む請求項24に記載の太陽電池。
- 前記イオン性荷電膜が、単一層または多重層を含む請求項24に記載の太陽電池。
- 前記イオン性荷電膜が、10-3〜10-6S/cmのイオン導電率を有する請求項24に記載の太陽電池。
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